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Infineon Technologies |
MOSFET N-CH 55V 89A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,352 |
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MOSFET (Metal Oxide) | 55V | 89A (Tc) | 4V, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | ±16V | - | 3.8W (Ta), 170W (Tc) | 10 mOhm @ 46A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 26A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 26A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MT
- Package / Case: DirectFET? Isometric MT
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Package: DirectFET? Isometric MT |
Stock19,008 |
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MOSFET (Metal Oxide) | 20V | 26A (Ta), 85A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 45nC @ 4.5V | 3440pF @ 15V | ±20V | - | 3.6W (Ta), 42W (Tc) | 3.8 mOhm @ 26A, 10V | - | Surface Mount | DIRECTFET? MT | DirectFET? Isometric MT |
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Infineon Technologies |
MOSFET P-CH 55V 74A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 38A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,944 |
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MOSFET (Metal Oxide) | 55V | 74A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 3400pF @ 25V | ±20V | - | 3.8W (Ta), 200W (Tc) | 20 mOhm @ 38A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1000V 14A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock390,000 |
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MOSFET (Metal Oxide) | 1000V | 14A (Tc) | 10V | 4.5V @ 4mA | 220nC @ 10V | 4500pF @ 25V | ±20V | - | 360W (Tc) | 750 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 4.5A TO220FM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 2.25A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-2 Full Pack
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Package: TO-220-2 Full Pack |
Stock2,448 |
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MOSFET (Metal Oxide) | 600V | 4.5A (Ta) | 10V | 4V @ 1mA | 16nC @ 10V | 500pF @ 25V | ±30V | - | 35W (Tc) | 2.1 Ohm @ 2.25A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
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Diodes Incorporated |
MOSFET P-CH 60V 0.45A SOT223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock120,180 |
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MOSFET (Metal Oxide) | 60V | 450mA (Ta) | 10V | 3.5V @ 1mA | - | 100pF @ 18V | ±20V | - | 2W (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 100V 100A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 378nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10640pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264
- Package / Case: TO-264-3, TO-264AA
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Package: TO-264-3, TO-264AA |
Stock90,072 |
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MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 4V @ 250µA | 378nC @ 10V | 10640pF @ 25V | ±20V | - | 300W (Tc) | 11 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1018pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock14,328 |
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MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 1018pF @ 25V | ±30V | - | 3.1W (Ta), 125W (Tc) | 850 mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 14A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock10,296 |
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MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 4V @ 250µA | 26nC @ 10V | 670pF @ 25V | ±20V | - | 3.7W (Ta), 88W (Tc) | 160 mOhm @ 8.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 55V 75A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 7565pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 258W (Tc)
- Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,936 |
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MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 2V @ 1mA | 60nC @ 5V | 7565pF @ 25V | ±15V | - | 258W (Tc) | 5.4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 60V 12A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock121,452 |
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MOSFET (Metal Oxide) | 60V | 12A (Tc) | 10V | 4V @ 250µA | 12nC @ 10V | 315pF @ 25V | ±20V | - | 30W (Tc) | 100 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 25V 19A 8SON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 12V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock7,168 |
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MOSFET (Metal Oxide) | 25V | 19A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 18.3nC @ 10V | 1230pF @ 12V | ±16V | - | 2.1W (Ta), 30W (Tc) | 3.1 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock6,544 |
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MOSFET (Metal Oxide) | 40V | - | 10V | 3.5V @ 250µA | 47nC @ 10V | 3300pF @ 25V | ±20V | - | 3.8W (Ta), 106W (Tc) | 1.7 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 13.5A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 218W (Tc)
- Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock21,396 |
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MOSFET (Metal Oxide) | 500V | 13.5A (Tc) | 10V | 4V @ 250µA | 56nC @ 10V | 2055pF @ 25V | ±30V | - | 218W (Tc) | 480 mOhm @ 6.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 60V 40A 8TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 46W (Tc)
- Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock4,944 |
