Page 670 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

FQAF33N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 25.8A TO-3PF

Package: SC-94

Stock17,076
FQP4N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 4.4A TO-220

Package: TO-220-3

Stock103,464
FDW252P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 8.8A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock299,268
APT20M45BVFRG
Microsemi Corporation

MOSFET N-CH 200V 56A TO-247

Package: TO-247-3

Stock5,952
IXTH90N15T
IXYS

MOSFET N-CH 150V 90A TO247

Package: TO-247-3

Stock390,000
IXTA300N04T2
IXYS

MOSFET N-CH 40V 300A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,888
NVMFS5C404NWFAFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock3,504
AOB1100L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 8A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,344
NTMFS5C442NLT1G
ON Semiconductor

MOSFET N-CH 40V 25A SO8FL

Package: 8-PowerTDFN

Stock7,744
FDN302P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 2.4A SSOT3

Package: TO-236-3, SC-59, SOT-23-3

Stock954,012
IXFA60N25X3
IXYS

MOSFET N-CH 250V 60A TO263AA

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,632
IXTY8N70X2
IXYS

MOSFET N-CHANNEL 700V 8A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,312
STB8NM60D
STMicroelectronics

MOSFET N-CH 600V 8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,824
RFD3055LE
Fairchild/ON Semiconductor

MOSFET N-CH 60V 11A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock422,976
IPT65R060CFD7XTMA1
Infineon Technologies

HIGH POWER_NEW

Package: -

Request a Quote
IXFN22N120
IXYS

MOSFET N-CH 22A SOT-227B

Package: -

Request a Quote
DMN2710UTQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT523 T&R

Package: -

Stock4,596
NP80N04NLG-S18-AY
NEC Corporation

MOSFET N-CH 40V 80A TO262

Package: -

Request a Quote
IXTT72N10
IXYS

MOSFET N-CH 100V 72A TO268

Package: -

Request a Quote
IQD063N15NM5ATMA1
Infineon Technologies

TRENCH >=100V

Package: -

Stock15,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FQAF33N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 25.8A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 12.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock17,076	MOSFET (Metal Oxide)	100V	25.8A (Tc)	10V	4V @ 250µA	51nC @ 10V	1500pF @ 25V	±25V	-	83W (Tc)	52 mOhm @ 12.9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PF	SC-94
FQP4N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 4.4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	600V	4.4A (Tc)	10V	5V @ 250µA	20nC @ 10V	670pF @ 25V	±30V	-	106W (Tc)	2.2 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDW252P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 8.8A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5045pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 8.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock299,268	MOSFET (Metal Oxide)	20V	8.8A (Ta)	2.5V, 4.5V	1.5V @ 250µA	66nC @ 4.5V	5045pF @ 10V	±12V	-	1.3W (Ta)	12.5 mOhm @ 8.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
APT20M45BVFRG	Microsemi Corporation	MOSFET N-CH 200V 56A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock5,952	MOSFET (Metal Oxide)	200V	56A (Tc)	10V	4V @ 1mA	195nC @ 10V	4860pF @ 25V	±30V	-	300W (Tc)	45 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
IXTH90N15T	IXYS	MOSFET N-CH 150V 90A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	150V	90A (Tc)	10V	4.5V @ 1mA	80nC @ 10V	4100pF @ 25V	±30V	-	455W (Tc)	20 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTA300N04T2	IXYS	MOSFET N-CH 40V 300A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,888	MOSFET (Metal Oxide)	40V	300A (Tc)	10V	4V @ 250µA	145nC @ 10V	10700pF @ 25V	±20V	-	480W (Tc)	2.5 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5C404NWFAFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,504	MOSFET (Metal Oxide)	40V	53A (Ta), 378A (Tc)	10V	4V @ 250µA	128nC @ 10V	8400pF @ 25V	±20V	-	3.9W (Ta), 200W (Tc)	0.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
AOB1100L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 8A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4833pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 500W (Tc) Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,344	MOSFET (Metal Oxide)	100V	8A (Ta), 130A (Tc)	10V	3.8V @ 250µA	100nC @ 10V	4833pF @ 25V	±20V	-	2.1W (Ta), 500W (Tc)	11.7 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTMFS5C442NLT1G	ON Semiconductor	MOSFET N-CH 40V 25A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,744	MOSFET (Metal Oxide)	40V	27A (Ta), 130A (Tc)	4.5V, 10V	2V @ 250µA	50nC @ 10V	3100pF @ 25V	±20V	-	3.1W (Ta), 69W (Tc)	2.8 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
FDN302P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 2.4A SSOT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 882pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock954,012	MOSFET (Metal Oxide)	20V	2.4A (Ta)	2.5V, 4.5V	1.5V @ 250µA	14nC @ 4.5V	882pF @ 10V	±12V	-	500mW (Ta)	55 mOhm @ 2.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
IXFA60N25X3	IXYS	MOSFET N-CH 250V 60A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,632	MOSFET (Metal Oxide)	250V	60A (Tc)	10V	4.5V @ 1.5mA	50nC @ 10V	3610pF @ 25V	±20V	-	320W (Tc)	23 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTY8N70X2	IXYS	MOSFET N-CHANNEL 700V 8A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,312	MOSFET (Metal Oxide)	700V	8A (Tc)	10V	5V @ 250µA	12nC @ 10V	800pF @ 10V	±30V	-	150W (Tc)	500 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
STB8NM60D	STMicroelectronics	MOSFET N-CH 600V 8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,824	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	5V @ 250µA	18nC @ 10V	380pF @ 25V	±30V	-	100W (Tc)	1 Ohm @ 2.5A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RFD3055LE	Fairchild/ON Semiconductor	MOSFET N-CH 60V 11A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 107 mOhm @ 8A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock422,976	MOSFET (Metal Oxide)	60V	11A (Tc)	5V	3V @ 250µA	11.3nC @ 10V	350pF @ 25V	±16V	-	38W (Tc)	107 mOhm @ 8A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IPT65R060CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Package / Case: 8-PowerSFN	Package: -	Request a Quote	-	650 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-3	8-PowerSFN
IXFN22N120	IXYS	MOSFET N-CH 22A SOT-227B FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN2710UTQ-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT523 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 870mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Stock4,596	MOSFET (Metal Oxide)	20 V	870mA (Ta)	1.8V, 4.5V	1V @ 250µA	0.6 nC @ 4.5 V	42 pF @ 16 V	±6V	-	320mW (Ta)	450mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
NP80N04NLG-S18-AY	NEC Corporation	MOSFET N-CH 40V 80A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	80A (Tc)	-	2.5V @ 250µA	135 nC @ 10 V	6900 pF @ 25 V	-	-	1.8W (Ta), 115W (Tc)	4.8mOhm @ 40A, 10V	175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2PAK, TO-262AA
IXTT72N10	IXYS	MOSFET N-CH 100V 72A TO268 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IQD063N15NM5ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 159µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-U04 Package / Case: 8-PowerTDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	150 V	14.1A (Ta), 148A (Tc)	8V, 10V	4.6V @ 159µA	60 nC @ 10 V	4700 pF @ 75 V	±20V	-	2.5W (Ta), 278W (Tc)	6.32mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSON-8-U04	8-PowerTDFN
SQJ464EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 32A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock35,085	MOSFET (Metal Oxide)	60 V	32A (Tc)	4.5V, 10V	2.5V @ 250µA	44 nC @ 10 V	2086 pF @ 30 V	±20V	-	45W (Tc)	17mOhm @ 7.1A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
NTPF125N65S3H	onsemi	POWER MOSFET, N-CHANNEL, SUPERFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.1mA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	24A (Tj)	10V	4V @ 2.1mA	44 nC @ 10 V	2200 pF @ 400 V	±30V	-	37W (Tc)	125mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
TK055U60Z1-RQ	Toshiba Semiconductor and Storage	600V DTMOS VI TOLL 55MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.69mA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 15A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: TOLL Package / Case: 8-PowerSFN	Package: -	Stock10,701	MOSFET (Metal Oxide)	600 V	40A (Ta)	10V	4V @ 1.69mA	65 nC @ 10 V	3680 pF @ 300 V	±30V	-	270W (Tc)	55mOhm @ 15A, 10V	150°C	Surface Mount	TOLL	8-PowerSFN
TSM60NB099PW	Taiwan Semiconductor Corporation	600V, 38A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 329W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	38A (Tc)	10V	4V @ 250µA	62 nC @ 10 V	2587 pF @ 100 V	±30V	-	329W (Tc)	99mOhm @ 11.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
SI3459BDV-T1-BE3	Vishay Siliconix	P-CHANNEL 60-V (D-S) MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 2.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock2,499	MOSFET (Metal Oxide)	60 V	2.2A (Ta), 2.9A (Tc)	4.5V, 10V	3V @ 250µA	12 nC @ 10 V	350 pF @ 30 V	±20V	-	2W (Ta), 3.3W (Tc)	216mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
DMP1009UFDFQ-13	Diodes Incorporated	MOSFET P-CH 12V 11A 6UDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	11A (Ta)	1.8V, 4.5V	1V @ 250µA	44 nC @ 8 V	1860 pF @ 10 V	±8V	-	2W (Ta)	11mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
XP50AN1K5I	YAGEO XSEMI	MOSFET N-CH 500V 5A TO220CFM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.92W (Ta), 31.3W (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220CFM Package / Case: TO-220-3 Full Pack	Package: -	Stock3,000	MOSFET (Metal Oxide)	500 V	5A (Tc)	10V	4V @ 250µA	24.6 nC @ 10 V	800 pF @ 100 V	±30V	-	1.92W (Ta), 31.3W (Tc)	1.55Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220CFM	TO-220-3 Full Pack
DMN2015UFDF-13	Diodes Incorporated	MOSFET N-CH 20V 15.2A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1439 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 8.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	15.2A (Ta)	1.5V, 4.5V	1.2V @ 250µA	42.3 nC @ 10 V	1439 pF @ 10 V	±12V	-	1.8W (Ta)	9mOhm @ 8.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6	6-UDFN Exposed Pad