Page 645 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7703TRPBF
Infineon Technologies

MOSFET P-CH 40V 6A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock4,256
IRLR8113TRRPBF
Infineon Technologies

MOSFET N-CH 30V 94A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,464
SPP11N60S5HKSA1
Infineon Technologies

MOSFET N-CH 650V 11A TO-220AB

Package: TO-220-3

Stock7,440
RRS110N03TB1
Rohm Semiconductor

MOSFET N-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,352
HAT2143H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 40A 5LFPAK

Package: SC-100, SOT-669

Stock6,208
AOTF25S65
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 25A TO220F

Package: TO-220-3 Full Pack

Stock3,568
FDPF10N50FT
Fairchild/ON Semiconductor

MOSFET N-CH 500V 9A TO-220F

Package: TO-220-3 Full Pack

Stock17,160
VP3203N3-G
Microchip Technology

MOSFET P-CH 30V 650MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock10,560
FDBL0150N60
Fairchild/ON Semiconductor

MOSFET N-CH 60V 300A

Package: 8-PowerSFN

Stock4,928
SIR892DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 50A PPAK SO-8

Package: PowerPAK? SO-8

Stock5,376
ZXMN6A08KTC
Diodes Incorporated

MOSFET N-CH 60V 5.36A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock247,500
FDMS7580
Fairchild/ON Semiconductor

MOSFET N-CH 25V 15A POWER56

Package: 8-PowerTDFN

Stock15,708
IRFR024TRPBF
Vishay Siliconix

MOSFET N-CH 60V 14A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock84,000
STF12NK60Z
STMicroelectronics

MOSFET N-CH 600V 10A TO220FP

Package: TO-220-3 Full Pack

Stock22,368
NTB45N06T4G
ON Semiconductor

MOSFET N-CH 60V 45A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock450,216
SI5419DU-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 12A PPAK CHIPFET

Package: 8-PowerVDFN

Stock17,148
NTE2383
NTE Electronics, Inc

MOSFET P-CH 100V 10.5A TO220

Package: -

Request a Quote
SIL03N10-TP
Micro Commercial Co

MOSFET N-CH 100V 3A SOT23-6L

Package: -

Request a Quote
PSMN1R7-40YLBX
Nexperia USA Inc.

PSMN1R7-40YLB/SOT669/LFPAK

Package: -

Request a Quote
DMP2070U-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 1

Package: -

Stock29,964

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7703TRPBF	Infineon Technologies	MOSFET P-CH 40V 6A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock4,256	MOSFET (Metal Oxide)	40V	6A (Ta)	4.5V, 10V	3V @ 250µA	62nC @ 4.5V	5220pF @ 25V	±20V	-	1.5W (Ta)	28 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IRLR8113TRRPBF	Infineon Technologies	MOSFET N-CH 30V 94A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2920pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,464	MOSFET (Metal Oxide)	30V	94A (Tc)	4.5V, 10V	2.25V @ 250µA	32nC @ 4.5V	2920pF @ 15V	±20V	-	89W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SPP11N60S5HKSA1	Infineon Technologies	MOSFET N-CH 650V 11A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock7,440	MOSFET (Metal Oxide)	650V	11A (Tc)	10V	5.5V @ 500µA	54nC @ 10V	1460pF @ 25V	±20V	-	125W (Tc)	380 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
RRS110N03TB1	Rohm Semiconductor	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,352	MOSFET (Metal Oxide)	30V	11A (Ta)	4V, 10V	2.5V @ 1mA	33nC @ 5V	2000pF @ 10V	±20V	-	2W (Ta)	12.6 mOhm @ 11A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
HAT2143H-EL-E	Renesas Electronics America	MOSFET N-CH 30V 40A 5LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,208	MOSFET (Metal Oxide)	30V	40A (Ta)	4.5V, 10V	-	40nC @ 10V	2450pF @ 10V	±20V	-	20W (Tc)	6.1 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
AOTF25S65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 25A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1278pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,568	MOSFET (Metal Oxide)	650V	25A (Tc)	10V	4V @ 250µA	26.4nC @ 10V	1278pF @ 100V	±30V	-	50W (Tc)	190 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
FDPF10N50FT	Fairchild/ON Semiconductor	MOSFET N-CH 500V 9A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,160	MOSFET (Metal Oxide)	500V	9A (Tc)	10V	5V @ 250µA	24nC @ 10V	1170pF @ 25V	±30V	-	42W (Tc)	850 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
VP3203N3-G	Microchip Technology	MOSFET P-CH 30V 650MA TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 650mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock10,560	MOSFET (Metal Oxide)	30V	650mA (Tj)	4.5V, 10V	3.5V @ 10mA	-	300pF @ 25V	±20V	-	740mW (Ta)	600 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
FDBL0150N60	Fairchild/ON Semiconductor	MOSFET N-CH 60V 300A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 169nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tj) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock4,928	MOSFET (Metal Oxide)	60V	240A (Tc)	10V	4V @ 250µA	169nC @ 10V	10300pF @ 30V	±20V	-	357W (Tj)	1.5 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PSOF	8-PowerSFN
SIR892DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 50A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2645pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock5,376	MOSFET (Metal Oxide)	25V	50A (Tc)	4.5V, 10V	2.6V @ 250µA	60nC @ 10V	2645pF @ 10V	±20V	-	5W (Ta), 50W (Tc)	3.2 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
ZXMN6A08KTC	Diodes Incorporated	MOSFET N-CH 60V 5.36A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.36A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 459pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.12W (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock247,500	MOSFET (Metal Oxide)	60V	5.36A (Ta)	4.5V, 10V	3V @ 250µA	5.8nC @ 10V	459pF @ 40V	±20V	-	2.12W (Ta)	80 mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS7580	Fairchild/ON Semiconductor	MOSFET N-CH 25V 15A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock15,708	MOSFET (Metal Oxide)	25V	15A (Ta), 29A (Tc)	4.5V, 10V	3V @ 250µA	20nC @ 10V	1190pF @ 13V	±20V	-	2.5W (Ta), 27W (Tc)	7.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
IRFR024TRPBF	Vishay Siliconix	MOSFET N-CH 60V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock84,000	MOSFET (Metal Oxide)	60V	14A (Tc)	10V	4V @ 250µA	25nC @ 10V	640pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	100 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STF12NK60Z	STMicroelectronics	MOSFET N-CH 600V 10A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 640 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock22,368	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4.5V @ 100µA	59nC @ 10V	1740pF @ 25V	±30V	-	35W (Tc)	640 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
NTB45N06T4G	ON Semiconductor	MOSFET N-CH 60V 45A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Rds On (Max) @ Id, Vgs: 26 mOhm @ 22.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock450,216	MOSFET (Metal Oxide)	60V	45A (Ta)	10V	4V @ 250µA	46nC @ 10V	1725pF @ 25V	±20V	-	2.4W (Ta), 125W (Tj)	26 mOhm @ 22.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI5419DU-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 12A PPAK CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PowerPak? ChipFet (3x1.9) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock17,148	MOSFET (Metal Oxide)	30V	12A (Tc)	4.5V, 10V	2.5V @ 250µA	45nC @ 10V	1400pF @ 15V	±20V	-	3.1W (Ta), 31W (Tc)	20 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerPak? ChipFet (3x1.9)	8-PowerVDFN
NTE2383	NTE Electronics, Inc	MOSFET P-CH 100V 10.5A TO220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	10.5A (Tc)	10V	4V @ 250µA	58 nC @ 10 V	835 pF @ 25 V	±20V	-	75W (Tc)	300mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
SIL03N10-TP	Micro Commercial Co	MOSFET N-CH 100V 3A SOT23-6L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6L Package / Case: SOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	3A (Ta)	4.5V, 10V	2.5V @ 250µA	19.2 nC @ 10 V	810 pF @ 50 V	±20V	-	1.5W	120mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6L	SOT-23-6
PSMN1R7-40YLBX	Nexperia USA Inc.	PSMN1R7-40YLB/SOT669/LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.05V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8138 pF @ 20 V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 194W (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	200A (Ta)	4.5V, 10V	2.05V @ 1mA	111 nC @ 10 V	8138 pF @ 20 V	±20V	Schottky Diode (Body)	194W (Ta)	1.8mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
DMP2070U-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT23 T&R 1 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 830mW Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock29,964	MOSFET (Metal Oxide)	20 V	4.6A (Tc)	1.8V, 4.5V	950mV @ 250µA	8.2 nC @ 10 V	118 pF @ 10 V	±8V	-	830mW	44mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IPW90R340C3XKSA1	Infineon Technologies	MOSFET N-CH 900V 15A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-21 Package / Case: TO-247-3	Package: -	Stock144	MOSFET (Metal Oxide)	900 V	15A (Tc)	10V	3.5V @ 1mA	94 nC @ 10 V	2400 pF @ 100 V	±20V	-	208W (Tc)	340mOhm @ 9.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-21	TO-247-3
DMTH69M8LFVWQ-13	Diodes Incorporated	MOSFET BVDSS: 41V-60V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	15.9A (Ta), 45.4A (Tc)	4.5V, 10V	3V @ 250µA	33.5 nC @ 10 V	1925 pF @ 30 V	±16V	-	3.6W (Ta), 29.4W (Tc)	9.5mOhm @ 13.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
NTPF095N65S3H	onsemi	POWER MOSFET, N-CHANNEL, SUPERFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.8mA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Stock105	MOSFET (Metal Oxide)	650 V	30A (Tj)	10V	4V @ 2.8mA	58 nC @ 10 V	2833 pF @ 400 V	±30V	-	40W (Tc)	95mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
BSS138HE3-TP	Micro Commercial Co	N-CHANNEL MOSFET SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 220mA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW Rds On (Max) @ Id, Vgs: 2.5Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	220mA	4.5V, 10V	1.5V @ 250µA	-	60 pF @ 25 V	±20V	-	350mW	2.5Ohm @ 220mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
BSR802NL6327HTSA1	Infineon Technologies	MOSFET N-CH 20V 3.7A SC59 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Vgs(th) (Max) @ Id: 750mV @ 30µA Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 1447 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 2.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SC59-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock381,432	MOSFET (Metal Oxide)	20 V	3.7A (Ta)	1.8V, 2.5V	750mV @ 30µA	4.7 nC @ 2.5 V	1447 pF @ 10 V	±8V	-	500mW (Ta)	23mOhm @ 3.7A, 2.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SC59-3	TO-236-3, SC-59, SOT-23-3
HAT1047RWS-E	Renesas Electronics Corporation	MOSFET P-CH 30V 14A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	14A (Ta)	4.5V, 10V	2.5V @ 1mA	64 nC @ 10 V	3500 pF @ 10 V	±20V	-	2.5W (Ta)	12mOhm @ 7A, 10V	150°C	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
MCH6423-TL-E	onsemi	NCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJA3416-AU_R1_000A1	Panjit International Inc.	20V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock5,070	MOSFET (Metal Oxide)	20 V	5.8A (Ta)	1.8V, 4.5V	1.2V @ 250µA	6.7 nC @ 4.5 V	513 pF @ 10 V	±12V	-	1.25W (Ta)	27mOhm @ 5.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3