Page 6 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7809ATR
Infineon Technologies

MOSFET N-CH 30V 14.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock40,728
CPH6443-P-TL-H
ON Semiconductor

MOSFET N-CH 35V 6A CPH6

Package: SOT-23-6 Thin, TSOT-23-6

Stock2,288
AOD484
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 25A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock179,676
APT17N80SC3G
Microsemi Corporation

MOSFET N-CH 800V 17A D3PAK

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock2,720
FDD3580
Fairchild/ON Semiconductor

MOSFET N-CH 80V 7.7A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,776
IRF620S
Vishay Siliconix

MOSFET N-CH 200V 5.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,492
STF20NF06
STMicroelectronics

MOSFET N-CH 60V 20A TO220FP

Package: TO-220-3 Full Pack

Stock498,492
IPB060N15N5ATMA1
Infineon Technologies

DIFFERENTIATED MOSFETS

Package: -

Stock6,800
IXFK250N10P
IXYS

MOSFET N-CH 100V 250A TO-264

Package: TO-264-3, TO-264AA

Stock3,664
SIHG16N50C-E3
Vishay Siliconix

MOSFET N-CH 500V 16A TO-247AC

Package: TO-247-3

Stock65,880
IXTP2N100P
IXYS

MOSFET N-CH 1000V 2A TO-220

Package: TO-220-3

Stock5,408
SQM120N04-1M7_GE3
Vishay Siliconix

MOSFET N-CH 40V 120A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,392
STP17N80K5
STMicroelectronics

MOSFET N-CH 800V 14A TO220

Package: TO-220-3

Stock5,168
STD95P3LLH6AG
STMicroelectronics

MOSFET N-CH 30V 80A DPAK

Package: -

Stock4,992
STB11N65M5
STMicroelectronics

MOSFET N CH 650V 9A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,416
APT5010JVRU2
Microsemi Corporation

MOSFET N-CH 500V 44A SOT227

Package: SOT-227-4, miniBLOC

Stock6,108
IXFK94N50P2
IXYS

MOSFET N-CH 500V 94A TO264

Package: TO-264-3, TO-264AA

Stock6,416
PMV230ENEAR
Nexperia USA Inc.

MOSFET N-CH 60V TO-236AB

Package: TO-236-3, SC-59, SOT-23-3

Stock6,656
FDMS5360L_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 60A POWER56

