Page 597 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7703GTRPBF
Infineon Technologies

MOSFET P-CH 40V 6A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock3,616
EFC4621R-A-TR
ON Semiconductor

MOSFET N-CH 24V 6A EFCP

Package: 4-XFBGA

Stock5,040
2SK3817-DL-E
ON Semiconductor

MOSFET N-CH 60V 60A SMP-FD

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,632
PSMN3R5-30LL,115
NXP

MOSFET N-CH 30V QFN3333

Package: 8-VDFN Exposed Pad

Stock7,280
2SK2376(Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 45A TO220FL

Package: TO-220-3, Short Tab

Stock7,504
SI9410DY,518
NXP

MOSFET N-CH 30V SOT96-1

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,808
HUF75831SK8T
Fairchild/ON Semiconductor

MOSFET N-CH 150V 3A 8-SOP

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,632
FQNL1N50BTA
Fairchild/ON Semiconductor

MOSFET N-CH 500V 0.27A TO-92L

Package: TO-226-3, TO-92-3 Long Body

Stock4,160
STB15NM65N
STMicroelectronics

MOSFET N-CH 650V 15.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock13,008
STV160NF02LT4
STMicroelectronics

MOSFET N-CH 20V 160A POWERSO-10

Package: PowerSO-10 Exposed Bottom Pad

Stock3,936
IPI65R660CFDXKSA1
Infineon Technologies

MOSFET N-CH 650V 6A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,968
IXFK44N80Q3
IXYS

MOSFET N-CH 800V 44A TO-264

Package: TO-264-3, TO-264AA

Stock4,128
IRLI540GPBF
Vishay Siliconix

MOSFET N-CH 100V 17A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock50,580
PSMN5R6-100YSFQ
Nexperia USA Inc.

PSMN5R6-100YSF/SOT1023/4 LEADS

Package: -

Stock6,208
AOTF11N70
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 11A TO220F

Package: TO-220-3 Full Pack

Stock185,592
STFW20N65M5
STMicroelectronics

MOSFET N-CH 650V 18A TO-3PF

Package: TO-3P-3 Full Pack

Stock3,584
DMP1022UFDF-7
Diodes Incorporated

MOSFET P-CH 12V 9.5A U-DFN2020-6

Package: 6-UDFN Exposed Pad

Stock36,000
NID9N05ACLT4G
ON Semiconductor

MOSFET N-CH 52V 9A LL DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,304
IXTQ88N30P
IXYS

MOSFET N-CH 300V 88A TO-3P

Package: TO-3P-3, SC-65-3

Stock169,464
IXTA3N100D2
IXYS

MOSFET N-CH 1000V 3A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,896

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7703GTRPBF	Infineon Technologies	MOSFET P-CH 40V 6A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock3,616	MOSFET (Metal Oxide)	40V	6A (Ta)	4.5V, 10V	3V @ 250µA	62nC @ 4.5V	5220pF @ 25V	±20V	-	1.5W (Ta)	28 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
EFC4621R-A-TR	ON Semiconductor	MOSFET N-CH 24V 6A EFCP FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EFCP1818-4CE-22 Package / Case: 4-XFBGA	Package: 4-XFBGA	Stock5,040	-	-	-	-	-	-	-	-	-	-	-	150°C (TJ)	Surface Mount	EFCP1818-4CE-22	4-XFBGA
2SK3817-DL-E	ON Semiconductor	MOSFET N-CH 60V 60A SMP-FD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 20V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.65W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMP-FD Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,632	MOSFET (Metal Oxide)	60V	60A (Ta)	-	2.6V @ 1mA	67nC @ 10V	3500pF @ 20V	-	-	1.65W (Ta), 65W (Tc)	15 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	SMP-FD	TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN3R5-30LL,115	NXP	MOSFET N-CH 30V QFN3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2061pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN3333 (3.3x3.3) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock7,280	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	2.15V @ 1mA	37nC @ 10V	2061pF @ 15V	±20V	-	71W (Tc)	3.6 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN3333 (3.3x3.3)	8-VDFN Exposed Pad
2SK2376(Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 45A TO220FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FL Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock7,504	MOSFET (Metal Oxide)	60V	45A (Ta)	4V, 10V	2V @ 1mA	110nC @ 10V	3350pF @ 10V	±20V	-	100W (Tc)	17 mOhm @ 25A, 10V	150°C (TJ)	Through Hole	TO-220FL	TO-220-3, Short Tab
SI9410DY,518	NXP	MOSFET N-CH 30V SOT96-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,808	MOSFET (Metal Oxide)	30V	-	4.5V, 10V	1V @ 250µA	50nC @ 10V	-	±20V	-	2.5W (Ta)	30 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
HUF75831SK8T	Fairchild/ON Semiconductor	MOSFET N-CH 150V 3A 8-SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 95 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,632	MOSFET (Metal Oxide)	150V	3A (Ta)	10V	4V @ 250µA	80nC @ 20V	1175pF @ 25V	±20V	-	2.5W (Ta)	95 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
FQNL1N50BTA	Fairchild/ON Semiconductor	MOSFET N-CH 500V 0.27A TO-92L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 270mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 135mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92L Package / Case: TO-226-3, TO-92-3 Long Body	Package: TO-226-3, TO-92-3 Long Body	Stock4,160	MOSFET (Metal Oxide)	500V	270mA (Tc)	10V	3.7V @ 250µA	5.5nC @ 10V	150pF @ 25V	±30V	-	1.5W (Tc)	9 Ohm @ 135mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92L	TO-226-3, TO-92-3 Long Body
STB15NM65N	STMicroelectronics	MOSFET N-CH 650V 15.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,008	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 250µA	55nC @ 10V	1900pF @ 50V	±25V	-	150W (Tc)	270 mOhm @ 7.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STV160NF02LT4	STMicroelectronics	MOSFET N-CH 20V 160A POWERSO-10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 15V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 80A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PowerSO Package / Case: PowerSO-10 Exposed Bottom Pad	Package: PowerSO-10 Exposed Bottom Pad	Stock3,936	MOSFET (Metal Oxide)	20V	160A (Tc)	5V, 10V	1V @ 250µA	160nC @ 10V	4800pF @ 15V	±15V	-	210W (Tc)	2.5 mOhm @ 80A, 10V	175°C (TJ)	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad
IPI65R660CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 6A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 660 mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,968	MOSFET (Metal Oxide)	650V	6A (Tc)	10V	4.5V @ 200µA	22nC @ 10V	615pF @ 100V	±20V	-	62.5W (Tc)	660 mOhm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IXFK44N80Q3	IXYS	MOSFET N-CH 800V 44A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9840pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,128	MOSFET (Metal Oxide)	800V	44A (Tc)	10V	6.5V @ 8mA	185nC @ 10V	9840pF @ 25V	±30V	-	1250W (Tc)	190 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IRLI540GPBF	Vishay Siliconix	MOSFET N-CH 100V 17A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock50,580	MOSFET (Metal Oxide)	100V	17A (Tc)	4V, 5V	2V @ 250µA	64nC @ 5V	2200pF @ 25V	±10V	-	48W (Tc)	77 mOhm @ 10A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
PSMN5R6-100YSFQ	Nexperia USA Inc.	PSMN5R6-100YSF/SOT1023/4 LEADS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,208	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOTF11N70	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 700V 11A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 870 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock185,592	MOSFET (Metal Oxide)	700V	11A (Tc)	10V	4.5V @ 250µA	45nC @ 10V	2150pF @ 25V	±30V	-	50W (Tc)	870 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
STFW20N65M5	STMicroelectronics	MOSFET N-CH 650V 18A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1434pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock3,584	MOSFET (Metal Oxide)	650V	18A (Tc)	10V	5V @ 250µA	36nC @ 10V	1434pF @ 100V	±25V	-	48W (Tc)	190 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
DMP1022UFDF-7	Diodes Incorporated	MOSFET P-CH 12V 9.5A U-DFN2020-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48.3nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2712pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 730mW (Ta) Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock36,000	MOSFET (Metal Oxide)	12V	9.5A (Ta)	1.5V, 4.5V	800mV @ 250µA	48.3nC @ 8V	2712pF @ 10V	±8V	-	730mW (Ta)	15.3 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
NID9N05ACLT4G	ON Semiconductor	MOSFET N-CH 52V 9A LL DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 52V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 12V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 40V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.74W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,304	MOSFET (Metal Oxide)	52V	9A (Ta)	3V, 12V	2.5V @ 100µA	7nC @ 4.5V	250pF @ 40V	±15V	-	1.74W (Ta)	90 mOhm @ 9A, 12V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTQ88N30P	IXYS	MOSFET N-CH 300V 88A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock169,464	MOSFET (Metal Oxide)	300V	88A (Tc)	10V	5V @ 250µA	180nC @ 10V	6300pF @ 25V	±20V	-	600W (Tc)	40 mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTA3N100D2	IXYS	MOSFET N-CH 1000V 3A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 1.5A, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,896	MOSFET (Metal Oxide)	1000V	3A (Tc)	-	-	37.5nC @ 5V	1020pF @ 25V	±20V	Depletion Mode	125W (Tc)	5.5 Ohm @ 1.5A, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF9N90CT	Fairchild/ON Semiconductor	MOSFET N-CH 900V 8A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,256	MOSFET (Metal Oxide)	900V	8A (Tc)	10V	5V @ 250µA	58nC @ 10V	2730pF @ 25V	±30V	-	68W (Tc)	1.4 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDMS0310AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V 19A PT8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2280pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock43,572	MOSFET (Metal Oxide)	30V	19A (Ta), 22A (Tc)	4.5V, 10V	3V @ 1mA	37nC @ 10V	2280pF @ 15V	±20V	-	2.5W (Ta), 41W (Tc)	4.3 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
NVD3055-094T4G	onsemi	MOSFET N-CH 60V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Rds On (Max) @ Id, Vgs: 94mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	12A (Ta)	10V	4V @ 250µA	20 nC @ 10 V	450 pF @ 25 V	±20V	-	1.5W (Ta), 48W (Tj)	94mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
NP90N06VDK-E1-AY	Renesas Electronics Corporation	POWER TRANSISTOR N-CH AUTO POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 147W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 45A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-252 (MP-3ZP) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock9,603	MOSFET (Metal Oxide)	60 V	90A (Tc)	4.5V, 10V	2.5V @ 250µA	95 nC @ 10 V	6000 pF @ 25 V	±20V	-	1.2W (Ta), 147W (Tc)	5.3mOhm @ 45A, 10V	175°C	Surface Mount	TO-252 (MP-3ZP)	TO-252-3, DPAK (2 Leads + Tab), SC-63
2SJ325-AY	Renesas Electronics Corporation	P-CHANNEL SMALL SIGNAL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AON7408L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 7.5A/20A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3x3) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	7.5A (Ta), 20A (Ta)	4.5V, 10V	3V @ 250µA	8 nC @ 4.5 V	820 pF @ 15 V	±20V	-	1.7W (Ta), 20W (Tc)	22mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3x3)	8-PowerVDFN
DMN62D2UT-13	Diodes Incorporated	2N7002 FAMILY SOT523 T&R 10K FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 334mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	334mA (Ta)	1.8V, 5V	1V @ 250µA	0.8 nC @ 4.5 V	41 pF @ 30 V	±20V	-	400mW (Ta)	2Ohm @ 50mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
FCH085N80-F155	onsemi	MOSFET N-CH 800V 46A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4.6mA Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10825 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	46A (Tc)	10V	4.5V @ 4.6mA	255 nC @ 10 V	10825 pF @ 100 V	±20V	-	446W (Tc)	85mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3