Page 399 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

RJL5014DPK-00#T0
Renesas Electronics America

MOSFET N-CH 500V 19A TO3P

Package: TO-3P-3, SC-65-3

Stock6,368
FQH70N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 70A TO-247

Package: TO-247-3

Stock6,976
FQPF13N50C
Fairchild/ON Semiconductor

MOSFET N-CH 500V 13A TO-220F

Package: TO-220-3 Full Pack

Stock53,220
IRFB17N60K
Vishay Siliconix

MOSFET N-CH 600V 17A TO-220AB

Package: TO-220-3

Stock544,260
STB300NH02L
STMicroelectronics

MOSFET N-CH 24V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,664
IPB100N06S2L05ATMA2
Infineon Technologies

MOSFET N-CH 55V 100A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,704
IPA80R460CEXKSA2
Infineon Technologies

MOSFET N-CH 800V TO-220-3

Package: TO-220-3 Full Pack

Stock4,512
AOTF7T60PL
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 7A TO-220F

Package: TO-220-3 Full Pack

Stock15,876
IRF614SPBF
Vishay Siliconix

MOSFET N-CH 250V 2.7A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,420
VN3205N3-G
Microchip Technology

MOSFET N-CH 50V 1.2A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock8,436
PSMN130-200D,118
Nexperia USA Inc.

MOSFET N-CH 200V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,560
FDMC86244
Fairchild/ON Semiconductor

MOSFET N-CH 150V 2.8A POWER33

Package: 8-PowerWDFN

Stock12,960
IPS70R950CEAKMA1
Infineon Technologies

MOSFET NCH 700V 7.4A TO251

Package: TO-251-3 Stub Leads, IPak

Stock14,976
BSZ025N04LSATMA1
Infineon Technologies

MOSFET N-CH 40V 22A TSDSON-8

Package: 8-PowerTDFN

Stock42,426
IRF2804PBF
Infineon Technologies

MOSFET N-CH 40V 75A TO-220AB

Package: TO-220-3

Stock9,696
EPC2029
EPC

TRANS GAN 80V 31A BUMPED DIE

Package: Die

Stock32,184
FDD5N53TM
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
DMTH43M8LK3Q-13
Diodes Incorporated

MOSFET N-CHANNEL 40V 100A TO252

Package: -

Stock20,364
NVMYS008N08LHTWG
onsemi

T8 80V LL LFPAK

Package: -

Request a Quote
CSD18511KTT
Texas Instruments

MOSFET N-CH 40V 194A DDPAK

Package: -

Stock1,035

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RJL5014DPK-00#T0	Renesas Electronics America	MOSFET N-CH 500V 19A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock6,368	MOSFET (Metal Oxide)	500V	19A (Ta)	10V	-	43nC @ 10V	1700pF @ 25V	±30V	-	150W (Tc)	400 mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
FQH70N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 70A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,976	MOSFET (Metal Oxide)	100V	70A (Tc)	10V	4V @ 250µA	110nC @ 10V	3300pF @ 25V	±25V	-	214W (Tc)	23 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
FQPF13N50C	Fairchild/ON Semiconductor	MOSFET N-CH 500V 13A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock53,220	MOSFET (Metal Oxide)	500V	13A (Tc)	10V	4V @ 250µA	56nC @ 10V	2055pF @ 25V	±30V	-	48W (Tc)	480 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRFB17N60K	Vishay Siliconix	MOSFET N-CH 600V 17A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 340W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock544,260	MOSFET (Metal Oxide)	600V	17A (Tc)	10V	5V @ 250µA	99nC @ 10V	2700pF @ 25V	±30V	-	340W (Tc)	420 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STB300NH02L	STMicroelectronics	MOSFET N-CH 24V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7055pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,664	MOSFET (Metal Oxide)	24V	120A (Tc)	10V	2V @ 250µA	109.4nC @ 10V	7055pF @ 15V	±20V	-	300W (Tc)	1.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB100N06S2L05ATMA2	Infineon Technologies	MOSFET N-CH 55V 100A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,704	MOSFET (Metal Oxide)	55V	100A (Tc)	4.5V, 10V	2V @ 250µA	230nC @ 10V	5660pF @ 25V	±20V	-	300W (Tc)	4.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPA80R460CEXKSA2	Infineon Technologies	MOSFET N-CH 800V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 680µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 460 mOhm @ 7.1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,512	MOSFET (Metal Oxide)	800V	10.8A (Ta)	10V	3.9V @ 680µA	64nC @ 10V	1600pF @ 100V	±20V	-	34W (Tc)	460 mOhm @ 7.1A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
AOTF7T60PL	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 7A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 965pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock15,876	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	5V @ 250µA	25nC @ 10V	965pF @ 100V	±30V	-	29W (Tc)	1.1 Ohm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
IRF614SPBF	Vishay Siliconix	MOSFET N-CH 250V 2.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,420	MOSFET (Metal Oxide)	250V	2.7A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	3.1W (Ta), 36W (Tc)	2 Ohm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
VN3205N3-G	Microchip Technology	MOSFET N-CH 50V 1.2A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock8,436	MOSFET (Metal Oxide)	50V	1.2A (Tj)	4.5V, 10V	2.4V @ 10mA	-	300pF @ 25V	±20V	-	1W (Tc)	300 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
PSMN130-200D,118	Nexperia USA Inc.	MOSFET N-CH 200V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2470pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,560	MOSFET (Metal Oxide)	200V	20A (Tc)	10V	4V @ 1mA	65nC @ 10V	2470pF @ 25V	±20V	-	150W (Tc)	130 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMC86244	Fairchild/ON Semiconductor	MOSFET N-CH 150V 2.8A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 134 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock12,960	MOSFET (Metal Oxide)	150V	2.8A (Ta), 9.4A (Tc)	6V, 10V	4V @ 250µA	5.9nC @ 10V	345pF @ 75V	±20V	-	2.3W (Ta), 26W (Tc)	134 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
IPS70R950CEAKMA1	Infineon Technologies	MOSFET NCH 700V 7.4A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock14,976	MOSFET (Metal Oxide)	700V	7.4A (Tc)	10V	3.5V @ 150µA	15.3nC @ 10V	328pF @ 100V	±20V	Super Junction	68W (Tc)	950 mOhm @ 1.5A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251	TO-251-3 Stub Leads, IPak
BSZ025N04LSATMA1	Infineon Technologies	MOSFET N-CH 40V 22A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock42,426	MOSFET (Metal Oxide)	40V	22A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	52nC @ 10V	3680pF @ 20V	±20V	-	2.1W (Ta), 69W (Tc)	2.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
IRF2804PBF	Infineon Technologies	MOSFET N-CH 40V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock9,696	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 250µA	240nC @ 10V	6450pF @ 25V	±20V	-	300W (Tc)	2.3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
EPC2029	EPC	TRANS GAN 80V 31A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 40V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock32,184	GaNFET (Gallium Nitride)	80V	48A (Ta)	5V	2.5V @ 12mA	13nC @ 5V	1410pF @ 40V	+6V, -4V	-	-	3.2 mOhm @ 30A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
FDD5N53TM	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 530 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	530 V	4A (Tc)	10V	5V @ 250µA	15 nC @ 10 V	640 pF @ 25 V	±30V	-	40W (Tc)	1.5Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMTH43M8LK3Q-13	Diodes Incorporated	MOSFET N-CHANNEL 40V 100A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Ta) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock20,364	MOSFET (Metal Oxide)	40 V	100A (Tc)	5V, 10V	2.5V @ 250µA	38.5 nC @ 10 V	2693 pF @ 20 V	±20V	-	88W (Ta)	3.6mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
NVMYS008N08LHTWG	onsemi	T8 80V LL LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 73W (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK4 (5x6) Package / Case: SOT-1023, 4-LFPAK	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	13A (Ta), 59A (Tc)	4.5V, 10V	2V @ 70µA	25 nC @ 10 V	1420 pF @ 40 V	±20V	-	3.7W (Ta), 73W (Tc)	8.8mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK4 (5x6)	SOT-1023, 4-LFPAK
CSD18511KTT	Texas Instruments	MOSFET N-CH 40V 194A DDPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 194A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (DDPAK-3) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock1,035	MOSFET (Metal Oxide)	40 V	194A (Ta)	4.5V, 10V	2.4V @ 250µA	64 nC @ 10 V	5940 pF @ 20 V	±20V	-	188W (Ta)	2.6mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (DDPAK-3)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMN4034SSSQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V SO-8 T&R 2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	6.5A (Ta)	4.5V, 10V	3V @ 250µA	18 nC @ 10 V	920 pF @ 20 V	±20V	-	1.4W (Ta)	34mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FQU5N50CTU-WS	onsemi	MOSFET N-CH 500V 4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	4A (Tc)	10V	4V @ 250µA	24 nC @ 10 V	625 pF @ 25 V	±30V	-	2.5W (Ta), 48W (Tc)	1.4Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
AOTF2142L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 112A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 112A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	112A (Tc)	4.5V, 10V	2.3V @ 250µA	100 nC @ 10 V	8320 pF @ 20 V	±20V	-	41W (Tc)	1.9mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
SCTWA60N120G2-4	STMicroelectronics	SILICON CARBIDE POWER MOSFET 120 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 388W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 18V Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock1,014	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	18V	5V @ 1mA	94 nC @ 18 V	1969 pF @ 800 V	+22V, -10V	-	388W (Tc)	52mOhm @ 30A, 18V	-55°C ~ 200°C (TJ)	Through Hole	TO-247-4	TO-247-4
SIA430DJ-T4-GE3	Vishay Siliconix	MOSFET N-CH 20V 12A/12A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Package / Case: PowerPAK® SC-70-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	12A (Ta), 12A (Tc)	4.5V, 10V	3V @ 250µA	18 nC @ 10 V	800 pF @ 10 V	±20V	-	3.5W (Ta), 19.2W (Tc)	13.5mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6	PowerPAK® SC-70-6
SI3456DDV-T1-BE3	Vishay Siliconix	N-CHANNEL 30-V (D-S) MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock13,191	MOSFET (Metal Oxide)	30 V	5A (Ta), 6.3A (Tc)	4.5V, 10V	3V @ 250µA	9 nC @ 10 V	325 pF @ 15 V	±20V	-	1.7W (Ta), 2.7W (Tc)	40mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
2SK3900-ZP-E1-AZ	Renesas Electronics Corporation	POWER FIELD-EFFECT TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NP88N055KUG-E2-AY	Renesas Electronics Corporation	TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	88A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-