Page 737 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7521D1TRPBF
Infineon Technologies

MOSFET N-CH 20V 2.4A MICRO8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock247,128
IRLR3715TR
Infineon Technologies

MOSFET N-CH 20V 54A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,536
SUP18N15-95-E3
Vishay Siliconix

MOSFET N-CH 150V 18A TO220-3

Package: TO-220-3

Stock60,336
SI6459BDQ-T1-E3
Vishay Siliconix

MOSFET P-CH 60V 2.2A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock141,252
IXTV200N10TS
IXYS

MOSFET N-CH 100V 200A PLUS220SMD

Package: PLUS-220SMD

Stock3,776
STP16NF25
STMicroelectronics

MOSFET N-CH 250V 13A TO-220

Package: TO-220-3

Stock390,864
IRF3808STRRPBF
Infineon Technologies

MOSFET N-CH 75V 106A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock240,000
IXFH17N80Q
IXYS

MOSFET N-CH 800V 17A TO-247

Package: TO-247-3

Stock390,708
RP1E050RPTR
Rohm Semiconductor

MOSFET P-CH 30V 5A MPT6

Package: 6-SMD, Flat Leads

Stock2,384
TK80S06K3L(T6L1,NQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 80A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,856
STP6N65M2
STMicroelectronics

MOSFET N-CH 650V 4A TO-220AB

Package: TO-220-3

Stock6,368
IXFN55N50
IXYS

MOSFET N-CH 500V 55A SOT-227B

Package: SOT-227-4, miniBLOC

Stock7,664
BUK9M23-80EX
Nexperia USA Inc.

MOSFET N-CH 80V 37A LFPAK

Package: SOT-1210, 8-LFPAK33 (5-Lead)

Stock6,528
STB120N4LF6
STMicroelectronics

MOSFET N-CH 40V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock402,012
DMT6010LPS-13
Diodes Incorporated

MOSFET N-CH 60V 13.5A

Package: 8-PowerTDFN

Stock6,016
PMZ950UPEYL
Nexperia USA Inc.

MOSFET P-CH 20V 0.5A

Package: SC-101, SOT-883

Stock199,212
IRFB3307PBF
Infineon Technologies

MOSFET N-CH 75V 130A TO-220AB

Package: TO-220-3

Stock4,480
SI2329DS-T1-GE3
Vishay Siliconix

MOSFET P-CH 8V 6A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock785,724
GSF3407
Good-Ark Semiconductor

MOSFET, P-CH, SINGLE, -4.1A, -30

Package: -

Stock8,685
IAUT260N10S5N019ATMA1
Infineon Technologies

MOSFET N-CH 100V 260A 8HSOF

Package: -

Stock10,731

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7521D1TRPBF	Infineon Technologies	MOSFET N-CH 20V 2.4A MICRO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock247,128	MOSFET (Metal Oxide)	20V	2.4A (Ta)	2.7V, 4.5V	700mV @ 250µA	8nC @ 4.5V	260pF @ 15V	±12V	Schottky Diode (Isolated)	1.3W (Ta)	135 mOhm @ 1.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRLR3715TR	Infineon Technologies	MOSFET N-CH 20V 54A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,536	MOSFET (Metal Oxide)	20V	54A (Tc)	4.5V, 10V	3V @ 250µA	17nC @ 4.5V	1060pF @ 10V	±20V	-	3.8W (Ta), 71W (Tc)	14 mOhm @ 26A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SUP18N15-95-E3	Vishay Siliconix	MOSFET N-CH 150V 18A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock60,336	MOSFET (Metal Oxide)	150V	18A (Tc)	6V, 10V	2V @ 250µA (Min)	25nC @ 10V	900pF @ 25V	±20V	-	88W (Tc)	95 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
SI6459BDQ-T1-E3	Vishay Siliconix	MOSFET P-CH 60V 2.2A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock141,252	MOSFET (Metal Oxide)	60V	2.2A (Ta)	4.5V, 10V	3V @ 250µA	22nC @ 10V	-	±20V	-	1W (Ta)	115 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IXTV200N10TS	IXYS	MOSFET N-CH 100V 200A PLUS220SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock3,776	MOSFET (Metal Oxide)	100V	200A (Tc)	10V	4.5V @ 250µA	152nC @ 10V	9400pF @ 25V	±30V	-	550W (Tc)	5.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
STP16NF25	STMicroelectronics	MOSFET N-CH 250V 13A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 235 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,864	MOSFET (Metal Oxide)	250V	14A (Tc)	10V	4V @ 250µA	18nC @ 10V	680pF @ 25V	±20V	-	100W (Tc)	235 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF3808STRRPBF	Infineon Technologies	MOSFET N-CH 75V 106A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5310pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 82A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock240,000	MOSFET (Metal Oxide)	75V	106A (Tc)	10V	4V @ 250µA	220nC @ 10V	5310pF @ 25V	±20V	-	200W (Tc)	7 mOhm @ 82A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFH17N80Q	IXYS	MOSFET N-CH 800V 17A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,708	MOSFET (Metal Oxide)	800V	17A (Tc)	10V	4.5V @ 4mA	95nC @ 10V	3600pF @ 25V	±20V	-	400W (Tc)	600 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
RP1E050RPTR	Rohm Semiconductor	MOSFET P-CH 30V 5A MPT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock2,384	MOSFET (Metal Oxide)	30V	5A (Ta)	4V, 10V	2.5V @ 1mA	9.2nC @ 5V	850pF @ 10V	±20V	-	2W (Ta)	50 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	MPT6	6-SMD, Flat Leads
TK80S06K3L(T6L1,NQ	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 80A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,856	MOSFET (Metal Oxide)	60V	80A (Ta)	6V, 10V	3V @ 1mA	85nC @ 10V	4200pF @ 10V	±20V	-	100W (Tc)	5.5 mOhm @ 40A, 10V	175°C (TJ)	Surface Mount	DPAK+	TO-252-3, DPak (2 Leads + Tab), SC-63
STP6N65M2	STMicroelectronics	MOSFET N-CH 650V 4A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 226pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,368	MOSFET (Metal Oxide)	650V	4A (Tc)	10V	4V @ 250µA	9.8nC @ 10V	226pF @ 100V	±25V	-	60W (Tc)	1.35 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXFN55N50	IXYS	MOSFET N-CH 500V 55A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 55A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 27.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,664	MOSFET (Metal Oxide)	500V	55A	10V	4.5V @ 8mA	330nC @ 10V	9400pF @ 25V	±20V	-	625W (Tc)	90 mOhm @ 27.5A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
BUK9M23-80EX	Nexperia USA Inc.	MOSFET N-CH 80V 37A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2808pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: SOT-1210, 8-LFPAK33 (5-Lead)	Stock6,528	MOSFET (Metal Oxide)	80V	37A (Tc)	5V	2.1V @ 1mA	20nC @ 5V	2808pF @ 25V	±10V	-	79W (Tc)	20 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
STB120N4LF6	STMicroelectronics	MOSFET N-CH 40V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock402,012	MOSFET (Metal Oxide)	40V	80A (Tc)	5V, 10V	3V @ 250µA	80nC @ 10V	4300pF @ 25V	±20V	-	110W (Tc)	4 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMT6010LPS-13	Diodes Incorporated	MOSFET N-CH 60V 13.5A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 113W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,016	MOSFET (Metal Oxide)	60V	13.5A (Ta), 80A (Tc)	4.5V, 10V	3V @ 250µA	41.3nC @ 10V	2090pF @ 30V	±20V	-	2.2W (Ta), 113W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
PMZ950UPEYL	Nexperia USA Inc.	MOSFET P-CH 20V 0.5A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock199,212	MOSFET (Metal Oxide)	20V	500mA (Ta)	1.2V, 4.5V	950mV @ 250µA	2.1nC @ 4.5V	43pF @ 10V	±8V	-	360mW (Ta), 2.7W (Tc)	1.4 Ohm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006-3	SC-101, SOT-883
IRFB3307PBF	Infineon Technologies	MOSFET N-CH 75V 130A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,480	MOSFET (Metal Oxide)	75V	130A (Tc)	10V	4V @ 150µA	180nC @ 10V	5150pF @ 50V	±20V	-	200W (Tc)	6.3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SI2329DS-T1-GE3	Vishay Siliconix	MOSFET P-CH 8V 6A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1485pF @ 4V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock785,724	MOSFET (Metal Oxide)	8V	6A (Tc)	1.2V, 4.5V	800mV @ 250µA	29nC @ 4.5V	1485pF @ 4V	±5V	-	1.25W (Ta), 2.5W (Tc)	30 mOhm @ 5.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
GSF3407	Good-Ark Semiconductor	MOSFET, P-CH, SINGLE, -4.1A, -30 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock8,685	MOSFET (Metal Oxide)	30 V	4.1A (Ta)	4.5V, 10V	2.4V @ 250µA	6.8 nC @ 10 V	580 pF @ 15 V	±20V	-	1.2W (Ta)	55mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IAUT260N10S5N019ATMA1	Infineon Technologies	MOSFET N-CH 100V 260A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 210µA Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: -	Stock10,731	MOSFET (Metal Oxide)	100 V	260A (Tc)	6V, 10V	3.8V @ 210µA	166 nC @ 10 V	11830 pF @ 50 V	±20V	-	300W (Tc)	1.9mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
DMTH12H007SK3-13	Diodes Incorporated	MOSFET BVDSS: 101V~250V TO252 T& FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	120 V	86A (Tc)	10V	4V @ 250µA	44 nC @ 10 V	3142 pF @ 60 V	±20V	-	2W (Ta)	8.9mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
BTS114AE3045A	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO220-3-5 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	17A (Tc)	10V	3.5V @ 1mA	-	600 pF @ 25 V	±20V	-	50W	100mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO220-3-5	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SPA21N50C3XKSA1	Infineon Technologies	HIGH POWER_LEGACY FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34.5W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	560 V	21A (Tc)	10V	3.9V @ 1mA	95 nC @ 10 V	2400 pF @ 25 V	±20V	-	34.5W (Tc)	190mOhm @ 13.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
UPA1759G-E1-A	Renesas	UPA1759 - SWITCHING N-CHANNEL PO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-PowerSOP Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	5A (Tc)	4V, 10V	2.5V @ 1mA	8 nC @ 10 V	190 pF @ 10 V	±20V	-	2W (Ta)	150mOhm @ 2.5A, 10V	150°C	Surface Mount	8-PowerSOP	8-PowerSOIC (0.173", 4.40mm Width)
DMNH6021SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V POWERDI506 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1132 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	44A (Tc)	4.5V, 10V	3V @ 250µA	20.1 nC @ 10 V	1132 pF @ 30 V	±20V	-	1.6W	23mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
NVTFS014P04M8LTAG	onsemi	MOSFET P-CH 40V 11.3A/49A 8WDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 420µA Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Stock16,590	MOSFET (Metal Oxide)	40 V	11.3A (Ta), 49A (Tc)	4.5V, 10V	2.4V @ 420µA	26.5 nC @ 10 V	1734 pF @ 20 V	±20V	-	3.2W (Ta), 61W (Tc)	13.8mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
IXTV86N25T	IXYS	MOSFET N-CH PLUS220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMT10H009LK3-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V TO252 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,260	MOSFET (Metal Oxide)	100 V	90A (Tc)	4.5V, 10V	2.5V @ 250µA	20 nC @ 4.5 V	2309 pF @ 50 V	±20V	-	1.7W (Ta)	9mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63