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MOSFET (Metal Oxide) | 60V | 40A (Tc) | 6V, 10V | 3.3V @ 20µA | 21nC @ 10V | 1500pF @ 30V | ±20V | - | 2.1W (Ta), 46W (Tc) | 6.8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,320 |
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MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 370pF @ 25V | ±20V | - | 45W (Tc) | 75 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 30V 15A 8PSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 831pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 15A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PSOP
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock4,080 |
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MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 15nC @ 10V | 831pF @ 15V | ±20V | - | 3W (Ta) | 9.1 mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | 8-PSOP | 8-SMD, Flat Lead |
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Texas Instruments |
MOSFET P-CH 20V 4A 9DSBGA
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V
- Vgs (Max): -6V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 9-DSBGA
- Package / Case: 9-UFBGA, DSBGA
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Package: 9-UFBGA, DSBGA |
Stock2,880 |
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MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.8V, 4.5V | 1.05V @ 250µA | 7.5nC @ 4.5V | 1010pF @ 10V | -6V | - | 500mW (Ta) | 26 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 9-DSBGA | 9-UFBGA, DSBGA |
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Infineon Technologies |
MOSFET N-CH 650V 4.5A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock61,776 |
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MOSFET (Metal Oxide) | 650V | 4.5A (Tc) | 10V | 3.9V @ 200µA | 25nC @ 10V | 490pF @ 25V | ±20V | - | 50W (Tc) | 950 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N CH 500V 22A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1973pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 11A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock7,320 |
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MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 4V @ 250µA | 62.5nC @ 10V | 1973pF @ 50V | ±25V | - | 190W (Tc) | 130 mOhm @ 11A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 14A TO-251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 68 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251A
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock53,016 |
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MOSFET (Metal Oxide) | 100V | 4A (Ta), 14A (Tc) | 4.5V, 10V | 2.9V @ 250µA | 10nC @ 10V | 390pF @ 50V | ±20V | - | 2.5W (Ta), 30W (Tc) | 68 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 100V 18A TSDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 12µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Rds On (Max) @ Id, Vgs: 44 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock517,500 |
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MOSFET (Metal Oxide) | 100V | 5.3A (Ta), 18A (Tc) | 6V, 10V | 2.7V @ 12µA | 9.1nC @ 10V | 640pF @ 50V | ±20V | - | 29W (Tc) | 44 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5.5A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
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Package: 3-SMD, Flat Leads |
Stock115,182 |
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MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | 840pF @ 10V | ±8V | - | 500mW (Ta) | 29.8 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 30V 0.25A SST3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 250mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SST3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock456,372 |
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MOSFET (Metal Oxide) | 30V | 250mA (Ta) | 4V, 10V | 2.5V @ 1mA | - | 30pF @ 10V | ±20V | - | 200mW (Ta) | 1.4 Ohm @ 250mA, 10V | 150°C (TJ) | Surface Mount | SST3 | TO-236-3, SC-59, SOT-23-3 |
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STMicroelectronics |
MOSFET N-CH 600V 300MA SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Tc)
- Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock1,258,404 |
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MOSFET (Metal Oxide) | 600V | 300mA (Tc) | 10V | 4.5V @ 50µA | 6.9nC @ 10V | 94pF @ 25V | ±30V | - | 3.3W (Tc) | 15 Ohm @ 400mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 600V 22A TO247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5620 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 22A (Tc) | - | 4V @ 250µA | 110 nC @ 10 V | 5620 pF @ 25 V | - | - | 250W (Tc) | 190mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Renesas Electronics Corporation |
MOSFET N-CH 200V 8A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3Z)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 200 V | 8A (Tc) | - | 4.5V @ 1mA | 12 nC @ 10 V | 390 pF @ 10 V | - | - | - | 430mOhm @ 4A, 10V | - | Surface Mount | TO-252 (MP-3Z) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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onsemi |
FET 150V 134.0 MOHM MLP33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 26W (Tc)
- Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | 2.8A (Ta), 9.4A (Tc) | 6V, 10V | 4V @ 250µA | 5.9 nC @ 10 V | 345 pF @ 75 V | ±20V | - | 2.3W (Ta), 26W (Tc) | 134mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |