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Infineon Technologies |
MOSFET P-CH 30V 3.8A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 511pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 98 mOhm @ 3.8A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Micro6?(TSOP-6)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock2,992 |
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MOSFET (Metal Oxide) | 30V | 3.8A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 17nC @ 10V | 511pF @ 25V | ±20V | - | 2W (Ta) | 98 mOhm @ 3.8A, 10V | - | Surface Mount | Micro6?(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET P-CH 30V 75A ATPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 10V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 38A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ATPAK
- Package / Case: -
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Package: - |
Stock3,744 |
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MOSFET (Metal Oxide) | 30V | 75A (Ta) | - | - | 76nC @ 10V | 3950pF @ 10V | - | - | 60W (Tc) | 8.4 mOhm @ 38A, 10V | 150°C (TJ) | Surface Mount | ATPAK | - |
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NXP |
MOSFET N-CH 30V 9A SOT96-1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,664 |
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MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 800mV @ 250µA | 11.8nC @ 5V | - | ±20V | - | 2.5W (Ta) | 18.5 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 60V 2A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 175 mOhm @ 1A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223 (TO-261)
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock4,768 |
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MOSFET (Metal Oxide) | 60V | 2A (Ta) | 5V | 2V @ 250µA | 10nC @ 5V | 270pF @ 25V | ±15V | - | 1.3W (Ta) | 175 mOhm @ 1A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 (TO-261) | TO-261-4, TO-261AA |
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STMicroelectronics |
MOSFET N-CH 650V 8A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock242,484 |
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MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 5V @ 250µA | 18nC @ 10V | 400pF @ 25V | ±30V | - | 30W (Tc) | 1 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 250V 22A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 135W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,248 |
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MOSFET (Metal Oxide) | 250V | 22A (Tc) | 10V | 4V @ 250µA | 151nC @ 10V | 2400pF @ 25V | ±20V | - | 135W (Tc) | 150 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 29A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,976 |
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MOSFET (Metal Oxide) | 55V | 29A (Tc) | 10V | 4V @ 26µA | 18nC @ 10V | 513pF @ 25V | ±20V | - | 68W (Tc) | 40 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 250V 30A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock390,000 |
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MOSFET (Metal Oxide) | 250V | 30A (Tc) | 10V | 4V @ 250µA | 136nC @ 10V | 3950pF @ 25V | ±20V | - | 200W (Tc) | 75 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 150V 85A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6285pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,032 |
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MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 3.5V @ 250µA | 120nC @ 10V | 6285pF @ 25V | ±20V | - | 375W (Tc) | 19 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock7,568 |
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MOSFET (Metal Oxide) | 60V | 15A (Ta), 80A (Tc) | 4.5V, 10V | 2V @ 250µA | 41.3nC @ 10V | 2090pF @ 30V | ±20V | - | 2.2W (Ta), 62.5W (Tc) | 6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET P-CH 50V 5.3A I-PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251AA
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock243,564 |
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MOSFET (Metal Oxide) | 50V | 5.3A (Tc) | 10V | 4V @ 250µA | 9.1nC @ 10V | 240pF @ 25V | ±20V | - | 25W (Tc) | 500 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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IXYS |
MOSFET N-CH 500V 53A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 53A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 610nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 735W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock12,894 |
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MOSFET (Metal Oxide) | 500V | 53A | 10V | 4.5V @ 250µA | 610nC @ 10V | 24000pF @ 25V | ±30V | - | 735W (Tc) | 100 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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onsemi |
MOSFET N-CH 500V 45A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6630 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Rds On (Max) @ Id, Vgs: 120mOhm @ 22.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 500 V | 45A (Tc) | 10V | 5V @ 250µA | 137 nC @ 10 V | 6630 pF @ 25 V | ±30V | - | 625W (Tc) | 120mOhm @ 22.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Panjit International Inc. |
100V N-CHANNEL ENHANCEMENT MODE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060-8
- Package / Case: 8-PowerVDFN
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Package: - |
Stock1,917 |
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MOSFET (Metal Oxide) | 100 V | 6.5A (Ta), 42A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 31 nC @ 10 V | 1519 pF @ 30 V | ±20V | - | 2W (Ta), 83W (Tc) | 25Ohm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 8V~24V X1-DFN1006-
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds: 76.5 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 430mW (Ta)
