Page 448 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPB10N03LB G
Infineon Technologies

MOSFET N-CH 30V 50A D2PAK

Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Stock4,800
SI7409ADN-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 7A PPAK 1212-8

Package: PowerPAK? 1212-8

Stock5,056
FQA7N90M_F109
Fairchild/ON Semiconductor

MOSFET N-CH 900V 7A TO-3P

Package: TO-3P-3, SC-65-3

Stock2,176
APT50N60JCU2
Microsemi Corporation

MOSFET N-CH 600V 52A SOT-227

Package: SOT-227-4, miniBLOC

Stock3,296
PHD45N03LTA,118
NXP

MOSFET N-CH 25V 40A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,440
FQI9N25CTU
Fairchild/ON Semiconductor

MOSFET N-CH 250V 8.8A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,080
SKI10297
Sanken

MOSFET N-CH 100V 34A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,000
IRFH8337TRPBF
Infineon Technologies

MOSFET N-CH 30V 12A 5X6 PQFN

Package: 8-PowerTDFN

Stock624,000
SIHH11N65EF-T1-GE3
Vishay Siliconix

MOSFET N-CHAN 600V 24A POWERPAK

Package: 8-PowerTDFN

Stock3,904
MCH3333A-TL-W
ON Semiconductor

MOSFET P-CH 30V 2A MCPH3

Package: 3-SMD, Flat Leads

Stock4,784
IRF7607TRPBF
Infineon Technologies

MOSFET N-CH 20V 6.5A MICRO8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock621,360
AUIRF1324WL
Infineon Technologies

MOSFET N-CH 24V 240A TO-262

Package: TO-262-3 Wide Leads

Stock6,880
STD3NK90ZT4
STMicroelectronics

MOSFET N-CH 900V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock858,816
FQT4N25TF
Fairchild/ON Semiconductor

MOSFET N-CH 250V 0.83A SOT-223

Package: TO-261-4, TO-261AA

Stock1,044,876
SQJ146EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 75A PPAK SO-8

Package: -

Stock12,213
SSM6J402TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 2A UF6

Package: -

Stock18,570
2SK3815-E
onsemi

NCH 4V DRIVE SERIES

Package: -

Request a Quote
BUK7J1R0-40HX
Nexperia USA Inc.

BUK7J1R0-40H/SOT1023/4 LEADS

Package: -

Stock8,772
GT110N06D5
Goford Semiconductor

N60V, 45A,RD<11M@10V,VTH1.0V~2.4

Package: -

Stock29,988
MCG15P10YHE3-TP
Micro Commercial Co

P-CHANNEL MOSFET, DFN3333

Package: -

Stock29,871

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB10N03LB G	Infineon Technologies	MOSFET N-CH 30V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1639pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Stock4,800	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2V @ 20µA	13nC @ 5V	1639pF @ 15V	±20V	-	58W (Tc)	9.6 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
SI7409ADN-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 7A PPAK 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 11A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock5,056	MOSFET (Metal Oxide)	30V	7A (Ta)	2.5V, 4.5V	1.5V @ 250µA	40nC @ 4.5V	-	±12V	-	1.5W (Ta)	19 mOhm @ 11A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
FQA7N90M_F109	Fairchild/ON Semiconductor	MOSFET N-CH 900V 7A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock2,176	MOSFET (Metal Oxide)	900V	7A (Tc)	10V	5V @ 250µA	52nC @ 10V	1880pF @ 25V	±30V	-	210W (Tc)	1.8 Ohm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
APT50N60JCU2	Microsemi Corporation	MOSFET N-CH 600V 52A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 52A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 22.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,296	MOSFET (Metal Oxide)	600V	52A	10V	3.9V @ 3mA	150nC @ 10V	7200pF @ 25V	±20V	-	290W (Tc)	45 mOhm @ 22.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
PHD45N03LTA,118	NXP	MOSFET N-CH 25V 40A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,440	MOSFET (Metal Oxide)	25V	40A (Tc)	3.5V, 10V	2V @ 1mA	19nC @ 5V	700pF @ 25V	±20V	-	65W (Tc)	21 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FQI9N25CTU	Fairchild/ON Semiconductor	MOSFET N-CH 250V 8.8A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,080	MOSFET (Metal Oxide)	250V	8.8A (Tc)	10V	4V @ 250µA	35nC @ 10V	710pF @ 25V	±30V	-	3.13W (Ta), 74W (Tc)	430 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2Pak, TO-262AA
SKI10297	Sanken	MOSFET N-CH 100V 34A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 650µA Gate Charge (Qg) (Max) @ Vgs: 35.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2540pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 27.9 mOhm @ 17.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,000	MOSFET (Metal Oxide)	100V	34A (Tc)	4.5V, 10V	2.5V @ 650µA	35.8nC @ 10V	2540pF @ 25V	±20V	-	90W (Tc)	27.9 mOhm @ 17.1A, 10V	150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFH8337TRPBF	Infineon Technologies	MOSFET N-CH 30V 12A 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 16.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock624,000	MOSFET (Metal Oxide)	30V	12A (Ta), 35A (Tc)	4.5V, 10V	2.35V @ 25µA	10nC @ 10V	790pF @ 10V	±20V	-	3.2W (Ta), 27W (Tc)	12.8 mOhm @ 16.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerTDFN
SIHH11N65EF-T1-GE3	Vishay Siliconix	MOSFET N-CHAN 600V 24A POWERPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1243pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 382 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 8 x 8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,904	MOSFET (Metal Oxide)	650V	11A (Tc)	10V	4V @ 250µA	70nC @ 10V	1243pF @ 100V	±30V	-	130W (Tc)	382 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 8 x 8	8-PowerTDFN
MCH3333A-TL-W	ON Semiconductor	MOSFET P-CH 30V 2A MCPH3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 215 mOhm @ 1A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock4,784	MOSFET (Metal Oxide)	30V	2A (Ta)	1.8V, 4V	1.3V @ 1mA	2.8nC @ 4V	240pF @ 10V	±10V	-	900mW (Ta)	215 mOhm @ 1A, 4V	150°C (TJ)	Surface Mount	SC-70FL/MCPH3	3-SMD, Flat Leads
IRF7607TRPBF	Infineon Technologies	MOSFET N-CH 20V 6.5A MICRO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock621,360	MOSFET (Metal Oxide)	20V	6.5A (Ta)	2.5V, 4.5V	1.2V @ 250µA	22nC @ 5V	1310pF @ 15V	±12V	-	1.8W (Ta)	30 mOhm @ 6.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
AUIRF1324WL	Infineon Technologies	MOSFET N-CH 24V 240A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7630pF @ 19V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Wide Package / Case: TO-262-3 Wide Leads	Package: TO-262-3 Wide Leads	Stock6,880	MOSFET (Metal Oxide)	24V	240A (Tc)	10V	4V @ 250µA	180nC @ 10V	7630pF @ 19V	±20V	-	300W (Tc)	1.3 mOhm @ 195A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Wide	TO-262-3 Wide Leads
STD3NK90ZT4	STMicroelectronics	MOSFET N-CH 900V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock858,816	MOSFET (Metal Oxide)	900V	3A (Tc)	10V	4.5V @ 50µA	22.7nC @ 10V	590pF @ 25V	±30V	-	90W (Tc)	4.8 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FQT4N25TF	Fairchild/ON Semiconductor	MOSFET N-CH 250V 0.83A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 830mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 415mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock1,044,876	MOSFET (Metal Oxide)	250V	830mA (Tc)	10V	5V @ 250µA	5.6nC @ 10V	200pF @ 25V	±30V	-	2.5W (Tc)	1.75 Ohm @ 415mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
SQJ146EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 75A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock12,213	MOSFET (Metal Oxide)	40 V	75A (Tc)	10V	3.5V @ 250µA	27 nC @ 10 V	1500 pF @ 25 V	±20V	-	75W (Tc)	7mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SSM6J402TU-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 2A UF6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 117mOhm @ 1A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UF6 Package / Case: 6-SMD, Flat Leads	Package: -	Stock18,570	MOSFET (Metal Oxide)	30 V	2A (Ta)	4V, 10V	2.6V @ 1mA	5.3 nC @ 10 V	280 pF @ 15 V	±20V	-	500mW (Ta)	117mOhm @ 1A, 10V	150°C	Surface Mount	UF6	6-SMD, Flat Leads
2SK3815-E	onsemi	NCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUK7J1R0-40HX	Nexperia USA Inc.	BUK7J1R0-40H/SOT1023/4 LEADS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +20V, -10V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock8,772	-	-	220A (Tc)	-	-	-	-	+20V, -10V	-	-	-	-	-	-	-
GT110N06D5	Goford Semiconductor	N60V, 45A,RD<11M@10V,VTH1.0V~2.4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1202 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (4.9x5.75) Package / Case: 8-PowerTDFN	Package: -	Stock29,988	MOSFET (Metal Oxide)	60 V	45A (Tc)	4.5V, 10V	2.4V @ 250µA	31 nC @ 10 V	1202 pF @ 30 V	±20V	-	69W (Tc)	11mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (4.9x5.75)	8-PowerTDFN
MCG15P10YHE3-TP	Micro Commercial Co	P-CHANNEL MOSFET, DFN3333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tj) Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333 Package / Case: 8-VDFN Exposed Pad	Package: -	Stock29,871	MOSFET (Metal Oxide)	100 V	15A (Tc)	4.5V, 10V	2.5V @ 250µA	20.1 nC @ 10 V	1100 pF @ 25 V	±20V	-	50W (Tj)	110mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN3333	8-VDFN Exposed Pad
SSM3K2615TU-LF	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 2A UFM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	Package: -	Stock43,317	MOSFET (Metal Oxide)	60 V	2A (Ta)	3.3V, 10V	2V @ 1mA	6 nC @ 10 V	150 pF @ 10 V	±20V	-	800mW (Ta)	300mOhm @ 1A, 10V	150°C	Surface Mount	UFM	3-SMD, Flat Leads
IGLR60R340D1XUMA1	Infineon Technologies	GAN HV FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 530µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 87.7 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 41.6W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-7 Package / Case: 8-PowerTDFN	Package: -	Stock14,742	GaNFET (Gallium Nitride)	600 V	8.2A (Tc)	-	1.6V @ 530µA	-	87.7 pF @ 400 V	-10V	-	41.6W (Tc)	-	-40°C ~ 150°C (TJ)	Surface Mount	PG-TSON-8-7	8-PowerTDFN
FDP053N08B-F102	onsemi	MOSFET N-CH 80V 75A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 146W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock2,310	MOSFET (Metal Oxide)	80 V	75A (Tc)	10V	4.5V @ 250µA	85 nC @ 10 V	5960 pF @ 40 V	±20V	-	146W (Tc)	5.3mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
DMP2305UQ-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT23 T&R 3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.4W Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock18,000	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	1.8V, 4.5V	900mV @ 250µA	7.6 nC @ 4.5 V	727 pF @ 20 V	±8V	-	1.4W	60mOhm @ 4.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
G3R160MT17D	GeneSiC Semiconductor	SIC MOSFET N-CH 21A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.7V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 175W (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock2,616	SiCFET (Silicon Carbide)	1700 V	21A (Tc)	15V	2.7V @ 5mA	51 nC @ 15 V	1272 pF @ 1000 V	±15V	-	175W (Tc)	208mOhm @ 12A, 15V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
ISC012N04LM6ATMA1	Infineon Technologies	TRENCH <= 40V PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 238A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	Package: -	Stock34,461	MOSFET (Metal Oxide)	40 V	37A (Ta), 238A (Tc)	4.5V, 10V	2.3V @ 250µA	64 nC @ 10 V	4600 pF @ 20 V	±20V	-	3W (Ta), 125W (Tc)	1.2mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
STP48N30M8	STMicroelectronics	MOSFET N-CH 300V TO220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AO4441L	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 60V 4A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	4A (Ta)	4.5V, 10V	3V @ 250µA	20 nC @ 10 V	1120 pF @ 30 V	±20V	-	3.1W (Ta)	100mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)