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Infineon Technologies |
MOSFET P-CH 12V 11.5A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3529pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock15,432 |
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MOSFET (Metal Oxide) | 12V | 11.5A (Tc) | 1.8V, 4.5V | 900mV @ 250µA | 38nC @ 4.5V | 3529pF @ 10V | ±8V | - | 2.5W (Ta) | 14 mOhm @ 11.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 800V 2.8A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 1.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock7,376 |
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MOSFET (Metal Oxide) | 800V | 2.8A (Tc) | 10V | 5V @ 250µA | 33nC @ 10V | 1250pF @ 25V | ±30V | - | 47W (Tc) | 2.6 Ohm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 180A TO263-7-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 239nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock4,992 |
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MOSFET (Metal Oxide) | 30V | 180A (Tc) | 4.5V, 10V | 2.2V @ 140µA | 239nC @ 10V | 17600pF @ 25V | ±16V | - | 188W (Tc) | 1.05 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 30V 59A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,960 |
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MOSFET (Metal Oxide) | 30V | 59A (Tc) | 4.5V, 10V | 2.25V @ 25µA | 15nC @ 4.5V | 1210pF @ 15V | ±20V | - | 57W (Tc) | 9.5 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 60V 56A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 99W (Tc)
- Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 43A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock2,240 |
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MOSFET (Metal Oxide) | 60V | 56A (Tc) | 6V, 10V | 3.7V @ 100µA | 87nC @ 10V | 3020pF @ 25V | ±20V | - | 99W (Tc) | 7.9 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Renesas Electronics America |
MOSFET N-CH 100V MP-3/TO-251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 18A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (MP-3)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,536 |
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MOSFET (Metal Oxide) | 100V | 36A (Ta) | 4.5V, 10V | - | 72nC @ 10V | 3600pF @ 10V | ±20V | - | 1W (Ta), 50W (Tc) | 33 mOhm @ 18A, 10V | 150°C (TJ) | Through Hole | TO-251 (MP-3) | TO-251-3 Short Leads, IPak, TO-251AA |
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Texas Instruments |
N-CHANNEL NEXFET POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 195W (Tc)
- Rds On (Max) @ Id, Vgs: 1 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (5x6)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock4,080 |
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MOSFET (Metal Oxide) | 30V | 100A (Ta) | 4.5V, 10V | 1.8V @ 250µA | 64nC @ 4.5V | 9000pF @ 15V | ±20V | - | 3.2W (Ta), 195W (Tc) | 1 mOhm @ 35A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 20V 3A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.14W (Ta)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock156,300 |
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MOSFET (Metal Oxide) | 20V | 3A (Ta) | 4.5V, 10V | 3V @ 250µA | 5.5nC @ 5V | - | ±20V | - | 1.14W (Ta) | 80 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Nexperia USA Inc. |
MOSFET N-CH 20V SOT1220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 460mW (Ta), 12.5W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-DFN2020MD (2x2)
- Package / Case: 6-UDFN Exposed Pad
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Package: 6-UDFN Exposed Pad |
Stock6,976 |
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MOSFET (Metal Oxide) | 20V | 7.5A (Ta) | 2.5V, 4.5V | 1.25V @ 250µA | 15nC @ 4.5V | 930pF @ 10V | ±12V | - | 460mW (Ta), 12.5W (Tc) | 20 mOhm @ 7.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN2020MD (2x2) | 6-UDFN Exposed Pad |
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Vishay Siliconix |
MOSFET P-CH 40V 46A PPAK SO-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 144nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 39W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock6,144 |
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MOSFET (Metal Oxide) | 40V | 46A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 144nC @ 10V | 4150pF @ 20V | ±20V | - | 5W (Ta), 39W (Tc) | 10 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 20V 1.5A SC70-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 423pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 420mW (Ta)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock692,640 |
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MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4.5V | 1.5V @ 250µA | 6.3nC @ 4.5V | 423pF @ 10V | ±8V | - | 420mW (Ta) | 90 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 | 6-TSSOP, SC-88, SOT-363 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 8A TO-220F-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock19,836 |
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MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 5V @ 250µA | 24nC @ 10V | 1130pF @ 25V | ±30V | - | 42W (Tc) | 1.05 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 100V 5.2A TO220FP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock14,580 |
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MOSFET (Metal Oxide) | 100V | 5.2A (Tc) | 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | ±20V | - | 37W (Tc) | 600 mOhm @ 3.1A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 30V 14A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 15A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? ST
- Package / Case: DirectFET? Isometric ST
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Package: DirectFET? Isometric ST |
Stock81,600 |
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MOSFET (Metal Oxide) | 30V | 14A (Ta), 55A (Tc) | 4.5V, 10V | 2.35V @ 250µA | 17nC @ 4.5V | 1300pF @ 15V | ±20V | - | 2.1W (Ta), 42W (Tc) | 8.1 mOhm @ 15A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? ST | DirectFET? Isometric ST |
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Texas Instruments |
MOSFET N-CH 25V 113A 8SON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 113A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 12.5V
- Vgs (Max): +16V, -12V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (5x6)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock8,304 |
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MOSFET (Metal Oxide) | 25V | 22A (Ta), 113A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 8.9nC @ 4.5V | 1300pF @ 12.5V | +16V, -12V | - | 3.1W (Ta) | 4.5 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 40V 28A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1181pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,056 |
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MOSFET (Metal Oxide) | 40V | 28A (Tc) | 4.5V, 10V | 3V @ 250µA | 21.3nC @ 10V | 1181pF @ 20V | ±20V | - | 1.6W (Ta) | 24 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock21,192 |
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MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 4V @ 250µA | 27nC @ 10V | 740pF @ 25V | ±20V | - | 48W (Tc) | 24.5 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 200V 30A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1597pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock431,244 |
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MOSFET (Metal Oxide) | 200V | 30A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 1597pF @ 25V | ±20V | - | 125W (Tc) | 75 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 7A 8MLP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power33
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock51,612 |
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MOSFET (Metal Oxide) | 100V | 7A (Ta), 18A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 22nC @ 10V | 1290pF @ 50V | ±20V | - | 2.3W (Ta), 41W (Tc) | 24 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 20V 140MA SC-75A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75A
- Package / Case: SC-75A
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Package: SC-75A |
Stock1,641,024 |
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MOSFET (Metal Oxide) | 20V | 140mA (Ta) | 1.5V, 4.5V | 1.2V @ 250µA | 0.75nC @ 4.5V | - | ±6V | - | 250mW (Ta) | 5 Ohm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-75A | SC-75A |
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Infineon Technologies |
MOSFET N-CH 30V 10.8A 8SO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 10.8A (Ta) | 4.5V | 3V @ 250µA | 26 nC @ 5 V | 1801 pF @ 10 V | ±20V | - | 2.5W (Ta) | 14mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock8,898 |
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MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | - | 4V @ 250µA | 8.3 nC @ 10 V | 180 pF @ 25 V | ±20V | - | 2.5W (Ta), 25W (Tc) | 540mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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onsemi |
MOSFET N-CH 650V 44A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 312W (Tc)
- Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Stock2,676 |
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MOSFET (Metal Oxide) | 650 V | 44A (Tc) | 10V | 4.5V @ 4.4mA | 78 nC @ 10 V | 3090 pF @ 400 V | ±30V | - | 312W (Tc) | 67mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Goford Semiconductor |
P-CH, -100V, 20A, RD(MAX)<116M@-
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3354 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 69W (Tc)
- Rds On (Max) @ Id, Vgs: 116mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock9,069 |
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MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 10V | 3V @ 250µA | 70 nC @ 10 V | 3354 pF @ 50 V | ±20V | - | 69W (Tc) | 116mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 200V 6.5A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 74W (Tc)
- Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,355 |
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MOSFET (Metal Oxide) | 200 V | 6.5A (Tc) | 10V | 4V @ 250µA | 29 nC @ 10 V | 700 pF @ 25 V | ±20V | - | 3W (Ta), 74W (Tc) | 800mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 65V 36A POWERDI3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 65 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 2.12W (Ta), 39.06W (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8 (Type UX)
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 65 V | 36A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 15.3 nC @ 10 V | 891 pF @ 30 V | ±16V | - | 2.12W (Ta), 39.06W (Tc) | 20mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
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Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -30A, -30V
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 27W (Tc)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PPAK (3x3)
- Package / Case: 8-PowerWDFN
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Package: - |
Stock17,985 |
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MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 17 nC @ 4.5 V | 2500 pF @ 15 V | ±20V | - | 27W (Tc) | 18mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PPAK (3x3) | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
40V, 124A, SINGLE N-CHANNEL POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 124A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4387 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Stock12,000 |
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MOSFET (Metal Oxide) | 40 V | 16A (Ta), 124A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 76 nC @ 10 V | 4387 pF @ 20 V | ±20V | - | 2W (Ta), 125W (Tc) | 4.3mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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