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Infineon Technologies |
MOSFET N-CH 100V 27A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 29µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 27A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock12,252 |
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MOSFET (Metal Oxide) | 100V | 27A (Tc) | 10V | 4V @ 29µA | 24nC @ 10V | 1570pF @ 50V | ±20V | - | 58W (Tc) | 35 mOhm @ 27A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 27A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 29µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 27A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,976 |
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MOSFET (Metal Oxide) | 100V | 27A (Tc) | 10V | 4V @ 29µA | 24nC @ 10V | 1570pF @ 50V | ±20V | - | 58W (Tc) | 34 mOhm @ 27A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,432 |
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MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 4.5V, 10V | 1.4V @ 250µA | 1.4nC @ 10V | 41pF @ 25V | ±20V | - | 360mW (Ta) | 3.5 Ohm @ 230mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 31A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 69nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 31A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MT
- Package / Case: DirectFET? Isometric MT
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Package: DirectFET? Isometric MT |
Stock25,560 |
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MOSFET (Metal Oxide) | 20V | 31A (Ta), 150A (Tc) | 4.5V, 10V | 2.45V @ 250µA | 69nC @ 4.5V | 6290pF @ 10V | ±20V | - | 1.8W (Ta), 89W (Tc) | 2 mOhm @ 31A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MT | DirectFET? Isometric MT |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 20V SOT23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock167,304 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N-CH 200V 0.18A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 250mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
|
Package: E-Line-3 |
Stock6,208 |
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MOSFET (Metal Oxide) | 200V | 180mA (Ta) | 10V | 3V @ 1mA | - | 85pF @ 25V | ±20V | - | 700mW (Ta) | 10 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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ON Semiconductor |
MOSFET N-CH 30V 8.6A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 24V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 860mW (Ta)
- Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock395,688 |
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MOSFET (Metal Oxide) | 30V | 8.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 24nC @ 4.5V | 1600pF @ 24V | ±20V | - | 860mW (Ta) | 7.2 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 600V 10A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock33,408 |
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MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 4V @ 250µA | 31nC @ 10V | 850pF @ 50V | ±25V | - | 25W (Tc) | 450 mOhm @ 5A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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|
IXYS |
MOSFET N-CH 1200V 30A PLUS264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 22500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264?
- Package / Case: TO-264-3, TO-264AA
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Package: TO-264-3, TO-264AA |
Stock4,992 |
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MOSFET (Metal Oxide) | 1200V | 30A (Tc) | 10V | 6.5V @ 1mA | 310nC @ 10V | 22500pF @ 25V | ±20V | - | 1250W (Tc) | 350 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS264? | TO-264-3, TO-264AA |
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ON Semiconductor |
MOSFET P-CH 30V 7.5A ECH8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-ECH
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock178,200 |
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MOSFET (Metal Oxide) | 30V | 7.5A (Ta) | 4V, 10V | - | 18nC @ 10V | 875pF @ 10V | ±20V | - | 1.5W (Ta) | 25 mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | 8-ECH | 8-SMD, Flat Lead |
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STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 315W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: -
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab) Variant
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Package: TO-263-7, D2Pak (6 Leads + Tab) Variant |
Stock10,236 |
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MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 3.8V @ 250µA | 180nC @ 10V | 12800pF @ 25V | ±20V | - | 315W (Tc) | 2.5 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | - | TO-263-7, D2Pak (6 Leads + Tab) Variant |
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Rohm Semiconductor |
MOSFET P-CH 30V 9A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock525,732 |
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MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4V, 10V | 2.5V @ 1mA | 39nC @ 5V | 4000pF @ 10V | 20V | - | 2W (Ta) | 14 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 4.8A PS-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 840mW (Ta)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PS-8 (2.9x2.4)
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock2,064 |
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MOSFET (Metal Oxide) | 40V | 4.8A (Ta) | 4.5V, 10V | 2V @ 1mA | 19nC @ 10V | 800pF @ 10V | ±20V | - | 840mW (Ta) | 40 mOhm @ 2.4A, 10V | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
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Panasonic Electronic Components |
MOSFET P-CH 12V 4A WSMINI6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 1A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: WSMini6-F1-B
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock4,400 |
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MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.8V, 4.5V | 1V @ 1mA | - | 1400pF @ 10V | ±8V | - | 700mW (Ta) | 34 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | WSMini6-F1-B | 6-SMD, Flat Leads |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock17,664 |
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MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 4V @ 250µA | 240nC @ 10V | 9200pF @ 25V | ±20V | - | 380W (Tc) | 1.75 mOhm @ 195A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Microchip Technology |
MOSFET P-CH 90V 0.25A TO92-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 90V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock14,628 |
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MOSFET (Metal Oxide) | 90V | 250mA (Tj) | 5V, 10V | 3.5V @ 1mA | - | 60pF @ 25V | ±20V | - | 1W (Tc) | 8 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET P-CH 40V 8.5A POWERDI
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock99,780 |
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MOSFET (Metal Oxide) | 40V | 8.5A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 47.5nC @ 5V | 4234pF @ 20V | ±25V | - | 1.3W (Ta) | 11 mOhm @ 9.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 51W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 18A (Ta), 71A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 13.9 nC @ 10 V | 978 pF @ 20 V | ±20V | - | 3.5W (Ta), 51W (Tc) | 5.5mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
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Diotec Semiconductor |
MOSFET SO8 N 100V 0.02OHM 150C
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 7.6A (Ta) | 6V, 10V | 4V @ 250µA | 22 nC @ 10 V | 1650 pF @ 25 V | ±20V | - | 2.5W (Ta) | 20mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 3.5A TSMT6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Stock8,835 |
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MOSFET (Metal Oxide) | 30 V | 3.5A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 6.4 nC @ 4.5 V | 285 pF @ 10 V | ±12V | - | 950mW (Ta) | 54mOhm @ 3.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CHANNEL 30V 18A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.8W (Tc)
- Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock792 |
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MOSFET (Metal Oxide) | 30 V | 18A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 50 nC @ 4.5 V | 3630 pF @ 25 V | ±20V | - | 6.8W (Tc) | 12mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 200V 2.6A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock17,988 |
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MOSFET (Metal Oxide) | 200 V | 2.6A (Tc) | - | 4V @ 250µA | 8.2 nC @ 10 V | 140 pF @ 25 V | ±20V | - | 2.5W (Ta), 25W (Tc) | 1.5Ohm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Renesas Electronics Corporation |
MOSFET N-CH 5.5V 12A 6WLCSP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 5.5 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3.5V, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 5.5 V
- Vgs (Max): ±5.5V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 12A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WLCSP (1.47x1.47)
- Package / Case: 6-SMD, No Lead
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 5.5 V | 12A (Ta) | 3.5V, 4.5V | 800mV @ 250µA | 6 nC @ 3.5 V | 940 pF @ 5.5 V | ±5.5V | - | 2.5W (Ta) | 2.4mOhm @ 12A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WLCSP (1.47x1.47) | 6-SMD, No Lead |
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Harris Corporation |
MOSFET N-CH 30V 70A TO262AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262AA
- Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 70A (Tc) | - | 4V @ 250µA | 260 nC @ 20 V | 3300 pF @ 25 V | ±20V | - | 150W (Tc) | 10mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262AA | TO-262-3 Long Leads, I2PAK, TO-262AA |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 54A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 15 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 54A (Ta) | 4.5V, 10V | 3V @ 250µA | 25 nC @ 5 V | 2164 pF @ 15 V | ±16V | - | 1.6W (Ta) | 12mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
BTS132 - N-CHANNEL TEMPFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W
- Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 24A (Tc) | 4.5V | 2.5V @ 1mA | - | 1400 pF @ 25 V | ±20V | - | 75W | 65mOhm @ 12A, 4.5V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Good-Ark Semiconductor |
MOSFET, N-CH, SINGLE, 160A, 100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: - |
Stock2,796 |
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MOSFET (Metal Oxide) | 100 V | 160A (Tc) | 10V | 3.5V @ 250µA | 450 nC @ 10 V | 26000 pF @ 25 V | ±20V | - | 208W (Tc) | 3.5mOhm @ 20A, 10V | -50°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Diotec Semiconductor |
IC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 55.5W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-QFN (5x6)
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 48 nC @ 10 V | 2980 pF @ 25 V | ±20V | - | 55.5W (Tc) | 2.5mOhm @ 23A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-QFN (5x6) | 8-PowerTDFN |