Page 497 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRL3103D1STRLP
Infineon Technologies

MOSFET N-CH 30V 64A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,432
GP1M013A050H
Global Power Technologies Group

MOSFET N-CH 500V 13A TO220

Package: TO-220-3

Stock7,264
SI8405DB-T1-E3
Vishay Siliconix

MOSFET P-CH 12V 3.6A 2X2 4-MFP

Package: 4-XFBGA, CSPBGA

Stock60,000
FQAF7N90
Fairchild/ON Semiconductor

MOSFET N-CH 900V 5.2A TO-3PF

Package: SC-94

Stock6,592
IRL530S
Vishay Siliconix

MOSFET N-CH 100V 15A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock155,412
STS15N4LLF3
STMicroelectronics

MOSFET N-CH 40V 15A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock496,836
IXFT40N50Q
IXYS

MOSFET N-CH 500V 40A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,024
EPC8002ENGR
EPC

TRANS GAN 65V 2A BUMPED DIE

Package: Die

Stock3,120
AOTF454L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 150V 3A TO220F

Package: TO-220-3 Full Pack

Stock7,184
AOD3N40
Alpha & Omega Semiconductor Inc.

MOSFET N CH 400V 2.6A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock208,104
STW70N60M2-4
STMicroelectronics

POWER MOSFET

Package: -

Stock2,304
SIS862DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 40A 1212

Package: PowerPAK? 1212-8

Stock5,040
IXFR32N100Q3
IXYS

MOSFET N-CH 1000V 23A ISOPLUS247

Package: TO-247-3

Stock6,688
NTF6P02T3G
ON Semiconductor

MOSFET P-CH 20V 10A SOT223

Package: TO-261-4, TO-261AA

Stock573,996
IRL60S216
Infineon Technologies

MOSFET N-CH 60V 195A

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock18,180
FDD10N20LZTM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 7.6A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock33,636
IRLSL3036PBF
Infineon Technologies

MOSFET N-CH 60V 195A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock15,426
FDMA8878
Fairchild/ON Semiconductor

MOSFET N-CH 30V 9A MICROFET

Package: 6-VDFN Exposed Pad

Stock15,288
IRFR310TRPBF
Vishay Siliconix

MOSFET N-CH 400V 1.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock642,672
FQD13N10LTM
Fairchild/ON Semiconductor

MOSFET N-CH 100V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock62,388

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL3103D1STRLP	Infineon Technologies	MOSFET N-CH 30V 64A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,432	MOSFET (Metal Oxide)	30V	64A (Tc)	4.5V, 10V	1V @ 250µA	43nC @ 4.5V	1900pF @ 25V	±16V	-	3.1W (Ta), 89W (Tc)	14 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
GP1M013A050H	Global Power Technologies Group	MOSFET N-CH 500V 13A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1918pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 183W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,264	MOSFET (Metal Oxide)	500V	13A (Tc)	10V	4V @ 250µA	36nC @ 10V	1918pF @ 25V	±30V	-	183W (Tc)	480 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
SI8405DB-T1-E3	Vishay Siliconix	MOSFET P-CH 12V 3.6A 2X2 4-MFP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.47W (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	Package: 4-XFBGA, CSPBGA	Stock60,000	MOSFET (Metal Oxide)	12V	3.6A (Ta)	1.8V, 4.5V	950mV @ 250µA	21nC @ 4.5V	-	±8V	-	1.47W (Ta)	55 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-XFBGA, CSPBGA
FQAF7N90	Fairchild/ON Semiconductor	MOSFET N-CH 900V 5.2A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock6,592	MOSFET (Metal Oxide)	900V	5.2A (Tc)	10V	5V @ 250µA	59nC @ 10V	2280pF @ 25V	±30V	-	107W (Tc)	1.55 Ohm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
IRL530S	Vishay Siliconix	MOSFET N-CH 100V 15A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock155,412	MOSFET (Metal Oxide)	100V	15A (Tc)	4V, 5V	2V @ 250µA	28nC @ 5V	930pF @ 25V	±10V	-	3.7W (Ta), 88W (Tc)	160 mOhm @ 9A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STS15N4LLF3	STMicroelectronics	MOSFET N-CH 40V 15A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.7W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock496,836	MOSFET (Metal Oxide)	40V	15A (Tc)	4.5V, 10V	1V @ 250µA	28nC @ 4.5V	2530pF @ 25V	±16V	-	2.7W (Tc)	5 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IXFT40N50Q	IXYS	MOSFET N-CH 500V 40A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,024	MOSFET (Metal Oxide)	500V	40A (Tc)	10V	4.5V @ 4mA	130nC @ 10V	3800pF @ 25V	±30V	-	500W (Tc)	140 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
EPC8002ENGR	EPC	TRANS GAN 65V 2A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.14nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 32.5V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 530 mOhm @ 500mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock3,120	GaNFET (Gallium Nitride)	65V	2A (Ta)	5V	2.5V @ 250µA	0.14nC @ 5V	21pF @ 32.5V	+6V, -5V	-	-	530 mOhm @ 500mA, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
AOTF454L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 150V 3A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 94 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,184	MOSFET (Metal Oxide)	150V	3A (Ta), 13A (Tc)	7V, 10V	4.6V @ 250µA	20nC @ 10V	985pF @ 75V	±20V	-	2.1W (Ta), 41W (Tc)	94 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
AOD3N40	Alpha & Omega Semiconductor Inc.	MOSFET N CH 400V 2.6A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3.1 Ohm @ 1A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock208,104	MOSFET (Metal Oxide)	400V	2.6A (Tc)	10V	4.5V @ 250µA	5.1nC @ 10V	225pF @ 25V	±30V	-	50W (Tc)	3.1 Ohm @ 1A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
STW70N60M2-4	STMicroelectronics	POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,304	MOSFET (Metal Oxide)	600V	68A (Tc)	10V	4V @ 250µA	118nC @ 10V	5200pF @ 100V	±25V	-	450W (Tc)	40 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	-	-	-
SIS862DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 40A 1212 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock5,040	MOSFET (Metal Oxide)	60V	40A (Tc)	4.5V, 10V	2.6V @ 250µA	32nC @ 10V	1320pF @ 30V	±20V	-	3.7W (Ta), 52W (Tc)	8.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
IXFR32N100Q3	IXYS	MOSFET N-CH 1000V 23A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 570W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: TO-247-3	Package: TO-247-3	Stock6,688	MOSFET (Metal Oxide)	1000V	23A (Tc)	10V	6.5V @ 8mA	195nC @ 10V	9940pF @ 25V	±30V	-	570W (Tc)	350 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	TO-247-3
NTF6P02T3G	ON Semiconductor	MOSFET P-CH 20V 10A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 16V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 8.3W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock573,996	MOSFET (Metal Oxide)	20V	10A (Ta)	2.5V, 4.5V	1V @ 250µA	20nC @ 4.5V	1200pF @ 16V	±8V	-	8.3W (Ta)	50 mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRL60S216	Infineon Technologies	MOSFET N-CH 60V 195A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 15330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,180	MOSFET (Metal Oxide)	60V	195A (Tc)	4.5V, 10V	2.4V @ 250µA	255nC @ 4.5V	15330pF @ 25V	±20V	-	375W (Tc)	1.95 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDD10N20LZTM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 7.6A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock33,636	MOSFET (Metal Oxide)	200V	7.6A (Tc)	5V, 10V	2.5V @ 250µA	16nC @ 10V	585pF @ 25V	±20V	-	83W (Tc)	360 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLSL3036PBF	Infineon Technologies	MOSFET N-CH 60V 195A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock15,426	MOSFET (Metal Oxide)	60V	195A (Tc)	4.5V, 10V	2.5V @ 250µA	140nC @ 4.5V	11210pF @ 50V	±16V	-	380W (Tc)	2.4 mOhm @ 165A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
FDMA8878	Fairchild/ON Semiconductor	MOSFET N-CH 30V 9A MICROFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 16 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock15,288	MOSFET (Metal Oxide)	30V	9A (Ta), 10A (Tc)	4.5V, 10V	3V @ 250µA	12nC @ 10V	720pF @ 15V	±20V	-	2.4W (Ta)	16 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
IRFR310TRPBF	Vishay Siliconix	MOSFET N-CH 400V 1.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock642,672	MOSFET (Metal Oxide)	400V	1.7A (Tc)	10V	4V @ 250µA	12nC @ 10V	170pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	3.6 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD13N10LTM	Fairchild/ON Semiconductor	MOSFET N-CH 100V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock62,388	MOSFET (Metal Oxide)	100V	10A (Tc)	5V, 10V	2V @ 250µA	12nC @ 5V	520pF @ 25V	±20V	-	2.5W (Ta), 40W (Tc)	180 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTA26P20P	IXYS	MOSFET P-CH 200V 26A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,856	MOSFET (Metal Oxide)	200V	26A (Tc)	10V	4V @ 250µA	56nC @ 10V	2740pF @ 25V	±20V	-	300W (Tc)	170 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB60NF06T4	STMicroelectronics	MOSFET N-CH 60V 60A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock84,492	MOSFET (Metal Oxide)	60V	60A (Tc)	10V	4V @ 250µA	66nC @ 10V	1810pF @ 25V	±20V	-	110W (Tc)	16 mOhm @ 30A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI2302-ML	MOSLEADER	20V 2.1A 0.35W N Channel SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSP1N60B	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	1A (Tc)	10V	4V @ 250µA	7.7 nC @ 10 V	215 pF @ 25 V	±30V	-	34W (Tc)	12Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
CSD25501F3	Texas Instruments	MOSFET P-CH 20V 3.6A 3LGA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.05V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 10 V Vgs (Max): -20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-LGA (0.73x0.64) Package / Case: 3-XFLGA	Package: -	Stock24,282	MOSFET (Metal Oxide)	20 V	3.6A (Ta)	1.8V, 4.5V	1.05V @ 250µA	1.33 nC @ 4.5 V	385 pF @ 10 V	-20V	-	500mW (Ta)	76mOhm @ 400mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	3-LGA (0.73x0.64)	3-XFLGA
DMP3125L-7	Diodes Incorporated	MOSFET P-CH 30V 2.5A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 254 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock1,628,139	MOSFET (Metal Oxide)	30 V	2.5A (Ta)	4.5V, 10V	2.1V @ 250µA	3.1 nC @ 4.5 V	254 pF @ 25 V	±20V	-	650mW (Ta)	95mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IPP147N12N3GXKSA1	Infineon Technologies	MOSFET N-CH 120V 56A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 56A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 61µA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Stock53,151	MOSFET (Metal Oxide)	120 V	56A (Ta)	10V	4V @ 61µA	49 nC @ 10 V	3220 pF @ 60 V	±20V	-	107W (Tc)	14.7mOhm @ 56A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
RTF016N05FRATL	Rohm Semiconductor	MOSFET N-CH 45V 1.6A TUMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 800mW Rds On (Max) @ Id, Vgs: 190mOhm @ 1.6A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: -	Stock36,567	MOSFET (Metal Oxide)	45 V	1.6A (Ta)	-	1.5V @ 1mA	2.3 nC @ 4.5 V	150 pF @ 10 V	±12V	-	800mW	190mOhm @ 1.6A, 4.5V	150°C	Surface Mount	TUMT3	3-SMD, Flat Leads