Page 445 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF1503LPBF
Infineon Technologies

MOSFET N-CH 30V 75A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,840
SPB73N03S2L-08
Infineon Technologies

MOSFET N-CH 30V 73A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock89,604
RJK5031DPD-00#J2
Renesas Electronics America

MOSFET N-CH 500V 3A MP3A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,320
MCH6341-TL-E
ON Semiconductor

MOSFET P-CH 30V 5A MCPH6

Package: 6-SMD, Flat Leads

Stock108,000
SIE820DF-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 50A 10-POLARPAK

Package: 10-PolarPAK? (S)

Stock2,304
FQD9N25TF
Fairchild/ON Semiconductor

MOSFET N-CH 250V 7.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,384
TK42A12N1,S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 120V 42A TO-220

Package: TO-220-3 Full Pack, Isolated Tab

Stock7,520
IRF730ASTRLPBF
Vishay Siliconix

MOSFET N-CH 400V 5.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock18,084
FQU5N60CTU
Fairchild/ON Semiconductor

MOSFET N-CH 600V 2.8A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock63,540
BUK6246-75C,118
Nexperia USA Inc.

MOSFET N-CH 75V 22A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,896
IXFN110N60P3
IXYS

MOSFET N-CH 600V 90A SOT227

Package: SOT-227-4, miniBLOC

Stock5,360
STFW3N170
STMicroelectronics

MOSFET N-CH 1700V 2.6A

Package: TO-3P-3 Full Pack

Stock6,432
IRFP9140PBF
Vishay Siliconix

MOSFET P-CH 100V 21A TO-247AC

Package: TO-247-3

Stock21,144
IRF7749L2TRPBF
Infineon Technologies

MOSFET N-CH 60V DIRECTFET L8

Package: DirectFET? Isometric L8

Stock6,480
BSZ22DN20NS3 G
Infineon Technologies

MOSFET N-CH 200V 7A 8TSDSON

Package: 8-PowerTDFN

Stock4,240
DMG4800LK3-13
Diodes Incorporated

MOSFET N-CH 30V 10A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock264,072
AO7404
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V 1A SC70-3

Package: SC-70, SOT-323

Stock945,000
IRFI4228PBF
Infineon Technologies

MOSFET N-CH 150V 34A TO-220AB FP

Package: TO-220-3 Full Pack

Stock20,892
STP34NM60ND
STMicroelectronics

MOSFET N-CH 600V 29A TO-220AB

Package: TO-220-3

Stock390,348
IRF9393TRPBF
Infineon Technologies

MOSFET P-CH 30V 9.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock717,312

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF1503LPBF	Infineon Technologies	MOSFET N-CH 30V 75A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 140A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,840	MOSFET (Metal Oxide)	30V	75A (Tc)	10V	4V @ 250µA	200nC @ 10V	5730pF @ 25V	±20V	-	200W (Tc)	3.3 mOhm @ 140A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
SPB73N03S2L-08	Infineon Technologies	MOSFET N-CH 30V 73A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 55µA Gate Charge (Qg) (Max) @ Vgs: 46.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock89,604	MOSFET (Metal Oxide)	30V	73A (Tc)	4.5V, 10V	2V @ 55µA	46.2nC @ 10V	1710pF @ 25V	±20V	-	107W (Tc)	8.1 mOhm @ 36A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RJK5031DPD-00#J2	Renesas Electronics America	MOSFET N-CH 500V 3A MP3A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40.3W (Tc) Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,320	MOSFET (Metal Oxide)	500V	3A (Ta)	10V	-	-	280pF @ 25V	±30V	-	40.3W (Tc)	3.2 Ohm @ 1.5A, 10V	150°C (TJ)	Surface Mount	MP-3A	TO-252-3, DPak (2 Leads + Tab), SC-63
MCH6341-TL-E	ON Semiconductor	MOSFET P-CH 30V 5A MCPH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 59 mOhm @ 3A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 6-MCPH Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock108,000	MOSFET (Metal Oxide)	30V	5A (Ta)	4V, 10V	-	10nC @ 10V	430pF @ 10V	±20V	-	1.5W (Ta)	59 mOhm @ 3A, 10V	-	Surface Mount	6-MCPH	6-SMD, Flat Leads
SIE820DF-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 50A 10-POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 18A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (S) Package / Case: 10-PolarPAK? (S)	Package: 10-PolarPAK? (S)	Stock2,304	MOSFET (Metal Oxide)	20V	50A (Tc)	2.5V, 4.5V	2V @ 250µA	143nC @ 10V	4300pF @ 10V	±12V	-	5.2W (Ta), 104W (Tc)	3.5 mOhm @ 18A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (S)	10-PolarPAK? (S)
FQD9N25TF	Fairchild/ON Semiconductor	MOSFET N-CH 250V 7.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,384	MOSFET (Metal Oxide)	250V	7.4A (Tc)	10V	5V @ 250µA	20nC @ 10V	700pF @ 25V	±30V	-	2.5W (Ta), 55W (Tc)	420 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
TK42A12N1,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 120V 42A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 60V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 21A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock7,520	MOSFET (Metal Oxide)	120V	42A (Tc)	10V	4V @ 1mA	52nC @ 10V	3100pF @ 60V	±20V	-	35W (Tc)	9.4 mOhm @ 21A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack, Isolated Tab
IRF730ASTRLPBF	Vishay Siliconix	MOSFET N-CH 400V 5.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,084	MOSFET (Metal Oxide)	400V	5.5A (Tc)	10V	4.5V @ 250µA	22nC @ 10V	600pF @ 25V	±30V	-	74W (Tc)	1 Ohm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQU5N60CTU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 2.8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock63,540	MOSFET (Metal Oxide)	600V	2.8A (Tc)	10V	4V @ 250µA	19nC @ 10V	670pF @ 25V	±30V	-	2.5W (Ta), 49W (Tc)	2.5 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
BUK6246-75C,118	Nexperia USA Inc.	MOSFET N-CH 75V 22A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,896	MOSFET (Metal Oxide)	75V	22A (Tc)	4.5V, 10V	2.8V @ 1mA	21.4nC @ 10V	1280pF @ 25V	±16V	-	60W (Tc)	46 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFN110N60P3	IXYS	MOSFET N-CH 600V 90A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 90A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 245nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1500W (Tc) Rds On (Max) @ Id, Vgs: 56 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,360	MOSFET (Metal Oxide)	600V	90A	10V	5V @ 8mA	245nC @ 10V	18000pF @ 25V	±30V	-	1500W (Tc)	56 mOhm @ 55A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
STFW3N170	STMicroelectronics	MOSFET N-CH 1700V 2.6A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 13 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock6,432	MOSFET (Metal Oxide)	1700V	2.6A (Tc)	10V	5V @ 250µA	44nC @ 10V	1100pF @ 100V	±30V	-	63W (Tc)	13 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
IRFP9140PBF	Vishay Siliconix	MOSFET P-CH 100V 21A TO-247AC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock21,144	MOSFET (Metal Oxide)	100V	21A (Tc)	10V	4V @ 250µA	61nC @ 10V	1400pF @ 25V	±20V	-	180W (Tc)	200 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRF7749L2TRPBF	Infineon Technologies	MOSFET N-CH 60V DIRECTFET L8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12320pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 120A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET? Isometric L8	Package: DirectFET? Isometric L8	Stock6,480	MOSFET (Metal Oxide)	60V	33A (Ta), 375A (Tc)	10V	4V @ 250µA	300nC @ 10V	12320pF @ 25V	±20V	-	3.3W (Ta), 125W (Tc)	1.5 mOhm @ 120A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET L8	DirectFET? Isometric L8
BSZ22DN20NS3 G	Infineon Technologies	MOSFET N-CH 200V 7A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 225 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,240	MOSFET (Metal Oxide)	200V	7A (Tc)	10V	4V @ 13µA	5.6nC @ 10V	430pF @ 100V	±20V	-	34W (Tc)	225 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
DMG4800LK3-13	Diodes Incorporated	MOSFET N-CH 30V 10A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.71W (Ta) Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock264,072	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	1.6V @ 250µA	8.7nC @ 5V	798pF @ 10V	±25V	-	1.71W (Ta)	17 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
AO7404	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 20V 1A SC70-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 101pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 225 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock945,000	MOSFET (Metal Oxide)	20V	1A (Ta)	1.8V, 4.5V	800mV @ 250µA	1.57nC @ 4.5V	101pF @ 10V	±8V	-	350mW (Ta)	225 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3	SC-70, SOT-323
IRFI4228PBF	Infineon Technologies	MOSFET N-CH 150V 34A TO-220AB FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock20,892	MOSFET (Metal Oxide)	150V	34A (Tc)	10V	5V @ 250µA	110nC @ 10V	4560pF @ 25V	±30V	-	46W (Tc)	16 mOhm @ 20A, 10V	-40°C ~ 150°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
STP34NM60ND	STMicroelectronics	MOSFET N-CH 600V 29A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock390,348	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	5V @ 250µA	80.4nC @ 10V	2785pF @ 50V	±25V	-	190W (Tc)	110 mOhm @ 14.5A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
IRF9393TRPBF	Infineon Technologies	MOSFET P-CH 30V 9.2A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 9.2A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock717,312	MOSFET (Metal Oxide)	30V	9.2A (Ta)	10V, 20V	2.4V @ 25µA	38nC @ 10V	1110pF @ 25V	±25V	-	2.5W (Ta)	13.3 mOhm @ 9.2A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PSMN4R3-30PL,127	Nexperia USA Inc.	MOSFET N-CH 30V 100A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 41.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 103W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock36,516	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	2.15V @ 1mA	41.5nC @ 10V	2400pF @ 12V	±20V	-	103W (Tc)	4.3 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BS870-7-F	Diodes Incorporated	MOSFET N-CH 60V 0.25A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock18,108,324	MOSFET (Metal Oxide)	60V	250mA (Ta)	10V	3V @ 250µA	-	50pF @ 10V	±20V	-	300mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
STW20NM60	STMicroelectronics	MOSFET N-CH 600V 20A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock48,576	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	54nC @ 10V	1500pF @ 25V	±30V	-	192W (Tc)	290 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
UF3SC120009K4S	Qorvo	SICFET N-CH 1200V 120A TO247-4 FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8512 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 789W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock3,402	SiCFET (Cascode SiCJFET)	1200 V	120A (Tc)	12V	6V @ 10mA	234 nC @ 15 V	8512 pF @ 100 V	±20V	-	789W (Tc)	11mOhm @ 100A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
SSFQ3903	Good-Ark Semiconductor	MOSFET, P-CH, SINGLE, -13A, -30V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.2W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock18,000	MOSFET (Metal Oxide)	30 V	13A (Tc)	4.5V, 10V	2.5V @ 250µA	56 nC @ 4.5 V	4800 pF @ 15 V	±20V	-	4.2W (Tc)	9.5mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
G3R450MT17J	GeneSiC Semiconductor	SIC MOSFET N-CH 9A TO263-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.7V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 91W (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock19,407	SiCFET (Silicon Carbide)	1700 V	9A (Tc)	15V	2.7V @ 2mA	18 nC @ 15 V	454 pF @ 1000 V	±15V	-	91W (Tc)	585mOhm @ 4A, 15V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
FDMS9410L-F085	onsemi	MOSFET N-CH 40V 50A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	50A (Tc)	10V	3V @ 250µA	45 nC @ 10 V	1960 pF @ 20 V	±20V	-	75W (Tj)	4.1mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerVDFN
IQDH45N04LM6ATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1.449mA Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-U04 Package / Case: 8-PowerTDFN	Package: -	Stock14,895	MOSFET (Metal Oxide)	40 V	60A (Ta), 637A (Tc)	4.5V, 10V	2.3V @ 1.449mA	172 nC @ 10 V	12000 pF @ 20 V	±20V	-	3W (Ta), 333W (Tc)	0.45mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-U04	8-PowerTDFN