Page 795 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPS50R520CP
Infineon Technologies

MOSFET N-CH 550V 7.1A TO-251

Package: TO-251-3 Stub Leads, IPak

Stock6,800
SPP100N04S2L-03
Infineon Technologies

MOSFET N-CH 40V 100A TO-220

Package: TO-220-3

Stock3,072
SPN02N60C3 E6433
Infineon Technologies

MOSFET N-CH 650V 0.4A SOT-223

Package: TO-261-4, TO-261AA

Stock7,136
AO4485L_102
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 40V 10A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,720
2SK4177-DL-E
ON Semiconductor

MOSFET N-CH 1500V 2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,320
FDD16AN08A0_NF054
Fairchild/ON Semiconductor

MOSFET N-CH 75V 50A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,696
HUFA75345S3S
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,864
FQPF12N60CT
Fairchild/ON Semiconductor

MOSFET N-CH 600V 12A TO-220F

Package: TO-220-3 Full Pack

Stock6,800
HUFA75307P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 15A TO-220AB

Package: TO-220-3

Stock5,424
FQP6P25
Fairchild/ON Semiconductor

MOSFET P-CH 250V 6A TO-220

Package: TO-220-3

Stock123,828
NTP4302G
ON Semiconductor

MOSFET N-CH 30V 74A TO220AB

Package: TO-220-3

Stock4,096
IPD60R360P7SAUMA1
Infineon Technologies

CONSUMER

Package: -

Stock7,616
IXFH80N20Q
IXYS

MOSFET N-CH 200V 80A TO-247AD

Package: TO-247-3

Stock4,928
NTMFS4937NCT3G
ON Semiconductor

MOSFET N-CH 30V 70A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock4,288
NVD3055-150T4G-VF01
ON Semiconductor

MOSFET N-CH 60V 9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,464
FDP39N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 39A TO-220

Package: TO-220-3

Stock163,476
IPP60R099C6
Infineon Technologies

MOSFET N-CH 600V 37.9A TO220

Package: TO-220-3

Stock398,508
STW43NM60ND
STMicroelectronics

MOSFET N-CH 600V 35A TO-247

Package: TO-247-3

Stock163,800
SIHG20N50C-E3
Vishay Siliconix

MOSFET N-CH 500V 20A TO247

Package: TO-247-3

Stock117,348
STD5NK40ZT4
STMicroelectronics

MOSFET N-CH 400V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock328,932

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPS50R520CP	Infineon Technologies	MOSFET N-CH 550V 7.1A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock6,800	MOSFET (Metal Oxide)	550V	7.1A (Tc)	10V	3.5V @ 250µA	17nC @ 10V	680pF @ 100V	±20V	-	66W (Tc)	520 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
SPP100N04S2L-03	Infineon Technologies	MOSFET N-CH 40V 100A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock3,072	MOSFET (Metal Oxide)	40V	100A (Tc)	4.5V, 10V	2V @ 250µA	230nC @ 10V	8000pF @ 25V	±20V	-	300W (Tc)	3.3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
SPN02N60C3 E6433	Infineon Technologies	MOSFET N-CH 650V 0.4A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock7,136	MOSFET (Metal Oxide)	650V	400mA (Ta)	10V	3.9V @ 80µA	13nC @ 10V	200pF @ 25V	±20V	-	1.8W (Ta)	2.5 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
AO4485L_102	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 40V 10A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,720	MOSFET (Metal Oxide)	40V	10A (Ta)	4.5V, 10V	2.5V @ 250µA	55nC @ 10V	3000pF @ 20V	±20V	-	1.7W (Ta)	15 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
2SK4177-DL-E	ON Semiconductor	MOSFET N-CH 1500V 2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMP-FD Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,320	MOSFET (Metal Oxide)	1500V	2A (Ta)	10V	-	37.5nC @ 10V	380pF @ 30V	±20V	-	80W (Tc)	13 Ohm @ 1A, 10V	150°C (TJ)	Surface Mount	SMP-FD	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDD16AN08A0_NF054	Fairchild/ON Semiconductor	MOSFET N-CH 75V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1874pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,696	MOSFET (Metal Oxide)	75V	9A (Ta), 50A (Tc)	6V, 10V	4V @ 250µA	47nC @ 10V	1874pF @ 25V	±20V	-	135W (Tc)	16 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA75345S3S	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 275nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 325W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,864	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	275nC @ 20V	4000pF @ 25V	±20V	-	325W (Tc)	7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF12N60CT	Fairchild/ON Semiconductor	MOSFET N-CH 600V 12A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 51W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,800	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	4V @ 250µA	63nC @ 10V	2290pF @ 25V	±30V	-	51W (Tc)	650 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
HUFA75307P3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 15A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,424	MOSFET (Metal Oxide)	55V	15A (Tc)	10V	4V @ 250µA	20nC @ 20V	250pF @ 25V	±20V	-	45W (Tc)	90 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQP6P25	Fairchild/ON Semiconductor	MOSFET P-CH 250V 6A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock123,828	MOSFET (Metal Oxide)	250V	6A (Tc)	10V	5V @ 250µA	27nC @ 10V	780pF @ 25V	±30V	-	90W (Tc)	1.1 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
NTP4302G	ON Semiconductor	MOSFET N-CH 30V 74A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,096	MOSFET (Metal Oxide)	30V	74A (Tc)	4.5V, 10V	3V @ 250µA	28nC @ 4.5V	2400pF @ 24V	±20V	-	80W (Tc)	9.3 mOhm @ 37A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPD60R360P7SAUMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,616	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFH80N20Q	IXYS	MOSFET N-CH 200V 80A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock4,928	MOSFET (Metal Oxide)	200V	80A (Tc)	10V	4V @ 4mA	180nC @ 10V	4600pF @ 25V	±20V	-	360W (Tc)	28 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
NTMFS4937NCT3G	ON Semiconductor	MOSFET N-CH 30V 70A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2516pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock4,288	MOSFET (Metal Oxide)	30V	10.2A (Ta)	4.5V, 10V	2.2V @ 250µA	31nC @ 10V	2516pF @ 15V	±20V	-	-	4 mOhm @ 30A, 10V	-	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVD3055-150T4G-VF01	ON Semiconductor	MOSFET N-CH 60V 9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj) Rds On (Max) @ Id, Vgs: 150 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,464	MOSFET (Metal Oxide)	60V	9A (Ta)	10V	4V @ 250µA	15nC @ 10V	280pF @ 25V	±20V	-	1.5W (Ta), 28.8W (Tj)	150 mOhm @ 4.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FDP39N20	Fairchild/ON Semiconductor	MOSFET N-CH 200V 39A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 251W (Tc) Rds On (Max) @ Id, Vgs: 66 mOhm @ 19.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock163,476	MOSFET (Metal Oxide)	200V	39A (Tc)	10V	5V @ 250µA	49nC @ 10V	2130pF @ 25V	±30V	-	251W (Tc)	66 mOhm @ 19.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPP60R099C6	Infineon Technologies	MOSFET N-CH 600V 37.9A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.21mA Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 18.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock398,508	MOSFET (Metal Oxide)	600V	37.9A (Tc)	10V	3.5V @ 1.21mA	119nC @ 10V	2660pF @ 100V	±20V	-	278W (Tc)	99 mOhm @ 18.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
STW43NM60ND	STMicroelectronics	MOSFET N-CH 600V 35A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 88 mOhm @ 17.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock163,800	MOSFET (Metal Oxide)	600V	35A (Tc)	10V	5V @ 250µA	145nC @ 10V	4300pF @ 50V	±25V	-	255W (Tc)	88 mOhm @ 17.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
SIHG20N50C-E3	Vishay Siliconix	MOSFET N-CH 500V 20A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2942pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock117,348	MOSFET (Metal Oxide)	500V	20A (Tc)	10V	5V @ 250µA	76nC @ 10V	2942pF @ 25V	±30V	-	250W (Tc)	270 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
STD5NK40ZT4	STMicroelectronics	MOSFET N-CH 400V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock328,932	MOSFET (Metal Oxide)	400V	3A (Tc)	10V	4.5V @ 50µA	17nC @ 10V	305pF @ 25V	±30V	-	45W (Tc)	1.8 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AP2309GN-HF-ML	MOSLEADER	Single P -30V -3.7A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMTH10H032LPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI50 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.4W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Stock7,491	MOSFET (Metal Oxide)	100 V	33A (Tc)	4.5V, 10V	2.5V @ 250µA	11.9 nC @ 10 V	683 pF @ 50 V	±20V	-	3.4W (Ta), 68W (Tc)	32mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
FCD260N65S3	onsemi	MOSFET N-CH 650V 12A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,410	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	4.5V @ 1.2mA	24 nC @ 10 V	1010 pF @ 400 V	±30V	-	90W (Tc)	260mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
CMPDM302PH-BK	Central Semiconductor Corp	MOSFET P-CH 30V 2.4A SOT23F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V Vgs (Max): 12V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	2.4A (Ta)	2.5V, 4.5V	1.4V @ 250µA	9.6 nC @ 5 V	800 pF @ 10 V	12V	-	350mW (Ta)	91mOhm @ 1.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
BSC0901NSATMA1	Infineon Technologies	MOSFET N-CH 30V 28A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	Package: -	Stock97,470	MOSFET (Metal Oxide)	30 V	28A (Ta), 100A (Tc)	4.5V, 10V	2.2V @ 250µA	44 nC @ 10 V	2800 pF @ 15 V	±20V	-	2.5W (Ta), 69W (Tc)	1.9mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-5	8-PowerTDFN
IMZA65R020M2HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCAC10H04YA-TP	Micro Commercial Co	MOSFET N-CH DFN5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5005 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	100A	4.5V, 10V	2.5V @ 250µA	81 nC @ 10 V	5005 pF @ 20 V	±20V	-	35W	2.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
XP10TN135K	YAGEO XSEMI	MOSFET N-CH 100V 3A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.78W (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock2,970	MOSFET (Metal Oxide)	100 V	3A (Ta)	4.5V, 10V	3V @ 250µA	20 nC @ 10 V	980 pF @ 25 V	±20V	-	2.78W (Ta)	135mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA