Page 825 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFC4020D
Infineon Technologies

MOSFET N-CH WAFER

Package: -

Stock6,608
NVD4815NT4G
ON Semiconductor

MOSFET N-CH 30V 6.9A DPAK-4

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock120,360
SI5475DC-T1-E3
Vishay Siliconix

MOSFET P-CH 12V 5.5A 1206-8

Package: 8-SMD, Flat Lead

Stock1,336,008
2SJ656
ON Semiconductor

MOSFET P-CH 100V 18A TO-220ML

Package: TO-220-3 Full Pack

Stock425,472
SI4840DY-T1-E3
Vishay Siliconix

MOSFET N-CH 40V 10A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,786,848
SI4346DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 5.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock20,040
NVMS5P02R2G
ON Semiconductor

MOSFET P-CH 20V 5.4A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,048
AON6576
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

Package: 8-PowerSMD, Flat Leads

Stock22,560
DMP4065S-13
Diodes Incorporated

MOSFET P-CH 40V 3.4A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock5,296
TSM70N900CI C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-220-3 Full Pack, Isolated Tab

Stock4,976
STD3NK50Z-1
STMicroelectronics

MOSFET N-CH 500V 2.3A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock926,184
STB75NF75T4
STMicroelectronics

MOSFET N-CH 75V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock1,290,240
FCD3400N80Z
Fairchild/ON Semiconductor

MOSFET N-CH 800V 2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,312
FCH043N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 75A TO247

Package: TO-247-3

Stock392,724
IRF3205LPBF
Infineon Technologies

MOSFET N-CH 55V 110A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock16,722
IMBF170R450M1XTMA1
Infineon Technologies

SICFET N-CH 1700V 9.8A TO263-7

Package: -

Stock4,575
BSS84W-G
Comchip Technology

MOSFET P-CH 50V 0.13A SOT323

Package: -

Request a Quote
TJ15S06M3L-LXHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 15A DPAK

