Page 529 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BUZ73A H
Infineon Technologies

MOSFET N-CH 200V 5.5A TO220-3

Package: TO-220-3

Stock426,132
IPB80N06S2L05ATMA1
Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,864
SPP20N60S5
Infineon Technologies

MOSFET N-CH 650V 20A TO-220AB

Package: TO-220-3

Stock789,084
AOB411L_001
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 60V 8A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,016
GP2M008A060FGH
Global Power Technologies Group

MOSFET N-CH 600V 7.5A TO220F

Package: TO-220-3 Full Pack

Stock2,752
AOT424
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 110A TO220

Package: TO-220-3

Stock179,124
PHB176NQ04T,118
NXP

MOSFET N-CH 40V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,200
SIPC26N50C3X1SA2
Infineon Technologies

TRANSISTOR N-CH

Package: -

Stock3,328
IRLU024
Vishay Siliconix

MOSFET N-CH 60V 14A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock506,544
NVMFS5C450NWFAFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock3,328
AON7292
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 23A 8DFN

Package: 8-PowerWDFN

Stock3,040
NTMFS4C59NT1G
ON Semiconductor

MOSFET N-CH 30V 52A SO8FL

Package: 8-PowerTDFN

Stock14,340
BUK6212-40C,118
Nexperia USA Inc.

MOSFET N-CH 40V 50A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock46,494
NDUL09N150CG
ON Semiconductor

MOSFET N-CH 1500V 9A TO3PF-3

Package: TO-3P-3 Full Pack

Stock7,648
STS5PF30L
STMicroelectronics

MOSFET P-CH 30V 5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,058,064
HUF76639P3
onsemi

MOSFET N-CH 100V 51A TO220-3

Package: -

Request a Quote
PJQ4443P_R2_00001
Panjit International Inc.

40V P-CHANNEL ENHANCEMENT MODE M

Package: -

Stock49,377
IGOT60R070D1AUMA1
Infineon Technologies

GANFET N-CH 600V 31A 20DSO

Package: -

Request a Quote
BSS84-G
onsemi

FET -50V 10.0 MOHM SOT23

Package: -

Request a Quote
NVH4L030N120M3S
onsemi

SILICON CARBIDE (SIC) MOSFET-ELI

Package: -

Stock1,290

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BUZ73A H	Infineon Technologies	MOSFET N-CH 200V 5.5A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock426,132	MOSFET (Metal Oxide)	200V	5.5A (Tc)	10V	4V @ 1mA	-	530pF @ 25V	±20V	-	40W (Tc)	600 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPB80N06S2L05ATMA1	Infineon Technologies	MOSFET N-CH 55V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,864	MOSFET (Metal Oxide)	55V	80A (Tc)	4.5V, 10V	2V @ 250µA	230nC @ 10V	5700pF @ 25V	±20V	-	300W (Tc)	4.5 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPP20N60S5	Infineon Technologies	MOSFET N-CH 650V 20A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock789,084	MOSFET (Metal Oxide)	650V	20A (Tc)	10V	5.5V @ 1mA	103nC @ 10V	3000pF @ 25V	±20V	-	208W (Tc)	190 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
AOB411L_001	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 60V 8A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 187W (Tc) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,016	MOSFET (Metal Oxide)	60V	8A (Ta), 78A (Tc)	4.5V, 10V	2.5V @ 250µA	100nC @ 10V	6400pF @ 30V	±20V	-	187W (Tc)	16.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
GP2M008A060FGH	Global Power Technologies Group	MOSFET N-CH 600V 7.5A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,752	MOSFET (Metal Oxide)	600V	7.5A (Tc)	10V	5V @ 250µA	23nC @ 10V	1063pF @ 25V	±30V	-	39W (Tc)	1.2 Ohm @ 3.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
AOT424	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 110A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock179,124	MOSFET (Metal Oxide)	30V	110A (Tc)	4.5V, 10V	3V @ 250µA	72nC @ 10V	4400pF @ 15V	±20V	-	100W (Tc)	4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
PHB176NQ04T,118	NXP	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 68.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,200	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	68.9nC @ 10V	3620pF @ 25V	±20V	-	250W (Tc)	4.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIPC26N50C3X1SA2	Infineon Technologies	TRANSISTOR N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,328	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLU024	Vishay Siliconix	MOSFET N-CH 60V 14A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock506,544	MOSFET (Metal Oxide)	60V	14A (Tc)	4V, 5V	2V @ 250µA	18nC @ 5V	870pF @ 25V	±10V	-	2.5W (Ta), 42W (Tc)	100 mOhm @ 8.4A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
NVMFS5C450NWFAFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 65µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,328	MOSFET (Metal Oxide)	40V	24A (Ta), 102A (Tc)	10V	3.5V @ 65µA	23nC @ 10V	1600pF @ 25V	±20V	-	3.6W (Ta), 68W (Tc)	3.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
AON7292	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 23A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.1W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,040	MOSFET (Metal Oxide)	100V	9A (Ta), 23A (Tc)	4.5V, 10V	2.6V @ 250µA	25nC @ 10V	1170pF @ 50V	±20V	-	4.1W (Ta), 28W (Tc)	24 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3.3x3.3)	8-PowerWDFN
NTMFS4C59NT1G	ON Semiconductor	MOSFET N-CH 30V 52A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 30A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock14,340	MOSFET (Metal Oxide)	30V	9A (Ta), 52A (Tc)	4.5V, 10V	2.1V @ 250µA	22.2nC @ 10V	1252pF @ 15V	±20V	-	-	5.8 mOhm @ 30A, 10V	-	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
BUK6212-40C,118	Nexperia USA Inc.	MOSFET N-CH 40V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock46,494	MOSFET (Metal Oxide)	40V	50A (Tc)	10V	2.8V @ 1mA	33.9nC @ 10V	1900pF @ 25V	±16V	-	80W (Tc)	11.2 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NDUL09N150CG	ON Semiconductor	MOSFET N-CH 1500V 9A TO3PF-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2025pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: - Supplier Device Package: TO-3PF-3 Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock7,648	MOSFET (Metal Oxide)	1500V	9A (Ta)	10V	4V @ 1mA	114nC @ 10V	2025pF @ 30V	±30V	-	3W (Ta), 78W (Tc)	3 Ohm @ 3A, 10V	150°C (TJ)	-	TO-3PF-3	TO-3P-3 Full Pack
STS5PF30L	STMicroelectronics	MOSFET P-CH 30V 5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,058,064	MOSFET (Metal Oxide)	30V	5A (Tc)	4.5V, 10V	2.5V @ 250µA	16nC @ 5V	1350pF @ 25V	±16V	-	2.5W (Tc)	55 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
HUF76639P3	onsemi	MOSFET N-CH 100V 51A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	51A (Tc)	-	3V @ 250µA	86 nC @ 10 V	2400 pF @ 25 V	-	-	-	26mOhm @ 51A, 10V	-	Through Hole	TO-220-3	TO-220-3
PJQ4443P_R2_00001	Panjit International Inc.	40V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock49,377	MOSFET (Metal Oxide)	40 V	8.8A (Ta), 46A (Tc)	4.5V, 10V	2.5V @ 250µA	23 nC @ 4.5 V	2767 pF @ 25 V	±20V	-	2.1W (Ta), 59.5W (Tc)	12mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN3333-8	8-PowerVDFN
IGOT60R070D1AUMA1	Infineon Technologies	GANFET N-CH 600V 31A 20DSO FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-20-87 Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)	Package: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	1.6V @ 2.6mA	-	380 pF @ 400 V	-10V	-	125W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-20-87	20-PowerSOIC (0.433", 11.00mm Width)
BSS84-G	onsemi	FET -50V 10.0 MOHM SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 34µA Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	130mA (Ta)	5V	2V @ 34µA	1.3 nC @ 5 V	73 pF @ 25 V	±20V	-	360mW (Ta)	10Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NVH4L030N120M3S	onsemi	SILICON CARBIDE (SIC) MOSFET-ELI FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.4V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock1,290	SiC (Silicon Carbide Junction Transistor)	1200 V	73A (Tc)	18V	4.4V @ 15mA	107 nC @ 18 V	2430 pF @ 800 V	+22V, -10V	-	313W (Tc)	39mOhm @ 30A, 18V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
DMJ65H430SCTI	Diodes Incorporated	MOSFET BVDSS: 501V~650V ITO-220A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO220AB-N (Type HE) Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	14A (Tc)	10V	5V @ 250µA	24.5 nC @ 10 V	775 pF @ 100 V	±30V	-	2.5W (Ta), 50W (Tc)	430mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO220AB-N (Type HE)	TO-220-3 Full Pack, Isolated Tab
RJK03D2DPA-00-J5A	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
G030N06M	Goford Semiconductor	MOSFET N-CH 60V 223A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 223A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 12432 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,400	MOSFET (Metal Oxide)	60 V	223A (Tc)	4.5V, 10V	2.5V @ 250µA	101 nC @ 4.5 V	12432 pF @ 30 V	±20V	-	240W (Tc)	3mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NVD6416ANLT4G-001-VF01	onsemi	MOSFET N-CH 100V 19A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	19A (Tc)	4.5V, 10V	2.2V @ 250µA	40 nC @ 10 V	1000 pF @ 25 V	±20V	-	71W (Tc)	74mOhm @ 19A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
TPH1R306P1-L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 100A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: -	Stock24,423	MOSFET (Metal Oxide)	60 V	100A (Tc)	4.5V, 10V	2.5V @ 1mA	91 nC @ 10 V	8100 pF @ 30 V	±20V	-	960mW (Ta), 170W (Tc)	1.28mOhm @ 50A, 10V	175°C	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
DMN24H11DSQ-13	Diodes Incorporated	MOSFET N-CH 240V 270MA SOT23 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240 V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 76.8 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 11Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock30,000	MOSFET (Metal Oxide)	240 V	270mA (Ta)	4.5V, 10V	3V @ 250µA	3.7 nC @ 10 V	76.8 pF @ 25 V	±20V	-	750mW (Ta)	11Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SUD09P10-195-BE3	Vishay Siliconix	MOSFET P-CH 100V 8.8A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,653	MOSFET (Metal Oxide)	100 V	8.8A (Tc)	4.5V, 10V	2.5V @ 250µA	34.8 nC @ 10 V	1055 pF @ 50 V	±20V	-	2.5W (Ta), 32.1W (Tc)	195mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IMBG120R090M1HXTMA1	Infineon Technologies	SICFET N-CH 1.2KV 26A TO263 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5.7V @ 3.7mA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V Vgs (Max): +18V, -15V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock4,968	SiCFET (Silicon Carbide)	1200 V	26A (Tc)	-	5.7V @ 3.7mA	23 nC @ 18 V	763 pF @ 800 V	+18V, -15V	-	136W (Tc)	125mOhm @ 8.5A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA