Page 530 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFS7762PBF
Infineon Technologies

MOSFET N-CH 75V 104A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,560
IRF6621TR1
Infineon Technologies

MOSFET N-CH 30V 12A DIRECTFET

Package: DirectFET? Isometric SQ

Stock99,876
CPH6341-TL-EX
ON Semiconductor

MOSFET P-CH 30V 5A SOT23-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,424
SI4362BDY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 29A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock426,624
FDP15N65
Fairchild/ON Semiconductor

MOSFET N-CH 650V 15A TO-220

Package: TO-220-3

Stock9,252
SI5482DU-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 12A PPAK CHIPFET

Package: PowerPAK? ChipFET? Single

Stock3,200
FDMS8672S
Fairchild/ON Semiconductor

MOSFET N-CH 30V 17A POWER56

Package: 8-PowerTDFN

Stock198,708
STD60NH03L-1
STMicroelectronics

MOSFET N-CH 30V 60A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,944
IRF7455
Infineon Technologies

MOSFET N-CH 30V 15A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock16,896
TK12A53D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 525V 12A TO-220SIS

Package: TO-220-3 Full Pack

Stock7,808
APT22F100J
Microsemi Corporation

MOSFET N-CH 1000V 23A SOT-227

Package: SOT-227-4, miniBLOC

Stock3,840
2N7002-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 115MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,528
STWA40N95DK5
STMicroelectronics

MOSFET N-CH 950V 38A TO247

Package: TO-247-3

Stock6,276
IRFS4310ZPBF
Infineon Technologies

MOSFET N-CH 100V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock401,484
DMTH6004SPSQ-13
Diodes Incorporated