Package: -

Stock1,962
FDPF18N20FT-G
Fairchild Semiconductor

MOSFET N-CH 200V 18A TO220F

Package: -

Request a Quote
SIHP22N60AEL-GE3
Vishay Siliconix

MOSFET N-CH 600V 21A TO220AB

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFC4020D	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,608	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVD4815NT4G	ON Semiconductor	MOSFET N-CH 30V 6.9A DPAK-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,360	MOSFET (Metal Oxide)	30V	6.9A (Ta), 35A (Tc)	4.5V, 11.5V	2.5V @ 250µA	6.6nC @ 4.5V	770pF @ 12V	±20V	-	1.26W (Ta), 32.6W (Tc)	15 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
SI5475DC-T1-E3	Vishay Siliconix	MOSFET P-CH 12V 5.5A 1206-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 450mV @ 1mA (Min) Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 31 mOhm @ 5.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock1,336,008	MOSFET (Metal Oxide)	12V	5.5A (Ta)	1.8V, 4.5V	450mV @ 1mA (Min)	29nC @ 4.5V	-	±8V	-	1.3W (Ta)	31 mOhm @ 5.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
2SJ656	ON Semiconductor	MOSFET P-CH 100V 18A TO-220ML FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 75.5 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220ML Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock425,472	MOSFET (Metal Oxide)	100V	18A (Ta)	4V, 10V	-	74nC @ 10V	4200pF @ 20V	±20V	-	2W (Ta), 30W (Tc)	75.5 mOhm @ 9A, 10V	150°C (TJ)	Through Hole	TO-220ML	TO-220-3 Full Pack
SI4840DY-T1-E3	Vishay Siliconix	MOSFET N-CH 40V 10A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,786,848	MOSFET (Metal Oxide)	40V	10A (Ta)	4.5V, 10V	3V @ 250µA	28nC @ 5V	-	±20V	-	1.56W (Ta)	9 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4346DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 5.9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.31W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock20,040	MOSFET (Metal Oxide)	30V	5.9A (Ta)	2.5V, 10V	2V @ 250µA	10nC @ 4.5V	-	±12V	-	1.31W (Ta)	23 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NVMS5P02R2G	ON Semiconductor	MOSFET P-CH 20V 5.4A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 16V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,048	MOSFET (Metal Oxide)	20V	3.95A (Ta)	-	1.25V @ 250µA	35nC @ 4.5V	1900pF @ 16V	-	-	-	33 mOhm @ 5.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
AON6576	Alpha & Omega Semiconductor Inc.	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock22,560	MOSFET (Metal Oxide)	30V	26A (Ta), 32A (Tc)	4.5V, 10V	2.2V @ 250µA	27nC @ 10V	1320pF @ 15V	±20V	-	5W (Ta), 26W (Tc)	4.7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
DMP4065S-13	Diodes Incorporated	MOSFET P-CH 40V 3.4A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 720mW (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,296	MOSFET (Metal Oxide)	40V	2.4A (Ta)	4.5V, 10V	3V @ 250µA	12.2nC @ 10V	587pF @ 20V	±20V	-	720mW (Ta)	80 mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
TSM70N900CI C0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 482pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock4,976	MOSFET (Metal Oxide)	700V	4.5A (Tc)	10V	4V @ 250µA	9.7nC @ 10V	482pF @ 100V	±30V	-	50W (Tc)	900 mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220	TO-220-3 Full Pack, Isolated Tab
STD3NK50Z-1	STMicroelectronics	MOSFET N-CH 500V 2.3A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock926,184	MOSFET (Metal Oxide)	500V	2.3A (Tc)	10V	4.5V @ 50µA	15nC @ 10V	280pF @ 25V	±30V	-	45W (Tc)	3.3 Ohm @ 1.15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STB75NF75T4	STMicroelectronics	MOSFET N-CH 75V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock1,290,240	MOSFET (Metal Oxide)	75V	80A (Tc)	10V	4V @ 250µA	160nC @ 10V	3700pF @ 25V	±20V	-	300W (Tc)	11 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCD3400N80Z	Fairchild/ON Semiconductor	MOSFET N-CH 800V 2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,312	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	4.5V @ 200µA	9.6nC @ 10V	400pF @ 100V	±20V	-	32W (Tc)	3.4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FCH043N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 75A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12225pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 592W (Tc) Rds On (Max) @ Id, Vgs: 43 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock392,724	MOSFET (Metal Oxide)	600V	75A (Tc)	10V	3.5V @ 250µA	215nC @ 10V	12225pF @ 400V	±20V	-	592W (Tc)	43 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IRF3205LPBF	Infineon Technologies	MOSFET N-CH 55V 110A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3247pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock16,722	MOSFET (Metal Oxide)	55V	110A (Tc)	10V	4V @ 250µA	146nC @ 10V	3247pF @ 25V	±20V	-	200W (Tc)	8 mOhm @ 62A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IMBF170R450M1XTMA1	Infineon Technologies	SICFET N-CH 1700V 9.8A TO263-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs(th) (Max) @ Id: 5.7V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V Vgs (Max): +20V, -10V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-13 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock4,575	SiCFET (Silicon Carbide)	1700 V	9.8A (Tc)	12V, 15V	5.7V @ 2.5mA	11 nC @ 12 V	610 pF @ 1000 V	+20V, -10V	-	107W (Tc)	450mOhm @ 2A, 15V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-13	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
BSS84W-G	Comchip Technology	MOSFET P-CH 50V 0.13A SOT323 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	130mA (Ta)	5V	2V @ 1mA	-	45 pF @ 25 V	±20V	-	200mW (Ta)	10Ohm @ 100mA, 5V	150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
TJ15S06M3L-LXHQ	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 15A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 7.5A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock1,962	MOSFET (Metal Oxide)	60 V	15A (Ta)	6V, 10V	3V @ 1mA	36 nC @ 10 V	1770 pF @ 10 V	+10V, -20V	-	41W (Tc)	50mOhm @ 7.5A, 10V	175°C	Surface Mount	DPAK+	TO-252-3, DPAK (2 Leads + Tab), SC-63
FDPF18N20FT-G	Fairchild Semiconductor	MOSFET N-CH 200V 18A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	5V @ 250µA	26 nC @ 10 V	1180 pF @ 25 V	±30V	-	35W (Tc)	140mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
SIHP22N60AEL-GE3	Vishay Siliconix	MOSFET N-CH 600V 21A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	4V @ 250µA	82 nC @ 10 V	1757 pF @ 100 V	±30V	-	208W (Tc)	180mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDD8896-G	onsemi	MOSFET N-CH 30V TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	17A (Ta), 94A (Tc)	4.5V, 10V	2.5V @ 250µA	60 nC @ 10 V	2525 pF @ 15 V	±20V	-	80W (Tc)	5.7mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMTH83M2SPSW-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI50 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 165A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5466 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.1W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	165A (Tc)	6V, 10V	4V @ 250µA	87 nC @ 10 V	5466 pF @ 40 V	±20V	-	4.1W (Ta), 150W (Tc)	2.9mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
APT50M38JFLL	Microchip Technology	MOSFET N-CH 500V 88A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 38mOhm @ 44A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	88A (Tc)	-	5V @ 5mA	270 nC @ 10 V	12000 pF @ 25 V	-	-	-	38mOhm @ 44A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
RFP8N20	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	8A (Tc)	10V	4V @ 1mA	-	750 pF @ 25 V	±20V	-	60W (Tc)	500mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDD9411-F085	onsemi	MOSFET N-CH 40V 15A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48.4W (Tj) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	15A (Tc)	10V	4V @ 250µA	22.5 nC @ 10 V	1080 pF @ 25 V	±20V	-	48.4W (Tj)	7.8mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMTH6010LPSWQ-13	Diodes Incorporated	MOSFET N-CH 60V 15.5A/80A PWRDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 (Type Q) Package / Case: 8-PowerTDFN	Package: -	Stock7,500	MOSFET (Metal Oxide)	60 V	15.5A (Ta), 80A (Tc)	4.5V, 10V	3V @ 250µA	41.3 nC @ 10 V	2090 pF @ 30 V	±20V	-	2.9W (Ta), 75W (Tc)	8mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8 (Type Q)	8-PowerTDFN
2SK3116-1-ZK-E2-AZ	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IMT65R083M1HXUMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: -	Stock5,895	SiCFET (Silicon Carbide)	650 V	-	18V	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-1	8-PowerSFN