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Infineon Technologies |
MOSFET N-CH 150V 78A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 33A, 10V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock69,036 |
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MOSFET (Metal Oxide) | 150V | 78A (Tc) | 10V | 5V @ 250µA | 107nC @ 10V | 4530pF @ 25V | ±30V | - | 310W (Tc) | 15.5 mOhm @ 33A, 10V | -40°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 55V 35A TO220-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Temperature Sensing Diode
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 19A, 10V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: P-TO220-5
- Package / Case: TO-220-5
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Package: TO-220-5 |
Stock7,056 |
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MOSFET (Metal Oxide) | 55V | 35A (Tc) | 4.5V, 10V | 2V @ 130µA | 130nC @ 10V | 2660pF @ 25V | ±20V | Temperature Sensing Diode | 170W (Tc) | 13 mOhm @ 19A, 10V | -40°C ~ 175°C (TJ) | Through Hole | P-TO220-5 | TO-220-5 |
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Infineon Technologies |
MOSFET N-CH 100V 10A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-220AB
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,848 |
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MOSFET (Metal Oxide) | 100V | 10A (Tc) | - | 3.5V @ 1mA | - | 600pF @ 25V | - | - | - | 200 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-220AB | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 54A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock163,536 |
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MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 3V @ 250µA | 17nC @ 4.5V | 1060pF @ 10V | ±20V | - | 3.8W (Ta), 71W (Tc) | 14 mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 64A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock6,608 |
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MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 1V @ 250µA | 43nC @ 4.5V | 1900pF @ 25V | ±16V | - | 2W (Ta), 89W (Tc) | 14 mOhm @ 34A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V SOT23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock3,520 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 11.2A TO-3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: SC-94
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Package: SC-94 |
Stock4,736 |
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MOSFET (Metal Oxide) | 600V | 11.2A (Tc) | 10V | 5V @ 250µA | 90nC @ 10V | 3600pF @ 25V | ±30V | - | 120W (Tc) | 380 mOhm @ 5.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | SC-94 |
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STMicroelectronics |
MOSFET N-CH 650V 11.0A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 50V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock7,392 |
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MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 4.5V @ 100µA | 42nC @ 10V | 1180pF @ 50V | ±30V | - | 35W (Tc) | 850 mOhm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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TT Electronics/Optek Technology |
MOSFET N-CH 60V 200MA SMD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Vgs (Max): ±40V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-SMD
- Package / Case: 3-SMD, No Lead
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Package: 3-SMD, No Lead |
Stock3,056 |
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MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 10V | 3V @ 1mA | - | 60pF @ 25V | ±40V | - | 300mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD | 3-SMD, No Lead |
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IXYS |
MOSFET N-CH 1000V 12A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock6,272 |
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MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 4.5V @ 250µA | 170nC @ 10V | 4000pF @ 25V | ±20V | - | 300W (Tc) | 1.05 Ohm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 40V 126A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock5,952 |
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MOSFET (Metal Oxide) | 40V | 28A (Ta), 130A (Tc) | 4.5V, 10V | 2V @ 250µA | 50nC @ 10V | 3100pF @ 25V | ±20V | - | 3.7W (Ta), 83W (Tc) | 2.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 40A 1212-8 PWR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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Package: PowerPAK? 1212-8 |
Stock7,504 |
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MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 77nC @ 10V | 3595pF @ 15V | +20V, -16V | - | 3.7W (Ta), 52W (Tc) | 2.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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Infineon Technologies |
MOSFET N-CH 800V 11A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 680µA
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock111,204 |
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MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 3.9V @ 680µA | 85nC @ 10V | 1600pF @ 100V | ±20V | - | 156W (Tc) | 450 mOhm @ 7.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Central Semiconductor Corp |
MOSFET P-CH 20V 650MA SOT523
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V
- Vgs (Max): 8V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
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Package: SOT-523 |
Stock7,552 |
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MOSFET (Metal Oxide) | 20V | 650mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 1.2nC @ 4.5V | 100pF @ 16V | 8V | - | 300mW (Ta) | 360 mOhm @ 350mA, 4.5V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 6.3A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 6.3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-4
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock42,648 |
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MOSFET (Metal Oxide) | 30V | 6.3A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 15nC @ 4.5V | 500pF @ 15V | ±8V | - | 3W (Ta) | 45 mOhm @ 6.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 60V 0.38A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 380mW (Ta)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 100mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,824 |
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MOSFET (Metal Oxide) | 60V | 380mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.5nC @ 4.5V | 32pF @ 30V | ±20V | - | 380mW (Ta) | 2 Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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STMicroelectronics |
MOSFET N-CH 650V 22A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 148 mOhm @ 11A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock6,384 |
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MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 5V @ 250µA | 45nC @ 10V | 816pF @ 100V | ±25V | - | 30W (Tc) | 148 mOhm @ 11A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 58µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock12,378 |
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MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 2.2V @ 58µA | 50nC @ 4.5V | 8400pF @ 30V | ±20V | - | 115W (Tc) | 5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Infineon Technologies |
SILICON CARBIDE MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Bruckewell |
N-Channel MOSFET,30V,46A,DFN3x3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333
- Package / Case: 8-VDFN Exposed Pad
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 46A (Ta) | 4.5V, 10V | 2.5V @ 250µA | - | - | ±20V | - | - | 9mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN3333 | 8-VDFN Exposed Pad |
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Vishay Siliconix |
MOSFET N-CH 100V 28A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
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MOSFET (Metal Oxide) | 100 V | 28A (Tc) | 10V | 4V @ 250µA | 72 nC @ 10 V | 1700 pF @ 25 V | ±20V | - | 3.7W (Ta), 150W (Tc) | 77mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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onsemi |
MOSFET N-CH 40V 21A/78A LFPAK4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 21A (Ta), 78A (Tc) | 4.5V, 10V | 2V @ 40µA | 23 nC @ 10 V | 1300 pF @ 25 V | ±20V | - | 3.6W (Ta), 50W (Tc) | 4.5mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
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GeneSiC Semiconductor |
SIC MOSFET N-CH 11A TO247-3
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 2.69V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Stock16,794 |
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SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 15V | 2.69V @ 2mA | 12 nC @ 15 V | 334 pF @ 800 V | ±15V | - | 74W (Tc) | 420mOhm @ 4A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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onsemi |
MOSFET N-CH 60V 14A/50A 5DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
- Rds On (Max) @ Id, Vgs: 10.7mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 14A (Ta), 50A (Tc) | 10V | 4V @ 35µA | 9.6 nC @ 10 V | 680 pF @ 30 V | ±20V | - | 3.6W (Ta), 46W (Tc) | 10.7mOhm @ 7A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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onsemi |
MOSFET N-CH 80V 17A/89A 5DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
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MOSFET (Metal Oxide) | 80 V | 17A (Ta), 89A (Tc) | 6V, 10V | 4V @ 120µA | 32 nC @ 10 V | 2085 pF @ 40 V | ±20V | - | 3.8W (Ta), 104W (Tc) | 5.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Microchip Technology |
MOSFET, P-CHANNEL ENHANCEMENT-MO
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350 V
- Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-DFN (2x2)
- Package / Case: 6-VDFN Exposed Pad
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Package: - |
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MOSFET (Metal Oxide) | 350 V | 85mA (Tj) | 4.5V, 10V | 2.4V @ 1mA | - | 110 pF @ 25 V | ±20V | - | 360mW (Ta) | 30Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN (2x2) | 6-VDFN Exposed Pad |
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Micro Commercial Co |
MOSFET N-CH 100V 80A DFN5060
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 101.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6124 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 85W
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060
- Package / Case: 8-PowerTDFN
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Package: - |
Stock134,700 |
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MOSFET (Metal Oxide) | 100 V | 80A (Tj) | 4.5V, 10V | 3V @ 250µA | 101.6 nC @ 10 V | 6124 pF @ 50 V | ±20V | - | 85W | 4.3mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V,POWERDI10
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 124.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8450 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.8W (Ta), 230.8W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: POWERDI1012-8
- Package / Case: 8-PowerSFN
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Package: - |
Stock3,396 |
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MOSFET (Metal Oxide) | 100 V | 215A (Tc) | 10V | 4V @ 250µA | 124.4 nC @ 10 V | 8450 pF @ 50 V | ±20V | - | 5.8W (Ta), 230.8W (Tc) | 2.5mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | POWERDI1012-8 | 8-PowerSFN |