Page 592 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

64-0055PBF
Infineon Technologies

MOSFET N-CH TO-220AB

Package: -

Stock2,256
IPD80R1K4CEBTMA1
Infineon Technologies

MOSFET N-CH 800V 3.9A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,528
BSS87 E6433
Infineon Technologies

MOSFET N-CH 240V 260MA SOT-89

Package: TO-243AA

Stock7,440
BSP300 E6327
Infineon Technologies

MOSFET N-CH 800V 190MA SOT-223

Package: TO-261-4, TO-261AA

Stock2,768
IRFU4105Z
Infineon Technologies

MOSFET N-CH 55V 30A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock19,632
IRF3707STRL
Infineon Technologies

MOSFET N-CH 30V 62A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,952
SUD40N02-08-E3
Vishay Siliconix

MOSFET N-CH 20V 40A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock384,000
SUM110N06-3M4L-E3
Vishay Siliconix

MOSFET N-CH 60V 110A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,240
PHM21NQ15T,518
NXP

MOSFET N-CH 150V 22.2A 8HVSON

Package: 8-VDFN Exposed Pad

Stock6,640
HUF75333S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 55V 60A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,848
STE26NA90
STMicroelectronics

MOSFET N-CH 900V 26A ISOTOP

Package: ISOTOP

Stock6,464
2N7002E,215
Nexperia USA Inc.

MOSFET N-CH 60V 0.385A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock7,968
IRFP7718PBF
Infineon Technologies

MOSFET N CH 75V 195A TO247

Package: TO-247-3

Stock6,448
IPD50N10S3L16ATMA1
Infineon Technologies

MOSFET N-CH 100V 50A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,960
APT10035B2FLLG
Microsemi Corporation

MOSFET N-CH 1000V 28A T-MAX

Package: TO-247-3 Variant

Stock3,680
FDN5618P
Fairchild/ON Semiconductor

MOSFET P-CH 60V 1.25A SSOT3

Package: TO-236-3, SC-59, SOT-23-3

Stock205,152
2SK1667-E
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
GT016N10Q
Goford Semiconductor

MOSFET N-CH 100V 228A TO-247

Package: -

Stock75
PJQ4453EP-AU_R2_002A1
Panjit International Inc.

40V P-CHANNEL ENHANCEMENT MODE M

Package: -

Stock15,000
PJL9424_R2_00001
Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
64-0055PBF	Infineon Technologies	MOSFET N-CH TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: -	Package: -	Stock2,256	MOSFET (Metal Oxide)	60V	120A	10V	4V @ 150µA	120nC @ 10V	4520pF @ 50V	±20V	-	230W (Tc)	4.2 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	-	-
IPD80R1K4CEBTMA1	Infineon Technologies	MOSFET N-CH 800V 3.9A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,528	MOSFET (Metal Oxide)	800V	3.9A (Tc)	10V	3.9V @ 240µA	23nC @ 10V	570pF @ 100V	±20V	-	63W (Tc)	1.4 Ohm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
BSS87 E6433	Infineon Technologies	MOSFET N-CH 240V 260MA SOT-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 97pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89 Package / Case: TO-243AA	Package: TO-243AA	Stock7,440	MOSFET (Metal Oxide)	240V	260mA (Ta)	4.5V, 10V	1.8V @ 108µA	5.5nC @ 10V	97pF @ 25V	±20V	-	1W (Ta)	6 Ohm @ 260mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT89	TO-243AA
BSP300 E6327	Infineon Technologies	MOSFET N-CH 800V 190MA SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 20 Ohm @ 190mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock2,768	MOSFET (Metal Oxide)	800V	190mA (Ta)	10V	4V @ 1mA	-	230pF @ 25V	±20V	-	1.8W (Ta)	20 Ohm @ 190mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IRFU4105Z	Infineon Technologies	MOSFET N-CH 55V 30A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock19,632	MOSFET (Metal Oxide)	55V	30A (Tc)	10V	4V @ 250µA	27nC @ 10V	740pF @ 25V	±20V	-	48W (Tc)	24.5 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRF3707STRL	Infineon Technologies	MOSFET N-CH 30V 62A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,952	MOSFET (Metal Oxide)	30V	62A (Tc)	4.5V, 10V	3V @ 250µA	19nC @ 4.5V	1990pF @ 15V	±20V	-	87W (Tc)	12.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUD40N02-08-E3	Vishay Siliconix	MOSFET N-CH 20V 40A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 20V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 20A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock384,000	MOSFET (Metal Oxide)	20V	40A (Tc)	2.5V, 4.5V	600mV @ 250µA (Min)	35nC @ 4.5V	2660pF @ 20V	±12V	-	8.3W (Ta), 71W (Tc)	8.5 mOhm @ 20A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUM110N06-3M4L-E3	Vishay Siliconix	MOSFET N-CH 60V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,240	MOSFET (Metal Oxide)	60V	110A (Tc)	4.5V, 10V	3V @ 250µA	300nC @ 10V	12900pF @ 25V	±20V	-	3.75W (Ta), 375W (Tc)	3.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PHM21NQ15T,518	NXP	MOSFET N-CH 150V 22.2A 8HVSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 22.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HVSON (6x5) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock6,640	MOSFET (Metal Oxide)	150V	22.2A (Tc)	5V, 10V	4V @ 1mA	36.2nC @ 10V	2080pF @ 25V	±20V	-	62.5W (Tc)	55 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-HVSON (6x5)	8-VDFN Exposed Pad
HUF75333S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 60A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,848	MOSFET (Metal Oxide)	55V	66A (Tc)	10V	4V @ 250µA	85nC @ 20V	1300pF @ 25V	±20V	-	150W (Tc)	16 mOhm @ 66A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STE26NA90	STMicroelectronics	MOSFET N-CH 900V 26A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.75V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 660nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 13A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: ISOTOP	Package: ISOTOP	Stock6,464	MOSFET (Metal Oxide)	900V	26A (Tc)	10V	3.75V @ 1mA	660nC @ 10V	1770pF @ 25V	±30V	-	450W (Tc)	300 mOhm @ 13A, 10V	150°C (TJ)	Chassis Mount	ISOTOP?	ISOTOP
2N7002E,215	Nexperia USA Inc.	MOSFET N-CH 60V 0.385A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 385mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,968	MOSFET (Metal Oxide)	60V	385mA (Ta)	4.5V, 10V	2.5V @ 250µA	0.69nC @ 10V	50pF @ 10V	±30V	-	830mW (Ta)	3 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
IRFP7718PBF	Infineon Technologies	MOSFET N CH 75V 195A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 830nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 29550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 517W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock6,448	MOSFET (Metal Oxide)	75V	195A (Tc)	6V, 10V	3.7V @ 250µA	830nC @ 10V	29550pF @ 25V	±20V	-	517W (Tc)	1.8 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IPD50N10S3L16ATMA1	Infineon Technologies	MOSFET N-CH 100V 50A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,960	MOSFET (Metal Oxide)	100V	50A (Tc)	4.5V, 10V	2.4V @ 60µA	64nC @ 10V	4180pF @ 25V	±20V	-	100W (Tc)	15 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
APT10035B2FLLG	Microsemi Corporation	MOSFET N-CH 1000V 28A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 690W (Tc) Rds On (Max) @ Id, Vgs: 370 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock3,680	MOSFET (Metal Oxide)	1000V	28A (Tc)	10V	5V @ 2.5mA	186nC @ 10V	5185pF @ 25V	±30V	-	690W (Tc)	370 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
FDN5618P	Fairchild/ON Semiconductor	MOSFET P-CH 60V 1.25A SSOT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock205,152	MOSFET (Metal Oxide)	60V	1.25A (Ta)	4.5V, 10V	3V @ 250µA	13.8nC @ 10V	430pF @ 30V	±20V	-	500mW (Ta)	170 mOhm @ 1.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
2SK1667-E	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GT016N10Q	Goford Semiconductor	MOSFET N-CH 100V 228A TO-247 FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 228A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-247-3 Package / Case: -	Package: -	Stock75	MOSFET (Metal Oxide)	-	228A (Tc)	10V	4.5V @ 250µA	165 nC @ 10 V	9530 pF @ 50 V	±20V	-	-	2.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-247-3	-
PJQ4453EP-AU_R2_002A1	Panjit International Inc.	40V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2858 pF @ 25 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	40 V	11A (Ta), 55A (Tc)	4.5V, 10V	2.5V @ 250µA	56 nC @ 10 V	2858 pF @ 25 V	±25V	-	2.5W (Ta), 63W (Tc)	11.6mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN3333-8	8-PowerVDFN
PJL9424_R2_00001	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	11A (Ta)	4.5V, 10V	2.5V @ 250µA	22 nC @ 10 V	1258 pF @ 25 V	±20V	-	2.1W (Ta)	9.5mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
PJC7401_R1_00001	Panjit International Inc.	SOT-323, MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock85,008	MOSFET (Metal Oxide)	30 V	1.5A (Ta)	2.5V, 10V	1.3V @ 250µA	11 nC @ 10 V	443 pF @ 15 V	±12V	-	350mW (Ta)	115mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
MCB145N15Y-TP	Micro Commercial Co	MOSFET N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	145A (Tc)	10V	4.5V @ 250µA	108 nC @ 10 V	7950 pF @ 75 V	±20V	-	357W (Tc)	8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PJQ4431EP-AU_R2_002A1	Panjit International Inc.	30V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock14,460	MOSFET (Metal Oxide)	30 V	15A (Ta), 78A (Tc)	4.5V, 10V	2.5V @ 250µA	68 nC @ 10 V	3040 pF @ 25 V	±25V	-	2.5W (Ta), 68W (Tc)	7mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN3333-8	8-PowerVDFN
SQ3493EV-T1_GE3	Vishay Siliconix	MOSFET P-CH 20V 8A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock10,119	MOSFET (Metal Oxide)	20 V	8A (Tc)	2.5V, 4.5V	1.4V @ 250µA	34 nC @ 4.5 V	3300 pF @ 10 V	±12V	-	5W (Tc)	21mOhm @ 5A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SPB07N60C3ATMA1	Infineon Technologies	MOSFET N-CH 650V 7.3A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	7.3A (Tc)	10V	3.9V @ 350µA	27 nC @ 10 V	790 pF @ 25 V	±20V	-	83W (Tc)	600mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MCACD40N03-TP	Micro Commercial Co	N-CHANNEL MOSFET, DFN5060 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock30,000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UJ4SC075005L8S	Qorvo	SICFET N-CH 750V 120A TOLL FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.153kW (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TOLL Package / Case: 8-PowerSFN	Package: -	Stock5,508	SiCFET (Cascode SiCJFET)	750 V	120A (Tc)	12V	6V @ 10mA	164 nC @ 15 V	8374 pF @ 400 V	±20V	-	1.153kW (Tc)	7.2mOhm @ 80A, 12V	-55°C ~ 175°C (TJ)	Surface Mount	TOLL	8-PowerSFN
IRFP4110PBFXKMA1	Infineon Technologies	TRENCH >=100V PG-TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Stock3,678	MOSFET (Metal Oxide)	100 V	180A (Tc)	10V	4V @ 250µA	210 nC @ 10 V	9620 pF @ 50 V	±20V	-	370W (Tc)	4.5mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3