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Infineon Technologies |
MOSFET N-CH 30V 5.7A 8DSO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-8
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock15,348 |
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MOSFET (Metal Oxide) | 30V | 5.7A (Ta) | 4.5V, 10V | 2V @ 8µA | 4.6nC @ 5V | 600pF @ 15V | ±20V | - | 1.56W (Ta) | 30 mOhm @ 7.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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|
Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 27A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MX
- Package / Case: DirectFET? Isometric MX
|
Package: DirectFET? Isometric MX |
Stock5,600 |
|
MOSFET (Metal Oxide) | 30V | 32A (Ta), 150A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 56nC @ 4.5V | 4860pF @ 15V | ±20V | - | 3.9W (Ta), 89W (Tc) | 2.6 mOhm @ 27A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
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|
Infineon Technologies |
MOSFET N-CH 100V 370MA SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.79W (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 370mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock4,336 |
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MOSFET (Metal Oxide) | 100V | 370mA (Ta) | 2.8V, 10V | 1.8V @ 50µA | 2.4nC @ 10V | 70pF @ 25V | ±20V | - | 1.79W (Ta) | 6 Ohm @ 370mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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|
Infineon Technologies |
MOSFET N-CH 30V 7.3A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock357,780 |
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MOSFET (Metal Oxide) | 30V | 7.3A (Tc) | 4.5V, 10V | 1V @ 250µA | 28nC @ 10V | 550pF @ 25V | ±20V | - | 2.5W (Tc) | 30 mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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|
Global Power Technologies Group |
MOSFET N-CH 650V 1.8A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 17.3W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6 Ohm @ 900mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock5,760 |
|
MOSFET (Metal Oxide) | 650V | 1.8A (Tc) | 10V | 5V @ 250µA | 8.5nC @ 10V | 353pF @ 25V | ±30V | - | 17.3W (Tc) | 4.6 Ohm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 1A SC-62
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 730 mOhm @ 500mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PW-MINI
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock21,480 |
|
MOSFET (Metal Oxide) | 60V | 1A (Ta) | 4V, 10V | 2V @ 1mA | 6.5nC @ 10V | 155pF @ 10V | ±20V | - | 500mW (Ta) | 730 mOhm @ 500mA, 10V | 150°C (TJ) | Surface Mount | PW-MINI | TO-243AA |
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|
ON Semiconductor |
MOSFET P-CH 30V 1.13A SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400mW (Tj)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.95A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock109,872 |
|
MOSFET (Metal Oxide) | 30V | 1.13A (Ta) | 4.5V, 10V | 3V @ 250µA | 10nC @ 10V | 200pF @ 15V | ±20V | - | 400mW (Tj) | 200 mOhm @ 1.95A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 60V 45A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 125W (Tj)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 22.5A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock450,072 |
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MOSFET (Metal Oxide) | 60V | 45A (Ta) | 5V | 2V @ 250µA | 32nC @ 5V | 1700pF @ 25V | ±15V | - | 2.4W (Ta), 125W (Tj) | 28 mOhm @ 22.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 55V 75A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 275nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 325W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,320 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 275nC @ 20V | 4000pF @ 25V | ±20V | - | 325W (Tc) | 7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
Rohm Semiconductor |
MOSFET N-CH 100V 5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 220 mOhm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: CPT3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock450,012 |
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MOSFET (Metal Oxide) | 100V | 5A (Ta) | 4V, 10V | 2.5V @ 1mA | - | 520pF @ 10V | ±20V | - | 20W (Tc) | 220 mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
ON Semiconductor |
MOSFET P-CH 30V 2.34A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.34A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 24V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 730mW (Ta)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,336 |
|
MOSFET (Metal Oxide) | 30V | 2.34A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 25nC @ 10V | 750pF @ 24V | ±20V | - | 730mW (Ta) | 85 mOhm @ 3.05A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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|
Infineon Technologies |
MOSFET N-CHANNEL_55/60V
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock5,088 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild/ON Semiconductor |
FCP16N60N IN TO220 F102 T/F OPTI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 134.4W (Tc)
- Rds On (Max) @ Id, Vgs: 199 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock6,464 |
|
MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 4V @ 250µA | 52.3nC @ 10V | 2170pF @ 100V | ±30V | - | 134.4W (Tc) | 199 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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|
Diodes Incorporated |
MOSFET NCH 60V 130A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2596pF @ 30V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock5,648 |
|
MOSFET (Metal Oxide) | 60V | 130A (Tc) | 10V | 4V @ 250µA | 21nC @ 10V | 2596pF @ 30V | 20V | - | 210W (Tc) | 8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
Vishay Siliconix |
