Page 638 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF3709ZLPBF
Infineon Technologies

MOSFET N-CH 30V 87A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock65,520
NP89N055PUK-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 90A TO-220

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,640
BS108G
ON Semiconductor

MOSFET N-CH 200V 0.25A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock2,176
STW20NB50
STMicroelectronics

MOSFET N-CH 500V 20A TO-247

Package: TO-247-3

Stock59,688
IPW50R199CPFKSA1
Infineon Technologies

MOSFET N-CH 550V 17A TO-247

Package: TO-247-3

Stock4,496
IXFH86N30T
IXYS

MOSFET N-CH 300V 86A TO-247

Package: TO-247-3

Stock390,000
EPC2039ENGRT
EPC

TRANS GAN 80V 6.8A BUMPED DIE

Package: Die

Stock4,608
AOB260L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 20A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,192
NVMFS5844NLWFT1G
ON Semiconductor

MOSFET N-CH 60V 61A SO8FL

Package: 8-PowerTDFN

Stock6,160
AOT2910L
Alpha & Omega Semiconductor Inc.

MOSFET N CH 100V 6A TO220

Package: TO-220-3

Stock62,376
SIHA25N50E-E3
Vishay Siliconix

MOSFET N-CH 500V 26A TO-220FP

Package: TO-220-3 Full Pack

Stock5,904
CSD17484F4T
Texas Instruments

MOSFET N-CH 30V 1.5A 3PICOSTAR

Package: 3-XFDFN

Stock3,776
CMPDM202PH TR
Central Semiconductor Corp

MOSFET P-CH 20V 2.3A SOT-23F

Package: SOT-23-3 Flat Leads

Stock5,600
SI4800BDY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 6.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock648,240
SCT2H12NYTB
Rohm Semiconductor

1700V 1.2 OHM 4A SIC FET

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock18,552
STP23NM60ND
STMicroelectronics

MOSFET N-CH 600V 19.5A TO-220

Package: TO-220-3

Stock12,552
CSD17483F4T
Texas Instruments

MOSFET N-CH 30V 1.5A 3PICOSTAR

Package: 3-XFDFN

Stock46,950
R8011KNXC7G
Rohm Semiconductor

HIGH-SPEED SWITCHING NCH 800V 11

Package: -

Stock5,997
DMP3007LSS-13
Diodes Incorporated

MOSFET P-CH 30V 14A 8SO T&R 2

Package: -

Stock8,523
DMN52D0U-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT23 T&R

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3709ZLPBF	Infineon Technologies	MOSFET N-CH 30V 87A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock65,520	MOSFET (Metal Oxide)	30V	87A (Tc)	4.5V, 10V	2.25V @ 250µA	26nC @ 4.5V	2130pF @ 15V	±20V	-	79W (Tc)	6.3 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
NP89N055PUK-E1-AY	Renesas Electronics America	MOSFET N-CH 55V 90A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 147W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 45A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,640	MOSFET (Metal Oxide)	55V	90A (Tc)	10V	4V @ 250µA	102nC @ 10V	6000pF @ 25V	±20V	-	1.8W (Ta), 147W (Tc)	4 mOhm @ 45A, 10V	175°C (TJ)	Surface Mount	TO-263-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BS108G	ON Semiconductor	MOSFET N-CH 200V 0.25A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2V, 2.8V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 100mA, 2.8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock2,176	MOSFET (Metal Oxide)	200V	250mA (Ta)	2V, 2.8V	1.5V @ 1mA	-	150pF @ 25V	±20V	-	350mW (Ta)	8 Ohm @ 100mA, 2.8V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
STW20NB50	STMicroelectronics	MOSFET N-CH 500V 20A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock59,688	MOSFET (Metal Oxide)	500V	20A (Tc)	10V	5V @ 250µA	110nC @ 10V	4700pF @ 25V	±30V	-	250W (Tc)	250 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPW50R199CPFKSA1	Infineon Technologies	MOSFET N-CH 550V 17A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 660µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,496	MOSFET (Metal Oxide)	550V	17A (Tc)	10V	3.5V @ 660µA	45nC @ 10V	1800pF @ 100V	±20V	-	139W (Tc)	199 mOhm @ 9.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IXFH86N30T	IXYS	MOSFET N-CH 300V 86A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 860W (Tc) Rds On (Max) @ Id, Vgs: 43 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	300V	86A (Tc)	10V	5V @ 4mA	180nC @ 10V	11300pF @ 25V	±20V	-	860W (Tc)	43 mOhm @ 43A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
EPC2039ENGRT	EPC	TRANS GAN 80V 6.8A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 40V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock4,608	GaNFET (Gallium Nitride)	80V	6.8A (Ta)	5V	2.5V @ 2mA	2nC @ 5V	210pF @ 40V	+6V, -4V	-	-	22 mOhm @ 6A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
AOB260L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 20A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 330W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,192	MOSFET (Metal Oxide)	60V	20A (Ta), 140A (Tc)	10V	3.2V @ 250µA	180nC @ 10V	14200pF @ 30V	±20V	-	1.9W (Ta), 330W (Tc)	2.2 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5844NLWFT1G	ON Semiconductor	MOSFET N-CH 60V 61A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,160	MOSFET (Metal Oxide)	60V	11.2A (Ta)	4.5V, 10V	2.3V @ 250µA	30nC @ 10V	1460pF @ 25V	±20V	-	3.7W (Ta), 107W (Tc)	12 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
AOT2910L	Alpha & Omega Semiconductor Inc.	MOSFET N CH 100V 6A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock62,376	MOSFET (Metal Oxide)	100V	6A (Ta), 30A (Tc)	4.5V, 10V	2.7V @ 250µA	25nC @ 10V	1190pF @ 50V	±20V	-	2.1W (Ta), 50W (Tc)	24 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
SIHA25N50E-E3	Vishay Siliconix	MOSFET N-CH 500V 26A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,904	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	4V @ 250µA	86nC @ 10V	1980pF @ 100V	±30V	-	35W (Tc)	145 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
CSD17484F4T	Texas Instruments	MOSFET N-CH 30V 1.5A 3PICOSTAR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.2nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V Vgs (Max): 12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 121 mOhm @ 500mA, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock3,776	MOSFET (Metal Oxide)	30V	3A (Ta)	1.8V, 8V	1.1V @ 250µA	0.2nC @ 8V	195pF @ 15V	12V	-	500mW (Ta)	121 mOhm @ 500mA, 8V	-55°C ~ 150°C (TJ)	Surface Mount	3-PICOSTAR	3-XFDFN
CMPDM202PH TR	Central Semiconductor Corp	MOSFET P-CH 20V 2.3A SOT-23F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Vgs (Max): 12V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 88 mOhm @ 1.2A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	Package: SOT-23-3 Flat Leads	Stock5,600	MOSFET (Metal Oxide)	20V	2.3A (Ta)	2.5V, 5V	1.4V @ 250µA	12nC @ 5V	800pF @ 10V	12V	-	350mW (Ta)	88 mOhm @ 1.2A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SI4800BDY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 6.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock648,240	MOSFET (Metal Oxide)	30V	6.5A (Ta)	4.5V, 10V	1.8V @ 250µA	13nC @ 5V	-	±25V	-	1.3W (Ta)	18.5 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SCT2H12NYTB	Rohm Semiconductor	1700V 1.2 OHM 4A SIC FET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4V @ 410µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 800V Vgs (Max): +22V, -6V FET Feature: - Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock18,552	MOSFET (Metal Oxide)	1700V	4A (Tc)	18V	4V @ 410µA	14nC @ 18V	184pF @ 800V	+22V, -6V	-	44W (Tc)	1.5 Ohm @ 1.1A, 18V	175°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
STP23NM60ND	STMicroelectronics	MOSFET N-CH 600V 19.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock12,552	MOSFET (Metal Oxide)	600V	19.5A (Tc)	10V	5V @ 250µA	69nC @ 10V	2100pF @ 50V	±25V	-	150W (Tc)	180 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
CSD17483F4T	Texas Instruments	MOSFET N-CH 30V 1.5A 3PICOSTAR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Vgs (Max): 12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock46,950	MOSFET (Metal Oxide)	30V	1.5A (Ta)	1.8V, 4.5V	1.1V @ 250µA	1.3nC @ 4.5V	190pF @ 15V	12V	-	500mW (Ta)	240 mOhm @ 500mA, 8V	-55°C ~ 150°C (TJ)	Surface Mount	3-PICOSTAR	3-XFDFN
R8011KNXC7G	Rohm Semiconductor	HIGH-SPEED SWITCHING NCH 800V 11 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock5,997	MOSFET (Metal Oxide)	800 V	11A (Ta)	10V	4.5V @ 5.5mA	37 nC @ 10 V	1200 pF @ 100 V	±20V	-	65W (Tc)	450mOhm @ 5.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
DMP3007LSS-13	Diodes Incorporated	MOSFET P-CH 30V 14A 8SO T&R 2 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock8,523	MOSFET (Metal Oxide)	30 V	14A (Ta)	4V, 10V	2.8V @ 250µA	64.2 nC @ 10 V	2826 pF @ 15 V	±25V	-	1.4W (Ta)	7mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMN52D0U-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT23 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	400mA (Ta)	1.8V, 5V	1V @ 250µA	1.5 nC @ 10 V	39 pF @ 25 V	±12V	-	500mW	2Ohm @ 50mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
MCAC100N08YA-TP	Micro Commercial Co	N-CHANNEL MOSFET,DFN5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 152W (Tj) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Stock29,628	MOSFET (Metal Oxide)	80 V	100A (Tc)	4.5V, 10V	2.5V @ 250µA	90 nC @ 10 V	6320 pF @ 40 V	±20V	-	152W (Tj)	4.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
SQ7414CENW-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 18A PPAK1212-8W FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8W Package / Case: PowerPAK® 1212-8W	Package: -	Stock77,259	MOSFET (Metal Oxide)	60 V	18A (Tc)	4.5V, 10V	2.5V @ 250µA	25 nC @ 10 V	1590 pF @ 30 V	±20V	-	62W (Tc)	23mOhm @ 8.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 1212-8W	PowerPAK® 1212-8W
STF16N90K5	STMicroelectronics	MOSFET N-CH 900V 15A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 29.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1027 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Stock111	MOSFET (Metal Oxide)	900 V	15A (Tc)	10V	5V @ 100µA	29.7 nC @ 10 V	1027 pF @ 100 V	±30V	-	30W (Tc)	330mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
PJD2NA70_L2_00001	Panjit International Inc.	700V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	700 V	2A (Ta)	10V	4V @ 250µA	7.8 nC @ 10 V	260 pF @ 25 V	±30V	-	39W (Tc)	6.5Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMN4020LFDEQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V U-DFN2020- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1201 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-PowerUDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	8.6A (Ta)	4.5V, 10V	2.4V @ 250µA	25.3 nC @ 10 V	1201 pF @ 20 V	±20V	-	850mW (Ta)	21mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type E)	6-PowerUDFN
IPWS65R075CFD7AXKSA1	Infineon Technologies	MOSFET N-CH 650V 32A TO247-3-41 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 820µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	32A (Tc)	10V	4.5V @ 820µA	68 nC @ 10 V	3288 pF @ 400 V	±20V	-	171W (Tc)	75mOhm @ 16.4A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
NVTFS015N04CTAG	onsemi	MOSFET N-CH 40V 9.4A/27A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Stock12	MOSFET (Metal Oxide)	40 V	9.4A (Ta), 27A (Tc)	10V	3.5V @ 20µA	6.3 nC @ 10 V	325 pF @ 25 V	±20V	-	2.9W (Ta), 23W (Tc)	17.3mOhm @ 7.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
MCU80N03-TP	Micro Commercial Co	MOSFET N-CH 30V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock26,793	MOSFET (Metal Oxide)	30 V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	28 nC @ 10 V	1600 pF @ 15 V	±20V	-	70W (Tc)	4mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63