Page 400 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFC3206EB
Infineon Technologies

MOSFET N-CH WAFER

Package: -

Stock4,032
AON1605_001
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 0.7A 3DFN

Package: 3-UFDFN

Stock7,648
APTM100DA18CT1G
Microsemi Corporation

MOSFET N-CH 1000V 40A SP1

Package: SP1

Stock6,864
SQM110P04-04L-GE3
Vishay Siliconix

MOSFET P-CH 40V 120A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock132,000
SI7425DN-T1-E3
Vishay Siliconix

MOSFET P-CH 12V 8.3A PPAK 1212-8

Package: PowerPAK? 1212-8

Stock1,436,520
APTM120DA68T1G
Microsemi Corporation

MOSFET N-CH 1200V 15A SP1

Package: SP1

Stock5,936
IRF820STRR
Vishay Siliconix

MOSFET N-CH 500V 2.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,200
IRFI734G
Vishay Siliconix

MOSFET N-CH 450V 3.4A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock8,280
IRF9640S
Vishay Siliconix

MOSFET P-CH 200V 11A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,696
RJK03M4DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 30V 35A WPAK

Package: 8-WFDFN Exposed Pad

Stock5,760
STL287N4F7AG
STMicroelectronics

MOSFET N-CH 40V PWRFLAT 8X8

Package: -

Stock6,896
IXTR170P10P
IXYS

MOSFET P-CH 100V 108A ISOPLUS247

Package: ISOPLUS247?

Stock2,944
RSR010N10TL
Rohm Semiconductor

MOSFET N-CH 100V 1.0A TSMT3

Package: SC-96

Stock73,920
STL135N8F7AG
STMicroelectronics

MOSFET N-CH 80V 130A

Package: 8-PowerVDFN

Stock5,088
TK380A60Y,S4X
Toshiba Semiconductor and Storage

MOSFET TRANSISTOR TO-220SIS PD

Package: TO-220-3 Full Pack

Stock6,792
MCM1208-TP
Micro Commercial Co

MOSFET P-CH 12V 8A DFN202

Package: 6-WDFN Exposed Pad

Stock6,320
IRFR120NTRPBF
Infineon Technologies

MOSFET N-CH 100V 9.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock764,880
NTMFS0D5N04XMT1G
onsemi

40V T10M IN S08FL HEFET GEN 2 PA

Package: -

Request a Quote
IPDQ65R040CFD7XTMA1
Infineon Technologies

HIGH POWER_NEW

Package: -

Request a Quote
IPTC063N15NM5ATMA1
Infineon Technologies

OPTIMOS 5 POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFC3206EB	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,032	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AON1605_001	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 0.7A 3DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 750nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 710 mOhm @ 400mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN (1.0 x 0.60) Package / Case: 3-UFDFN	Package: 3-UFDFN	Stock7,648	MOSFET (Metal Oxide)	20V	700mA (Ta)	1.5V, 4.5V	1.1V @ 250µA	750nC @ 4.5V	50pF @ 10V	±8V	-	900mW (Ta)	710 mOhm @ 400mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	3-DFN (1.0 x 0.60)	3-UFDFN
APTM100DA18CT1G	Microsemi Corporation	MOSFET N-CH 1000V 40A SP1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 40A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 657W (Tc) Rds On (Max) @ Id, Vgs: 216 mOhm @ 33A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	Package: SP1	Stock6,864	MOSFET (Metal Oxide)	1000V	40A	10V	5V @ 2.5mA	570nC @ 10V	14800pF @ 25V	±30V	-	657W (Tc)	216 mOhm @ 33A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
SQM110P04-04L-GE3	Vishay Siliconix	MOSFET P-CH 40V 120A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13980pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock132,000	MOSFET (Metal Oxide)	40V	120A (Tc)	4.5V, 10V	2.5V @ 250µA	330nC @ 10V	13980pF @ 20V	±20V	-	375W (Tc)	4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI7425DN-T1-E3	Vishay Siliconix	MOSFET P-CH 12V 8.3A PPAK 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock1,436,520	MOSFET (Metal Oxide)	12V	8.3A (Ta)	1.8V, 4.5V	1V @ 300µA	39nC @ 4.5V	-	±8V	-	1.5W (Ta)	16 mOhm @ 12.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
APTM120DA68T1G	Microsemi Corporation	MOSFET N-CH 1200V 15A SP1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 15A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 816 mOhm @ 12A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	Package: SP1	Stock5,936	MOSFET (Metal Oxide)	1200V	15A	10V	5V @ 2.5mA	260nC @ 10V	6696pF @ 25V	±30V	-	357W (Tc)	816 mOhm @ 12A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
IRF820STRR	Vishay Siliconix	MOSFET N-CH 500V 2.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,200	MOSFET (Metal Oxide)	500V	2.5A (Tc)	10V	4V @ 250µA	24nC @ 10V	360pF @ 25V	±20V	-	3.1W (Ta), 50W (Tc)	3 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFI734G	Vishay Siliconix	MOSFET N-CH 450V 3.4A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock8,280	MOSFET (Metal Oxide)	450V	3.4A (Tc)	10V	4V @ 250µA	45nC @ 10V	680pF @ 25V	±20V	-	35W (Tc)	1.2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRF9640S	Vishay Siliconix	MOSFET P-CH 200V 11A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,696	MOSFET (Metal Oxide)	200V	11A (Tc)	10V	4V @ 250µA	44nC @ 10V	1200pF @ 25V	±20V	-	3W (Ta), 125W (Tc)	500 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RJK03M4DPA-00#J5A	Renesas Electronics America	MOSFET N-CH 30V 35A WPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 17.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-WFDFN Exposed Pad	Package: 8-WFDFN Exposed Pad	Stock5,760	MOSFET (Metal Oxide)	30V	35A (Ta)	4.5V, 10V	-	12nC @ 4.5V	2170pF @ 10V	±20V	-	30W (Tc)	4.6 mOhm @ 17.5A, 10V	150°C (TJ)	Surface Mount	8-WPAK	8-WFDFN Exposed Pad
STL287N4F7AG	STMicroelectronics	MOSFET N-CH 40V PWRFLAT 8X8 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,896	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTR170P10P	IXYS	MOSFET P-CH 100V 108A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock2,944	MOSFET (Metal Oxide)	100V	108A (Tc)	10V	4V @ 1mA	240nC @ 10V	12600pF @ 25V	±20V	-	312W (Tc)	13 mOhm @ 85A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
RSR010N10TL	Rohm Semiconductor	MOSFET N-CH 100V 1.0A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 520 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock73,920	MOSFET (Metal Oxide)	100V	1A (Ta)	4V, 10V	2.5V @ 1mA	3.5nC @ 5V	140pF @ 25V	±20V	-	540mW (Ta)	520 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
STL135N8F7AG	STMicroelectronics	MOSFET N-CH 80V 130A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 135W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,088	MOSFET (Metal Oxide)	80V	130A (Tc)	10V	4.5V @ 250µA	103nC @ 10V	6800pF @ 40V	±20V	-	4.8W (Ta), 135W (Tc)	3.6 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
TK380A60Y,S4X	Toshiba Semiconductor and Storage	MOSFET TRANSISTOR TO-220SIS PD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 360µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,792	MOSFET (Metal Oxide)	600V	9.7A (Tc)	10V	4V @ 360µA	20nC @ 10V	590pF @ 300V	±30V	-	30W	380 mOhm @ 4.9A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
MCM1208-TP	Micro Commercial Co	MOSFET P-CH 12V 8A DFN202 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1275pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020-6J Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock6,320	MOSFET (Metal Oxide)	12V	8A (Ta)	1.5V, 4.5V	1V @ 250µA	21nC @ 4.5V	1275pF @ 6V	±8V	-	-	28 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020-6J	6-WDFN Exposed Pad
IRFR120NTRPBF	Infineon Technologies	MOSFET N-CH 100V 9.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock764,880	MOSFET (Metal Oxide)	100V	9.4A (Tc)	10V	4V @ 250µA	25nC @ 10V	330pF @ 25V	±20V	-	48W (Tc)	210 mOhm @ 5.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS0D5N04XMT1G	onsemi	40V T10M IN S08FL HEFET GEN 2 PA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 414A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 97.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6267 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 163W (Tc) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	414A (Tc)	10V	3.5V @ 240µA	97.5 nC @ 10 V	6267 pF @ 20 V	±20V	-	163W (Tc)	0.52mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerTDFN
IPDQ65R040CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	64A (Tc)	10V	4.5V @ 1.24mA	97 nC @ 10 V	4975 pF @ 400 V	±20V	-	357W (Tc)	40mOhm @ 24.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IPTC063N15NM5ATMA1	Infineon Technologies	OPTIMOS 5 POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 163µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-16-2 Package / Case: 16-PowerSOP Module	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	16.2A (Ta), 122A (Tc)	8V, 10V	4.6V @ 163µA	63 nC @ 10 V	4800 pF @ 75 V	±20V	-	3.8W (Ta), 214W (Tc)	6.3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HDSOP-16-2	16-PowerSOP Module
AON7230	Alpha & Omega Semiconductor Inc.	MOSFET N-CHANNEL 100V 47A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	47A (Tc)	4.5V, 10V	2.5V @ 250µA	45 nC @ 10 V	2320 pF @ 50 V	±20V	-	54W (Tc)	11.5mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3.3x3.3)	8-PowerWDFN
IAUA180N04S5N012AUMA1	Infineon Technologies	MOSFET N-CH 40V 180A HSOF-5-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.4V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6158 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-1 Package / Case: 5-PowerSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	180A (Tc)	7V, 10V	3.4V @ 70µA	100 nC @ 10 V	6158 pF @ 25 V	±20V	-	125W (Tc)	1.2mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-1	5-PowerSFN
IPA030N10N3GXKSA1	Infineon Technologies	MOSFET N-CH 100V 79A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 79A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	79A (Tc)	6V, 10V	3.5V @ 270µA	206 nC @ 10 V	14800 pF @ 50 V	±20V	-	41W (Tc)	3mOhm @ 79A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
STFU25N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 18A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 188mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	4.75V @ 250µA	29 nC @ 10 V	1090 pF @ 100 V	±25V	-	30W (Tc)	188mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
TP65H150G4LSG-TR	Transphorm	650 V 13 A GAN FET FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PQFN (8x8) Package / Case: 3-PowerTDFN	Package: -	Request a Quote	GaNFET (Gallium Nitride)	650 V	13A (Tc)	10V	4.8V @ 500µA	8 nC @ 10 V	598 pF @ 400 V	±20V	-	52W (Tc)	180mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	3-PQFN (8x8)	3-PowerTDFN
SCT3022KLGC11	Rohm Semiconductor	SICFET N-CH 1200V 95A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 427W Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: -	Stock648	SiCFET (Silicon Carbide)	1200 V	95A (Tc)	18V	5.6V @ 18.2mA	178 nC @ 10 V	2879 pF @ 800 V	+22V, -4V	-	427W	28.6mOhm @ 36A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
AONR21305C	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 8DFN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC9120NB	Infineon Technologies	MOSFET 100V 6.6A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6.6A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 480mOhm @ 6.6A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	6.6A	10V	-	-	-	-	-	-	480mOhm @ 6.6A, 10V	-	Surface Mount	Die	Die