Page 394 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

FQA17P10
Fairchild/ON Semiconductor

MOSFET P-CH 100V 18A TO-3P

Package: TO-3P-3, SC-65-3

Stock8,412
HUF76407D3
Fairchild/ON Semiconductor

MOSFET N-CH 60V 12A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,152
IRFH7107TRPBF
Infineon Technologies

MOSFET N-CH 75V 14A 8PQFN

Package: 8-PowerTDFN

Stock6,880
TK9A55DA(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 550V 8.5A TO-220SIS

Package: TO-220-3 Full Pack

Stock2,448
TSM126CX RFG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-236-3, SC-59, SOT-23-3

Stock2,416
STS7PF30L
STMicroelectronics

MOSFET P-CH 30V 7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock66,696
STY60NM50
STMicroelectronics

MOSFET N-CH 500V 60A MAX247

Package: TO-247-3

Stock14,532
FDPF5N50UT
Fairchild/ON Semiconductor

MOSFET N-CH 500V TO-220F-3

Package: TO-220-3 Full Pack

Stock41,700
STP5NK60ZFP
STMicroelectronics

MOSFET N-CH 600V 5A TO-220FP

Package: TO-220-3 Full Pack

Stock599,868
BUK9606-75B,118
Nexperia USA Inc.

MOSFET N-CH 75V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,792
PMV213SN,215
Nexperia USA Inc.

MOSFET N-CH 100V 1.9A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock115,800
FDBL0150N80
Fairchild/ON Semiconductor

MOSFET N-CH 80V 300A

Package: 8-PowerSFN

Stock6,672
IRFPS43N50KPBF
Vishay Siliconix

MOSFET N-CH 500V 47A SUPER247

Package: TO-274AA

Stock8,676
BSS138BK-TP
Micro Commercial Co

N-CHANNEL MOSFET,SOT-23

Package: -

Stock3,732
GSFD8003
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 3.00A, 800

Package: -

Stock14,907
PMZB950UPEL315
NXP Semiconductors

NEXPERIA PMZB950UPEL - 20 V, P-C

Package: -

Request a Quote
R6024ENZC17
Rohm Semiconductor

MOSFET N-CH 600V 24A TO3PF

Package: -

Stock900
TSM130NB06LCR
Taiwan Semiconductor Corporation

MOSFET N-CH 60V 10A/51A 8PDFN

Package: -

Request a Quote
TSM2328CX
Taiwan Semiconductor Corporation

100V, 1.5A, SINGLE N-CHANNEL POW

Package: -

Request a Quote
RSS100N03TB1
Rohm Semiconductor

MOSFET N-CH 30V 10A 8SOP

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FQA17P10	Fairchild/ON Semiconductor	MOSFET P-CH 100V 18A TO-3P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock8,412	MOSFET (Metal Oxide)	100V	18A (Tc)	10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	±30V	-	120W (Tc)	190 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
HUF76407D3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 92 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,152	MOSFET (Metal Oxide)	60V	12A (Tc)	4.5V, 10V	3V @ 250µA	11.3nC @ 10V	350pF @ 25V	±16V	-	38W (Tc)	92 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IRFH7107TRPBF	Infineon Technologies	MOSFET N-CH 75V 14A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,880	MOSFET (Metal Oxide)	75V	14A (Ta), 75A (Tc)	10V	4V @ 100µA	72nC @ 10V	3110pF @ 25V	±20V	-	3.6W (Ta), 104W (Tc)	8.5 mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
TK9A55DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 8.5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 860 mOhm @ 4.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,448	MOSFET (Metal Oxide)	550V	8.5A (Ta)	10V	4V @ 1mA	20nC @ 10V	1050pF @ 25V	±30V	-	40W (Tc)	860 mOhm @ 4.3A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TSM126CX RFG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 1.18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 51.42pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 800 Ohm @ 16mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,416	MOSFET (Metal Oxide)	600V	30mA (Tc)	0V, 10V	1V @ 8µA	1.18nC @ 4.5V	51.42pF @ 25V	±20V	-	500mW (Ta)	800 Ohm @ 16mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
STS7PF30L	STMicroelectronics	MOSFET P-CH 30V 7A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock66,696	MOSFET (Metal Oxide)	30V	7A (Tc)	4.5V, 10V	2.5V @ 250µA	38nC @ 4.5V	2600pF @ 25V	±20V	-	2.5W (Tc)	21 mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STY60NM50	STMicroelectronics	MOSFET N-CH 500V 60A MAX247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 266nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: MAX247? Package / Case: TO-247-3	Package: TO-247-3	Stock14,532	MOSFET (Metal Oxide)	500V	60A (Tc)	10V	5V @ 250µA	266nC @ 10V	7500pF @ 25V	±30V	-	560W (Tc)	50 mOhm @ 30A, 10V	150°C (TJ)	Through Hole	MAX247?	TO-247-3
FDPF5N50UT	Fairchild/ON Semiconductor	MOSFET N-CH 500V TO-220F-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock41,700	MOSFET (Metal Oxide)	500V	4A (Tc)	10V	5V @ 250µA	15nC @ 10V	650pF @ 25V	±30V	-	28W (Tc)	2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
STP5NK60ZFP	STMicroelectronics	MOSFET N-CH 600V 5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock599,868	MOSFET (Metal Oxide)	600V	5A (Tc)	10V	4.5V @ 50µA	34nC @ 10V	690pF @ 25V	±30V	-	25W (Tc)	1.6 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
BUK9606-75B,118	Nexperia USA Inc.	MOSFET N-CH 75V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 11693pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,792	MOSFET (Metal Oxide)	75V	75A (Tc)	5V, 10V	2V @ 1mA	95nC @ 5V	11693pF @ 25V	±15V	-	300W (Tc)	5.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PMV213SN,215	Nexperia USA Inc.	MOSFET N-CH 100V 1.9A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 20V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 280mW (Tj) Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock115,800	MOSFET (Metal Oxide)	100V	1.9A (Tc)	10V	4V @ 1mA	7nC @ 10V	330pF @ 20V	±30V	-	280mW (Tj)	250 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
FDBL0150N80	Fairchild/ON Semiconductor	MOSFET N-CH 80V 300A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 188nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 429W (Tj) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock6,672	MOSFET (Metal Oxide)	80V	300A (Tc)	10V	4V @ 250µA	188nC @ 10V	12800pF @ 25V	±20V	-	429W (Tj)	1.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PSOF	8-PowerSFN
IRFPS43N50KPBF	Vishay Siliconix	MOSFET N-CH 500V 47A SUPER247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8310pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-247 (TO-274AA) Package / Case: TO-274AA	Package: TO-274AA	Stock8,676	MOSFET (Metal Oxide)	500V	47A (Tc)	10V	5V @ 250µA	350nC @ 10V	8310pF @ 25V	±30V	-	540W (Tc)	90 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Through Hole	SUPER-247 (TO-274AA)	TO-274AA
BSS138BK-TP	Micro Commercial Co	N-CHANNEL MOSFET,SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 590mA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock3,732	MOSFET (Metal Oxide)	50 V	590mA	2.5V, 10V	1.5V @ 250µA	1.4 nC @ 10 V	58 pF @ 30 V	±20V	-	830mW	1.5Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
GSFD8003	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 3.00A, 800 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390.5 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock14,907	MOSFET (Metal Oxide)	800 V	3A (Tc)	10V	4V @ 250µA	9 nC @ 10 V	390.5 pF @ 25 V	±30V	-	80W (Tc)	4.8Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
PMZB950UPEL315	NXP Semiconductors	NEXPERIA PMZB950UPEL - 20 V, P-C FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6024ENZC17	Rohm Semiconductor	MOSFET N-CH 600V 24A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Stock900	MOSFET (Metal Oxide)	600 V	24A (Tc)	10V	4V @ 1mA	70 nC @ 10 V	1650 pF @ 25 V	±20V	-	120W (Tc)	165mOhm @ 11.3A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
TSM130NB06LCR	Taiwan Semiconductor Corporation	MOSFET N-CH 60V 10A/51A 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5.2x5.75) Package / Case: 8-PowerLDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	10A (Ta), 51A (Tc)	4.5V, 10V	2.5V @ 250µA	37 nC @ 10 V	2175 pF @ 30 V	±20V	-	3.1W (Ta), 83W (Tc)	13mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PDFN (5.2x5.75)	8-PowerLDFN
TSM2328CX	Taiwan Semiconductor Corporation	100V, 1.5A, SINGLE N-CHANNEL POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.38W (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	1.5A (Ta)	10V	2.5V @ 250µA	11.1 nC @ 5 V	975 pF @ 25 V	±20V	-	1.38W (Ta)	250mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
RSS100N03TB1	Rohm Semiconductor	MOSFET N-CH 30V 10A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A (Ta)	4V, 10V	2.5V @ 1mA	20 nC @ 5 V	1070 pF @ 10 V	20V	-	2W (Ta)	13.3mOhm @ 10A, 10V	150°C	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
IPB60R099C6ATMA1	Infineon Technologies	MOSFET N-CH 600V 37.9A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.21mA Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock8,505	MOSFET (Metal Oxide)	600 V	37.9A (Tc)	10V	3.5V @ 1.21mA	119 nC @ 10 V	2660 pF @ 100 V	±20V	-	278W (Tc)	99mOhm @ 18.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NTB011N15MC	onsemi	NTB011N15MC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 75.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.5V @ 223µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 136.4W (Tc) Rds On (Max) @ Id, Vgs: 10.9mOhm @ 41A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock1,656	MOSFET (Metal Oxide)	150 V	12.5A (Ta), 75.4A (Tc)	8V, 10V	4.5V @ 223µA	37 nC @ 10 V	2810 pF @ 75 V	±20V	-	3.75W (Ta), 136.4W (Tc)	10.9mOhm @ 41A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AUIRF1010ZSTRL	Infineon Technologies	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	75A (Tc)	-	4V @ 250µA	95 nC @ 10 V	2840 pF @ 25 V	-	-	140W (Tc)	7.5mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFR220TRPBF-BE3	Vishay Siliconix	N-CHANNEL 200V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	4.8A (Tc)	10V	4V @ 250µA	14 nC @ 10 V	260 pF @ 25 V	±20V	-	2.5W (Ta), 42W (Tc)	800mOhm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
RJK4007DPP-00-T2	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMT3003LFGQ-13	Diodes Incorporated	MOSFET N-CH 30V 22A PWRDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 62W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	22A (Ta), 100A (Tc)	4.5V, 10V	3V @ 250µA	44 nC @ 10 V	2370 pF @ 15 V	±20V	-	2.4W (Ta), 62W (Tc)	3.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
PJA3449_R1_00001	Panjit International Inc.	SOT-23, MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 299 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock26,280	MOSFET (Metal Oxide)	40 V	2.2A (Ta)	4.5V, 10V	2.1V @ 250µA	7.3 nC @ 10 V	299 pF @ 20 V	±20V	-	1.25W (Ta)	160mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IXFN140N60X3	IXYS	DISCRETE MOSFET 140A 600V X3 SOT FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-