- Rds On (Max) @ Id, Vgs: 495mOhm @ 400mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1006-3
- Package / Case: 3-UFDFN
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Package: - |
Stock63,192 |
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MOSFET (Metal Oxide) | 20 V | 770mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 1.5 nC @ 8 V | 76.5 pF @ 10 V | ±8V | - | 430mW (Ta) | 495mOhm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1006-3 | 3-UFDFN |
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Rohm Semiconductor |
MOSFET P-CH 30V 3.1A DFN1616-6W
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: DFN1616-6W
- Package / Case: 6-PowerWFDFN
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Package: - |
Stock17,556 |
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MOSFET (Metal Oxide) | 30 V | 3.1A (Ta) | - | 2.5V @ 1mA | 4.8 nC @ 5 V | 460 pF @ 10 V | ±20V | - | 1.5W (Ta) | 105mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | DFN1616-6W | 6-PowerWFDFN |
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Motorola |
PFET TSOP6S 20V 0.098R TR
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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YAGEO XSEMI |
MOSFET N-CH 100V 300A TOLL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 16960 pF @ 80 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 333W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL
- Package / Case: 8-PowerSFN
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Package: - |
Stock3,000 |
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MOSFET (Metal Oxide) | 100 V | 300A (Tc) | 10V | 4V @ 250µA | 304 nC @ 10 V | 16960 pF @ 80 V | ±20V | - | 3.75W (Ta), 333W (Tc) | 1.5mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TOLL | 8-PowerSFN |
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Vishay Siliconix |
MOSFET P-CH 12V 6.8A 8-TSSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 850mV @ 450µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
|
Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 12 V | 6.8A (Ta) | - | 850mV @ 450µA | 70 nC @ 4.5 V | - | - | - | - | 12.5mOhm @ 8A, 4.5V | - | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Goford Semiconductor |
N30V,8A,RD<20M@10V,VTH1.0V~2.0V,
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 681 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 17W (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-DFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 8A (Tc) | 4.5V, 10V | 2V @ 250µA | 15 nC @ 10 V | 681 pF @ 15 V | ±20V | - | 17W (Tc) | 20mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN (2x2) | 6-WDFN Exposed Pad |
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onsemi |
MOSFET N-CH SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 280mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300mW (Tc)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 280mA (Tc) | 5V, 10V | 2.5V @ 250µA | - | 50 pF @ 25 V | ±20V | - | 300mW (Tc) | 2Ohm @ 500mA, 10V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
N-CHANNEL 60-V (D-S) MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
- Rds On (Max) @ Id, Vgs: 156mOhm @ 1.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock6,495 |
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MOSFET (Metal Oxide) | 60 V | 1.9A (Ta), 2.3A (Tc) | 4.5V, 10V | 3V @ 250µA | 6.8 nC @ 10 V | 190 pF @ 30 V | ±20V | - | 1.09W (Ta), 1.66W (Tc) | 156mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 500V 5A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Stock2,013 |
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MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 10V | 4.5V @ 250µA | 15 nC @ 10 V | 586 pF @ 50 V | ±30V | - | 89W (Tc) | 1.38Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
OPTIMOS 6 POWER-TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1.46mA
- Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
- Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TTFN-9-U02
- Package / Case: 9-PowerTDFN
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Package: - |
Stock14,793 |
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MOSFET (Metal Oxide) | 30 V | 66A (Ta), 700A (Tc) | 4.5V, 10V | 2V @ 1.46mA | 197 nC @ 10 V | 18000 pF @ 15 V | ±20V | - | 2.5W (Ta), 278W (Tc) | 0.35mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TTFN-9-U02 | 9-PowerTDFN |
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Panjit International Inc. |
60V N-CHANNEL ENHANCEMENT MODE M
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 93W (Tc)
- Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 13.5 nC @ 4.5 V | 1574 pF @ 25 V | ±20V | - | 93W (Tc) | 17mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Panjit International Inc. |
SOT-523, MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523 Flat Leads
- Package / Case: SC-89, SOT-490
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Package: - |
Stock224,685 |
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MOSFET (Metal Oxide) | 60 V | 115mA (Ta) | 4.5V, 10V | 2.5V @ 250µA | 0.8 nC @ 4.5 V | 35 pF @ 25 V | ±20V | - | 200mW (Ta) | 3Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 Flat Leads | SC-89, SOT-490 |
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Vishay Siliconix |
MOSFET N-CH 500V 2.4A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,500 |
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MOSFET (Metal Oxide) | 500 V | 2.4A (Tc) | 10V | 4V @ 250µA | 19 nC @ 10 V | 360 pF @ 25 V | ±20V | - | 2.5W (Ta), 42W (Tc) | 3Ohm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 150V 76A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350W (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 38A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | 76A (Tc) | 10V | 4.5V @ 250µA | 97 nC @ 10 V | 5800 pF @ 25 V | ±20V | - | 350W (Tc) | 22mOhm @ 38A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |