Page 392 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPA50R800CE
Infineon Technologies

MOSFET N-CH 500V 5A PG-TO220 FPK

Package: TO-220-3 Full Pack

Stock117,240
SI4420DYPBF
Infineon Technologies

MOSFET N-CH 30V 12.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock38,724
JANTXV2N7236U
Microsemi Corporation

MOSFET P-CH 100V 18A

Package: TO-267AB

Stock5,664
SFT1423-E
ON Semiconductor

MOSFET N-CH 500V 2A TP

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,168
NTTFS5826NLTWG
ON Semiconductor

MOSFET N-CH 60V 8A 8-WDFN

Package: 8-PowerWDFN

Stock2,896
SUM27N20-78-E3
Vishay Siliconix

MOSFET N-CH 200V 27A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock120,012
SI5858DU-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 6A PPAK CHIPFET

Package: PowerPAK? ChipFET? Dual

Stock4,720
STSJ100NH3LL
STMicroelectronics

MOSFET N-CH 30V 25A PWR8SOIC

Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Stock106,056
STN2NE10
STMicroelectronics

MOSFET N-CH 100V 2A SOT-223

Package: TO-261-4, TO-261AA

Stock276,780
TK20N60W,S1VF
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO-247

Package: TO-247-3

Stock3,344
AON6484
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 3.3A DFN5X6

Package: 8-PowerSMD, Flat Leads

Stock144,000
DMP3098LDM-7
Diodes Incorporated

MOSFET P-CH 30V 4A SOT-26

Package: SOT-23-6

Stock72,240
RSF010P05TL
Rohm Semiconductor

MOSFET P-CH 45V 1A TUMT3

Package: 3-SMD, Flat Leads

Stock36,000
DMN2230UQ-13
Diodes Incorporated

MOSFET NCH 20V 2A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock4,208
CSD18543Q3AT
Texas Instruments

60V N-CHANNEL NEXFET POWER MOSF

Package: 8-PowerVDFN

Stock7,600
AOT7S65L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 7A TO220

Package: TO-220-3

Stock15,684
STB13N60M2
STMicroelectronics

MOSFET N-CH 600V 11A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,624
SIHB24N65E-GE3
Vishay Siliconix

MOSFET N-CH 650V 24A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock20,196
FDPF20N50T
Fairchild/ON Semiconductor

MOSFET N-CH 500V 20A TO-220F

Package: TO-220-3 Full Pack

Stock90,792
STD9NM60N
STMicroelectronics

MOSFET N-CH 600V 6.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock926,412

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPA50R800CE	Infineon Technologies	MOSFET N-CH 500V 5A PG-TO220 FPK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 26.4W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.5A, 13V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock117,240	MOSFET (Metal Oxide)	500V	5A (Tc)	13V	3.5V @ 130µA	12.4nC @ 10V	280pF @ 100V	±20V	Super Junction	26.4W (Tc)	800 mOhm @ 1.5A, 13V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
SI4420DYPBF	Infineon Technologies	MOSFET N-CH 30V 12.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock38,724	MOSFET (Metal Oxide)	30V	12.5A (Ta)	4.5V, 10V	1V @ 250µA	78nC @ 10V	2240pF @ 15V	±20V	-	2.5W (Ta)	9 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
JANTXV2N7236U	Microsemi Corporation	MOSFET P-CH 100V 18A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	Package: TO-267AB	Stock5,664	MOSFET (Metal Oxide)	100V	18A (Tc)	10V	4V @ 250µA	60nC @ 10V	-	±20V	-	4W (Ta), 125W (Tc)	220 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-267AB	TO-267AB
SFT1423-E	ON Semiconductor	MOSFET N-CH 500V 2A TP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 4.9 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TP Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,168	MOSFET (Metal Oxide)	500V	2A (Ta)	4V, 10V	-	8.7nC @ 10V	175pF @ 30V	±20V	-	1W (Ta), 20W (Tc)	4.9 Ohm @ 1A, 10V	150°C (TJ)	Through Hole	TP	TO-251-3 Short Leads, IPak, TO-251AA
NTTFS5826NLTWG	ON Semiconductor	MOSFET N-CH 60V 8A 8-WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,896	MOSFET (Metal Oxide)	60V	8A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	850pF @ 25V	±20V	-	3.1W (Ta), 19W (Tc)	24 mOhm @ 7.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
SUM27N20-78-E3	Vishay Siliconix	MOSFET N-CH 200V 27A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock120,012	MOSFET (Metal Oxide)	200V	27A (Tc)	6V, 10V	4V @ 250µA	60nC @ 10V	2150pF @ 25V	±20V	-	3.75W (Ta), 150W (Tc)	78 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI5858DU-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 6A PPAK CHIPFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.3W (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? ChipFet Dual Package / Case: PowerPAK? ChipFET? Dual	Package: PowerPAK? ChipFET? Dual	Stock4,720	MOSFET (Metal Oxide)	20V	6A (Tc)	1.8V, 4.5V	1V @ 250µA	16nC @ 8V	520pF @ 10V	±8V	Schottky Diode (Isolated)	2.3W (Ta), 8.3W (Tc)	39 mOhm @ 4.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFet Dual	PowerPAK? ChipFET? Dual
STSJ100NH3LL	STMicroelectronics	MOSFET N-CH 30V 25A PWR8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3W (Ta), 70W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC-EP Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock106,056	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	1V @ 250µA	40nC @ 4.5V	4450pF @ 25V	±16V	-	3W (Ta), 70W (Tc)	3.5 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	8-SOIC-EP	8-SOIC (0.154", 3.90mm Width) Exposed Pad
STN2NE10	STMicroelectronics	MOSFET N-CH 100V 2A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock276,780	MOSFET (Metal Oxide)	100V	2A (Tc)	10V	4V @ 250µA	19nC @ 10V	305pF @ 25V	±20V	-	2.5W (Tc)	400 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
TK20N60W,S1VF	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,344	MOSFET (Metal Oxide)	600V	20A (Ta)	10V	3.7V @ 1mA	48nC @ 10V	1680pF @ 300V	±30V	-	165W (Tc)	155 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
AON6484	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 3.3A DFN5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 942pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 79 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock144,000	MOSFET (Metal Oxide)	100V	3.3A (Ta), 12A (Tc)	4.5V, 10V	2.7V @ 250µA	24nC @ 10V	942pF @ 50V	±20V	-	2W (Ta), 25W (Tc)	79 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
DMP3098LDM-7	Diodes Incorporated	MOSFET P-CH 30V 4A SOT-26 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	Package: SOT-23-6	Stock72,240	MOSFET (Metal Oxide)	30V	4A (Ta)	4.5V, 10V	2.1V @ 250µA	7.8nC @ 10V	336pF @ 25V	±20V	-	1.25W (Ta)	65 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-26	SOT-23-6
RSF010P05TL	Rohm Semiconductor	MOSFET P-CH 45V 1A TUMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 460 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock36,000	MOSFET (Metal Oxide)	45V	1A (Ta)	4V, 10V	2.5V @ 1mA	2.3nC @ 5V	160pF @ 10V	±20V	-	800mW (Ta)	460 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	TUMT3	3-SMD, Flat Leads
DMN2230UQ-13	Diodes Incorporated	MOSFET NCH 20V 2A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,208	MOSFET (Metal Oxide)	20V	2A (Ta)	1.8V, 4.5V	1V @ 250µA	2.3nC @ 10V	188pF @ 10V	±12V	-	600mW (Ta)	110 mOhm @ 2.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
CSD18543Q3AT	Texas Instruments	60V N-CHANNEL NEXFET POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 15.6 mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,600	MOSFET (Metal Oxide)	60V	12A (Ta), 60A (Tc)	4.5V, 10V	2.7V @ 250µA	14.5nC @ 10V	1150pF @ 30V	±20V	-	66W (Tc)	15.6 mOhm @ 12A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (3.3x3.3)	8-PowerVDFN
AOT7S65L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 434pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock15,684	MOSFET (Metal Oxide)	650V	7A (Tc)	10V	4V @ 250µA	9.2nC @ 10V	434pF @ 100V	±30V	-	104W (Tc)	650 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STB13N60M2	STMicroelectronics	MOSFET N-CH 600V 11A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,624	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	17nC @ 10V	580pF @ 100V	±25V	-	110W (Tc)	380 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHB24N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 24A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock20,196	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 250µA	122nC @ 10V	2740pF @ 100V	±30V	-	250W (Tc)	145 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDPF20N50T	Fairchild/ON Semiconductor	MOSFET N-CH 500V 20A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38.5W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock90,792	MOSFET (Metal Oxide)	500V	20A (Tc)	10V	5V @ 250µA	59.5nC @ 10V	3120pF @ 25V	±30V	-	38.5W (Tc)	230 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
STD9NM60N	STMicroelectronics	MOSFET N-CH 600V 6.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 452pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 745 mOhm @ 3.25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock926,412	MOSFET (Metal Oxide)	600V	6.5A (Tc)	10V	4V @ 250µA	17.4nC @ 10V	452pF @ 50V	±25V	-	70W (Tc)	745 mOhm @ 3.25A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BSC059N04LS6ATMA1	Infineon Technologies	MOSFET N-CH 40V 17A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 49A (Tc), 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	Package: -	Stock151,521	MOSFET (Metal Oxide)	40 V	17A (Ta), 49A (Tc), 59A (Tc)	4.5V, 10V	2.3V @ 250µA	9.4 nC @ 10 V	830 pF @ 20 V	±20V	-	3W (Ta), 38W (Tc)	5.9mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
FDS6690A-NBNP006	onsemi	SINGLE N-CHANNEL, LOGIC LEVEL, P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	11A (Ta)	4.5V, 10V	3V @ 250µA	16 nC @ 5 V	1205 pF @ 15 V	±20V	-	1W (Ta)	12.5mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
RSS100N03HZGTB	Rohm Semiconductor	NCH 30V 10A AUTOMOTIVE POWER MOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock2,910	MOSFET (Metal Oxide)	30 V	10A (Ta)	4V, 10V	2.5V @ 1mA	20 nC @ 5 V	1070 pF @ 10 V	±20V	-	2W (Ta)	13.3mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
2SK4097LS	onsemi	MOSFET N-CH 500V 8.3A TO220FI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 30 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 2W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	8.3A (Tc)	-	-	30 nC @ 10 V	750 pF @ 30 V	-	-	2W (Ta), 35W (Tc)	650mOhm @ 5A, 10V	150°C (TJ)	Through Hole	TO-220FI(LS)	TO-220-3 Full Pack
BSZ440N10NS3GATMA1	Infineon Technologies	MOSFET N-CH 100V 5.3A/18A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2.7V @ 12µA Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: -	Stock71,781	MOSFET (Metal Oxide)	100 V	5.3A (Ta), 18A (Tc)	6V, 10V	2.7V @ 12µA	9.1 nC @ 10 V	640 pF @ 50 V	±20V	-	29W (Tc)	44mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
RQ6E040XNTCR	Rohm Semiconductor	MOSFET N-CH 30V 4A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock8,700	MOSFET (Metal Oxide)	30 V	4A (Ta)	4V, 10V	2.5V @ 1mA	3.3 nC @ 5 V	180 pF @ 10 V	±20V	-	950mW (Ta)	50mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
AOSP66923	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 12A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock30,663	MOSFET (Metal Oxide)	100 V	12A (Ta)	4.5V, 10V	2.6V @ 250µA	35 nC @ 10 V	1725 pF @ 50 V	±20V	-	3.1W (Ta)	11mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
DI010N03PW-AQ	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-QFN (2x2) Package / Case: 6-PowerUDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A (Tc)	4.5V, 10V	2V @ 250µA	25 nC @ 10 V	1120 pF @ 15 V	±20V	-	1.4W (Tc)	12mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-QFN (2x2)	6-PowerUDFN