MOSFET N-CH 12V 9A SC75-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-75-6L Single
- Package / Case: PowerPAK? SC-75-6L
|
Package: PowerPAK? SC-75-6L |
Stock5,056 |
|
MOSFET (Metal Oxide) | 12V | 9A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 20nC @ 8V | 725pF @ 6V | ±8V | - | 2.4W (Ta), 13W (Tc) | 20 mOhm @ 6.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-75-6L Single | PowerPAK? SC-75-6L |
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|
ON Semiconductor |
MOSFET N-CH 50V 0.1A MCP3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6.2pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-MCP
- Package / Case: SC-70, SOT-323
|
Package: SC-70, SOT-323 |
Stock1,028,880 |
|
MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 4V, 10V | - | 1.4nC @ 10V | 6.2pF @ 10V | ±20V | - | 150mW (Ta) | 7.5 Ohm @ 50mA, 10V | 150°C (TJ) | Surface Mount | 3-MCP | SC-70, SOT-323 |
|
|
Rohm Semiconductor |
2.5V DRIVE NCH MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: EMT3F (SOT-416FL)
- Package / Case: SC-89, SOT-490
|
Package: SC-89, SOT-490 |
Stock5,344 |
|
MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 10V | 2.3V @ 1mA | - | 15pF @ 25V | ±20V | - | 150W (Tc) | 2.4 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | EMT3F (SOT-416FL) | SC-89, SOT-490 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 12A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1930pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 540 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock15,408 |
|
MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 5V @ 250µA | 39nC @ 10V | 1930pF @ 25V | ±30V | - | 42W (Tc) | 540 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
STMicroelectronics |
MOSFET N-CH 525V 6.2A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 525V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 737pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 980 mOhm @ 3.1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock6,752 |
|
MOSFET (Metal Oxide) | 525V | 6A (Tc) | 10V | 4.5V @ 50µA | 34nC @ 10V | 737pF @ 100V | ±30V | - | 90W (Tc) | 980 mOhm @ 3.1A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Rohm Semiconductor |
MOSFET N-CH 30V 16A 8HSMT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 16A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock2,320 |
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MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 51nC @ 10V | 2550pF @ 15V | ±20V | - | 2W (Ta) | 4.5 mOhm @ 16A, 10V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET P-CH 150V 13A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock390,708 |
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MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | ±20V | - | 110W (Tc) | 295 mOhm @ 6.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia USA Inc. |
MOSFET N-CH 100V 190MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 830mW (Tc)
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 150mA, 5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,320 |
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MOSFET (Metal Oxide) | 100V | 190mA (Ta) | 5V | 2V @ 1mA | - | 40pF @ 10V | ±20V | - | 830mW (Tc) | 10 Ohm @ 150mA, 5V | 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Microchip Technology |
MOSFET N-CH 200V 100A TO264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 [L]
- Package / Case: TO-264-3, TO-264AA
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Package: - |
Stock75 |
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MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 5V @ 2.5mA | 140 nC @ 10 V | 7220 pF @ 25 V | - | - | - | 16mOhm @ 50A, 10V | - | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V TO251 TUB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 114W (Tc)
- Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Stub Leads, IPAK
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 84A (Tc) | 6V, 10V | 4V @ 250µA | 30 nC @ 10 V | 2085 pF @ 50 V | ±20V | - | 114W (Tc) | 9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPAK |
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onsemi |
MOSFET N-CH 60V 75A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 15mOhm @ 37.5A, 5V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 75A (Tc) | - | 2V @ 250µA | 115 nC @ 5 V | 4000 pF @ 25 V | - | - | - | 15mOhm @ 37.5A, 5V | - | Through Hole | TO-220-3 | TO-220-3 |
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Rohm Semiconductor |
650V 15A, TO-220AB, HIGH-SPEED S
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 430µA
- Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 161W (Tc)
- Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock2,868 |
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MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 5V @ 430µA | 27.5 nC @ 10 V | 1050 pF @ 25 V | ±20V | - | 161W (Tc) | 315mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
TRENCH >=100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 169µA
- Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 2.65mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock4,932 |
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MOSFET (Metal Oxide) | 100 V | 162A (Tc) | 6V, 10V | 3.8V @ 169µA | 154 nC @ 10 V | 7300 pF @ 50 V | ±20V | - | 250W (Tc) | 2.65mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
EF SERIES POWER MOSFET WITH FAST
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 179W (Tc)
- Rds On (Max) @ Id, Vgs: 149mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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Package: - |
Stock2,955 |
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MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 5V @ 250µA | 38 nC @ 10 V | 1465 pF @ 100 V | ±20V | - | 179W (Tc) | 149mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |