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Infineon Technologies |
MOSFET N-CH 80V 26A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3186pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4W (Ta), 195W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: -
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-VQFN
|
Package: 8-VQFN |
Stock4,720 |
|
MOSFET (Metal Oxide) | 80V | 26A (Ta) | 10V | 3.6V @ 250µA | 74nC @ 10V | 3186pF @ 40V | ±20V | - | 4W (Ta), 195W (Tc) | 3.1 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | - | 8-PQFN (5x6) | 8-VQFN |
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Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,640 |
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MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 250µA | 220nC @ 10V | 8180pF @ 25V | ±20V | - | 300W (Tc) | 2.8 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 40V 82A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 41A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3,600 |
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MOSFET (Metal Oxide) | 40V | 82A (Tc) | 10V | 4V @ 250µA | 160nC @ 10V | 9750pF @ 25V | ±20V | - | 1.8W (Ta), 143W (Tc) | 4.2 mOhm @ 41A, 10V | 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 30V 8.6A 8TSSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 600mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.08W (Ta)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
|
Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock7,872 |
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MOSFET (Metal Oxide) | 30V | 8.6A (Ta) | 2.5V, 10V | 600mV @ 250µA | 48nC @ 4.5V | - | ±12V | - | 1.08W (Ta) | 9 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MV POWER MOS
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock2,832 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V TO262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock6,016 |
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MOSFET (Metal Oxide) | 100V | 70A (Tc) | 6V, 10V | 3.4V @ 250µA | 52nC @ 10V | 2785pF @ 50V | ±20V | - | 104W (Tc) | 9.7 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 25V 40A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock180,000 |
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MOSFET (Metal Oxide) | 25V | 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 161nC @ 10V | 6670pF @ 15V | ±16V | - | 3.5W (Ta), 7.8W (Tc) | 2.7 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 40V SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
- Rds On (Max) @ Id, Vgs: 10.3 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock3,600 |
|
MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 2V @ 250µA | 7.3nC @ 10V | 570pF @ 25V | ±20V | - | 3.5W (Ta), 28W (Tc) | 10.3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 30V 2A SCH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 172pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-SCH
- Package / Case: SOT-563, SOT-666
|
Package: SOT-563, SOT-666 |
Stock7,776 |
|
MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | - | 3.9nC @ 10V | 172pF @ 10V | ±20V | - | 800mW (Ta) | 150 mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | 6-SCH | SOT-563, SOT-666 |
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STMicroelectronics |
MOSFET N-CH 650V 7.5A POWERFLAT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 718pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 56W (Tc)
- Rds On (Max) @ Id, Vgs: 395 mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (5x6)
- Package / Case: 8-PowerVDFN
|
Package: 8-PowerVDFN |
Stock2,736 |
|
MOSFET (Metal Oxide) | 650V | 7.5A (Tc) | 10V | 4V @ 250µA | 19.5nC @ 10V | 718pF @ 100V | ±25V | - | 56W (Tc) | 395 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
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|
Infineon Technologies |
MOSFET P-CH 100V 23A TO262-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 117 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock15,600 |
|
MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 1450pF @ 25V | ±20V | - | 3.1W (Ta), 110W (Tc) | 117 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 55V 35A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 93W (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock18,516 |
|
MOSFET (Metal Oxide) | 55V | 35A (Tc) | 10V | 4V @ 250µA | 44nC @ 20V | 680pF @ 25V | ±20V | - | 93W (Tc) | 34 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 74A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 74A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 35W (Tc)
- Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 37A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3 Fullpack/TO-220F-3SG
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock7,044 |
|
MOSFET (Metal Oxide) | 60V | 74A (Ta) | 4V, 10V | 2.6V @ 1mA | 135nC @ 10V | 6900pF @ 20V | ±20V | - | 2W (Ta), 35W (Tc) | 6.1 mOhm @ 37A, 10V | 150°C (TJ) | Through Hole | TO-220-3 Fullpack/TO-220F-3SG | TO-220-3 Full Pack |
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Nexperia USA Inc. |
MOSFET N-CH 30V 100A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2939pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 91W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock7,920 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.2V @ 1mA | 46.4nC @ 10V | 2939pF @ 15V | ±20V | - | 91W (Tc) | 3.1 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 800V 1A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 20 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock116,388 |
|
MOSFET (Metal Oxide) | 800V | 1A (Tc) | 10V | 5V @ 250µA | 7.2nC @ 10V | 195pF @ 25V | ±30V | - | 2.5W (Ta), 45W (Tc) | 20 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Rohm Semiconductor |
NCH 30V 4.5A MIDDLE POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 23.7 mOhm @ 4.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TUMT6
- Package / Case: 6-SMD, Flat Leads
|
Package: 6-SMD, Flat Leads |
Stock36,000 |
|
MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | 4.5V | 1.5V @ 1mA | 8.1nC @ 4.5V | 900pF @ 15V | ±12V | - | 1W (Tc) | 23.7 mOhm @ 4.5A, 4.5V | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
|
|
Infineon Technologies |
MOSFET N-CH 30V 4.6A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock13,308 |
|
MOSFET (Metal Oxide) | 30V | 4.6A (Ta) | 4.5V, 10V | 1V @ 250µA | 50nC @ 10V | 840pF @ 25V | ±16V | - | 1W (Ta) | 31 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
STMicroelectronics |
MOSFET N-CH 400V 5.6A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 790 mOhm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock52,176 |
|
MOSFET (Metal Oxide) | 400V | 5.6A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 365pF @ 50V | ±25V | - | 60W (Tc) | 790 mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Infineon Technologies |
MOSFET N-CH 40V 40A TSDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
- Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock578,658 |
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MOSFET (Metal Oxide) | 40V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 14µA | 24nC @ 10V | 1900pF @ 20V | ±20V | - | 2.1W (Ta), 35W (Tc) | 9.7 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 300MA SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,214,652 |
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MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 5V, 10V | 2.5V @ 1mA | - | 50pF @ 25V | ±20V | - | 350mW (Ta) | 2 Ohm @ 500mA, 10V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 40V 45A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,400 |
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MOSFET (Metal Oxide) | 40 V | 45A (Tc) | 10V | 3V @ 1mA | 43 nC @ 10 V | 2400 pF @ 25 V | ±20V | - | 50W (Tc) | 13.5mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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onsemi |
SICFET N-CH 1200V 102A TO247
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
- Vgs (Max): +25V, -15V
- FET Feature: -
- Power Dissipation (Max): 510W (Tc)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Stock2,898 |
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SiCFET (Silicon Carbide) | 1200 V | 102A (Tc) | 20V | 4.3V @ 20mA | 220 nC @ 20 V | 2943 pF @ 800 V | +25V, -15V | - | 510W (Tc) | 28mOhm @ 60A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Renesas Electronics Corporation |
MOSFET N-CH 600V 20A 4LDPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LDPAK
- Package / Case: SC-83
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 20A (Tc) | - | - | 27 nC @ 10 V | 1600 pF @ 25 V | - | - | 125W (Tc) | 178mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | LDPAK | SC-83 |
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Microchip Technology |
SICFET N-CH 700V D3PAK
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
Stock309 |
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SiCFET (Silicon Carbide) | 700 V | 25A (Tc) | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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onsemi |
MOSFET N-CH 250V 7.4A TO252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
- Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 250 V | 7.4A (Tc) | 10V | 5V @ 250µA | 20 nC @ 10 V | 700 pF @ 25 V | ±30V | - | 2.5W (Ta), 55W (Tc) | 420mOhm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 12.7/18.3A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
- Vgs (Max): +16V, -20V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock37,623 |
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MOSFET (Metal Oxide) | 30 V | 12.7A (Ta), 18.3A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 41 nC @ 10 V | 1620 pF @ 15 V | +16V, -20V | - | 2.3W (Ta), 4.8W (Tc) | 9.5mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Micro Commercial Co |
SCHOTTKY DIODES
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 3.5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 2225 pF @ 1000 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 390W (Tc)
- Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AB
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tc) | 20V | 3.5V @ 10mA | 120 nC @ 20 V | 2225 pF @ 1000 V | +25V, -10V | - | 390W (Tc) | 52mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 8.8A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock10,494 |
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MOSFET (Metal Oxide) | 60 V | 8.8A (Tc) | 10V | 4V @ 250µA | 19 nC @ 10 V | 570 pF @ 25 V | ±20V | - | 2.5W (Ta), 42W (Tc) | 280mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |