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Infineon Technologies |
MOSFET N-CH 30V 24A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 136A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3970pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 24A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MX
- Package / Case: DirectFET? Isometric MX
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Package: DirectFET? Isometric MX |
Stock7,008 |
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MOSFET (Metal Oxide) | 30V | 24A (Ta), 136A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 45nC @ 4.5V | 3970pF @ 15V | ±20V | - | 2.8W (Ta), 89W (Tc) | 3.3 mOhm @ 24A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
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IXYS |
MOSFET N-CH ISOPLUS247
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock2,384 |
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ON Semiconductor |
MOSFET N-CH 650V 15A TO-3PB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 45.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 720 mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PB
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock5,840 |
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MOSFET (Metal Oxide) | 650V | 15A (Ta) | 10V | - | 45.4nC @ 10V | 1200pF @ 30V | ±30V | - | 2.5W (Ta), 170W (Tc) | 720 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-3PB | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 60V 45A TO-220ML
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 23A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220ML
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock390,000 |
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MOSFET (Metal Oxide) | 60V | 45A (Ta) | 4V, 10V | - | 67nC @ 10V | 3500pF @ 20V | ±20V | - | 2W (Ta), 30W (Tc) | 14 mOhm @ 23A, 10V | 150°C (TJ) | Through Hole | TO-220ML | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 500V 12A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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Package: ISOPLUS220? |
Stock2,912 |
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MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 4V @ 2.5mA | 120nC @ 10V | 2800pF @ 25V | ±20V | - | 140W (Tc) | 400 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
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ON Semiconductor |
MOSFET N-CH 25V 7.6A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,408 |
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MOSFET (Metal Oxide) | 25V | 65A (Tc) | 4.5V, 10V | 2V @ 250µA | 9.5nC @ 4.5V | 1330pF @ 20V | ±20V | - | 1.04W (Ta), 62.5W (Tc) | 8.2 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET P-CH 200V 0.12A TO92-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 25 Ohm @ 150mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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Package: E-Line-3 |
Stock7,184 |
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MOSFET (Metal Oxide) | 200V | 120mA (Ta) | 10V | 3.5V @ 1mA | - | 100pF @ 25V | ±20V | - | 700mW (Ta) | 25 Ohm @ 150mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Infineon Technologies |
MOSFET N-CH TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7180pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 40.7 mOhm @ 44A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,520 |
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MOSFET (Metal Oxide) | 300V | 44A (Tc) | 10V | 4V @ 270µA | 87nC @ 10V | 7180pF @ 100V | ±20V | - | 300W (Tc) | 40.7 mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 70A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,352 |
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MOSFET (Metal Oxide) | 100V | 70A (Tc) | 4.5V, 10V | 2V @ 2mA | 240nC @ 10V | 4540pF @ 25V | ±20V | - | 250W (Tc) | 16 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 8TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-23
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock6,720 |
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MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.2V @ 30µA | 43nC @ 10V | 3600pF @ 25V | ±16V | - | 63W (Tc) | 5.6 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-23 | 8-PowerVDFN |
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IXYS |
MOSFET N-CH 500V 44A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock4,080 |
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MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 6.5V @ 4mA | 93nC @ 10V | 4800pF @ 25V | ±30V | - | 830W (Tc) | 140 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 40V 110A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 68W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock5,408 |
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MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 2V @ 250µA | 35nC @ 10V | 2100pF @ 20V | ±20V | - | 3.7W (Ta), 68W (Tc) | 2.8 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 40V 40A 1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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Package: PowerPAK? 1212-8 |
Stock3,920 |
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MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 32nC @ 10V | 1330pF @ 20V | ±20V | - | 3.7W (Ta), 52W (Tc) | 5.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock390,000 |
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MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 270 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 450V 140MA SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450V
- Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 50 Ohm @ 100mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock452,700 |
