Page 766 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF3704PBF
Infineon Technologies

MOSFET N-CH 20V 77A TO-220AB

Package: TO-220-3

Stock136,104
IRFR6215TRL
Infineon Technologies

MOSFET P-CH 150V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,980
IRF1404STRR
Infineon Technologies

MOSFET N-CH 40V 162A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,448
IRL1004S
Infineon Technologies

MOSFET N-CH 40V 130A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock18,636
PMZB380XN,315
Nexperia USA Inc.

MOSFET N-CH 30V SGL 3DFN

Package: 3-XFDFN

Stock2,688
2SK2845(TE16L1,Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 900V 1A DP

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock72,000
HUFA75345G3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A TO-247

Package: TO-247-3

Stock7,680
IPP65R280E6
Infineon Technologies

MOSFET N-CH 650V 13.8A TO220

Package: TO-220-3

Stock401,304
DMN3008SFGQ-13
Diodes Incorporated

MOSFET NCH 30V 17.6A POWERDI

Package: 8-PowerVDFN

Stock3,248
BUK9M34-100EX
Nexperia USA Inc.

MOSFET N-CH 100V 29A LFPAK

Package: SOT-1210, 8-LFPAK33 (5-Lead)

Stock5,632
FCH165N60E
Fairchild/ON Semiconductor

MOSFET N-CH 600V 23A TO247

Package: TO-247-3

Stock103,464
2SK326800L
Panasonic Electronic Components

MOSFET N-CH 100V 15A UG-2

Package: U-G2

Stock34,200
RS1E200BNTB
Rohm Semiconductor

MOSFET N-CH 30V 20A 8HSOP

Package: 8-PowerTDFN

Stock2,752
FDMC8882
Fairchild/ON Semiconductor

MOSFET N-CH 30V 8-MLP

Package: 8-PowerWDFN

Stock145,572
BUK7E2R6-60E,127
Nexperia USA Inc.

MOSFET N-CH 60V 120A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock44,490
IRFSL9N60APBF
Vishay Siliconix

MOSFET N-CH 600V 9.2A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock61,488
BSS138TA
Diodes Incorporated

MOSFET N-CH 50V 200MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock588,852
RJK1028DSP-00-J5
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
IAUC120N06S5N017ATMA1
Infineon Technologies

MOSFET N-CH 60V 120A TDSON-8-43

Package: -

Stock25,239
DI049N06PTK-AQ
Diotec Semiconductor

IC

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3704PBF	Infineon Technologies	MOSFET N-CH 20V 77A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock136,104	MOSFET (Metal Oxide)	20V	77A (Tc)	4.5V, 10V	3V @ 250µA	19nC @ 4.5V	1996pF @ 10V	±20V	-	87W (Tc)	9 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFR6215TRL	Infineon Technologies	MOSFET P-CH 150V 13A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,980	MOSFET (Metal Oxide)	150V	13A (Tc)	10V	4V @ 250µA	66nC @ 10V	860pF @ 25V	±20V	-	110W (Tc)	295 mOhm @ 6.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF1404STRR	Infineon Technologies	MOSFET N-CH 40V 162A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,448	MOSFET (Metal Oxide)	40V	162A (Tc)	10V	4V @ 250µA	200nC @ 10V	7360pF @ 25V	±20V	-	3.8W (Ta), 200W (Tc)	4 mOhm @ 95A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL1004S	Infineon Technologies	MOSFET N-CH 40V 130A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,636	MOSFET (Metal Oxide)	40V	130A (Tc)	4.5V, 10V	1V @ 250µA	100nC @ 4.5V	5330pF @ 25V	±16V	-	3.8W (Ta), 200W (Tc)	6.5 mOhm @ 78A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PMZB380XN,315	Nexperia USA Inc.	MOSFET N-CH 30V SGL 3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 930mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006B (0.6x1) Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock2,688	MOSFET (Metal Oxide)	30V	930mA (Ta)	2.5V, 4.5V	1.5V @ 250µA	0.87nC @ 4.5V	56pF @ 25V	±12V	-	360mW (Ta), 2.7W (Tc)	460 mOhm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	3-DFN1006B (0.6x1)	3-XFDFN
2SK2845(TE16L1,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 1A DP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DP Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock72,000	MOSFET (Metal Oxide)	900V	1A (Ta)	10V	4V @ 1mA	15nC @ 10V	350pF @ 25V	±30V	-	40W (Tc)	9 Ohm @ 500mA, 10V	150°C (TJ)	Surface Mount	DP	TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA75345G3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 275nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 325W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,680	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	275nC @ 20V	4000pF @ 25V	±20V	-	325W (Tc)	7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
IPP65R280E6	Infineon Technologies	MOSFET N-CH 650V 13.8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock401,304	MOSFET (Metal Oxide)	650V	13.8A (Tc)	10V	3.5V @ 440µA	45nC @ 10V	950pF @ 100V	±20V	-	104W (Tc)	280 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
DMN3008SFGQ-13	Diodes Incorporated	MOSFET NCH 30V 17.6A POWERDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3690pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,248	MOSFET (Metal Oxide)	30V	17.6A (Ta), 62A (Tc)	4.5V, 10V	2.3V @ 250µA	86nC @ 10V	3690pF @ 10V	±20V	-	900mW (Ta)	4.4 mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerVDFN
BUK9M34-100EX	Nexperia USA Inc.	MOSFET N-CH 100V 29A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2844pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: SOT-1210, 8-LFPAK33 (5-Lead)	Stock5,632	MOSFET (Metal Oxide)	100V	29A (Tc)	5V	2.1V @ 1mA	24.7nC @ 5V	2844pF @ 25V	±10V	-	79W (Tc)	34 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
FCH165N60E	Fairchild/ON Semiconductor	MOSFET N-CH 600V 23A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2434pF @ 380V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	600V	23A (Tc)	10V	3.5V @ 250µA	75nC @ 10V	2434pF @ 380V	±20V	-	227W (Tc)	165 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
2SK326800L	Panasonic Electronic Components	MOSFET N-CH 100V 15A UG-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DL Package / Case: U-G2	Package: U-G2	Stock34,200	MOSFET (Metal Oxide)	100V	15A (Tc)	10V	4V @ 1mA	-	960pF @ 10V	±20V	-	1W (Ta), 20W (Tc)	100 mOhm @ 12A, 10V	150°C (TJ)	Surface Mount	U-DL	U-G2
RS1E200BNTB	Rohm Semiconductor	MOSFET N-CH 30V 20A 8HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,752	MOSFET (Metal Oxide)	30V	20A (Ta)	4.5V, 10V	2.5V @ 1mA	59nC @ 10V	3100pF @ 15V	±20V	-	3W (Ta), 25W (Tc)	3.9 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
FDMC8882	Fairchild/ON Semiconductor	MOSFET N-CH 30V 8-MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 18W (Tc) Rds On (Max) @ Id, Vgs: 14.3 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock145,572	MOSFET (Metal Oxide)	30V	10.5A (Ta), 16A (Tc)	4.5V, 10V	2.5V @ 250µA	20nC @ 10V	945pF @ 15V	±20V	-	2.3W (Ta), 18W (Tc)	14.3 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
BUK7E2R6-60E,127	Nexperia USA Inc.	MOSFET N-CH 60V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock44,490	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 1mA	158nC @ 10V	11180pF @ 25V	±20V	-	349W (Tc)	2.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL9N60APBF	Vishay Siliconix	MOSFET N-CH 600V 9.2A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock61,488	MOSFET (Metal Oxide)	600V	9.2A (Tc)	10V	4V @ 250µA	49nC @ 10V	1400pF @ 25V	±30V	-	170W (Tc)	750 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
BSS138TA	Diodes Incorporated	MOSFET N-CH 50V 200MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock588,852	MOSFET (Metal Oxide)	50V	200mA (Ta)	10V	1.5V @ 250µA	-	50pF @ 10V	±20V	-	300mW (Ta)	3.5 Ohm @ 220mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
RJK1028DSP-00-J5	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IAUC120N06S5N017ATMA1	Infineon Technologies	MOSFET N-CH 60V 120A TDSON-8-43 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.4V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-43 Package / Case: 8-PowerTDFN	Package: -	Stock25,239	MOSFET (Metal Oxide)	60 V	120A (Tj)	-	3.4V @ 94µA	95.9 nC @ 10 V	6952 pF @ 30 V	±20V	-	167W (Tc)	1.7mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-43	8-PowerTDFN
DI049N06PTK-AQ	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 65 V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (3x3) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	65 V	49A (Tc)	4.5V, 10V	2.5V @ 250µA	31 nC @ 10 V	1691 pF @ 30 V	±20V	-	25W (Tc)	6.1mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (3x3)	8-PowerVDFN
SQJ138EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 330A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock8,499	MOSFET (Metal Oxide)	40 V	330A (Tc)	10V	3.5V @ 250µA	81 nC @ 10 V	4715 pF @ 25 V	±20V	-	312W (Tc)	1.8mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
GSFN3908	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 48A, 30V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PPAK (3.1x3.05) Package / Case: 8-PowerVDFN	Package: -	Stock17,820	MOSFET (Metal Oxide)	30 V	48A (Tc)	4.5V, 10V	2.5V @ 250µA	12 nC @ 4.5 V	1700 pF @ 25 V	±20V	-	35W (Tc)	8.5mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PPAK (3.1x3.05)	8-PowerVDFN
STF22N60DM6	STMicroelectronics	MOSFET N-CH 600V 15A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	15A (Tc)	10V	4.75V @ 250µA	20 nC @ 10 V	800 pF @ 100 V	±25V	-	30W (Tc)	230mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
DMP2110UW-13	Diodes Incorporated	MOSFET P-CH 20V 2A SOT323 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 6 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 490mW Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	2A (Ta)	1.8V, 4.5V	900mV @ 250µA	6 nC @ 4.5 V	443 pF @ 6 V	±12V	-	490mW	100mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
TK190A65Z-S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 15A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 610µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: -	Stock468	MOSFET (Metal Oxide)	650 V	15A (Ta)	10V	4V @ 610µA	25 nC @ 10 V	1370 pF @ 300 V	±30V	-	40W (Tc)	190mOhm @ 7.5A, 10V	150°C	Through Hole	TO-220SIS	TO-220-3 Full Pack
IPP60R600C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 7.3A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	3.5V @ 200µA	20.5 nC @ 10 V	440 pF @ 100 V	±20V	-	63W (Tc)	600mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
2SK2631-TL-E-ON	onsemi	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCAC80P06Y-TP	Micro Commercial Co	P-CHANNEL MOSFET, DFN5060 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 120W (Tj) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Stock30,717	MOSFET (Metal Oxide)	60 V	80A	10V	4V @ 250µA	82 nC @ 10 V	5450 pF @ 30 V	±18V	-	120W (Tj)	8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN