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Infineon Technologies |
MOSFET N-CH 650V 3.2A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 135µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,312 |
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MOSFET (Metal Oxide) | 650V | 3.2A (Tc) | 10V | 3.9V @ 135µA | 17nC @ 10V | 400pF @ 25V | ±20V | - | 38W (Tc) | 1.4 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
Infineon Technologies |
MOSFET N-CH 30V 140A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,344 |
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MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 50nC @ 4.5V | 4010pF @ 15V | ±20V | - | 140W (Tc) | 4.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 18A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1229pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251B
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock6,336 |
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MOSFET (Metal Oxide) | 30V | 18A (Ta), 46A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 33nC @ 10V | 1229pF @ 15V | ±20V | - | 2.5W (Ta), 50W (Tc) | 5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251B | TO-251-3 Stub Leads, IPak |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 18A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,520 |
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MOSFET (Metal Oxide) | 30V | 18A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 36nC @ 10V | 1900pF @ 15V | ±20V | - | 3.1W (Ta) | 6.5 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 200V 6A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 700 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,856 |
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MOSFET (Metal Oxide) | 200V | 6A (Tc) | 10V | 4V @ 250µA | 21nC @ 10V | 480pF @ 25V | ±20V | - | 1.75W (Ta), 50W (Tc) | 700 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 60V 8.8A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock29,388 |
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MOSFET (Metal Oxide) | 60V | 8.8A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 280 mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 7.3A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 7.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock467,064 |
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MOSFET (Metal Oxide) | 30V | 7.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 22nC @ 10V | 830pF @ 15V | ±20V | - | 2.5W (Ta) | 28 mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 100V 1.3A 4-DIP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 780mA, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Package / Case: 4-DIP (0.300", 7.62mm)
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Package: 4-DIP (0.300", 7.62mm) |
Stock168,360 |
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MOSFET (Metal Oxide) | 100V | 1.3A (Ta) | 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | ±20V | - | 1.3W (Ta) | 270 mOhm @ 780mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Infineon Technologies |
MOSFET N-CH 60V BARE DIE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 196µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Sawn on foil
- Package / Case: Die
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Package: Die |
Stock4,960 |
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MOSFET (Metal Oxide) | 60V | 3A (Tj) | 10V | 4V @ 196µA | - | - | - | - | - | 100 mOhm @ 2A, 10V | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET COOLMOS 700V TO251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 70µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 163pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Stub Leads, IPak
|
Package: TO-251-3 Stub Leads, IPak |
Stock2,720 |
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MOSFET (Metal Oxide) | 700V | 4A (Tc) | 10V | 3.5V @ 70µA | 7.8nC @ 10V | 163pF @ 100V | ±20V | - | 42W (Tc) | 2 Ohm @ 1A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Renesas Electronics America |
MOSFET N-CH 100V 80A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 147nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 40A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock5,312 |
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MOSFET (Metal Oxide) | 100V | 80A (Ta) | 10V | - | 147nC @ 10V | 10000pF @ 10V | ±20V | - | 30W (Tc) | 5.5 mOhm @ 40A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Texas Instruments |
MOSFET N-CH 40V 200A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Ta)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock5,232 |
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MOSFET (Metal Oxide) | 40V | 200A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 75nC @ 4.5V | 11400pF @ 20V | ±20V | - | 250W (Ta) | 1.7 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 75V 120A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 234nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15450pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 306W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3,136 |
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MOSFET (Metal Oxide) | 75V | 120A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 234nC @ 10V | 15450pF @ 25V | ±16V | - | 306W (Tc) | 4.2 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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IXYS |
MOSFET N-CH 100V 60A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock68,568 |
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MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 4.5V @ 50µA | 49nC @ 10V | 2650pF @ 25V | ±30V | - | 176W (Tc) | 18 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET BVDSS: 31V 40V POWERDI506
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2082pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock20,778 |
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MOSFET (Metal Oxide) | 40V | 15.7A (Ta), 100A (Tc) | 10V | 4V @ 250µA | 41.9nC @ 10V | 2082pF @ 25V | ±20V | - | 2.8W (Ta), 136W (Tc) | 7.6 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Nexperia USA Inc. |
MOSFET N-CH 25V 100A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6380pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 121W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SOT-1023, 4-LFPAK
|
Package: SOT-1023, 4-LFPAK |
Stock130,050 |
|
MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 105nC @ 10V | 6380pF @ 12V | ±20V | - | 121W (Tc) | 1.2 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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Vishay Siliconix |
MOSFET P-CH 150V 1.4A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock162,780 |
|
MOSFET (Metal Oxide) | 150V | 1.4A (Tc) | 6V, 10V | 4V @ 250µA | 19nC @ 10V | 510pF @ 50V | ±20V | - | 2W (Ta), 3.2W (Tc) | 750 mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
|
|
STMicroelectronics |
MOSFET N-CH 800V 10.5A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock13,698 |
|
MOSFET (Metal Oxide) | 800V | 10.5A (Tc) | 10V | 4.5V @ 100µA | 87nC @ 10V | 2620pF @ 25V | ±30V | - | 190W (Tc) | 750 mOhm @ 5.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -140A, -60
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 183W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock3,570 |
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MOSFET (Metal Oxide) | 60 V | 140A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 420 nC @ 10 V | 24000 pF @ 25 V | ±20V | - | 183W (Tc) | 4.6mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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MOSLEADER |
Single N 30V 5.1A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 66W (Tc)
- Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 3.5V @ 250µA | 31 nC @ 10 V | 630 pF @ 100 V | ±20V | - | 66W (Tc) | 520mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 950V 6A ITO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1487 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 950 V | 6A (Tc) | 10V | 5V @ 250µA | 20.3 nC @ 10 V | 1487 pF @ 25 V | ±30V | - | 40W (Tc) | 2.2Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
AUTOMOTIVE-GRADE N-CHANNEL 500 V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 71mOhm @ 19A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock3,000 |
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MOSFET (Metal Oxide) | 500 V | 38A (Tc) | 10V | 5V @ 250µA | 57 nC @ 10 V | 2300 pF @ 100 V | ±25V | - | 250W (Tc) | 71mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET P-CH 30V 50A 8DFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: V-DFN3333-8 (Type B)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock8,913 |
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MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 64.2 nC @ 10 V | 2826 pF @ 15 V | ±25V | - | 1W (Ta) | 6.8mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | V-DFN3333-8 (Type B) | 8-PowerVDFN |
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Microchip Technology |
MOSFET SIC 1200V 17 MOHM TO-247
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V
- Vgs (Max): +22V, -10V
- FET Feature: -
- Power Dissipation (Max): 455W (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Stock6 |
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SiCFET (Silicon Carbide) | 1200 V | 113A (Tc) | 20V | 2.7V @ 4.5mA (Typ) | 249 nC @ 20 V | 5280 pF @ 1000 V | +22V, -10V | - | 455W (Tc) | 22mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 170A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7620 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 85A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | 170A (Tc) | 10V | 4.5V @ 4mA | 122 nC @ 10 V | 7620 pF @ 25 V | ±20V | - | 520W (Tc) | 6.7mOhm @ 85A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Central Semiconductor Corp |
MOSFET N-CH 30V 3.6A DIE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
- Vgs (Max): 12V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 3.6A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 13 nC @ 4.5 V | 590 pF @ 10 V | 12V | - | - | 78mOhm @ 1.8A, 2.5V | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Nexperia USA Inc. |
PSMP012-30YE/SOT669/LFPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 67.3A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 67.3A | 10V | - | - | - | - | - | - | - | - | - | - | - |