Page 807 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPP048N06L G
Infineon Technologies

MOSFET N-CH 60V 100A TO-220

Package: TO-220-3

Stock5,616
RJK1053DPB-00#J5
Renesas Electronics America

MOSFET N-CH 100V 25A LFPAK

Package: SC-100, SOT-669

Stock79,608
BUK9610-55A,118
NXP

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,032
IPA65R280C6XKSA1
Infineon Technologies

MOSFET N-CH 650V 13.8A TO220

Package: TO-220-3 Full Pack

Stock5,296
SPU03N60S5BKMA1
Infineon Technologies

MOSFET N-CH 600V 3.2A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,416
APT56M60L
Microsemi Corporation

MOSFET N-CH 600V 56A TO-264

Package: TO-264-3, TO-264AA

Stock6,880
DMN3025LFG-13
Diodes Incorporated

MOSFET N-CH 30V 7.5A POWERDI

Package: 8-PowerWDFN

Stock7,572
SSM3K7002BSU,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V .2A USM

Package: SC-70, SOT-323

Stock926,040
FQD13N06LTM
Fairchild/ON Semiconductor

MOSFET N-CH 60V 11A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock227,328
DMN2300UFD-7
Diodes Incorporated

MOSFET N-CH 20V 1.73A 3UDFN

Package: 3-UDFN

Stock4,048
PSMN1R9-40PLQ
Nexperia USA Inc.

MOSFET N-CH 40V 150A SOT78

Package: TO-220-3

Stock30,264
2N7002L
Fairchild/ON Semiconductor

MOSFET N-CH 60V 0.115A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock885,096
SIHA22N60E-E3
Vishay Siliconix

MOSFET N-CH 600V 21A TO-220

Package: TO-220-3 Full Pack

Stock16,080
CSD17573Q5B
Texas Instruments

MOSFET N-CH 30V 100A 8VSON

Package: 8-PowerTDFN

Stock25,764
IRF7470TRPBF
Infineon Technologies

MOSFET N-CH 40V 10A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock8,268
SI4435DDY-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 11.4A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock660,564
NDT02N40T1G
ON Semiconductor

MOSFET N-CH 400V 0.4A SOT223

Package: TO-261-4, TO-261AA

Stock69,588
PMV130ENEAR
Nexperia USA Inc.

MOSFET N-CH 40V SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock27,144
DMP3011SPSW-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V PowerDI506

Package: -

Request a Quote
MRH25N12U3
Microchip Technology

RH MOSFET _ U3

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP048N06L G	Infineon Technologies	MOSFET N-CH 60V 100A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock5,616	MOSFET (Metal Oxide)	60V	100A (Tc)	4.5V, 10V	2V @ 270µA	225nC @ 10V	7600pF @ 30V	±20V	-	300W (Tc)	4.7 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
RJK1053DPB-00#J5	Renesas Electronics America	MOSFET N-CH 100V 25A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock79,608	MOSFET (Metal Oxide)	100V	25A (Ta)	4.5V, 10V	-	43nC @ 4.5V	6160pF @ 10V	±20V	-	65W (Tc)	13 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
BUK9610-55A,118	NXP	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4307pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,032	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	68nC @ 5V	4307pF @ 25V	±15V	-	200W (Tc)	9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPA65R280C6XKSA1	Infineon Technologies	MOSFET N-CH 650V 13.8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,296	MOSFET (Metal Oxide)	650V	13.8A (Tc)	10V	3.5V @ 440µA	45nC @ 10V	950pF @ 100V	±20V	-	32W (Tc)	280 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SPU03N60S5BKMA1	Infineon Technologies	MOSFET N-CH 600V 3.2A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,416	MOSFET (Metal Oxide)	600V	3.2A (Tc)	10V	5.5V @ 135µA	16nC @ 10V	420pF @ 25V	±20V	-	38W (Tc)	1.4 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
APT56M60L	Microsemi Corporation	MOSFET N-CH 600V 56A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,880	MOSFET (Metal Oxide)	600V	60A (Tc)	10V	5V @ 2.5mA	280nC @ 10V	11300pF @ 25V	±30V	-	1040W (Tc)	130 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
DMN3025LFG-13	Diodes Incorporated	MOSFET N-CH 30V 7.5A POWERDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock7,572	MOSFET (Metal Oxide)	30V	7.5A (Ta)	4.5V, 10V	2V @ 250µA	11.6nC @ 10V	605pF @ 15V	±20V	-	2W (Ta)	18 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
SSM3K7002BSU,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 60V .2A USM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: USM Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock926,040	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	3.1V @ 250µA	-	17pF @ 25V	±20V	-	150mW (Ta)	2.1 Ohm @ 500mA, 10V	150°C (TJ)	Surface Mount	USM	SC-70, SOT-323
FQD13N06LTM	Fairchild/ON Semiconductor	MOSFET N-CH 60V 11A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 115 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock227,328	MOSFET (Metal Oxide)	60V	11A (Tc)	5V, 10V	2.5V @ 250µA	6.4nC @ 5V	350pF @ 25V	±20V	-	2.5W (Ta), 28W (Tc)	115 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
DMN2300UFD-7	Diodes Incorporated	MOSFET N-CH 20V 1.73A 3UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 67.62pF @ 25V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 900mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X1-DFN1212-3 Package / Case: 3-UDFN	Package: 3-UDFN	Stock4,048	MOSFET (Metal Oxide)	20V	1.21A (Ta)	1.5V, 4.5V	950mV @ 250µA	2nC @ 4.5V	67.62pF @ 25V	±8V	-	470mW (Ta)	200 mOhm @ 900mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X1-DFN1212-3	3-UDFN
PSMN1R9-40PLQ	Nexperia USA Inc.	MOSFET N-CH 40V 150A SOT78 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock30,264	MOSFET (Metal Oxide)	40V	150A (Tc)	4.5V, 10V	2.1V @ 1mA	120nC @ 5V	13200pF @ 25V	±20V	-	349W (Tc)	1.7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
2N7002L	Fairchild/ON Semiconductor	MOSFET N-CH 60V 0.115A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock885,096	MOSFET (Metal Oxide)	60V	115mA (Ta)	5V, 10V	2.5V @ 250µA	-	50pF @ 25V	±20V	-	200mW (Ta)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SIHA22N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 21A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock16,080	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	4V @ 250µA	86nC @ 10V	1920pF @ 100V	±30V	-	35W (Tc)	180 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
CSD17573Q5B	Texas Instruments	MOSFET N-CH 30V 100A 8VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 195W (Tc) Rds On (Max) @ Id, Vgs: 1 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock25,764	MOSFET (Metal Oxide)	30V	100A (Ta)	4.5V, 10V	1.8V @ 250µA	64nC @ 4.5V	9000pF @ 15V	±20V	-	3.2W (Ta), 195W (Tc)	1 mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
IRF7470TRPBF	Infineon Technologies	MOSFET N-CH 40V 10A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 20V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock8,268	MOSFET (Metal Oxide)	40V	10A (Ta)	2.8V, 10V	2V @ 250µA	44nC @ 4.5V	3430pF @ 20V	±12V	-	2.5W (Ta)	13 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4435DDY-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 11.4A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 9.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock660,564	MOSFET (Metal Oxide)	30V	11.4A (Tc)	4.5V, 10V	3V @ 250µA	50nC @ 10V	1350pF @ 15V	±20V	-	2.5W (Ta), 5W (Tc)	24 mOhm @ 9.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NDT02N40T1G	ON Semiconductor	MOSFET N-CH 400V 0.4A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 220mA, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-223 (TO-261) Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock69,588	MOSFET (Metal Oxide)	400V	400mA (Tc)	10V	2V @ 250µA	5.5nC @ 10V	121pF @ 25V	±20V	-	2W (Tc)	5.5 Ohm @ 220mA, 10V	-	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
PMV130ENEAR	Nexperia USA Inc.	MOSFET N-CH 40V SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 460mW (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock27,144	MOSFET (Metal Oxide)	40V	2.1A (Ta)	4.5V, 10V	2.5V @ 250µA	3.6nC @ 10V	170pF @ 20V	±20V	-	460mW (Ta), 5W (Tc)	120 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
DMP3011SPSW-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V PowerDI506 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	14A (Ta), 65A (Tc)	4.5V, 10V	3V @ 250µA	46 nC @ 10 V	2380 pF @ 15 V	±25V	-	1.8W (Ta)	10mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
MRH25N12U3	Microchip Technology	RH MOSFET _ U3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U3 (SMD-0.5) Package / Case: 3-SMD, No Lead	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	12.4A (Tc)	12V	4V @ 1mA	50 nC @ 12 V	1980 pF @ 25 V	±20V	-	75W (Tc)	210mOhm @ 7.5A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	U3 (SMD-0.5)	3-SMD, No Lead
SPW16N50C3FKSA1	Infineon Technologies	MOSFET N-CH 560V 16A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	Package: -	Stock558	MOSFET (Metal Oxide)	560 V	16A (Tc)	10V	3.9V @ 675µA	66 nC @ 10 V	1600 pF @ 25 V	±20V	-	160W (Tc)	280mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
BSC030N10NS5SCATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 115µA Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-WSON-8-2 Package / Case: 8-PowerWDFN	Package: -	Stock123	MOSFET (Metal Oxide)	100 V	171A (Tc)	6V, 10V	3.8V @ 115µA	88 nC @ 10 V	6500 pF @ 50 V	±20V	-	188W (Tc)	3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-WSON-8-2	8-PowerWDFN
IPDQ65R099CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 480µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 186W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	29A (Tc)	10V	4.5V @ 480µA	39 nC @ 10 V	1942 pF @ 400 V	±20V	-	186W (Tc)	99mOhm @ 9.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
NP22N055SLE-E1-AZ	Renesas Electronics Corporation	TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 22A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	22A (Tj)	-	-	-	-	-	-	-	-	-	-	-	-
MCH3307-TL-E	onsemi	MOSFET P-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AONS66908	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 158A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.3W (Ta), 208W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: -	Stock9,000	MOSFET (Metal Oxide)	100 V	30A (Ta), 158A (Tc)	4.5V, 10V	2.6V @ 250µA	97 nC @ 10 V	5117 pF @ 50 V	±20V	-	7.3W (Ta), 208W (Tc)	4.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
NVMFS4C310NT1G	onsemi	MOSFET N-CH 30V 17A/51A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 32W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	17A (Ta), 51A (Tc)	4.5V, 10V	2.2V @ 250µA	18.6 nC @ 10 V	1000 pF @ 15 V	±20V	-	3.5W (Ta), 32W (Tc)	6mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
PSMN015N10NS2_R2_00201	Panjit International Inc.	100V/ 1.5M / TOLL FOR ESS/ BBU/ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 395A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TOLL Package / Case: 8-PowerSFN	Package: -	Stock5,922	MOSFET (Metal Oxide)	100 V	395A	4.5V, 10V	-	128 nC @ 10 V	-	±20V	-	-	-	-	Surface Mount	TOLL	8-PowerSFN