|
|
|
Infineon Technologies |
MOSFET N-CH 55V 61A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 91W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,040 |
|
MOSFET (Metal Oxide) | 55V | 61A (Tc) | 10V | 4V @ 250µA | 64nC @ 10V | 1720pF @ 25V | ±20V | - | 91W (Tc) | 11 mOhm @ 37A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 125µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock18,804 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 125µA | 80nC @ 10V | 3140pF @ 25V | ±20V | - | 190W (Tc) | 9.1 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 100A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock22,728 |
|
MOSFET (Metal Oxide) | 20V | 100A (Tc) | 4.5V, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | ±20V | - | 2.5W (Ta), 120W (Tc) | 6.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH 150V 13A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,848 |
|
MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | ±20V | - | 110W (Tc) | 295 mOhm @ 6.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V 35A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 27.7W (Tc)
- Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock70,800 |
|
MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 45nC @ 10V | 1600pF @ 15V | ±20V | - | 5W (Ta), 27.7W (Tc) | 6.3 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 250V 0.6A TO-92
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 300mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,120 |
|
MOSFET (Metal Oxide) | 250V | 600mA (Ta) | 10V | 4V @ 250µA | 10.5nC @ 10V | 275pF @ 25V | ±30V | - | 1.8W (Ta) | 2 Ohm @ 300mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
NXP |
MOSFET N-CH 25V 40A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,568 |
|
MOSFET (Metal Oxide) | 25V | 40A (Tc) | 5V, 10V | 2V @ 1mA | 11nC @ 4.5V | 970pF @ 12V | ±20V | - | 107W (Tc) | 9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 5A TO-3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: SC-94
|
Package: SC-94 |
Stock2,144 |
|
MOSFET (Metal Oxide) | 800V | 5A (Tc) | 10V | 5V @ 250µA | 52nC @ 10V | 1850pF @ 25V | ±30V | - | 96W (Tc) | 1.5 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | SC-94 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 2.8A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 28.4W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,424 |
|
MOSFET (Metal Oxide) | 650V | 2.8A (Tc) | 10V | 4.5V @ 100µA | 10nC @ 10V | 262pF @ 100V | ±20V | - | 28.4W (Tc) | 1.4 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
IXYS |
MOSFET N-CH 600V 13A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock7,600 |
|
MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 3.5V @ 440µA | 30nC @ 10V | 1100pF @ 100V | ±20V | Super Junction | - | 300 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
ON Semiconductor |
MOSFET P-CH 60V 12A TP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 15W (Tc)
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TP
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock2,896 |
|
MOSFET (Metal Oxide) | 60V | 12A (Ta) | 4V, 10V | - | 26nC @ 10V | 1150pF @ 20V | ±20V | - | 1W (Ta), 15W (Tc) | 62 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TP | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 20V SC-89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 220mW (Ta)
- Rds On (Max) @ Id, Vgs: 420 mOhm @ 500mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89-3
- Package / Case: SC-89, SOT-490
|
Package: SC-89, SOT-490 |
Stock3,712 |
|
MOSFET (Metal Oxide) | 20V | - | 1.5V, 4.5V | 1V @ 250µA | 2.7nC @ 8V | 43pF @ 10V | ±8V | - | 220mW (Ta) | 420 mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
|
|
|
IXYS |
MOSFET N-CH 500V 120A PLUS264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1890W (Tc)
- Rds On (Max) @ Id, Vgs: 43 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264?
- Package / Case: TO-264-3, TO-264AA
|
Package: TO-264-3, TO-264AA |
Stock4,096 |
|
MOSFET (Metal Oxide) | 500V | 120A (Tc) | 10V | 5V @ 8mA | 300nC @ 10V | 19000pF @ 25V | ±30V | - | 1890W (Tc) | 43 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS264? | TO-264-3, TO-264AA |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 43A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 175nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 43A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock43,140 |
|
MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 4V @ 250µA | 175nC @ 20V | 2730pF @ 25V | ±20V | - | 230W (Tc) | 42 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 110A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6655pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 176W (Tj)
- Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,104 |
|
MOSFET (Metal Oxide) | 60V | 110A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 6655pF @ 30V | ±20V | - | 176W (Tj) | 2.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Nexperia USA Inc. |
MOSFET N-CH 25V 100A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 92nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 6150pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock5,568 |
|
MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V | 950mV @ 1mA | 92nC @ 4.5V | 6150pF @ 10V | ±10V | - | 62.5W (Tc) | 3 mOhm @ 25A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
|
|
Microchip Technology |
MOSFET P-CH 40V 0.16A SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock196,800 |
|
MOSFET (Metal Oxide) | 40V | 160mA (Tj) | 4.5V, 10V | 2V @ 1mA | - | 60pF @ 25V | ±20V | - | 360mW (Ta) | 6 Ohm @ 500mA, 10V | -55°C ~ 150°C | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Nexperia USA Inc. |
MOSFET N-CH 55V 55A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 2920pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 114W (Tc)
- Rds On (Max) @ Id, Vgs: 17.6 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock53,628 |
|
MOSFET (Metal Oxide) | 55V | 55A (Tc) | 4.5V, 10V | 2V @ 1mA | - | 2920pF @ 25V | ±10V | - | 114W (Tc) | 17.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 120A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock390,000 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 200µA | 250nC @ 10V | 20000pF @ 20V | ±20V | - | 250W (Tc) | 1.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
STMicroelectronics |
MOSFET N-CH 60V 24A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock950,892 |
|
MOSFET (Metal Oxide) | 60V | 24A (Tc) | 10V | 4V @ 250µA | 31nC @ 10V | 690pF @ 25V | ±20V | - | 60W (Tc) | 40 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Renesas Electronics Corporation |
MOSFET N-CH 30V 45A 8WPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 10 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WPAK
- Package / Case: 8-PowerWDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 45A (Ta) | - | - | 25 nC @ 4.5 V | 3850 pF @ 10 V | - | - | 50W (Tc) | 3.1mOhm @ 22.5A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
|
|
|
Nexperia USA Inc. |
MOSFET N-CH 65V 75A D2PAK-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 65 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 59.6 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 25 V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 171W (Ta)
- Rds On (Max) @ Id, Vgs: 8.3mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 65 V | 75A (Ta) | 4.5V, 10V | 2V @ 1mA | 59.6 nC @ 5 V | 4170 pF @ 25 V | ±15V | - | 171W (Ta) | 8.3mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-7, D2PAK (6 Leads + Tab) |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 75µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
Package: - |
Stock13,356 |
|
MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 6V, 10V | 3.5V @ 75µA | 55 nC @ 10 V | 3980 pF @ 50 V | ±20V | - | 125W (Tc) | 8.3mOhm @ 73A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
|
|
|
Diodes Incorporated |
MOSFET N-CH 30V 3.9A X4DSN1006-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 790mW
- Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X4-DSN1006-3
- Package / Case: 3-XFDFN
|
Package: - |
Stock19,950 |
|
MOSFET (Metal Oxide) | 30 V | 3.9A (Ta) | 1.8V, 8V | 1.1V @ 250µA | 1.677 nC @ 4.5 V | 192 pF @ 15 V | ±12V | - | 790mW | 60mOhm @ 500mA, 8V | -55°C ~ 150°C (TJ) | Surface Mount | X4-DSN1006-3 | 3-XFDFN |
|
|
|
Vishay Siliconix |
MOSFET N-CH 100V 150A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 3.18mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: - |
Stock1,965 |
|
MOSFET (Metal Oxide) | 100 V | 150A (Tc) | 7.5V, 10V | 4V @ 250µA | 214 nC @ 10 V | 10870 pF @ 50 V | ±20V | - | 375W (Tc) | 3.18mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Rohm Semiconductor |
HIGH-SPEED SWITCHING, NCH 650V 1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 124W (Tc)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock7,485 |
|
MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 5V @ 320µA | 22 nC @ 10 V | 760 pF @ 25 V | ±20V | - | 124W (Tc) | 400mOhm @ 3.8A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET P-CHANNEL 30V 6A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 6A (Ta) | 4.5V, 10V | 1.5V @ 250µA | 16 nC @ 10 V | 495 pF @ 15 V | ±20V | - | 2.5W (Ta) | 45mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Micro Commercial Co |
MOSFET P-CH DFN5060
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50A
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9570 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35W
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060
- Package / Case: 8-PowerTDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 50A | 4.5V, 10V | 2V @ 250µA | 160 nC @ 10 V | 9570 pF @ 15 V | ±20V | - | 35W | 4.6mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
0
Login/Register
BOM
Cart