MOSFET N-CH 60V 100A PWRDI5060-8

Package: 8-PowerTDFN

Stock6,032
GA03JT12-247
GeneSiC Semiconductor

TRANS SJT 1200V 3A TO-247AB

Package: TO-247-3

Stock7,620
SM2302NSAC-TRG-ML
MOSLEADER

N 20V 6A SOT-23

Package: -

Request a Quote
TSM150P03PQ33
Taiwan Semiconductor Corporation

-30, -36, SINGLE P-CHANNEL

Package: -

Request a Quote
FDU6696
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
HAT2198WP-EL-E
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFS7762PBF	Infineon Technologies	MOSFET N-CH 75V 104A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 51A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,560	MOSFET (Metal Oxide)	75V	85A (Tc)	6V, 10V	3.7V @ 100µA	130nC @ 10V	4440pF @ 25V	±20V	-	140W (Tc)	6.7 mOhm @ 51A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF6621TR1	Infineon Technologies	MOSFET N-CH 30V 12A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 12A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SQ Package / Case: DirectFET? Isometric SQ	Package: DirectFET? Isometric SQ	Stock99,876	MOSFET (Metal Oxide)	30V	12A (Ta), 55A (Tc)	4.5V, 10V	2.25V @ 250µA	17.5nC @ 4.5V	1460pF @ 15V	±20V	-	2.2W (Ta), 42W (Tc)	9.1 mOhm @ 12A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SQ	DirectFET? Isometric SQ
CPH6341-TL-EX	ON Semiconductor	MOSFET P-CH 30V 5A SOT23-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 59 mOhm @ 3A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 6-CPH Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,424	MOSFET (Metal Oxide)	30V	5A (Ta)	4V, 10V	-	10nC @ 10V	430pF @ 10V	±20V	-	1.6W (Ta)	59 mOhm @ 3A, 10V	150°C	Surface Mount	6-CPH	SOT-23-6 Thin, TSOT-23-6
SI4362BDY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 29A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3W (Ta), 6.6W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 19.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock426,624	MOSFET (Metal Oxide)	30V	29A (Tc)	4.5V, 10V	2V @ 250µA	115nC @ 10V	4800pF @ 15V	±12V	-	3W (Ta), 6.6W (Tc)	4.6 mOhm @ 19.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDP15N65	Fairchild/ON Semiconductor	MOSFET N-CH 650V 15A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3095pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock9,252	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	5V @ 250µA	63nC @ 10V	3095pF @ 25V	±30V	-	250W (Tc)	440 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
SI5482DU-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 12A PPAK CHIPFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? ChipFet Single Package / Case: PowerPAK? ChipFET? Single	Package: PowerPAK? ChipFET? Single	Stock3,200	MOSFET (Metal Oxide)	30V	12A (Tc)	4.5V, 10V	2V @ 250µA	51nC @ 10V	1610pF @ 15V	±12V	-	3.1W (Ta), 31W (Tc)	15 mOhm @ 7.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFet Single	PowerPAK? ChipFET? Single
FDMS8672S	Fairchild/ON Semiconductor	MOSFET N-CH 30V 17A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2515pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock198,708	MOSFET (Metal Oxide)	30V	17A (Ta), 35A (Tc)	4.5V, 10V	3V @ 1mA	47nC @ 10V	2515pF @ 15V	±20V	-	2.5W (Ta), 50W (Tc)	5 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
STD60NH03L-1	STMicroelectronics	MOSFET N-CH 30V 60A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,944	MOSFET (Metal Oxide)	30V	60A (Tc)	5V, 10V	1V @ 250µA	21nC @ 5V	2200pF @ 25V	±20V	-	70W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRF7455	Infineon Technologies	MOSFET N-CH 30V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 25V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock16,896	MOSFET (Metal Oxide)	30V	15A (Ta)	2.8V, 10V	2V @ 250µA	56nC @ 5V	3480pF @ 25V	±12V	-	2.5W (Ta)	7.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
TK12A53D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 525V 12A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 580 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,808	MOSFET (Metal Oxide)	525V	12A (Ta)	10V	4V @ 1mA	25nC @ 10V	1350pF @ 25V	±30V	-	45W (Tc)	580 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
APT22F100J	Microsemi Corporation	MOSFET N-CH 1000V 23A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 23A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 545W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,840	MOSFET (Metal Oxide)	1000V	23A	10V	-	305nC @ 10V	9835pF @ 25V	±30V	-	545W (Tc)	380 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
2N7002-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 115MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,528	MOSFET (Metal Oxide)	60V	115mA (Ta)	5V, 10V	2.5V @ 250µA	-	50pF @ 25V	±20V	-	200mW (Ta)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236	TO-236-3, SC-59, SOT-23-3
STWA40N95DK5	STMicroelectronics	MOSFET N-CH 950V 38A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock6,276	MOSFET (Metal Oxide)	950V	38A (Tc)	10V	5V @ 100µA	100nC @ 10V	3480pF @ 100V	±30V	-	450W (Tc)	130 mOhm @ 19A, 10V	-55°C ~ 150°C	Through Hole	TO-247 Long Leads	TO-247-3
IRFS4310ZPBF	Infineon Technologies	MOSFET N-CH 100V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock401,484	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	4V @ 150µA	170nC @ 10V	6860pF @ 50V	±20V	-	250W (Tc)	6 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMTH6004SPSQ-13	Diodes Incorporated	MOSFET N-CH 60V 100A PWRDI5060-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4556pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,032	MOSFET (Metal Oxide)	60V	25A (Ta), 100A (Tc)	10V	4V @ 250µA	95.4nC @ 10V	4556pF @ 30V	±20V	-	2.1W (Ta), 167W (Tc)	3.1 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
GA03JT12-247	GeneSiC Semiconductor	TRANS SJT 1200V 3A TO-247AB FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) (95°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 460 mOhm @ 3A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	Package: TO-247-3	Stock7,620	SiC (Silicon Carbide Junction Transistor)	1200V	3A (Tc) (95°C)	-	-	-	-	-	-	15W (Tc)	460 mOhm @ 3A	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
SM2302NSAC-TRG-ML	MOSLEADER	N 20V 6A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TSM150P03PQ33	Taiwan Semiconductor Corporation	-30, -36, SINGLE P-CHANNEL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 27.8W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3.1x3.1) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A (Ta), 36A (Tc)	4.5V, 10V	2.5V @ 250µA	29.3 nC @ 10 V	1829 pF @ 15 V	±20V	-	2.3W (Ta), 27.8W (Tc)	15mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (3.1x3.1)	8-PowerWDFN
FDU6696	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1715 pF @ 15 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	13A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	24 nC @ 5 V	1715 pF @ 15 V	±16V	-	1.6W (Ta), 52W (Tc)	8mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
HAT2198WP-EL-E	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIR186LDP-T1-RE3	Vishay Siliconix	N-CHANNEL 60-V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 23.8A (Ta), 80.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock28,020	MOSFET (Metal Oxide)	60 V	23.8A (Ta), 80.3A (Tc)	4.5V, 10V	2.5V @ 250µA	48 nC @ 10 V	1980 pF @ 30 V	±20V	-	5W (Ta), 57W (Tc)	4.4mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IPB065N03LGATMA1	Infineon Technologies	MOSFET N-CH 30V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	2.2V @ 250µA	23 nC @ 10 V	2400 pF @ 15 V	±20V	-	56W (Tc)	6.5mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STB24N60M6	STMicroelectronics	MOSFET N-CH 600V D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,100	MOSFET (Metal Oxide)	600 V	17A (Tc)	10V	4.75V @ 250µA	23 nC @ 10 V	960 pF @ 100 V	±25V	-	130W (Tc)	190mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PJE8405_R1_00001	Panjit International Inc.	30V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Stock11,844	MOSFET (Metal Oxide)	30 V	500mA (Ta)	1.8V, 4.5V	1.3V @ 250µA	1.6 nC @ 4.5 V	137 pF @ 15 V	±8V	-	300mW (Ta)	390mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
MCH3415-TL-E	onsemi	NCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCU110N06YA-TP	Micro Commercial Co	N-CHANNEL MOSFET,DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 89W Rds On (Max) @ Id, Vgs: 4.4mOhm @ 55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock14,574	MOSFET (Metal Oxide)	60 V	110A (Tc)	4.5V, 10V	2.5V @ 250µA	90 nC @ 10 V	5450 pF @ 30 V	±20V	-	89W	4.4mOhm @ 55A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
TPHR7404PU-L1Q-M	Toshiba Semiconductor and Storage	40V UMOS9 S 0.65MOHM SOP-ADV(N) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 400A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 210W (Tc) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 50A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	400A (Ta), 150A (Tc)	6V, 10V	3V @ 1mA	98 nC @ 10 V	9000 pF @ 20 V	±20V	-	3W (Ta), 210W (Tc)	0.74mOhm @ 50A, 10V	175°C	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
SUD40151EL-GE3	Vishay Siliconix	MOSFET P-CH 40V 42A TO252AA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock9,237	MOSFET (Metal Oxide)	40 V	42A (Tc)	4.5V, 10V	2.5V @ 250µA	112 nC @ 10 V	5340 pF @ 20 V	±20V	-	50W (Tc)	12mOhm @ 17.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63