Page 467 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF9204PBF
Infineon Technologies

MOSFET P-CH 40V 74A TO-220AB

Package: TO-220-3

Stock7,120
IPB80N06S209ATMA1
Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,480
IRLR7833CTRLPBF
Infineon Technologies

MOSFET N-CH 30V 140A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,552
IRF2805STRRPBF
Infineon Technologies

MOSFET N-CH 55V 135A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,968
AOD474B
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 75V 10A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,040
SI7382DP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 14A PPAK SO-8

Package: PowerPAK? SO-8

Stock638,688
NTP75N03L09
ON Semiconductor

MOSFET N-CH 30V 75A TO220AB

Package: TO-220-3

Stock402,840
NTP60N06L
ON Semiconductor

MOSFET N-CH 60V 60A TO220AB

Package: TO-220-3

Stock2,816
IRFSL31N20DTRR
Vishay Siliconix

MOSFET N-CH 200V 31A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,056
IRF6898MTRPBF
Infineon Technologies

MOSFET N-CH 25V 35A DIRECTFET

Package: DirectFET? Isometric MX

Stock5,440
APT15F60B
Microsemi Corporation

MOSFET N-CH 600V 15A TO-247

Package: TO-247-3

Stock5,056
IXTP90N15T
IXYS

MOSFET N-CH 150V 90A TO-220

Package: TO-220-3

Stock7,952
DMNH6012LK3-13
Diodes Incorporated

MOSFET NCH 60V 60A TO252

Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD

Stock6,080
IRF840STRLPBF
Vishay Siliconix

MOSFET N-CH 500V 8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock25,500
IRF1404STRLPBF
Infineon Technologies

MOSFET N-CH 40V 162A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock12,960
SSM5G10TU(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 1.5A UFV

Package: 6-SMD (5 Leads), Flat Lead

Stock36,000
STP38N65M5
STMicroelectronics

MOSFET N-CH 650V 30A TO-220

Package: TO-220-3

Stock7,040
STP17N62K3
STMicroelectronics

MOSFET N-CH 620V 15A TO-220

Package: TO-220-3

Stock21,720
TPH3R003PL,LQ
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

Package: 8-PowerVDFN

Stock26,286
DMP4015SSSQ-13
Diodes Incorporated

MOSFET P-CH 40V 9.1A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock107,706

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF9204PBF	Infineon Technologies	MOSFET P-CH 40V 74A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 56A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7676pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 143W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,120	MOSFET (Metal Oxide)	40V	56A (Ta)	4.5V, 10V	3V @ 100µA	224nC @ 10V	7676pF @ 25V	±20V	-	143W (Tc)	16 mOhm @ 37A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPB80N06S209ATMA1	Infineon Technologies	MOSFET N-CH 55V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 125µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,480	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 125µA	80nC @ 10V	2360pF @ 25V	±20V	-	190W (Tc)	8.8 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLR7833CTRLPBF	Infineon Technologies	MOSFET N-CH 30V 140A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 140A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,552	MOSFET (Metal Oxide)	30V	140A (Ta)	4.5V, 10V	-	-	-	±20V	-	140W (Tc)	-	-	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF2805STRRPBF	Infineon Technologies	MOSFET N-CH 55V 135A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 104A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,968	MOSFET (Metal Oxide)	55V	135A (Tc)	10V	4V @ 250µA	230nC @ 10V	5110pF @ 25V	±20V	-	200W (Tc)	4.7 mOhm @ 104A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AOD474B	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 75V 10A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 37.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 28.5W (Tc) Rds On (Max) @ Id, Vgs: 132 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,040	MOSFET (Metal Oxide)	75V	2.5A (Ta), 10A (Tc)	4.5V, 10V	2.3V @ 250µA	10nC @ 10V	282pF @ 37.5V	±20V	-	2.1W (Ta), 28.5W (Tc)	132 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7382DP-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 14A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock638,688	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	3V @ 250µA	40nC @ 4.5V	-	±20V	-	1.8W (Ta)	4.7 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
NTP75N03L09	ON Semiconductor	MOSFET N-CH 30V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 37.5A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock402,840	MOSFET (Metal Oxide)	30V	75A (Tc)	5V	2V @ 250µA	75nC @ 5V	5635pF @ 25V	±20V	-	2.5W (Ta), 125W (Tc)	8 mOhm @ 37.5A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP60N06L	ON Semiconductor	MOSFET N-CH 60V 60A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,816	MOSFET (Metal Oxide)	60V	60A (Ta)	5V	2V @ 250µA	65nC @ 5V	3075pF @ 25V	±15V	-	2.4W (Ta), 150W (Tj)	16 mOhm @ 30A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFSL31N20DTRR	Vishay Siliconix	MOSFET N-CH 200V 31A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,056	MOSFET (Metal Oxide)	200V	31A (Tc)	10V	5.5V @ 250µA	110nC @ 10V	2370pF @ 25V	±30V	-	3.1W (Ta), 200W (Tc)	82 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF6898MTRPBF	Infineon Technologies	MOSFET N-CH 25V 35A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 213A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5435pF @ 13V Vgs (Max): ±16V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.1W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 35A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock5,440	MOSFET (Metal Oxide)	25V	35A (Ta), 213A (Tc)	4.5V, 10V	2.1V @ 100µA	62nC @ 4.5V	5435pF @ 13V	±16V	Schottky Diode (Body)	2.1W (Ta), 78W (Tc)	1.1 mOhm @ 35A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
APT15F60B	Microsemi Corporation	MOSFET N-CH 600V 15A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2882pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock5,056	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	5V @ 500µA	72nC @ 10V	2882pF @ 25V	±30V	-	290W (Tc)	430 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
IXTP90N15T	IXYS	MOSFET N-CH 150V 90A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,952	MOSFET (Metal Oxide)	150V	90A (Tc)	10V	4.5V @ 1mA	80nC @ 10V	4100pF @ 25V	±30V	-	455W (Tc)	20 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
DMNH6012LK3-13	Diodes Incorporated	MOSFET NCH 60V 60A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1926pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-4L Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Stock6,080	MOSFET (Metal Oxide)	60V	60A (Tc)	4.5V, 10V	3V @ 250µA	35.2nC @ 10V	1926pF @ 30V	±20V	-	2W (Ta)	12 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-4L	TO-252-5, DPak (4 Leads + Tab), TO-252AD
IRF840STRLPBF	Vishay Siliconix	MOSFET N-CH 500V 8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock25,500	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	4V @ 250µA	63nC @ 10V	1300pF @ 25V	±20V	-	3.1W (Ta), 125W (Tc)	850 mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF1404STRLPBF	Infineon Technologies	MOSFET N-CH 40V 162A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,960	MOSFET (Metal Oxide)	40V	162A (Tc)	10V	4V @ 250µA	200nC @ 10V	7360pF @ 25V	±20V	-	3.8W (Ta), 200W (Tc)	4 mOhm @ 95A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SSM5G10TU(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 1.5A UFV FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 213 mOhm @ 1A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFV Package / Case: 6-SMD (5 Leads), Flat Lead	Package: 6-SMD (5 Leads), Flat Lead	Stock36,000	MOSFET (Metal Oxide)	20V	1.5A (Ta)	1.8V, 4V	1V @ 1mA	6.4nC @ 4V	250pF @ 10V	±8V	Schottky Diode (Isolated)	500mW (Ta)	213 mOhm @ 1A, 4V	150°C (TJ)	Surface Mount	UFV	6-SMD (5 Leads), Flat Lead
STP38N65M5	STMicroelectronics	MOSFET N-CH 650V 30A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,040	MOSFET (Metal Oxide)	650V	30A (Tc)	10V	5V @ 250µA	71nC @ 10V	3000pF @ 100V	±25V	-	190W (Tc)	95 mOhm @ 15A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
STP17N62K3	STMicroelectronics	MOSFET N-CH 620V 15A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock21,720	MOSFET (Metal Oxide)	620V	15.5A (Tc)	10V	4.5V @ 100µA	94nC @ 10V	2500pF @ 50V	±30V	-	190W (Tc)	380 mOhm @ 7.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
TPH3R003PL,LQ	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 88A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3825pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 44A, 4.5V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock26,286	MOSFET (Metal Oxide)	30V	88A	4.5V, 10V	2.1V @ 300µA	50nC @ 10V	3825pF @ 15V	±20V	-	90W (Tc)	4.2 mOhm @ 44A, 4.5V	175°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
DMP4015SSSQ-13	Diodes Incorporated	MOSFET P-CH 40V 9.1A 8-SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.45W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock107,706	MOSFET (Metal Oxide)	40V	9.1A (Ta)	4.5V, 10V	2.5V @ 250µA	47.5nC @ 5V	4234pF @ 20V	±25V	-	1.45W (Ta)	11 mOhm @ 9.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NVMFD6H852NLT1G	onsemi	MOSFET N-CH 80V 7A/25A 8DFN DL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	7A (Ta), 25A (Tc)	4.5V, 10V	2V @ 26µA	10 nC @ 10 V	521 pF @ 40 V	±20V	-	3.2W (Ta), 38W (Tc)	25.5mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFN (5x6) Dual Flag (SO8FL-Dual)	8-PowerTDFN
IXTP60N28TM-A	IXYS	MOSFET N-CH TO220AB FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI5618A-13P	Micro Commercial Co	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	1.6A (Ta)	4.5V, 10V	2.5V @ 250µA	12 nC @ 10 V	380 pF @ 30 V	±20V	-	1.2W	160mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IRFS630A	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	6.5A (Tc)	10V	4V @ 250µA	29 nC @ 10 V	650 pF @ 25 V	±30V	-	38W (Tc)	400mOhm @ 3.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
TSM056NH04LCV-RGG	Taiwan Semiconductor Corporation	40V, 54A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2076 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3.1x3.1) Package / Case: 8-PowerWDFN	Package: -	Stock29,865	MOSFET (Metal Oxide)	40 V	16A (Ta), 54A (Tc)	4.5V, 10V	2.2V @ 250µA	33 nC @ 10 V	2076 pF @ 25 V	±16V	-	34W (Tc)	5.6mOhm @ 27A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (3.1x3.1)	8-PowerWDFN
IXTA94N20X4	IXYS	MOSFET 200V 94A N-CH ULTRA TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock5,256	MOSFET (Metal Oxide)	200 V	94A (Tc)	10V	4.5V @ 250µA	77 nC @ 10 V	5050 pF @ 25 V	±20V	-	360W (Tc)	10.6mOhm @ 47A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
CMS25N10D-HF	Comchip Technology	MOSFET P-CH 100V 25A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3848 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	25A (Tc)	4.5V, 10V	2.5V @ 250µA	60 nC @ 10 V	3848 pF @ 15 V	±20V	-	2W (Ta), 60W (Tc)	48mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
RJK0396DPA-00-J53	Renesas Electronics Corporation	MOSFET N-CH 30V 30A 8WPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	30A (Ta)	-	-	9 nC @ 4.5 V	1330 pF @ 10 V	-	-	28W (Tc)	9mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	8-WPAK	8-PowerWDFN