Page 512 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6604TR1
Infineon Technologies

MOSFET N-CH 30V 12A DIRECTFET

Package: DirectFET? Isometric MQ

Stock18,468
IRF2807ZSTRRPBF
Infineon Technologies

MOSFET N-CH 75V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock18,096
2SK3565(Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 900V 5A TO-220SIS

Package: TO-220-3 Full Pack

Stock5,120
FQA28N50F
Fairchild/ON Semiconductor

MOSFET N-CH 500V 28.4A TO-3P

Package: TO-3P-3, SC-65-3

Stock120,756
FQPF6N70
Fairchild/ON Semiconductor

MOSFET N-CH 700V 3.5A TO-220F

Package: TO-220-3 Full Pack

Stock5,824
FDS6162N3
Fairchild/ON Semiconductor

MOSFET N-CH 20V 21A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,984
R5016ANX
Rohm Semiconductor

MOSFET N-CH 500V 16A TO-220FM

Package: TO-220-2 Full Pack

Stock34,500
NTMFS5C404NLT3G
ON Semiconductor

MOSFET N-CH 40V 47A SO8FL

Package: 8-PowerTDFN

Stock5,440
AOB11C60L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,752
PSMN6R9-100YSFQ
Nexperia USA Inc.

PSMN6R9-100YSF/SOT669/LFPAK

Package: -

Stock7,920
DMP32D4S-7
Diodes Incorporated

MOSFET P-CH 30V 300MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock6,192
TK12A50E,S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 500V TO220SIS

Package: TO-220-3 Full Pack, Isolated Tab

Stock5,760
IRF7855TRPBF
Infineon Technologies

MOSFET N-CH 60V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,176
STL24N60M2
STMicroelectronics

MOSFET N-CH 600V 18A POWERFLAT

Package: 4-PowerFlat? HV

Stock6,976
HUF76629D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 100V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,960
STB23NM60ND
STMicroelectronics

MOSFET N-CH 600V 19.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,368
STP16NF06
STMicroelectronics

MOSFET N-CH 60V 16A TO-220

Package: TO-220-3

Stock1,161,012
NVTFWS012P03P8ZTAG
onsemi

PT8P PORTFOLIO EXPANSION

Package: -

Request a Quote
SI2302DDS-T1-GE3-ML
MOSLEADER

N 20V 2.9A SOT-23

Package: -

Request a Quote
PMZB600UNEL315
NXP Semiconductors

NEXPERIA PMZB600UNE - SMALL SIGN

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6604TR1	Infineon Technologies	MOSFET N-CH 30V 12A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 12A, 7V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MQ Package / Case: DirectFET? Isometric MQ	Package: DirectFET? Isometric MQ	Stock18,468	MOSFET (Metal Oxide)	30V	12A (Ta), 49A (Tc)	4.5V, 7V	2.1V @ 250µA	26nC @ 4.5V	2270pF @ 15V	±12V	-	2.3W (Ta), 42W (Tc)	11.5 mOhm @ 12A, 7V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MQ	DirectFET? Isometric MQ
IRF2807ZSTRRPBF	Infineon Technologies	MOSFET N-CH 75V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,096	MOSFET (Metal Oxide)	75V	75A (Tc)	10V	4V @ 250µA	110nC @ 10V	3270pF @ 25V	±20V	-	170W (Tc)	9.4 mOhm @ 53A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2SK3565(Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,120	MOSFET (Metal Oxide)	900V	5A (Ta)	10V	4V @ 1mA	28nC @ 10V	1150pF @ 25V	±30V	-	45W (Tc)	2.5 Ohm @ 3A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
FQA28N50F	Fairchild/ON Semiconductor	MOSFET N-CH 500V 28.4A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 28.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 14.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock120,756	MOSFET (Metal Oxide)	500V	28.4A (Tc)	10V	5V @ 250µA	140nC @ 10V	5600pF @ 25V	±30V	-	310W (Tc)	160 mOhm @ 14.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FQPF6N70	Fairchild/ON Semiconductor	MOSFET N-CH 700V 3.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,824	MOSFET (Metal Oxide)	700V	3.5A (Tc)	10V	5V @ 250µA	40nC @ 10V	1400pF @ 25V	±30V	-	48W (Tc)	1.5 Ohm @ 1.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDS6162N3	Fairchild/ON Semiconductor	MOSFET N-CH 20V 21A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5521pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 21A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,984	MOSFET (Metal Oxide)	20V	21A (Ta)	2.5V, 4.5V	1.5V @ 250µA	73nC @ 4.5V	5521pF @ 10V	±12V	-	3W (Ta)	4.5 mOhm @ 21A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
R5016ANX	Rohm Semiconductor	MOSFET N-CH 500V 16A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock34,500	MOSFET (Metal Oxide)	500V	16A (Ta)	10V	4.5V @ 1mA	50nC @ 10V	1800pF @ 25V	±30V	-	50W (Tc)	270 mOhm @ 8A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
NTMFS5C404NLT3G	ON Semiconductor	MOSFET N-CH 40V 47A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 339A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12168pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 0.75 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,440	MOSFET (Metal Oxide)	40V	47A (Ta), 339A (Tc)	4.5V, 10V	2V @ 250µA	181nC @ 10V	12168pF @ 25V	±20V	-	3.2W (Ta), 167W (Tc)	0.75 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
AOB11C60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,752	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	42nC @ 10V	2000pF @ 100V	±30V	-	278W (Tc)	400 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN6R9-100YSFQ	Nexperia USA Inc.	PSMN6R9-100YSF/SOT669/LFPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,920	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP32D4S-7	Diodes Incorporated	MOSFET P-CH 30V 300MA SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 51.16pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,192	MOSFET (Metal Oxide)	30V	300mA (Ta)	4.5V, 10V	2.4V @ 250µA	1.2nC @ 10V	51.16pF @ 15V	±20V	-	370mW (Ta)	2.4 Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
TK12A50E,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 500V TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock5,760	MOSFET (Metal Oxide)	500V	12A (Ta)	10V	4V @ 1.2mA	40nC @ 10V	1300pF @ 25V	±30V	-	45W (Tc)	520 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack, Isolated Tab
IRF7855TRPBF	Infineon Technologies	MOSFET N-CH 60V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,176	MOSFET (Metal Oxide)	60V	12A (Ta)	10V	4.9V @ 100µA	39nC @ 10V	1560pF @ 25V	±20V	-	2.5W (Ta)	9.4 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STL24N60M2	STMicroelectronics	MOSFET N-CH 600V 18A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock6,976	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 250µA	29nC @ 10V	1060pF @ 100V	±25V	-	125W (Tc)	210 mOhm @ 9A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
HUF76629D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 100V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,960	MOSFET (Metal Oxide)	100V	20A (Tc)	4.5V, 10V	3V @ 250µA	46nC @ 10V	1285pF @ 25V	±16V	-	110W (Tc)	52 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
STB23NM60ND	STMicroelectronics	MOSFET N-CH 600V 19.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,368	MOSFET (Metal Oxide)	600V	19.5A (Tc)	10V	5V @ 250µA	70nC @ 10V	2050pF @ 50V	±25V	-	150W (Tc)	180 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP16NF06	STMicroelectronics	MOSFET N-CH 60V 16A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock1,161,012	MOSFET (Metal Oxide)	60V	16A (Tc)	10V	4V @ 250µA	13nC @ 10V	315pF @ 25V	±20V	-	45W (Tc)	100 mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NVTFWS012P03P8ZTAG	onsemi	PT8P PORTFOLIO EXPANSION FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	7A (Ta)	4.5V, 10V	3V @ 250µA	36 nC @ 10 V	1535 pF @ 15 V	±25V	-	860mW (Ta)	11.3mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
SI2302DDS-T1-GE3-ML	MOSLEADER	N 20V 2.9A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PMZB600UNEL315	NXP Semiconductors	NEXPERIA PMZB600UNE - SMALL SIGN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMTH8008LPS-13	Diodes Incorporated	MOSFET N-CH 80V 91A PWRDI5060-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	91A (Tc)	4.5V, 10V	2.8V @ 1mA	41.2 nC @ 10 V	2345 pF @ 40 V	±20V	-	1.5W (Ta), 100W (Tc)	7.8mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
STWA75N65DM6	STMicroelectronics	N-CHANNEL 650 V, 33 MOHM TYP., 7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 37.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: -	Stock51	MOSFET (Metal Oxide)	650 V	75A (Tc)	10V	4.75V @ 250µA	118 nC @ 10 V	5700 pF @ 100 V	±25V	-	480W (Tc)	36mOhm @ 37.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
PJQ5548V-AU_R2_002A1	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060-8 Package / Case: 8-PowerVDFN	Package: -	Stock9,000	MOSFET (Metal Oxide)	40 V	13.6A (Ta), 45A (Tc)	7V, 10V	3.5V @ 50µA	9.5 nC @ 10 V	673 pF @ 25 V	±20V	-	3.3W (Ta), 36W (Tc)	10mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN5060-8	8-PowerVDFN
MSJB14N65A-TP	Micro Commercial Co	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 139W (Tj) Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	14A (Tc)	10V	4V @ 250µA	23 nC @ 10 V	750 pF @ 300 V	±30V	-	139W (Tj)	400mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHLL110TR-GE3	Vishay Siliconix	MOSFET N-CH 100V 1.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock6,948	MOSFET (Metal Oxide)	100 V	1.5A (Tc)	4V, 5V	2V @ 250µA	6.1 nC @ 5 V	250 pF @ 25 V	±10V	-	2W (Ta), 3.1W (Tc)	540mOhm @ 900mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
STL26N30M8	STMicroelectronics	MOSFET N-CH 300V 23A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 89mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat™ (5x6) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	23A (Tc)	10V	5V @ 250µA	30.8 nC @ 10 V	1430 pF @ 100 V	±25V	-	114W (Tc)	89mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat™ (5x6)	8-PowerVDFN
SIHA6N80AE-GE3	Vishay Siliconix	MOSFET N-CH 800V 5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Stock2,508	MOSFET (Metal Oxide)	800 V	5A (Tc)	10V	4V @ 250µA	22.5 nC @ 10 V	422 pF @ 100 V	±30V	-	30W (Tc)	950mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
G36N03K	Goford Semiconductor	N30V,36A,RD<8.5M@10V,VTH1.0V~2.2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,470	MOSFET (Metal Oxide)	30 V	36A (Tc)	4.5V, 10V	2.2V @ 250µA	14 nC @ 10 V	1040 pF @ 15 V	±20V	-	31W (Tc)	8.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63