Page 406 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFH7187TRPBF
Infineon Technologies

MOSFET N-CH 100V 18A

Package: 8-PowerVDFN

Stock7,600
IRF7467
Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,544
NP74N04YUG-E1-AY
Renesas Electronics America

MOSFET N-CH 40V 75A 8HSON

Package: 8-SMD, Flat Lead Exposed Pad

Stock5,552
IXTQ152N085T
IXYS

MOSFET N-CH 85V 152A TO-3P

Package: TO-3P-3, SC-65-3

Stock5,104
FKI10198
Sanken

MOSFET N-CH 100V 31A TO-220F

Package: TO-220-3 Full Pack

Stock6,816
CSD19538Q2
Texas Instruments

MOSFET NCH 100V 14.4A SON

Package: 6-WDFN Exposed Pad

Stock6,144
SI4100DY-T1-E3
Vishay Siliconix

MOSFET N-CH 100V 6.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,226,544
STB12NM60N
STMicroelectronics

MOSFET N-CH 600V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock8,880
IPP037N06L3GXKSA1
Infineon Technologies

MOSFET N-CH 60V 90A TO220-3

Package: TO-220-3

Stock16,560
HUF75639S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 100V 56A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock441,780
PMN30UNEX
Nexperia USA Inc.

MOSFET N-CH 20V SC-74

Package: SC-74, SOT-457

Stock24,714
DMN7022LFG-7
Diodes Incorporated

MOSFET N-CH 75V 7.8A PWDI3333-8

Package: 8-PowerWDFN

Stock20,814
CSD17313Q2Q1
Texas Instruments

MOSFET N-CH 30V 5A 6SON

Package: 6-WDFN Exposed Pad

Stock7,272
BVSS138LT1G
ON Semiconductor

MOSFET N-CH 50V 200MA SOT-23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock210,552
IXTA44P15TTRL
IXYS

MOSFET P-CH 150V 44A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,632
DMG2305UX-13
Diodes Incorporated

MOSFET P-CH 20V 4.2A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock967,788
MCU80N06A-TP
Micro Commercial Co

MOSFET N-CH 60V 80A DPAK

Package: -

Stock13,746
IPB19DP10NMATMA1
Infineon Technologies

TRENCH >=100V PG-TO263-3

Package: -

Stock5,940
NTH4L160N120SC1
onsemi

SICFET N-CH 1200V 17.3A TO247

Package: -

Stock3,363
FDWS86381-F085
onsemi

MOSFET N-CH 80V 30A POWER56

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFH7187TRPBF	Infineon Technologies	MOSFET N-CH 100V 18A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2116pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,600	MOSFET (Metal Oxide)	100V	18A (Ta), 105A (Tc)	10V	3.6V @ 150µA	50nC @ 10V	2116pF @ 50V	±20V	-	3.8W (Ta), 132W (Tc)	6 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerVDFN
IRF7467	Infineon Technologies	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,544	MOSFET (Metal Oxide)	30V	11A (Ta)	2.8V, 10V	2V @ 250µA	32nC @ 4.5V	2530pF @ 15V	±12V	-	2.5W (Ta)	12 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NP74N04YUG-E1-AY	Renesas Electronics America	MOSFET N-CH 40V 75A 8HSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 37.5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSON Package / Case: 8-SMD, Flat Lead Exposed Pad	Package: 8-SMD, Flat Lead Exposed Pad	Stock5,552	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 250µA	96nC @ 10V	5430pF @ 25V	±20V	-	1W (Ta), 120W (Tc)	5.5 mOhm @ 37.5A, 10V	175°C (TJ)	Surface Mount	8-HSON	8-SMD, Flat Lead Exposed Pad
IXTQ152N085T	IXYS	MOSFET N-CH 85V 152A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 152A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,104	MOSFET (Metal Oxide)	85V	152A (Tc)	10V	4V @ 250µA	114nC @ 10V	5500pF @ 25V	±20V	-	360W (Tc)	7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
FKI10198	Sanken	MOSFET N-CH 100V 31A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3990pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 17.8 mOhm @ 23.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,816	MOSFET (Metal Oxide)	100V	31A (Tc)	4.5V, 10V	2.5V @ 1mA	55.8nC @ 10V	3990pF @ 25V	±20V	-	40W (Tc)	17.8 mOhm @ 23.4A, 10V	150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
CSD19538Q2	Texas Instruments	MOSFET NCH 100V 14.4A SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 454pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc) Rds On (Max) @ Id, Vgs: 59 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WSON (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock6,144	MOSFET (Metal Oxide)	100V	14.4A (Ta)	6V, 10V	3.8V @ 250µA	5.6nC @ 10V	454pF @ 50V	±20V	-	2.5W (Ta), 20.2W (Tc)	59 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-WSON (2x2)	6-WDFN Exposed Pad
SI4100DY-T1-E3	Vishay Siliconix	MOSFET N-CH 100V 6.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Rds On (Max) @ Id, Vgs: 63 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,226,544	MOSFET (Metal Oxide)	100V	6.8A (Tc)	6V, 10V	4.5V @ 250µA	20nC @ 10V	600pF @ 50V	±20V	-	2.5W (Ta), 6W (Tc)	63 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STB12NM60N	STMicroelectronics	MOSFET N-CH 600V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 410 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock8,880	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4V @ 250µA	30.5nC @ 10V	960pF @ 50V	±25V	-	90W (Tc)	410 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP037N06L3GXKSA1	Infineon Technologies	MOSFET N-CH 60V 90A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 79nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock16,560	MOSFET (Metal Oxide)	60V	90A (Tc)	4.5V, 10V	2.2V @ 93µA	79nC @ 4.5V	13000pF @ 30V	±20V	-	167W (Tc)	3.7 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
HUF75639S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 100V 56A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock441,780	MOSFET (Metal Oxide)	100V	56A (Tc)	10V	4V @ 250µA	130nC @ 20V	2000pF @ 25V	±20V	-	200W (Tc)	25 mOhm @ 56A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PMN30UNEX	Nexperia USA Inc.	MOSFET N-CH 20V SC-74 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 558pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 530mW (Ta), 4.46W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 4.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock24,714	MOSFET (Metal Oxide)	20V	4.8A (Ta)	1.5V, 4.5V	900mV @ 250µA	9nC @ 4.5V	558pF @ 10V	±8V	-	530mW (Ta), 4.46W (Tc)	36 mOhm @ 4.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
DMN7022LFG-7	Diodes Incorporated	MOSFET N-CH 75V 7.8A PWDI3333-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2737pF @ 35V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock20,814	MOSFET (Metal Oxide)	75V	7.8A (Ta)	4.5V, 10V	3V @ 250µA	56.5nC @ 10V	2737pF @ 35V	±20V	-	900mW (Ta)	22 mOhm @ 7.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
CSD17313Q2Q1	Texas Instruments	MOSFET N-CH 30V 5A 6SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 2.3W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 4A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WSON (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock7,272	MOSFET (Metal Oxide)	30V	5A (Tc)	3V, 8V	1.8V @ 250µA	2.7nC @ 4.5V	340pF @ 15V	+10V, -8V	-	2.3W (Ta)	30 mOhm @ 4A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	6-WSON (2x2)	6-WDFN Exposed Pad
BVSS138LT1G	ON Semiconductor	MOSFET N-CH 50V 200MA SOT-23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock210,552	MOSFET (Metal Oxide)	50V	200mA (Ta)	5V	1.5V @ 1mA	-	50pF @ 25V	±20V	-	225mW (Ta)	3.5 Ohm @ 200mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IXTA44P15TTRL	IXYS	MOSFET P-CH 150V 44A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,632	MOSFET (Metal Oxide)	150V	44A (Tc)	10V	4V @ 250µA	175nC @ 10V	13400pF @ 25V	±15V	-	298W (Tc)	65 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMG2305UX-13	Diodes Incorporated	MOSFET P-CH 20V 4.2A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 52 mOhm @ 4.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock967,788	MOSFET (Metal Oxide)	20V	4.2A (Ta)	1.8V, 4.5V	900mV @ 250µA	10.2nC @ 4.5V	808pF @ 15V	±8V	-	1.4W (Ta)	52 mOhm @ 4.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
MCU80N06A-TP	Micro Commercial Co	MOSFET N-CH 60V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock13,746	MOSFET (Metal Oxide)	60 V	80A (Tc)	4.5V, 10V	2.2V @ 250µA	31 nC @ 10 V	1990 pF @ 30 V	±20V	-	68W	8mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB19DP10NMATMA1	Infineon Technologies	TRENCH >=100V PG-TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.04mA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock5,940	MOSFET (Metal Oxide)	100 V	2.9A (Ta), 13.8A (Tc)	10V	4V @ 1.04mA	45 nC @ 10 V	2000 pF @ 50 V	±20V	-	3.8W (Ta), 83W (Tc)	185mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NTH4L160N120SC1	onsemi	SICFET N-CH 1200V 17.3A TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V Vgs (Max): +25V, -15V FET Feature: - Power Dissipation (Max): 111W (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock3,363	SiCFET (Silicon Carbide)	1200 V	17.3A (Tc)	20V	4.3V @ 2.5mA	34 nC @ 20 V	665 pF @ 800 V	+25V, -15V	-	111W (Tc)	224mOhm @ 12A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
FDWS86381-F085	onsemi	MOSFET N-CH 80V 30A POWER56 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJA3440_R1_00001	Panjit International Inc.	SOT-23, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock30,144	MOSFET (Metal Oxide)	40 V	4.3A (Ta)	4.5V, 10V	2.5V @ 250µA	4.8 nC @ 4.5 V	410 pF @ 20 V	±20V	-	1.25W (Ta)	42mOhm @ 4.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IRFL4310TR	Infineon Technologies	MOSFET N-CH 100V 1.6A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	1.6A (Ta)	-	4V @ 250µA	25 nC @ 10 V	330 pF @ 25 V	-	-	-	200mOhm @ 1.6A, 10V	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
RX3L18BBGC16	Rohm Semiconductor	NCH 60V 180A, TO-220AB, POWER MO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 1.84mOhm @ 90A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,940	MOSFET (Metal Oxide)	60 V	180A (Tc)	4.5V, 10V	2.5V @ 1mA	160 nC @ 10 V	11000 pF @ 30 V	±20V	-	192W (Tc)	1.84mOhm @ 90A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
94-2436PBF	Infineon Technologies	MOSFET N-CH 55V 30A DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RS1L145GNTB	Rohm Semiconductor	MOSFET N-CH 60V 14.5A/47A 8HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: -	Stock2,109	MOSFET (Metal Oxide)	60 V	14.5A (Ta), 47A (Tc)	4.5V, 10V	2.7V @ 200µA	37 nC @ 10 V	1880 pF @ 30 V	±20V	-	3W (Ta)	9.7mOhm @ 14.5A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
FBG20N18BSH	EPC Space, LLC	GAN FET HEMT 200V 18A 4FSMD-B FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-SMD Package / Case: 4-SMD, No Lead	Package: -	Stock153	GaNFET (Gallium Nitride)	200 V	18A (Tc)	5V	2.5V @ 3mA	7 nC @ 5 V	900 pF @ 100 V	+6V, -4V	-	-	28mOhm @ 18A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD	4-SMD, No Lead
IXFH34N65X3	IXYS	MOSFET 34A 650V X3 TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.2V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	Package: -	Stock621	MOSFET (Metal Oxide)	650 V	34A (Tc)	10V	5.2V @ 2.5mA	29 nC @ 10 V	2025 pF @ 25 V	±20V	-	446W (Tc)	100mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
TQM110NB04CR-RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 40V 12A/54A 8PDFNU FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1352 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 8-PDFNU (5x6) Package / Case: 8-PowerTDFN	Package: -	Stock14,214	MOSFET (Metal Oxide)	40 V	12A (Ta), 54A (Tc)	7V, 10V	3.8V @ 250µA	25 nC @ 10 V	1352 pF @ 20 V	±20V	-	3.1W (Ta), 68W (Tc)	11mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PDFNU (5x6)	8-PowerTDFN