Page 515 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF1902GTRPBF
Infineon Technologies

MOSFET N-CH 20V 4.2A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock158,328
AOD452AL_008
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 25V 55A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,560
2N6766T1
Microsemi Corporation

MOSFET N-CH 200V TO-254AA

Package: TO-254-3, TO-254AA (Straight Leads)

Stock2,608
IXTF250N075T
IXYS

MOSFET N-CH 75V 140A ISOPLUS I4

Package: i4-Pac?-5

Stock3,376
HUFA75329P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 49A TO-220AB

Package: TO-220-3

Stock5,120
BSC0501NSIATMA1
Infineon Technologies

MOSFET N-CH 30V 29A 8TDSON

Package: 8-PowerTDFN

Stock2,144
AOT412
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 60A TO-220

Package: TO-220-3

Stock131,640
BUK6E2R3-40C,127
Nexperia USA Inc.

MOSFET N-CH 40V 120A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock23,052
IRL8113PBF
Infineon Technologies

MOSFET N-CH 30V 105A TO-220AB

Package: TO-220-3

Stock121,248
IRF8304MTRPBF
Infineon Technologies

MOSFET N-CH 30V 28A MX

Package: DirectFET? Isometric MX

Stock3,536
IRF6217TRPBF
Infineon Technologies

MOSFET P-CH 150V 0.7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock53,052
TPN1R603PL,L1Q
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

Package: 8-PowerVDFN

Stock3,152
STL23NS3LLH7
STMicroelectronics

MOSFET N-CH 30V 92A PWRFLAT8

Package: 8-PowerVDFN

Stock2,384
TPH4R606NH,L1Q
Toshiba Semiconductor and Storage

MOSFET N CH 60V 32A 8-SOP ADV

Package: 8-PowerVDFN

Stock46,470
FDD390N15ALZ
Fairchild/ON Semiconductor

MOSFET N-CH 150V 26A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock21,894
ZXMN2A01FTA
Diodes Incorporated

MOSFET N-CH 20V 1.9A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock3,260,748
IRFI630BTU
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
DMPH4013SK3Q-13
Diodes Incorporated

MOSFET P-CH 40V 55A TO252 T&R

Package: -

Stock13,503
SQJA76EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 75A PPAK SO-8

Package: -

Request a Quote
NXV65UPR
Nexperia USA Inc.

NXV65UP/SOT23/TO-236AB

Package: -

Stock151,395

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF1902GTRPBF	Infineon Technologies	MOSFET N-CH 20V 4.2A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 85 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock158,328	MOSFET (Metal Oxide)	20V	4.2A (Ta)	-	700mV @ 250µA	7.5nC @ 4.5V	310pF @ 15V	-	-	-	85 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AOD452AL_008	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 25V 55A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 12.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,560	MOSFET (Metal Oxide)	25V	55A (Tc)	4.5V, 10V	3V @ 250µA	26nC @ 10V	1450pF @ 12.5V	±20V	-	2.5W (Ta), 50W (Tc)	8 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
2N6766T1	Microsemi Corporation	MOSFET N-CH 200V TO-254AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock2,608	MOSFET (Metal Oxide)	200V	30A (Tc)	10V	4V @ 250µA	115nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	90 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
IXTF250N075T	IXYS	MOSFET N-CH 75V 140A ISOPLUS I4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC? Package / Case: i4-Pac?-5	Package: i4-Pac?-5	Stock3,376	MOSFET (Metal Oxide)	75V	140A (Tc)	10V	4V @ 250µA	200nC @ 10V	9900pF @ 25V	±20V	-	200W (Tc)	4.4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS i4-PAC?	i4-Pac?-5
HUFA75329P3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 49A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 49A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,120	MOSFET (Metal Oxide)	55V	49A (Tc)	10V	4V @ 250µA	75nC @ 20V	1060pF @ 25V	±20V	-	128W (Tc)	24 mOhm @ 49A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BSC0501NSIATMA1	Infineon Technologies	MOSFET N-CH 30V 29A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,144	MOSFET (Metal Oxide)	30V	29A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	33nC @ 10V	2200pF @ 15V	±20V	Schottky Diode (Body)	2.5W (Ta), 50W (Tc)	1.9 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
AOT412	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.6W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock131,640	MOSFET (Metal Oxide)	100V	8.2A (Ta), 60A (Tc)	7V, 10V	3.8V @ 250µA	54nC @ 10V	3220pF @ 50V	±25V	-	2.6W (Ta), 150W (Tc)	15.8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
BUK6E2R3-40C,127	Nexperia USA Inc.	MOSFET N-CH 40V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15100pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock23,052	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	2.8V @ 1mA	260nC @ 10V	15100pF @ 25V	±16V	-	306W (Tc)	2.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRL8113PBF	Infineon Technologies	MOSFET N-CH 30V 105A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock121,248	MOSFET (Metal Oxide)	30V	105A (Tc)	4.5V, 10V	2.25V @ 250µA	35nC @ 4.5V	2840pF @ 15V	±20V	-	110W (Tc)	6 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF8304MTRPBF	Infineon Technologies	MOSFET N-CH 30V 28A MX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 28A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock3,536	MOSFET (Metal Oxide)	30V	28A (Ta), 170A (Tc)	4.5V, 10V	2.35V @ 100µA	42nC @ 4.5V	4700pF @ 15V	±20V	-	2.8W (Ta), 100W (Tc)	2.2 mOhm @ 28A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF6217TRPBF	Infineon Technologies	MOSFET P-CH 150V 0.7A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 420mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock53,052	MOSFET (Metal Oxide)	150V	700mA (Ta)	10V	5V @ 250µA	9nC @ 10V	150pF @ 25V	±20V	-	2.5W (Ta)	2.4 Ohm @ 420mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
TPN1R603PL,L1Q	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 10V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 80A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,152	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	10V @ 10µA	41nC @ 10V	3900pF @ 15V	±20V	-	104W (Tc)	1.2 mOhm @ 80A, 10V	175°C (TJ)	Surface Mount	8-TSON Advance (3.3x3.3)	8-PowerVDFN
STL23NS3LLH7	STMicroelectronics	MOSFET N-CH 30V 92A PWRFLAT8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock2,384	MOSFET (Metal Oxide)	30V	92A (Tc)	4.5V, 10V	2.3V @ 1mA	13.7nC @ 4.5V	2100pF @ 15V	±20V	-	2.9W (Ta), 50W (Tc)	3.7 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (3.3x3.3)	8-PowerVDFN
TPH4R606NH,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 60V 32A 8-SOP ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs(th) (Max) @ Id: 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 16A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock46,470	MOSFET (Metal Oxide)	60V	32A (Ta)	6.5V, 10V	4V @ 500µA	49nC @ 10V	3965pF @ 30V	±20V	-	1.6W (Ta), 63W (Tc)	4.6 mOhm @ 16A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
FDD390N15ALZ	Fairchild/ON Semiconductor	MOSFET N-CH 150V 26A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock21,894	MOSFET (Metal Oxide)	150V	26A (Tc)	4.5V, 10V	2.8V @ 250µA	39nC @ 10V	1760pF @ 75V	±20V	-	63W (Tc)	42 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
ZXMN2A01FTA	Diodes Incorporated	MOSFET N-CH 20V 1.9A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 303pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,260,748	MOSFET (Metal Oxide)	20V	1.9A (Ta)	2.5V, 4.5V	700mV @ 250µA	3nC @ 4.5V	303pF @ 15V	±12V	-	625mW (Ta)	120 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IRFI630BTU	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 72W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 (I2PAK) Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	9A (Tc)	10V	4V @ 250µA	29 nC @ 10 V	720 pF @ 25 V	±30V	-	3.13W (Ta), 72W (Tc)	400mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262 (I2PAK)	TO-262-3 Long Leads, I2PAK, TO-262AA
DMPH4013SK3Q-13	Diodes Incorporated	MOSFET P-CH 40V 55A TO252 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock13,503	MOSFET (Metal Oxide)	40 V	55A (Tc)	4.5V, 10V	3V @ 250µA	67 nC @ 10 V	4004 pF @ 20 V	±20V	-	2.1W (Ta)	15mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SQJA76EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 75A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	75A (Tc)	10V	3.5V @ 250µA	100 nC @ 10 V	5250 pF @ 25 V	±20V	-	68W (Tc)	2.4mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
NXV65UPR	Nexperia USA Inc.	NXV65UP/SOT23/TO-236AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 340mW (Ta), 2.1W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock151,395	MOSFET (Metal Oxide)	20 V	2.1A (Ta)	1.8V, 4.5V	1V @ 250µA	8.7 nC @ 4.5 V	458 pF @ 10 V	±8V	-	340mW (Ta), 2.1W (Tc)	70mOhm @ 2.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
FQB46N15TM	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 45.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 210W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 22.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	45.6A (Tc)	10V	4V @ 250µA	110 nC @ 10 V	3250 pF @ 25 V	±25V	-	3.75W (Ta), 210W (Tc)	42mOhm @ 22.8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FDS4435BZ-F085	onsemi	MOSFET P-CH 30V 8.8A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1845 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	8.8A (Ta)	4.5V, 10V	3V @ 250µA	40 nC @ 10 V	1845 pF @ 15 V	±25V	-	2.5W (Ta)	20mOhm @ 8.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
BSS123K-TP	Micro Commercial Co	MOSFET N-CH 100V 170MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 170mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW Rds On (Max) @ Id, Vgs: 6Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock128,595	MOSFET (Metal Oxide)	100 V	170mA (Tj)	4.5V, 10V	2.5V @ 250µA	2 nC @ 10 V	60 pF @ 25 V	±20V	-	350mW	6Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
AOK065V65X2	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 40.3A TO247 FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 58.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 400 V Vgs (Max): +15V, -5V FET Feature: - Power Dissipation (Max): 187.5W (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	650 V	40.3A (Tc)	15V	3.5V @ 10mA	58.8 nC @ 15 V	1762 pF @ 400 V	+15V, -5V	-	187.5W (Ta)	85mOhm @ 10A, 15V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
UF3C065040T3S	Qorvo	MOSFET N-CH 650V 54A TO220-3 FET Type: N-Channel Technology: - Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 326W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock1,050	-	650 V	54A (Tc)	12V	6V @ 10mA	51 nC @ 15 V	1500 pF @ 100 V	±25V	-	326W (Tc)	52mOhm @ 40A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
AOSP66919	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	16A (Ta)	4.5V, 10V	2.6V @ 250µA	66 nC @ 10 V	3420 pF @ 50 V	±20V	-	3.1W (Ta)	6.5mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
TPCP8107-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 8A PS-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: PS-8 Package / Case: 8-SMD, Flat Lead	Package: -	Stock11,598	MOSFET (Metal Oxide)	40 V	8A (Ta)	6V, 10V	3V @ 1mA	44.6 nC @ 10 V	2160 pF @ 10 V	+10V, -20V	-	1W (Ta)	18mOhm @ 4A, 10V	175°C	Surface Mount	PS-8	8-SMD, Flat Lead
GT130N10F	Goford Semiconductor	MOSFET N-CH 100V 45A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 41.7W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	45A (Tc)	10V	4V @ 250µA	18 nC @ 10 V	1215 pF @ 50 V	±20V	-	41.7W (Tc)	12mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack