Page 495 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSR92PL6327HTSA1
Infineon Technologies

MOSFET P-CH 250V 0.14A SC-59

Package: TO-236-3, SC-59, SOT-23-3

Stock2,080
IRFZ44VZSTRRPBF
Infineon Technologies

MOSFET N-CH 60V 57A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,184
BUK7C3R8-80EJ
NXP

MOSFET N-CH 80V 186A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock3,440
SI2304DS,215
Nexperia USA Inc.

MOSFET N-CH 30V 1.7A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,464
AUIRLSL3036
Infineon Technologies

MOSFET N-CH 60V 270A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,848
AUIRFU4292
Infineon Technologies

MOSFET N CH 250V 9.3A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,152
IXTQ44N50P
IXYS

MOSFET N-CH 500V 44A TO-3P

Package: TO-3P-3, SC-65-3

Stock474,864
NTD4813NHT4G
ON Semiconductor

MOSFET N-CH 30V 40A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock705,036
IXFN44N80
IXYS

MOSFET N-CH 800V 44A SOT-227B

Package: SOT-227-4, miniBLOC

Stock6,496
AUIRFP4310Z
Infineon Technologies

MOSFET NCH 100V 128A TO247AC

Package: TO-247-3

Stock6,012
SIHG33N65EF-GE3
Vishay Siliconix

MOSFET N-CH 650V 31.6A TO-247AC

Package: TO-247-3

Stock10,296
FQPF20N06L
Fairchild/ON Semiconductor

MOSFET N-CH 60V 15.7A TO-220F

Package: TO-220-3 Full Pack

Stock48,216
SI7192DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 60A PPAK SO-8

Package: PowerPAK? SO-8

Stock789,828
STR2P3LLH6
STMicroelectronics

MOSFET P-CH 30V 2A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock295,320
TP65H050G4WS
Transphorm

650 V 34 A GAN FET

Package: -

Stock639
FDD16AN08A0-F085
onsemi

MOSFET N-CH 75V 9A/50A TO252AA

Package: -

Request a Quote
NVHL080N120SC1A
onsemi

SICFET N-CH 1200V 31A TO247-3

Package: -

Stock2,670
PJMF600N65E1_T0_00001
Panjit International Inc.

650V SUPER JUNCITON MOSFET

Package: -

Stock5,874
CPH6318-TL-E
onsemi

MOSFET P-CH 12V 6A 6CPH

Package: -

Request a Quote
SIR188LDP-T1-RE3
Vishay Siliconix

N-CHANNEL 60-V (D-S) MOSFET POWE

Package: -

Stock13,215

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSR92PL6327HTSA1	Infineon Technologies	MOSFET P-CH 250V 0.14A SC-59 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 1V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 109pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 11 Ohm @ 140mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SC-59 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,080	MOSFET (Metal Oxide)	250V	140mA (Ta)	2.8V, 10V	1V @ 130µA	4.8nC @ 10V	109pF @ 25V	±20V	-	500mW (Ta)	11 Ohm @ 140mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SC-59	TO-236-3, SC-59, SOT-23-3
IRFZ44VZSTRRPBF	Infineon Technologies	MOSFET N-CH 60V 57A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,184	MOSFET (Metal Oxide)	60V	57A (Tc)	10V	4V @ 250µA	65nC @ 10V	1690pF @ 25V	±20V	-	92W (Tc)	12 mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7C3R8-80EJ	NXP	MOSFET N-CH 80V 186A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock3,440	MOSFET (Metal Oxide)	80V	-	-	-	-	-	-	-	-	-	-	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
SI2304DS,215	Nexperia USA Inc.	MOSFET N-CH 30V 1.7A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Tc) Rds On (Max) @ Id, Vgs: 117 mOhm @ 500mA, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,464	MOSFET (Metal Oxide)	30V	1.7A (Tc)	4.5V, 10V	2V @ 1mA	4.6nC @ 10V	195pF @ 10V	±20V	-	830mW (Tc)	117 mOhm @ 500mA, 10V	-65°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
AUIRLSL3036	Infineon Technologies	MOSFET N-CH 60V 270A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,848	MOSFET (Metal Oxide)	60V	195A (Tc)	4.5V, 10V	2.5V @ 250µA	140nC @ 4.5V	11210pF @ 50V	±16V	-	380W (Tc)	2.4 mOhm @ 165A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
AUIRFU4292	Infineon Technologies	MOSFET N CH 250V 9.3A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 345 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,152	MOSFET (Metal Oxide)	250V	9.3A (Tc)	10V	5V @ 50µA	20nC @ 10V	705pF @ 25V	±20V	-	100W (Tc)	345 mOhm @ 5.6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IXTQ44N50P	IXYS	MOSFET N-CH 500V 44A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5440pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 658W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock474,864	MOSFET (Metal Oxide)	500V	44A (Tc)	10V	5V @ 250µA	98nC @ 10V	5440pF @ 25V	±30V	-	658W (Tc)	140 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
NTD4813NHT4G	ON Semiconductor	MOSFET N-CH 30V 40A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock705,036	MOSFET (Metal Oxide)	30V	7.6A (Ta), 40A (Tc)	4.5V, 11.5V	2.5V @ 250µA	10nC @ 4.5V	940pF @ 12V	±20V	-	1.27W (Ta), 35.3W (Tc)	13 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFN44N80	IXYS	MOSFET N-CH 800V 44A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 44A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,496	MOSFET (Metal Oxide)	800V	44A	10V	4.5V @ 8mA	380nC @ 10V	10000pF @ 25V	±20V	-	700W (Tc)	165 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
AUIRFP4310Z	Infineon Technologies	MOSFET NCH 100V 128A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 128A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 188nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7120pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 77A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock6,012	MOSFET (Metal Oxide)	100V	128A (Tc)	10V	4V @ 150µA	188nC @ 10V	7120pF @ 50V	±20V	-	278W (Tc)	6 mOhm @ 77A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHG33N65EF-GE3	Vishay Siliconix	MOSFET N-CH 650V 31.6A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 171nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4026pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 109 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock10,296	MOSFET (Metal Oxide)	650V	31.6A (Tc)	10V	4V @ 250µA	171nC @ 10V	4026pF @ 100V	±30V	-	313W (Tc)	109 mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
FQPF20N06L	Fairchild/ON Semiconductor	MOSFET N-CH 60V 15.7A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 7.85A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock48,216	MOSFET (Metal Oxide)	60V	15.7A (Tc)	5V, 10V	2.5V @ 250µA	13nC @ 5V	630pF @ 25V	±20V	-	30W (Tc)	55 mOhm @ 7.85A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
SI7192DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock789,828	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	135nC @ 10V	5800pF @ 15V	±20V	-	6.25W (Ta), 104W (Tc)	1.9 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
STR2P3LLH6	STMicroelectronics	MOSFET P-CH 30V 2A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Tc) Rds On (Max) @ Id, Vgs: 56 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock295,320	MOSFET (Metal Oxide)	30V	2A (Ta)	4.5V, 10V	2.5V @ 250µA	6nC @ 4.5V	639pF @ 25V	±20V	-	350mW (Tc)	56 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
TP65H050G4WS	Transphorm	650 V 34 A GAN FET FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock639	GaNFET (Gallium Nitride)	650 V	34A (Tc)	10V	4.8V @ 700µA	24 nC @ 10 V	1000 pF @ 400 V	±20V	-	119W (Tc)	60mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
FDD16AN08A0-F085	onsemi	MOSFET N-CH 75V 9A/50A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1874 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	75 V	9A (Ta), 50A (Tc)	6V, 10V	4V @ 250µA	47 nC @ 10 V	1874 pF @ 25 V	±20V	-	135W (Tc)	16mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
NVHL080N120SC1A	onsemi	SICFET N-CH 1200V 31A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4.3V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V Vgs (Max): +25, -15V FET Feature: - Power Dissipation (Max): 178W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock2,670	SiCFET (Silicon Carbide)	1200 V	31A (Tc)	20V	4.3V @ 5mA	56 nC @ 20 V	1670 pF @ 800 V	+25, -15V	-	178W (Tc)	110mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
PJMF600N65E1_T0_00001	Panjit International Inc.	650V SUPER JUNCITON MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 554 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB-F Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Stock5,874	MOSFET (Metal Oxide)	700 V	7.3A (Tc)	10V	4V @ 250µA	17 nC @ 10 V	554 pF @ 400 V	±30V	-	32W (Tc)	600mOhm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220AB-F	TO-220-3 Full Pack, Isolated Tab
CPH6318-TL-E	onsemi	MOSFET P-CH 12V 6A 6CPH FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 6-CPH Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	6A (Ta)	-	1V @ 1mA	22 nC @ 4.5 V	1900 pF @ 6 V	±8V	-	1.6W (Ta)	34mOhm @ 3A, 4.5V	150°C	Surface Mount	6-CPH	SOT-23-6 Thin, TSOT-23-6
SIR188LDP-T1-RE3	Vishay Siliconix	N-CHANNEL 60-V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 25.8A (Ta), 93.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 3.75mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock13,215	MOSFET (Metal Oxide)	60 V	25.8A (Ta), 93.6A (Tc)	4.5V, 10V	2.5V @ 250µA	52 nC @ 10 V	2300 pF @ 30 V	±20V	-	5W (Ta), 65.7W (Tc)	3.75mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
MCQ12N06-TP	Micro Commercial Co	MOSFET N-CH 60V 12A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 12A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock78	MOSFET (Metal Oxide)	60 V	12A (Tj)	4.5V, 10V	2.5V @ 250µA	31 nC @ 10 V	1988 pF @ 30 V	±20V	-	3.1W	9mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
PMV50XPAR	Nexperia USA Inc.	PMV50XPA/SOT23/TO-236AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 20 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 490mW (Ta), 4.63W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock7,575	MOSFET (Metal Oxide)	20 V	3.6A (Ta)	1.8V, 4.5V	1V @ 250µA	12 nC @ 4.5 V	744 pF @ 20 V	±10V	-	490mW (Ta), 4.63W (Tc)	60mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
DMN6069SEQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT223 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 11W (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-3 Package / Case: TO-261-4, TO-261AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	4.3A (Ta), 10A (Tc)	4.5V, 10V	3V @ 250µA	16 nC @ 10 V	825 pF @ 30 V	±20V	-	1.2W (Ta), 11W (Tc)	69mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
AO6405L	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 5A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	5A (Ta)	4.5V, 10V	3V @ 250µA	18 nC @ 10 V	840 pF @ 15 V	±20V	-	2W (Ta)	52mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
DMP6111SVT-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V TSOT26 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	2.7A (Ta)	4.5V, 10V	3V @ 250µA	23.2 nC @ 10 V	1283 pF @ 30 V	±20V	-	1.1W (Ta)	115mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
IXTA140P05T-TRL	IXYS	IXTA140P05T FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	140A (Tc)	10V	4V @ 250µA	200 nC @ 10 V	13500 pF @ 25 V	±15V	-	298W (Tc)	9mOhm @ 70A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MSC060SMA070B	Microchip Technology	SICFET N-CH 700V 39A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 143W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock33	SiCFET (Silicon Carbide)	700 V	39A (Tc)	20V	2.4V @ 1mA	56 nC @ 20 V	1175 pF @ 700 V	+23V, -10V	-	143W (Tc)	75mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
BSZ22DN20NS3GATMA1	Infineon Technologies	MOSFET N-CH 200V 7A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: -	Stock10,812	MOSFET (Metal Oxide)	200 V	7A (Tc)	10V	4V @ 13µA	5.6 nC @ 10 V	430 pF @ 100 V	±20V	-	34W (Tc)	225mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN