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Infineon Technologies |
MOSFET N-CH 60V 270A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,304 |
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MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | ±16V | - | 380W (Tc) | 2.4 mOhm @ 165A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 37A DIRECTFET-MX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 197A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 6560pF @ 13V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 37A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MX
- Package / Case: DirectFET? Isometric MX
|
Package: DirectFET? Isometric MX |
Stock16,800 |
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MOSFET (Metal Oxide) | 25V | 37A (Ta), 197A (Tc) | 4.5V, 10V | 2.35V @ 150µA | 75nC @ 4.5V | 6560pF @ 13V | ±20V | Schottky Diode (Body) | 2.8W (Ta), 78W (Tc) | 1.3 mOhm @ 37A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.1A USV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
- Vgs (Max): 10V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 2.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: USV
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
|
Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock3,632 |
|
MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 2.5V | - | - | 8.5pF @ 3V | 10V | - | 200mW (Ta) | 12 Ohm @ 10mA, 2.5V | 150°C (TJ) | Surface Mount | USV | 5-TSSOP, SC-70-5, SOT-353 |
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Microsemi Corporation |
MOSFET N-CH 800V 11A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 680µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 [K]
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock5,216 |
|
MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 3.9V @ 680µA | 60nC @ 10V | 1585pF @ 25V | ±20V | - | 156W (Tc) | 450 mOhm @ 7.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 73A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock2,976 |
|
MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 4V @ 100µA | 140nC @ 10V | 3550pF @ 50V | ±20V | - | 190W (Tc) | 14 mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Microsemi Corporation |
MOSFET N-CH 500V 335A SP6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 335A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 800nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 42200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3290W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 167.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP6
- Package / Case: SP6
|
Package: SP6 |
Stock5,840 |
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MOSFET (Metal Oxide) | 500V | 335A | 10V | 5V @ 20mA | 800nC @ 10V | 42200pF @ 25V | ±30V | - | 3290W (Tc) | 15 mOhm @ 167.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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IXYS |
MOSFET N-CH 1700V 1A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1700V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 290W (Tc)
- Rds On (Max) @ Id, Vgs: 16 Ohm @ 500mA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,048 |
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MOSFET (Metal Oxide) | 1700V | 1A (Tc) | 10V | - | 47nC @ 5V | 3090pF @ 25V | ±20V | Depletion Mode | 290W (Tc) | 16 Ohm @ 500mA, 0V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Central Semiconductor Corp |
MOSFET N-CH 60V 0.28A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): 40V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,864 |
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MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 5V, 10V | 2.5V @ 250µA | 0.59nC @ 4.5V | 50pF @ 25V | 40V | - | 350mW (Ta) | 2 Ohm @ 500mA, 10V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 20V 660MA SOT-723
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 16V
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 310mW (Ta)
- Rds On (Max) @ Id, Vgs: 480 mOhm @ 780mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-723
- Package / Case: SOT-723
|
Package: SOT-723 |
Stock1,345,344 |
|
MOSFET (Metal Oxide) | 20V | 660mA (Ta) | 1.5V, 4.5V | 1.2V @ 250µA | - | 170pF @ 16V | ±6V | - | 310mW (Ta) | 480 mOhm @ 780mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | SOT-723 |
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|
Infineon Technologies |
MOSFET N-CH 55V 64A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 34A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB Full-Pak
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock420,612 |
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MOSFET (Metal Oxide) | 55V | 64A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | ±20V | - | 63W (Tc) | 8 mOhm @ 34A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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|
Infineon Technologies |
MOSFET N-CH 150V 24A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 95 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock221,352 |
|
MOSFET (Metal Oxide) | 150V | 24A (Tc) | 10V | 5V @ 250µA | 45nC @ 10V | 890pF @ 25V | ±30V | - | 140W (Tc) | 95 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Microchip Technology |
MOSFET N-CH 25V 8PDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 12.5V
- Vgs (Max): +10V, -8V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta)
- Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock7,808 |
|
MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 1.6V @ 250µA | 29nC @ 4.5V | 2310pF @ 12.5V | +10V, -8V | - | 2.2W (Ta) | 2.3 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 6.8A U-DFN2020-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1241pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta)
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type E)
- Package / Case: 6-UDFN Exposed Pad
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Package: 6-UDFN Exposed Pad |
Stock5,616 |
|
MOSFET (Metal Oxide) | 30V | 6.8A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 22nC @ 10V | 1241pF @ 15V | ±20V | - | 660mW (Ta) | 32 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
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STMicroelectronics |
MOSFET N-CH 600V 13A I2PAK FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAKFP (TO-281)
- Package / Case: TO-262-3 Full Pack, I2Pak
|
Package: TO-262-3 Full Pack, I2Pak |
Stock15,144 |
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MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 4.5V @ 100µA | 92nC @ 10V | 2030pF @ 25V | ±30V | - | 35W (Tc) | 550 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I2Pak |
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Vishay Siliconix |
MOSFET P-CH 400V 1.8A I-PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 7 Ohm @ 1.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251AA
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6,688 |
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MOSFET (Metal Oxide) | 400V | 1.8A (Tc) | 10V | 4V @ 250µA | 13nC @ 10V | 270pF @ 25V | ±20V | - | 50W (Tc) | 7 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 20V 3.8A SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
- Rds On (Max) @ Id, Vgs: 66 mOhm @ 2.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock649,200 |
|
MOSFET (Metal Oxide) | 20V | 3.8A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 23nC @ 8V | 561pF @ 10V | ±8V | - | 960mW (Ta), 1.7W (Tc) | 66 mOhm @ 2.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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|
Nexperia USA Inc. |
MOSFET P-CH 30V SOT883
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 122pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
- Rds On (Max) @ Id, Vgs: 510 mOhm @ 1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006-3
- Package / Case: SC-101, SOT-883
|
Package: SC-101, SOT-883 |
Stock234,384 |
|
MOSFET (Metal Oxide) | 30V | 1A (Ta) | 1.5V, 4.5V | 950mV @ 250µA | 1.4nC @ 4.5V | 122pF @ 15V | ±8V | - | 350mW (Ta), 6.25W (Tc) | 510 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
|
|
EPC |
TRANS GAN 100V 36A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 50V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die Outline (11-Solder Bar)
- Package / Case: Die
|
Package: Die |
Stock630,336 |
|
GaNFET (Gallium Nitride) | 100V | 36A (Ta) | 5V | 2.5V @ 5mA | 9nC @ 5V | 900pF @ 50V | +6V, -4V | - | - | 7 mOhm @ 25A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (11-Solder Bar) | Die |
|
|
Vishay Siliconix |
MOSFET P-CH 8V 12A SC-70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 4V
- Vgs (Max): ±5V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
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Package: PowerPAK? SC-70-6 |
Stock703,812 |
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MOSFET (Metal Oxide) | 8V | 12A (Tc) | 1.2V, 4.5V | 800mV @ 250µA | 50nC @ 5V | 2300pF @ 4V | ±5V | - | 3.5W (Ta), 19W (Tc) | 16 mOhm @ 8.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
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Infineon Technologies |
SICFET N-CH 1.2KV 4.7A TO263
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 800 V
- Vgs (Max): +18V, -15V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 468mOhm @ 2A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock4,251 |
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SiCFET (Silicon Carbide) | 1200 V | 4.7A (Tc) | - | 5.7V @ 1mA | 5.9 nC @ 18 V | 196 pF @ 800 V | +18V, -15V | - | 65W (Tc) | 468mOhm @ 2A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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MOSLEADER |
N 30V 4.4A SOT23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Harris Corporation |
P-CHANNEL POWER MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 6A (Tc) | 10V | 4V @ 250µA | - | 800 pF @ 25 V | ±20V | - | 60W (Tc) | 600mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Wolfspeed, Inc. |
SIC, MOSFET 45M, 650V TO-263-7XL
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
- Vgs (Max): +19V, -8V
- FET Feature: -
- Power Dissipation (Max): 147W (Tc)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock2,400 |
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SiC (Silicon Carbide Junction Transistor) | 650 V | 47A (Tc) | 15V | 3.6V @ 4.84mA | 61 nC @ 15 V | 1621 pF @ 400 V | +19V, -8V | - | 147W (Tc) | 60mOhm @ 17.6A, 15V | -40°C ~ 150°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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onsemi |
MOSFET N-CH 60V 60.5A/464A 8DFNW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 60.5A (Ta), 464A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 11535 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 294.6W (Tc)
- Rds On (Max) @ Id, Vgs: 0.72mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFNW (8.3x8.4)
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 60.5A (Ta), 464A (Tc) | 10V | 4V @ 250µA | 152 nC @ 10 V | 11535 pF @ 30 V | ±20V | - | 5W (Ta), 294.6W (Tc) | 0.72mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
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Harris Corporation |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 750mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 400 V | 7A (Tc) | 10V | 4V @ 1mA | - | 1600 pF @ 25 V | ±20V | - | 75W (Tc) | 750mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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NextGen Components |
MOSFET TO-220F N 650V 4A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 4A (Tc) | 10V | - | 12 nC @ 10 V | - | ±30V | - | - | 2.8Ohm @ 2A, 10V | - | - | - | - |
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Vishay Siliconix |
N-CHANNEL 40-V (D-S) MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock18,000 |
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MOSFET (Metal Oxide) | 40 V | 64.6A (Ta), 100A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 204 nC @ 10 V | 10500 pF @ 20 V | +20V, -16V | - | 6.25W (Ta), 125W (Tc) | 0.88mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |