Page 739 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFU3607-701PBF
Infineon Technologies

MOSFET N CH 75V 56A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,664
IPI60R520CPAKSA1
Infineon Technologies

MOSFET N-CH 600V 6.8A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,880
2N6661JTXL02
Vishay Siliconix

MOSFET N-CH 90V 0.86A TO-205

Package: TO-205AD, TO-39-3 Metal Can

Stock4,928
2N6784
Microsemi Corporation

MOSFET N-CH 200V TO-205AF

Package: TO-205AF Metal Can

Stock5,936
2N6766
Microsemi Corporation

MOSFET N-CH 200V TO-204AE TO-3

Package: TO-204AE

Stock6,112
IXTV102N20T
IXYS

MOSFET N-CH 200V 102A PLUS220

Package: TO-220-3, Short Tab

Stock2,080
APTM20UM09SG
Microsemi Corporation

MOSFET N-CH 200V 195A J3

Package: J3 Module

Stock5,840
APT20N60BC3G
Microsemi Corporation

MOSFET N-CH 600V 20.7A TO-247

Package: TO-247-3

Stock3,088
BSS123ATC
Diodes Incorporated

MOSFET N-CH 100V 170MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock6,864
NDP4050L
Fairchild/ON Semiconductor

MOSFET N-CH 50V 15A TO-220

Package: TO-220-3

Stock4,368
IXTH6N90
IXYS

MOSFET N-CH 900V 6A TO-247

Package: TO-247-3

Stock5,200
NVMFS6B25NLWFT3G
ON Semiconductor

MOSFET N-CH 100V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock6,944
MCH6437-TL-W
ON Semiconductor

MOSFET N-CH 20V 7A MCPH6

Package: 6-SMD, Flat Leads

Stock2,400
APT28M120B2
Microsemi Corporation

MOSFET N-CH 1200V 29A T-MAX

Package: TO-247-3 Variant

Stock3,680
SI4401DDY-T1-GE3
Vishay Siliconix

MOSFET P-CH 40V 16.1A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock135,492
NTMFS5C450NT1G
ON Semiconductor

T6 40V MOSFET

Package: 8-PowerTDFN, 5 Leads

Stock6,384
FDPF045N10A
Fairchild/ON Semiconductor

MOSFET N-CH 100V 67A TO-220-3

Package: TO-220-3 Full Pack

Stock390,408
FDS6692A
Fairchild/ON Semiconductor

MOSFET N-CH 30V 9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock15,612
DMN62D4LFB-7B
Diodes Incorporated

MOSFET BVDSS: 41V~60V X2-DFN1006

Package: -

Stock30,000
G06N10
Goford Semiconductor

N100V,RD(MAX)<240M@10V,VTH1.2V~3

Package: -

Stock14,226

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFU3607-701PBF	Infineon Technologies	MOSFET N CH 75V 56A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3070pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 46A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,664	MOSFET (Metal Oxide)	75V	56A (Tc)	10V	4V @ 100µA	84nC @ 10V	3070pF @ 50V	±20V	-	140W (Tc)	9 mOhm @ 46A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IPI60R520CPAKSA1	Infineon Technologies	MOSFET N-CH 600V 6.8A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,880	MOSFET (Metal Oxide)	600V	6.8A (Tc)	10V	3.5V @ 340µA	31nC @ 10V	630pF @ 100V	±20V	-	66W (Tc)	520 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
2N6661JTXL02	Vishay Siliconix	MOSFET N-CH 90V 0.86A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock4,928	MOSFET (Metal Oxide)	90V	860mA (Tc)	5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	725mW (Ta), 6.25W (Tc)	4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
2N6784	Microsemi Corporation	MOSFET N-CH 200V TO-205AF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	Package: TO-205AF Metal Can	Stock5,936	MOSFET (Metal Oxide)	200V	2.25A (Tc)	10V	4V @ 250µA	8.6nC @ 10V	-	±20V	-	800mW (Ta), 15W (Tc)	1.5 Ohm @ 1.5A, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AF Metal Can
2N6766	Microsemi Corporation	MOSFET N-CH 200V TO-204AE TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	Package: TO-204AE	Stock6,112	MOSFET (Metal Oxide)	200V	30A (Tc)	10V	4V @ 250µA	115nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	90 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-204AE
IXTV102N20T	IXYS	MOSFET N-CH 200V 102A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 750W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock2,080	MOSFET (Metal Oxide)	200V	102A (Tc)	10V	4.5V @ 1mA	114nC @ 10V	6800pF @ 25V	±30V	-	750W (Tc)	23 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS220	TO-220-3, Short Tab
APTM20UM09SG	Microsemi Corporation	MOSFET N-CH 200V 195A J3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 195A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 217nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 74.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	Package: J3 Module	Stock5,840	MOSFET (Metal Oxide)	200V	195A	10V	5V @ 4mA	217nC @ 10V	12300pF @ 25V	±30V	-	780W (Tc)	9 mOhm @ 74.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	Module	J3 Module
APT20N60BC3G	Microsemi Corporation	MOSFET N-CH 600V 20.7A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,088	MOSFET (Metal Oxide)	600V	20.7A (Tc)	10V	3.9V @ 1mA	114nC @ 10V	2440pF @ 25V	±20V	-	208W (Tc)	190 mOhm @ 13.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
BSS123ATC	Diodes Incorporated	MOSFET N-CH 100V 170MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,864	MOSFET (Metal Oxide)	100V	170mA (Ta)	4.5V, 10V	2V @ 1mA	-	25pF @ 25V	±20V	-	360mW (Ta)	6 Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NDP4050L	Fairchild/ON Semiconductor	MOSFET N-CH 50V 15A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock4,368	MOSFET (Metal Oxide)	50V	15A (Tc)	5V, 10V	2V @ 250µA	17nC @ 5V	600pF @ 25V	±16V	-	50W (Tc)	80 mOhm @ 15A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
IXTH6N90	IXYS	MOSFET N-CH 900V 6A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock5,200	MOSFET (Metal Oxide)	900V	6A (Tc)	10V	4.5V @ 250µA	130nC @ 10V	2600pF @ 25V	±20V	-	180W (Tc)	1.8 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
NVMFS6B25NLWFT3G	ON Semiconductor	MOSFET N-CH 100V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 62W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,944	MOSFET (Metal Oxide)	100V	8A (Ta), 33A (Ta)	4.5V, 10V	3V @ 250µA	13.5nC @ 10V	905pF @ 25V	±16V	-	3.6W (Ta), 62W (Tc)	24 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
MCH6437-TL-W	ON Semiconductor	MOSFET N-CH 20V 7A MCPH6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88FL/ MCPH6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock2,400	MOSFET (Metal Oxide)	20V	7A (Ta)	1.8V, 4.5V	1.3V @ 1mA	8.4nC @ 4.5V	660pF @ 10V	±12V	-	1.5W (Ta)	24 mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	SC-88FL/ MCPH6	6-SMD, Flat Leads
APT28M120B2	Microsemi Corporation	MOSFET N-CH 1200V 29A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 560 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock3,680	MOSFET (Metal Oxide)	1200V	29A (Tc)	10V	5V @ 2.5mA	300nC @ 10V	9670pF @ 25V	±30V	-	1135W (Tc)	560 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
SI4401DDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 40V 16.1A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3007pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 10.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock135,492	MOSFET (Metal Oxide)	40V	16.1A (Tc)	4.5V, 10V	2.5V @ 250µA	95nC @ 10V	3007pF @ 20V	±20V	-	2.5W (Ta), 6.3W (Tc)	15 mOhm @ 10.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTMFS5C450NT1G	ON Semiconductor	T6 40V MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 65µA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,384	MOSFET (Metal Oxide)	40V	24A (Ta), 102A (Tc)	10V	3.5V @ 65µA	5.1nC @ 10V	1600pF @ 25V	±20V	-	3.6W (Ta), 68W (Tc)	3.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
FDPF045N10A	Fairchild/ON Semiconductor	MOSFET N-CH 100V 67A TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5270pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 67A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock390,408	MOSFET (Metal Oxide)	100V	67A (Tc)	10V	4V @ 250µA	74nC @ 10V	5270pF @ 50V	±20V	-	43W (Tc)	4.5 mOhm @ 67A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
FDS6692A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.47W (Ta) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock15,612	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	2.5V @ 250µA	29nC @ 10V	1610pF @ 15V	±20V	-	1.47W (Ta)	11.5 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMN62D4LFB-7B	Diodes Incorporated	MOSFET BVDSS: 41V~60V X2-DFN1006 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 407mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X1-DFN1006-3 Package / Case: 3-UFDFN	Package: -	Stock30,000	MOSFET (Metal Oxide)	60 V	407mA (Ta)	5V, 10V	2.5V @ 250µA	1.1 nC @ 10 V	40 pF @ 30 V	±20V	-	500mW	2Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	X1-DFN1006-3	3-UFDFN
G06N10	Goford Semiconductor	N100V,RD(MAX)<240M@10V,VTH1.2V~3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock14,226	MOSFET (Metal Oxide)	100 V	6A (Tc)	4.5V, 10V	3V @ 250µA	6.2 nC @ 10 V	190 pF @ 50 V	±20V	-	25W (Tc)	240mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFP13N60X3	IXYS	DISCRETE MOSFET 13A 600V X3 TO22 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI3440ADV-T1-BE3	Vishay Siliconix	N-CHANNEL 150-V (D-S) MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	1.6A (Ta), 2.2A (Tc)	7.5V, 10V	4V @ 250µA	4 nC @ 10 V	80 pF @ 75 V	±20V	-	2W (Ta), 3.6W (Tc)	380mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SISS72DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 150V 7A/25.5A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	7A (Ta), 25.5A (Tc)	10V	4V @ 250µA	22 nC @ 10 V	550 pF @ 75 V	±20V	-	5.1W (Ta), 65.8W (Tc)	42mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
IPS60R280PFD7SAKMA1	Infineon Technologies	CONSUMER PG-TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 51W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	4.5V @ 180µA	15.3 nC @ 10 V	656 pF @ 400 V	±20V	-	51W (Tc)	280mOhm @ 3.6A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
PMPB08R6ENX	Nexperia USA Inc.	MOSFET N-CH 30V 11A DFN2020M-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock7,344	MOSFET (Metal Oxide)	30 V	11A (Ta)	-	2V @ 250µA	20.6 nC @ 10 V	840 pF @ 15 V	±20V	-	1.9W (Ta), 12.5W (Tc)	10.5mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
IPB65R110CFDATMA1	Infineon Technologies	MOSFET N-CH 650V 31.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	31.2A (Tc)	10V	4.5V @ 1.3mA	118 nC @ 10 V	3240 pF @ 100 V	±20V	-	277.8W (Tc)	110mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SPB21N50C3ATMA1	Infineon Technologies	MOSFET N-CH 560V 21A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock8,709	MOSFET (Metal Oxide)	560 V	21A (Tc)	10V	3.9V @ 1mA	95 nC @ 10 V	2400 pF @ 25 V	±20V	-	208W (Tc)	190mOhm @ 13.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NTD78N03R-001	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-