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MOSFET (Metal Oxide) | 450V | 140mA (Ta) | 10V | 3V @ 1mA | - | 70pF @ 25V | ±20V | - | 2W (Ta) | 50 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 30V 700MA SC59-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 400mA, 10V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-59-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock463,740 |
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MOSFET (Metal Oxide) | 30V | 700mA (Ta) | 4.5V, 10V | 3V @ 1mA | - | 160pF @ 10V | ±20V | - | 500mW (Ta) | 250 mOhm @ 400mA, 10V | -65°C ~ 150°C (TJ) | Surface Mount | SC-59-3 | TO-236-3, SC-59, SOT-23-3 |
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Rectron USA |
MOSFET P-CHANNEL 30V 4.3A SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 4.3A (Ta) | 4.5V, 10V | 3V @ 250µA | - | 700 pF @ 15 V | ±20V | - | 1.5W (Ta) | 52mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 100A TO252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock5,703 |
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MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 3.5V @ 250µA | 90 nC @ 10 V | 6600 pF @ 25 V | ±20V | - | 107W (Tc) | 3.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
60V, 28A, SINGLE N-CHANNEL POWER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (3.15x3.1)
- Package / Case: 8-PowerWDFN
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Package: - |
Stock29,940 |
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MOSFET (Metal Oxide) | 60 V | 6A (Ta), 28A (Tc) | 7V, 10V | 4V @ 250µA | 23 nC @ 10 V | 1440 pF @ 30 V | ±20V | - | 1.9W (Ta), 42W (Tc) | 25mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3.15x3.1) | 8-PowerWDFN |
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Renesas Electronics Corporation |
MOSFET N-CH 100V 80A TO220FPA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Ta)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220ABA
- Package / Case: TO-220-3
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Package: - |
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MOSFET (Metal Oxide) | 100 V | 80A (Ta) | 10V | 4V @ 1mA | 147 nC @ 10 V | 10000 pF @ 10 V | ±20V | - | 30W (Ta) | 5.5mOhm @ 40A, 10V | 150°C | Through Hole | TO-220ABA | TO-220-3 |
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onsemi |
MOSFET P-CH 60V 20A TO220ML
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 20 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220ML
- Package / Case: TO-220-3 Full Pack
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 20A (Ta) | - | - | 45 nC @ 10 V | 2200 pF @ 20 V | - | - | 2W (Ta), 25W (Tc) | 60mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-220ML | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 4.5A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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MOSFET (Metal Oxide) | 650 V | 4.5A (Tc) | 10V | 3.9V @ 200µA | 25 nC @ 10 V | 490 pF @ 25 V | ±20V | - | 50W (Tc) | 950mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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onsemi |
MOSFET N-CH 600V 900MA DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
- Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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MOSFET (Metal Oxide) | 600 V | 900mA (Tc) | 10V | 4V @ 250µA | 7.7 nC @ 10 V | 215 pF @ 25 V | ±30V | - | 2.5W (Ta), 28W (Tc) | 12Ohm @ 450mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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onsemi |
SINGLE N-CHANNEL POWER MOSFET 12
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 60 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 102W (Tc)
- Rds On (Max) @ Id, Vgs: 8mOhm @ 36A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
Stock2,100 |
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MOSFET (Metal Oxide) | 120 V | 12A (Ta), 79A (Tc) | 6V, 10V | 4V @ 200µA | 33 nC @ 10 V | 2705 pF @ 60 V | ±20V | - | 2.7W (Ta), 102W (Tc) | 8mOhm @ 36A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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onsemi |
MOSFET N-CH 650V 6A TO220F-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 24W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3
- Package / Case: TO-220-3 Full Pack
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MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 4.5V @ 600µA | 11 nC @ 10 V | 465 pF @ 400 V | ±30V | - | 24W (Tc) | 600mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.8V @ 273µA
- Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: - |
Stock1,380 |
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MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 3.8V @ 273µA | 206 nC @ 10 V | 14400 pF @ 37.5 V | ±20V | - | 300W (Tc) | 2.3mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 60A TO220-3-31
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 58µA
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-31
- Package / Case: TO-220-3 Full Pack
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MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 4V @ 58µA | 82 nC @ 10 V | 6600 pF @ 30 V | ±20V | - | 38W (Tc) | 5.7mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-31 | TO-220-3 Full Pack |
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onsemi |
T6 40V LL PQFN8*8 EXPANSI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 78.9A (Ta), 554.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 16013 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 245W (Tc)
- Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 78.9A (Ta), 554.5A (Tc) | 4.5V, 10V | 2V @ 250µA | 265 nC @ 10 V | 16013 pF @ 20 V | ±20V | - | 5W (Ta), 245W (Tc) | 0.42mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | - | - | - |