Page 640 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSB012NE2LX
Infineon Technologies

MOSFET N-CH 25V 170A WDSON-2

Package: 3-WDSON

Stock21,480
2N7002 L6327
Infineon Technologies

MOSFET N-CH 60V 300MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock76,656
AOD4102L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock555,120
NP89N055MUK-S18-AY
Renesas Electronics America

MOSFET N-CH 55V 90A TO-220

Package: TO-220-3

Stock4,992
HAT2172H-EL-E
Renesas Electronics America

MOSFET N-CH 40V 30A LFPAK

Package: SC-100, SOT-669

Stock133,044
BUK78150-55A,135
NXP

MOSFET N-CH 55V 5.5A SOT223

Package: TO-261-4, TO-261AA

Stock7,616
FQAF15N70
Fairchild/ON Semiconductor

MOSFET N-CH 700V 9.5A TO-3PF

Package: SC-94

Stock7,312
FQA11N90C
Fairchild/ON Semiconductor

MOSFET N-CH 900V 11A TO-3P

Package: TO-3P-3, SC-65-3

Stock512,484
2SJ377(TE16R1,NQ)
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 5A PW-MOLD

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,928
IPB60R099CPAATMA1
Infineon Technologies

MOSFET N-CH 600V 31A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,104
IXFK100N65X2
IXYS

MOSFET N-CH 650V 100A TO-264

Package: TO-264-3, TO-264AA

Stock103,464
CSD17309Q3
Texas Instruments

MOSFET N-CH 30V 60A 8SON

Package: 8-PowerTDFN

Stock8,556
IRF3710LPBF
Infineon Technologies

MOSFET N-CH 100V 57A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock10,524
IRLS640A
Fairchild/ON Semiconductor

MOSFET N-CH 200V 9.8A TO-220F

Package: TO-220-3 Full Pack

Stock7,956
BSZ0901NSI
Infineon Technologies

MOSFET N-CH 30V 40A TSDSON

Package: 8-PowerTDFN

Stock7,936
STB80NF55-06T4
STMicroelectronics

MOSFET N-CH 55V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock79,716
CSD16323Q3C
Texas Instruments

MOSFET N-CH 25V 60A 8SON

Package: 8-PowerTDFN

Stock6,096
IXFK240N15T2
IXYS

MOSFET N-CH 150V 240A TO264

Package: TO-264-3, TO-264AA

Stock9,372
FDC642P-F085P
onsemi

MOSFET P-CH 20V 4A TSOT23-6

Package: -

Request a Quote
DMP6185SEQ-13
Diodes Incorporated

MOSFET P-CHANNEL 60V 3A SOT223

Package: -

Stock9,960

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSB012NE2LX	Infineon Technologies	MOSFET N-CH 25V 170A WDSON-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M? Package / Case: 3-WDSON	Package: 3-WDSON	Stock21,480	MOSFET (Metal Oxide)	25V	37A (Ta), 170A (Tc)	4.5V, 10V	2V @ 250µA	67nC @ 10V	4900pF @ 12V	±20V	-	2.8W (Ta), 57W (Tc)	1.2 mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	MG-WDSON-2, CanPAK M?	3-WDSON
2N7002 L6327	Infineon Technologies	MOSFET N-CH 60V 300MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock76,656	MOSFET (Metal Oxide)	60V	300mA (Ta)	4.5V, 10V	2.5V @ 250µA	0.6nC @ 10V	20pF @ 25V	±20V	-	500mW (Ta)	3 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
AOD4102L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.2W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock555,120	MOSFET (Metal Oxide)	30V	8A (Ta), 19A (Tc)	4.5V, 10V	3V @ 250µA	8.1nC @ 10V	432pF @ 15V	±20V	-	4.2W (Ta), 21W (Tc)	37 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
NP89N055MUK-S18-AY	Renesas Electronics America	MOSFET N-CH 55V 90A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 147W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 45A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,992	MOSFET (Metal Oxide)	55V	90A (Tc)	10V	4V @ 250µA	102nC @ 10V	6000pF @ 25V	±20V	-	1.8W (Ta), 147W (Tc)	4.4 mOhm @ 45A, 10V	175°C (TJ)	Through Hole	TO-220-3	TO-220-3
HAT2172H-EL-E	Renesas Electronics America	MOSFET N-CH 40V 30A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock133,044	MOSFET (Metal Oxide)	40V	30A (Ta)	7V, 10V	3V @ 1mA	32nC @ 10V	2420pF @ 10V	±20V	-	20W (Tc)	7.5 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
BUK78150-55A,135	NXP	MOSFET N-CH 55V 5.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock7,616	MOSFET (Metal Oxide)	55V	5.5A (Tc)	10V	4V @ 1mA	-	230pF @ 25V	±20V	-	8W (Tc)	150 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
FQAF15N70	Fairchild/ON Semiconductor	MOSFET N-CH 700V 9.5A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 560 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock7,312	MOSFET (Metal Oxide)	700V	9.5A (Tc)	10V	5V @ 250µA	90nC @ 10V	3600pF @ 25V	±30V	-	120W (Tc)	560 mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
FQA11N90C	Fairchild/ON Semiconductor	MOSFET N-CH 900V 11A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock512,484	MOSFET (Metal Oxide)	900V	11A (Tc)	10V	5V @ 250µA	80nC @ 10V	3290pF @ 25V	±30V	-	300W (Tc)	1.1 Ohm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
2SJ377(TE16R1,NQ)	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 5A PW-MOLD FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PW-MOLD Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,928	MOSFET (Metal Oxide)	60V	5A (Ta)	4V, 10V	2V @ 1mA	22nC @ 10V	630pF @ 10V	±20V	-	20W (Tc)	190 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	PW-MOLD	TO-252-3, DPak (2 Leads + Tab), SC-63
IPB60R099CPAATMA1	Infineon Technologies	MOSFET N-CH 600V 31A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,104	MOSFET (Metal Oxide)	600V	31A (Tc)	10V	3.5V @ 1.2mA	80nC @ 10V	2800pF @ 100V	±20V	-	255W (Tc)	105 mOhm @ 18A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFK100N65X2	IXYS	MOSFET N-CH 650V 100A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock103,464	MOSFET (Metal Oxide)	650V	100A (Tc)	10V	5.5V @ 4mA	180nC @ 10V	11300pF @ 25V	±30V	-	1040W (Tc)	30 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
CSD17309Q3	Texas Instruments	MOSFET N-CH 30V 60A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 15V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 2.8W (Ta) Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 18A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (3.3x3.3) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock8,556	MOSFET (Metal Oxide)	30V	20A (Ta), 60A (Tc)	3V, 8V	1.7V @ 250µA	10nC @ 4.5V	1440pF @ 15V	+10V, -8V	-	2.8W (Ta)	5.4 mOhm @ 18A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (3.3x3.3)	8-PowerTDFN
IRF3710LPBF	Infineon Technologies	MOSFET N-CH 100V 57A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock10,524	MOSFET (Metal Oxide)	100V	57A (Tc)	10V	4V @ 250µA	130nC @ 10V	3130pF @ 25V	±20V	-	200W (Tc)	23 mOhm @ 28A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRLS640A	Fairchild/ON Semiconductor	MOSFET N-CH 200V 9.8A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 4.9A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,956	MOSFET (Metal Oxide)	200V	9.8A (Tc)	5V	2V @ 250µA	56nC @ 5V	1705pF @ 25V	±20V	-	40W (Tc)	180 mOhm @ 4.9A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
BSZ0901NSI	Infineon Technologies	MOSFET N-CH 30V 40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,936	MOSFET (Metal Oxide)	30V	25A (Ta), 40A (Tc)	4.5V, 10V	2.2V @ 250µA	41nC @ 10V	2600pF @ 15V	±20V	Schottky Diode (Body)	2.1W (Ta), 69W (Tc)	2.1 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
STB80NF55-06T4	STMicroelectronics	MOSFET N-CH 55V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock79,716	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	189nC @ 10V	4400pF @ 25V	±20V	-	300W (Tc)	6.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
CSD16323Q3C	Texas Instruments	MOSFET N-CH 25V 60A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 12.5V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 24A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SON Exposed Pad (3x3) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,096	MOSFET (Metal Oxide)	25V	21A (Ta), 60A (Tc)	3V, 8V	1.4V @ 250µA	8.4nC @ 4.5V	1300pF @ 12.5V	+10V, -8V	-	3W (Ta)	4.5 mOhm @ 24A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	8-SON Exposed Pad (3x3)	8-PowerTDFN
IXFK240N15T2	IXYS	MOSFET N-CH 150V 240A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 32000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock9,372	MOSFET (Metal Oxide)	150V	240A (Tc)	10V	5V @ 8mA	460nC @ 10V	32000pF @ 25V	±20V	-	1250W (Tc)	5.2 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
FDC642P-F085P	onsemi	MOSFET P-CH 20V 4A TSOT23-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-23-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	4A (Ta)	2.5V, 4.5V	1.5V @ 250µA	9 nC @ 4.5 V	630 pF @ 10 V	±8V	-	1.2W (Ta)	65mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-23-6	SOT-23-6 Thin, TSOT-23-6
DMP6185SEQ-13	Diodes Incorporated	MOSFET P-CHANNEL 60V 3A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-3 Package / Case: TO-261-4, TO-261AA	Package: -	Stock9,960	MOSFET (Metal Oxide)	60 V	3A (Ta)	4.5V, 10V	3V @ 250µA	14 nC @ 10 V	708 pF @ 30 V	±20V	-	2.2W (Ta)	150mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
MCT06P10-TP	Micro Commercial Co	MOSFET P-CH 100V 6A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W Rds On (Max) @ Id, Vgs: 205mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock84,528	MOSFET (Metal Oxide)	100 V	6A (Tj)	4.5V, 10V	2.8V @ 250µA	25 nC @ 10 V	760 pF @ 25 V	±20V	-	1.25W	205mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
RSS100N03FRATB	Rohm Semiconductor	MOSFET N-CH 30V 10A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock7,230	MOSFET (Metal Oxide)	30 V	10A (Ta)	4V, 10V	2.5V @ 1mA	20 nC @ 5 V	1070 pF @ 10 V	±20V	-	2W (Ta)	13.3mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
BSS123_R1_00001	Panjit International Inc.	SOT-23, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock38,415	MOSFET (Metal Oxide)	100 V	170mA (Ta)	4.5V, 10V	2.5V @ 250µA	1.8 nC @ 10 V	45 pF @ 25 V	±20V	-	500mW (Ta)	6Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
G080N10M	Goford Semiconductor	MOSFET N-CH 100V 180A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13950 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,940	MOSFET (Metal Oxide)	100 V	180A (Tc)	4.5V, 10V	2.5V @ 250µA	107 nC @ 4.5 V	13950 pF @ 50 V	±20V	-	370W (Tc)	7.5mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMP2037UFCL-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V U-DFN1616-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN1616-6 (Type K) Package / Case: 6-PowerUFDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	8A (Ta)	2.5V, 4.5V	1.5V @ 250µA	16.5 nC @ 8 V	806 pF @ 10 V	±10V	-	1.1W (Ta)	28mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN1616-6 (Type K)	6-PowerUFDFN
UF4SC120030B7S	Qorvo	1200V/30MO,SICFET,G4,TO263-7 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPDQ65R125CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	4.5V @ 390µA	32 nC @ 10 V	1566 pF @ 400 V	±20V	-	160W (Tc)	125mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
DMN31D5UFZQ-7B	Diodes Incorporated	MOSFET BVDSS: 25V~30V X2-DFN0606 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 22.6 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN0606-3 Package / Case: 3-XFDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	410mA (Ta)	1.5V, 4.5V	1V @ 250µA	0.38 nC @ 4.5 V	22.6 pF @ 15 V	±12V	-	400mW (Ta)	1.5Ohm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN0606-3	3-XFDFN