Package: 8-PowerTDFN

Stock3,184
SI2304-TP
Micro Commercial Co

N-CHANNEL MOSFET, SOT-23 PACKAGE

Package: TO-236-3, SC-59, SOT-23-3

Stock183,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7809ATR	Infineon Technologies	MOSFET N-CH 30V 14.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock40,728	MOSFET (Metal Oxide)	30V	14.5A (Ta)	4.5V	1V @ 250µA	75nC @ 5V	7300pF @ 16V	±12V	-	2.5W (Ta)	8.5 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
CPH6443-P-TL-H	ON Semiconductor	MOSFET N-CH 35V 6A CPH6 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-CPH Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock2,288	-	-	-	-	-	-	-	-	-	-	-	150°C (TJ)	Surface Mount	6-CPH	SOT-23-6 Thin, TSOT-23-6
AOD484	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 25A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock179,676	MOSFET (Metal Oxide)	30V	25A (Tc)	4.5V, 10V	2.5V @ 250µA	21nC @ 10V	1220pF @ 15V	±20V	-	2.1W (Ta), 50W (Tc)	15 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
APT17N80SC3G	Microsemi Corporation	MOSFET N-CH 800V 17A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock2,720	MOSFET (Metal Oxide)	800V	17A (Tc)	10V	3.9V @ 1mA	90nC @ 10V	2250pF @ 25V	±20V	-	208W (Tc)	290 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
FDD3580	Fairchild/ON Semiconductor	MOSFET N-CH 80V 7.7A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 7.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,776	MOSFET (Metal Oxide)	80V	7.7A (Ta)	6V, 10V	4V @ 250µA	49nC @ 10V	1760pF @ 40V	±20V	-	3.8W (Ta), 42W (Tc)	29 mOhm @ 7.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF620S	Vishay Siliconix	MOSFET N-CH 200V 5.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,492	MOSFET (Metal Oxide)	200V	5.2A (Tc)	10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	±20V	-	3W (Ta), 50W (Tc)	800 mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STF20NF06	STMicroelectronics	MOSFET N-CH 60V 20A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock498,492	MOSFET (Metal Oxide)	60V	20A (Tc)	10V	4V @ 250µA	18nC @ 10V	400pF @ 25V	±20V	-	28W (Tc)	70 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IPB060N15N5ATMA1	Infineon Technologies	DIFFERENTIATED MOSFETS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,800	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFK250N10P	IXYS	MOSFET N-CH 100V 250A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,664	MOSFET (Metal Oxide)	100V	250A (Tc)	10V	5V @ 1mA	205nC @ 10V	16000pF @ 25V	±20V	-	1250W (Tc)	6.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
SIHG16N50C-E3	Vishay Siliconix	MOSFET N-CH 500V 16A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock65,880	MOSFET (Metal Oxide)	500V	16A (Tc)	10V	5V @ 250µA	68nC @ 10V	1900pF @ 25V	±30V	-	250W (Tc)	380 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
IXTP2N100P	IXYS	MOSFET N-CH 1000V 2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 24.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,408	MOSFET (Metal Oxide)	1000V	2A (Tc)	10V	4.5V @ 100µA	24.3nC @ 10V	655pF @ 25V	±20V	-	86W (Tc)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SQM120N04-1M7_GE3	Vishay Siliconix	MOSFET N-CH 40V 120A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,392	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	3.5V @ 250µA	310nC @ 10V	17350pF @ 25V	±20V	-	300W (Tc)	1.7 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP17N80K5	STMicroelectronics	MOSFET N-CH 800V 14A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 866pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,168	MOSFET (Metal Oxide)	800V	14A (Tc)	10V	5V @ 250µA	26nC @ 10V	866pF @ 100V	±30V	-	170W (Tc)	340 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STD95P3LLH6AG	STMicroelectronics	MOSFET N-CH 30V 80A DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,992	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STB11N65M5	STMicroelectronics	MOSFET N CH 650V 9A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 644pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,416	MOSFET (Metal Oxide)	650V	9A (Tc)	10V	5V @ 250µA	17nC @ 10V	644pF @ 100V	±25V	-	85W (Tc)	480 mOhm @ 4.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APT5010JVRU2	Microsemi Corporation	MOSFET N-CH 500V 44A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 44A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 312nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7410pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,108	MOSFET (Metal Oxide)	500V	44A	10V	4V @ 2.5mA	312nC @ 10V	7410pF @ 25V	±30V	-	450W (Tc)	100 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
IXFK94N50P2	IXYS	MOSFET N-CH 500V 94A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1300W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,416	MOSFET (Metal Oxide)	500V	94A (Tc)	10V	5V @ 8mA	220nC @ 10V	13700pF @ 25V	±30V	-	1300W (Tc)	55 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
PMV230ENEAR	Nexperia USA Inc.	MOSFET N-CH 60V TO-236AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480mW (Ta), 1.45W (Tc) Rds On (Max) @ Id, Vgs: 222 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,656	MOSFET (Metal Oxide)	60V	1.5A (Ta)	4.5V, 10V	2.7V @ 250µA	4.8nC @ 10V	177pF @ 30V	±20V	-	480mW (Ta), 1.45W (Tc)	222 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
FDMS5360L_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 60A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3695pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,184	MOSFET (Metal Oxide)	60V	60A (Tc)	4.5V, 10V	3V @ 250µA	72nC @ 10V	3695pF @ 30V	±20V	-	150W (Tc)	8.5 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerTDFN
SI2304-TP	Micro Commercial Co	N-CHANNEL MOSFET, SOT-23 PACKAGE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250mW Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock183,000	MOSFET (Metal Oxide)	30V	2.5A	10V	3V @ 250µA	10nC @ 10V	240pF @ 15V	±20V	-	250mW	90 mOhm @ 2.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
PHP18NQ10T,127	Nexperia USA Inc.	MOSFET N-CH 100V 18A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock20,796	MOSFET (Metal Oxide)	100V	18A (Tc)	10V	4V @ 1mA	21nC @ 10V	633pF @ 25V	±20V	-	79W (Tc)	90 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
TPS1101D	Texas Instruments	MOSFET P-CH 15V 2.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +2V, -15V FET Feature: - Power Dissipation (Max): 791mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,608	MOSFET (Metal Oxide)	15V	2.3A (Ta)	2.7V, 10V	1.5V @ 250µA	11.25nC @ 10V	-	+2V, -15V	-	791mW (Ta)	90 mOhm @ 2.5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
AOI450A70	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1115 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPAK	Package: -	Request a Quote	MOSFET (Metal Oxide)	700 V	11A (Tc)	10V	3.6V @ 250µA	20 nC @ 10 V	1115 pF @ 100 V	±20V	-	125W (Tc)	450mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPAK
DMP3007LK3Q-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V TO252 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	18.5A (Ta)	4.5V, 10V	2.8V @ 250µA	64.2 nC @ 10 V	2826 pF @ 15 V	±20V	-	1.5W (Ta)	7mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
A2N7002HL-HF	Comchip Technology	MOSFET N-CH 60V 300MA DFN1006-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	300mA (Ta)	-	2.5V @ 250µA	-	41 pF @ 20 V	±20V	-	150mW (Ta)	2.5Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006-3	SC-101, SOT-883
2SJ653-CB11-ON	onsemi	MOSFET FOR 60V MOTOR DRIVERS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TSM70N380CH	Taiwan Semiconductor Corporation	700V, 11A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	700 V	11A (Tc)	10V	4V @ 250µA	18.8 nC @ 10 V	981 pF @ 100 V	±30V	-	125W (Tc)	380mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPAK, TO-251AA
DMP3028LPSQ-13	Diodes Incorporated	MOSFET P-CH 30V 21A PWRDI5060-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.28W Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: -	Stock17,907	MOSFET (Metal Oxide)	30 V	21A (Tc)	4.5V, 10V	2.4V @ 250µA	22 nC @ 10 V	1372 pF @ 15 V	±20V	-	1.28W	28mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN