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Renesas Electronics America |
MOSFET N-CH 30V 60A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 30A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock122,256 |
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MOSFET (Metal Oxide) | 30V | 60A (Tc) | 10V | 4V @ 250µA | 135nC @ 10V | 7500pF @ 25V | ±20V | - | 1.2W (Ta), 105W (Tc) | 3.8 mOhm @ 30A, 10V | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microsemi Corporation |
MOSFET N-CH 200V 100A T-MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX? [B2]
- Package / Case: TO-247-3 Variant
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Package: TO-247-3 Variant |
Stock4,672 |
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MOSFET (Metal Oxide) | 200V | 100A (Tc) | 10V | 4V @ 2.5mA | 435nC @ 10V | 10200pF @ 25V | ±30V | - | 520W (Tc) | 22 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
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NXP |
MOSFET N-CH 75V 75A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5585pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,232 |
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MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 4V @ 1mA | 91nC @ 10V | 5585pF @ 25V | ±20V | - | 300W (Tc) | 5.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 15A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,728 |
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MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4V, 5V | 2V @ 250µA | 28nC @ 5V | 930pF @ 25V | ±10V | - | 3.7W (Ta), 88W (Tc) | 160 mOhm @ 9A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 30V 95.9A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 95.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2786pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock2,080 |
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MOSFET (Metal Oxide) | 30V | 95.9A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 22.9nC @ 4.5V | 2786pF @ 12V | ±20V | - | 62.5W (Tc) | 4.3 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 40V 100A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 4.25 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock2,880 |
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MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.9V @ 500µA | 63nC @ 10V | 2200pF @ 25V | ±20V | - | 79W (Tc) | 4.25 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET P-CH 30V 50A TO252-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 25V
- Vgs (Max): +5V, -16V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,440 |
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MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2V @ 85µA | 55nC @ 10V | 3770pF @ 25V | +5V, -16V | - | 58W (Tc) | 10.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 11A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,816 |
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MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 4V @ 250µA | 52nC @ 10V | 1423pF @ 25V | ±30V | - | 170W (Tc) | 520 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET BVDSS: 501V 650V TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 273.5pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,936 |
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MOSFET (Metal Oxide) | 600V | 2.5A (Tc) | 10V | 4V @ 250µA | 8.2nC @ 10V | 273.5pF @ 25V | ±30V | - | 41W (Tc) | 4.5 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Central Semiconductor Corp |
MOSFET P-CH 20V 0.1A SOT883
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.66nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 3V
- Vgs (Max): 10V
- FET Feature: -
- Power Dissipation (Max): 100mW (Ta)
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-883VL
- Package / Case: SC-101, SOT-883
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Package: SC-101, SOT-883 |
Stock4,752 |
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MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 1.1V @ 250µA | 0.66nC @ 4.5V | 45pF @ 3V | 10V | - | 100mW (Ta) | 8 Ohm @ 10mA, 4V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883VL | SC-101, SOT-883 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 8-MLP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 33W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 16.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-MLP (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock256,428 |
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MOSFET (Metal Oxide) | 30V | 16.9A (Ta), 20A (Tc) | 4.5V, 10V | 3V @ 250µA | 57nC @ 10V | 3890pF @ 15V | ±20V | - | 2.3W (Ta), 33W (Tc) | 5.7 mOhm @ 16.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 650V 6A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
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Package: TO-251-3 Long Leads, IPak, TO-251AB |
Stock27,300 |
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MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 4V @ 250µA | 48nC @ 10V | 820pF @ 100V | ±30V | - | 78W (Tc) | 600 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Long Leads, IPak, TO-251AB |
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Infineon Technologies |
MOSFET P-CH 100V 15A TO252-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1.54mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 128W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 11.3A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock14,616 |
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MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4.5V, 10V | 2V @ 1.54mA | 62nC @ 10V | 1490pF @ 25V | ±20V | - | 128W (Tc) | 200 mOhm @ 11.3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 180A 2WDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 16900pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M?
- Package / Case: 3-WDSON
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Package: 3-WDSON |
Stock49,104 |
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MOSFET (Metal Oxide) | 40V | 36A (Ta), 180A (Tc) | 4.5V, 10V | 2V @ 250µA | 196nC @ 10V | 16900pF @ 20V | ±20V | - | 2.8W (Ta), 89W (Tc) | 1.4 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M? | 3-WDSON |
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onsemi |
MOSFET N-CH 40V 65A/300A 8HPSOF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 475µA
- Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 4.3W (Ta), 198.4W (Tc)
- Rds On (Max) @ Id, Vgs: 0.57mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HPSOF
- Package / Case: 8-PowerSFN
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Package: - |
Stock5,580 |
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MOSFET (Metal Oxide) | 40 V | 65A (Ta), 300A (Tc) | - | 4V @ 475µA | 185 nC @ 10 V | 12600 pF @ 25 V | +20V, -16V | - | 4.3W (Ta), 198.4W (Tc) | 0.57mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Renesas Electronics Corporation |
MOSFET N-CH 30V 18A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 10 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 5.6mOhm @ 9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 18A (Ta) | - | - | 16 nC @ 4.5 V | 2440 pF @ 10 V | - | - | 2W (Ta) | 5.6mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Microchip Technology |
SICFET N-CH 700V 131A TO247-3
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
|
Package: - |
Stock1,299 |
|
SiCFET (Silicon Carbide) | 700 V | 131A (Tc) | 20V | 2.4V @ 1mA | 215 nC @ 20 V | 4500 pF @ 700 V | +25V, -10V | - | 400W (Tc) | 19mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Rohm Semiconductor |
SICFET N-CH 1200V 204A MODULE
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 35.2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V
- Vgs (Max): +22V, -6V
- FET Feature: -
- Power Dissipation (Max): 1360W (Tc)
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Module
- Package / Case: Module
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Package: - |
Stock12 |
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SiCFET (Silicon Carbide) | 1200 V | 204A (Tc) | - | 4V @ 35.2mA | - | 20000 pF @ 10 V | +22V, -6V | - | 1360W (Tc) | - | 175°C (TJ) | Chassis Mount | Module | Module |
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Vishay Siliconix |
N-CHANNEL 40 V (D-S) MOSFET POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 36.2A (Ta), 128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock18,000 |
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MOSFET (Metal Oxide) | 40 V | 36.2A (Ta), 128A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 70 nC @ 10 V | 3850 pF @ 20 V | +20V, -16V | - | 5.2W (Ta), 65.7W (Tc) | 2.2mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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MOSLEADER |
N 20V SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Panjit International Inc. |
40V P-CHANNEL ENHANCEMENT MODE M
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 63W (Tc)
- Rds On (Max) @ Id, Vgs: 17mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock5,634 |
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MOSFET (Metal Oxide) | 40 V | 8.5A (Ta), 45A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 19 nC @ 4.5 V | 2030 pF @ 25 V | ±20V | - | 2W (Ta), 63W (Tc) | 17mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 600V 20A, TO-220AB, POWER MO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Vgs(th) (Max) @ Id: 6V @ 1.65mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 182W (Tc)
- Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 12V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock2,925 |
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MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V, 12V | 6V @ 1.65mA | 28 nC @ 10 V | 1200 pF @ 100 V | ±30V | - | 182W (Tc) | 185mOhm @ 6A, 12V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Vishay Siliconix |
N-CHANNEL 40 V (D-S) MOSFET POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 20 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
- Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 14A (Ta), 36A (Tc) | 7.5V, 10V | 2.4V @ 250µA | 18 nC @ 10 V | 850 pF @ 20 V | +20V, -16V | - | 3.2W (Ta), 19.8W (Tc) | 9mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247 60MO
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5V @ 4.2mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Stock150 |
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SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 5V @ 4.2mA | 46 nC @ 18 V | 1530 pF @ 800 V | +25V, -10V | - | 170W (Tc) | 78mOhm @ 18A, 18V | 175°C | Through Hole | TO-247 | TO-247-3 |
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Taiwan Semiconductor Corporation |
600V, 11A, SINGLE N-CHANNEL POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
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Package: - |
Stock45,000 |
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MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 5V @ 1mA | 21.4 nC @ 10 V | 818 pF @ 100 V | ±20V | - | 125W (Tc) | 390mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPAK, TO-251AA |
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Renesas Electronics Corporation |
MOSFET N-CH 16V 100MA SC70-3 SSP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 16 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.6V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 3 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 10Ohm @ 1mA, 4V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold
- Package / Case: SC-70, SOT-323
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 16 V | 100mA (Tc) | - | 1.6V @ 10µA | - | 18 pF @ 3 V | - | - | - | 10Ohm @ 1mA, 4V | - | Surface Mount | SC-70-3, SSP, Miniature Mini Mold | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 25A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 36.8mOhm @ 12.5A, 4.5V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock10,815 |
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MOSFET (Metal Oxide) | 60 V | 25A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 15 nC @ 10 V | 855 pF @ 10 V | ±20V | - | 57W (Tc) | 36.8mOhm @ 12.5A, 4.5V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |