Page 591 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPB80N06S2L-11
Infineon Technologies

MOSFET N-CH 55V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock33,924
SUP40N10-30-GE3
Vishay Siliconix

MOSFET N-CH 100V 38.5A TO220AB

Package: TO-220-3

Stock119,400
FQD8P10TM_F080
Fairchild/ON Semiconductor

MOSFET P-CH 100V 6.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,960
NTD20N03L27
ON Semiconductor

MOSFET N-CH 30V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,216
IRFI710G
Vishay Siliconix

MOSFET N-CH 400V 1.6A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock5,584
APT60M75L2FLLG
Microsemi Corporation

MOSFET N-CH 600V 73A TO-264MAX

Package: TO-264-3, TO-264AA

Stock3,840
IXFK80N20
IXYS

MOSFET N-CH 200V 80A TO-264AA

Package: TO-264-3, TO-264AA

Stock3,632
IRFP360PBF
Vishay Siliconix

MOSFET N-CH 400V 23A TO-247AC

Package: TO-247-3

Stock13,236
AON6796
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 32A DFN

Package: 8-PowerSMD, Flat Leads

Stock5,280
RQ3E130MNTB1
Rohm Semiconductor

MOSFET N-CH 30V 13A HSMT8

Package: 8-PowerVDFN

Stock50,544
BSP296NH6327XTSA1
Infineon Technologies

MOSFET N-CH 100V 1.2A SOT-223

Package: TO-261-4, TO-261AA

Stock41,988
2N7002A-7
Diodes Incorporated

MOSFET N-CH 60V 0.18A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock21,804,780
STP200NF04
STMicroelectronics

MOSFET N-CH 40V 120A TO-220

Package: TO-220-3

Stock410,688
DMP31D7LWQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT323 T&R

Package: -

Request a Quote
SQ3418EEV-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 8A 6TSOP

Package: -

Request a Quote
TP65H070G4LSG-TR
Transphorm

GANFET N-CH 650V 29A QFN8X8

Package: -

Stock8,118
IPW60R070CFD7XKSA1
Infineon Technologies

MOSFET N-CH 650V 31A TO247-3

Package: -

Stock3,291
FDB8442-F085
onsemi

MOSFET N-CH 40V 28A TO263AB

Package: -

Request a Quote
RS6R060BHTB1
Rohm Semiconductor

NCH 150V 60A, HSOP8, POWER MOSFE

Package: -

Stock14,625
NTMFS5C612NLT1G-UIL5
onsemi

MOSFET N-CH 60V 36A/235A 5DFN

Package: -

Stock4,425

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPB80N06S2L-11	Infineon Technologies	MOSFET N-CH 55V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock33,924	MOSFET (Metal Oxide)	55V	80A (Tc)	4.5V, 10V	2V @ 93µA	80nC @ 10V	2650pF @ 25V	±20V	-	158W (Tc)	11 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUP40N10-30-GE3	Vishay Siliconix	MOSFET N-CH 100V 38.5A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 38.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock119,400	MOSFET (Metal Oxide)	100V	38.5A (Tc)	6V, 10V	4V @ 250µA	60nC @ 10V	2400pF @ 25V	±20V	-	3.1W (Ta), 89W (Tc)	30 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQD8P10TM_F080	Fairchild/ON Semiconductor	MOSFET P-CH 100V 6.6A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,960	MOSFET (Metal Oxide)	100V	6.6A (Tc)	10V	4V @ 250µA	15nC @ 10V	470pF @ 25V	±30V	-	2.5W (Ta), 44W (Tc)	530 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD20N03L27	ON Semiconductor	MOSFET N-CH 30V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,216	MOSFET (Metal Oxide)	30V	20A (Ta)	4V, 5V	2V @ 250µA	18.9nC @ 10V	1260pF @ 25V	±20V	-	1.75W (Ta), 74W (Tc)	27 mOhm @ 10A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFI710G	Vishay Siliconix	MOSFET N-CH 400V 1.6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock5,584	MOSFET (Metal Oxide)	400V	1.6A (Ta)	-	4V @ 250µA	-	-	-	-	-	-	-	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
APT60M75L2FLLG	Microsemi Corporation	MOSFET N-CH 600V 73A TO-264MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 893W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 36.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 264 MAX? [L2] Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,840	MOSFET (Metal Oxide)	600V	73A (Tc)	10V	5V @ 5mA	195nC @ 10V	8930pF @ 25V	±30V	-	893W (Tc)	75 mOhm @ 36.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	264 MAX? [L2]	TO-264-3, TO-264AA
IXFK80N20	IXYS	MOSFET N-CH 200V 80A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,632	MOSFET (Metal Oxide)	200V	80A (Tc)	10V	4V @ 4mA	280nC @ 10V	5900pF @ 25V	±20V	-	360W (Tc)	30 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IRFP360PBF	Vishay Siliconix	MOSFET N-CH 400V 23A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock13,236	MOSFET (Metal Oxide)	400V	23A (Tc)	10V	4V @ 250µA	210nC @ 10V	4500pF @ 25V	±20V	-	280W (Tc)	200 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
AON6796	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 32A DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock5,280	MOSFET (Metal Oxide)	30V	32A (Ta), 70A (Tc)	4.5V, 10V	1.9V @ 250µA	23nC @ 10V	1350pF @ 15V	±12V	-	6.2W (Ta), 31W (Tc)	3.9 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
RQ3E130MNTB1	Rohm Semiconductor	MOSFET N-CH 30V 13A HSMT8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 13A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock50,544	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	2.5V @ 1mA	14nC @ 10V	840pF @ 15V	±20V	-	2W (Ta)	8.1 mOhm @ 13A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
BSP296NH6327XTSA1	Infineon Technologies	MOSFET N-CH 100V 1.2A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 152.7pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock41,988	MOSFET (Metal Oxide)	100V	1.2A (Ta)	4.5V, 10V	1.8V @ 100µA	6.7nC @ 10V	152.7pF @ 25V	±20V	-	1.8W (Ta)	600 mOhm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
2N7002A-7	Diodes Incorporated	MOSFET N-CH 60V 0.18A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 115mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock21,804,780	MOSFET (Metal Oxide)	60V	180mA (Ta)	5V, 10V	2V @ 250µA	-	23pF @ 25V	±20V	-	370mW (Ta)	6 Ohm @ 115mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
STP200NF04	STMicroelectronics	MOSFET N-CH 40V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock410,688	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 250µA	210nC @ 10V	5100pF @ 25V	±20V	-	310W (Tc)	3.7 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
DMP31D7LWQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT323 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 290mW Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	380mA (Ta)	4.5V, 10V	2.6V @ 250µA	0.36 nC @ 10 V	19 pF @ 15 V	±20V	-	290mW	900mOhm @ 420mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
SQ3418EEV-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 8A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	8A (Tc)	-	2.5V @ 250µA	11 nC @ 4.5 V	660 pF @ 25 V	-	-	-	32mOhm @ 5A, 10V	-	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
TP65H070G4LSG-TR	Transphorm	GANFET N-CH 650V 29A QFN8X8 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PQFN (8x8) Package / Case: 3-PowerTDFN	Package: -	Stock8,118	GaNFET (Gallium Nitride)	650 V	29A (Tc)	10V	4.8V @ 700µA	8.4 nC @ 10 V	600 pF @ 400 V	±20V	-	96W (Tc)	85mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	3-PQFN (8x8)	3-PowerTDFN
IPW60R070CFD7XKSA1	Infineon Technologies	MOSFET N-CH 650V 31A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 760µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-21 Package / Case: TO-247-3	Package: -	Stock3,291	MOSFET (Metal Oxide)	650 V	31A (Tc)	10V	4.5V @ 760µA	67 nC @ 10 V	2721 pF @ 400 V	±20V	-	156W (Tc)	70mOhm @ 15.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-21	TO-247-3
FDB8442-F085	onsemi	MOSFET N-CH 40V 28A TO263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 254W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	28A (Ta)	10V	4V @ 250µA	235 nC @ 10 V	12200 pF @ 25 V	±20V	-	254W (Tc)	5mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RS6R060BHTB1	Rohm Semiconductor	NCH 150V 60A, HSOP8, POWER MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 21.8mOhm @ 60A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: -	Stock14,625	MOSFET (Metal Oxide)	150 V	60A (Tc)	6V, 10V	4V @ 1mA	46 nC @ 10 V	2750 pF @ 75 V	±20V	-	104W (Tc)	21.8mOhm @ 60A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
NTMFS5C612NLT1G-UIL5	onsemi	MOSFET N-CH 60V 36A/235A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,425	MOSFET (Metal Oxide)	60 V	36A (Ta), 235A (Tc)	4.5V, 10V	2V @ 250µA	91 nC @ 10 V	6660 pF @ 25 V	±20V	-	3.8W (Ta), 167W (Tc)	1.5mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
AON7404G	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 20V 20A/20A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3x3) Package / Case: 8-PowerVDFN	Package: -	Stock14,511	MOSFET (Metal Oxide)	20 V	20A (Ta), 20A (Tc)	2.5V, 4.5V	1.25V @ 250µA	45 nC @ 4.5 V	3300 pF @ 10 V	±12V	-	5W (Ta), 28W (Tc)	5.3mOhm @ 20A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3x3)	8-PowerVDFN
1N65G	UMW	SOT-223 N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock7,440	MOSFET (Metal Oxide)	650 V	1A (Tj)	10V	4V @ 250µA	4.8 nC @ 10 V	150 pF @ 25 V	±30V	-	-	11Ohm @ 500mA, 10V	150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
MCU15P10YHE3-TP	Micro Commercial Co	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tj) Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	15A (Tc)	10V	4V @ 250µA	15.6 nC @ 10 V	920 pF @ 25 V	±20V	-	50W (Tj)	120mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMN2053UW-13	Diodes Incorporated	MOSFET 8V~24V SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	2.9A (Ta)	1.5V, 4.5V	1V @ 250µA	3.6 nC @ 4.5 V	369 pF @ 10 V	±12V	-	470mW (Ta)	56mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
DMN2055UW-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT323 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 520mW (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock2,280	MOSFET (Metal Oxide)	20 V	3.1A (Ta)	2.5V, 4.5V	1V @ 250µA	4.3 nC @ 4.5 V	400 pF @ 10 V	±8V	-	520mW (Ta)	46mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
2SK3798-STA4-Q-M	Toshiba Semiconductor and Storage	POWER MOSFET TRANSISTOR TO-220(S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	900 V	4A (Ta)	10V	4V @ 1mA	26 nC @ 10 V	800 pF @ 25 V	±30V	-	40W (Tc)	3.5Ohm @ 2A, 10V	150°C	Through Hole	TO-220SIS	TO-220-3 Full Pack
IPW65R050CFD7AXKSA1	Infineon Technologies	MOSFET N-CH 650V 45A TO247-3-41 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	45A (Tc)	10V	4.5V @ 1.24mA	102 nC @ 10 V	4975 pF @ 400 V	±20V	-	227W (Tc)	50mOhm @ 24.8A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
NVMJS1D5N04CLTWG	onsemi	MOSFET N-CH 40V 38A/200A 8LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: SOT-1205, 8-LFPAK56	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	38A (Ta), 200A (Tc)	4.5V, 10V	2V @ 130µA	70 nC @ 10 V	4300 pF @ 20 V	±20V	-	3.8W (Ta), 110W (Tc)	1.4mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-LFPAK	SOT-1205, 8-LFPAK56