Page 828 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSS119 E6433
Infineon Technologies

MOSFET N-CH 100V 170MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,704
BUK9E6R1-100E,127
NXP

MOSFET N-CH 100V 120A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,928
FQB10N20TM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock203,220
IPD60N10S412ATMA1
Infineon Technologies

MOSFET N-CH TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,520
IPA60R1K0CEXKSA1
Infineon Technologies

MOSFET N-CH 600V TO220-3

Package: TO-220-3 Full Pack

Stock3,872
IXTT26N60P
IXYS

MOSFET N-CH 600V 26A TO-268 D3

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4,368
IXTP44P15T
IXYS

MOSFET P-CH 150V 44A TO-220

Package: TO-220-3

Stock3,808
TK2P60D(TE16L1,NQ)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 2A PW-MOLD

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,160
PMV65UNER
Nexperia USA Inc.

MOSFET N-CH 20V TO-236AB

Package: TO-236-3, SC-59, SOT-23-3

Stock4,864
AUIRLL2705TR
Infineon Technologies

MOSFET N-CH 55V 5.2A SOT223

Package: TO-261-4, TO-261AA

Stock3,232
IRFHM830TRPBF
Infineon Technologies

MOSFET N-CH 30V 21A PQFN

Package: 8-VQFN Exposed Pad

Stock24,384
FDPF7N60NZ
Fairchild/ON Semiconductor

MOSFET N-CH 600V 6.5A TO-220F

Package: TO-220-3 Full Pack

Stock11,856
FDD850N10LD
Fairchild/ON Semiconductor

MOSFET N-CH 100V 15.3A DPAK

Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD

Stock426,144
STF7N60M2
STMicroelectronics

MOSFET N-CH 600V TO-220FP

Package: TO-220-3 Full Pack

Stock27,174
STU1HN60K3
STMicroelectronics

MOSFET N-CH 600V 1.2A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock19,962
IPB065N03L G
Infineon Technologies

MOSFET N-CH 30V 50A TO-263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock762,000
IRFP4468PBF
Infineon Technologies

MOSFET N-CH 100V 195A TO-247AC

Package: TO-247-3

Stock65,604
IST007N04NM6AUMA1
Infineon Technologies

MOSFET N-CH 40V 54A/440A HSOF-5

Package: -

Stock4,275
SQJ403BEEP-T1_BE3
Vishay Siliconix

P-CHANNEL 30-V (D-S) 175C MOSFET

Package: -

Stock8,895
DMN67D8LT-7
Diodes Incorporated

MOSFET BVDSS: 41V 60V SOT523 T&R

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSS119 E6433	Infineon Technologies	MOSFET N-CH 100V 170MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,704	MOSFET (Metal Oxide)	100V	170mA (Ta)	4.5V, 10V	2.3V @ 50µA	2.5nC @ 10V	78pF @ 25V	±20V	-	360mW (Ta)	6 Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
BUK9E6R1-100E,127	NXP	MOSFET N-CH 100V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 133nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 17460pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,928	MOSFET (Metal Oxide)	100V	120A (Tc)	5V, 10V	2.1V @ 1mA	133nC @ 5V	17460pF @ 25V	±10V	-	349W (Tc)	5.9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
FQB10N20TM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 360 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock203,220	MOSFET (Metal Oxide)	200V	10A (Tc)	10V	5V @ 250µA	18nC @ 10V	670pF @ 25V	±30V	-	-	360 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD60N10S412ATMA1	Infineon Technologies	MOSFET N-CH TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 46µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2470pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,520	MOSFET (Metal Oxide)	100V	60A (Tc)	10V	3.5V @ 46µA	34nC @ 10V	2470pF @ 25V	±20V	-	94W (Tc)	12.2 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPak (2 Leads + Tab), SC-63
IPA60R1K0CEXKSA1	Infineon Technologies	MOSFET N-CH 600V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,872	MOSFET (Metal Oxide)	600V	6.8A (Tc)	10V	3.5V @ 130µA	13nC @ 10V	280pF @ 100V	±20V	Super Junction	26W (Tc)	1 Ohm @ 1.5A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IXTT26N60P	IXYS	MOSFET N-CH 600V 26A TO-268 D3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4,368	MOSFET (Metal Oxide)	600V	26A (Tc)	10V	5V @ 250µA	72nC @ 10V	4150pF @ 25V	±30V	-	460W (Tc)	270 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTP44P15T	IXYS	MOSFET P-CH 150V 44A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,808	MOSFET (Metal Oxide)	150V	44A (Tc)	10V	4V @ 250µA	175nC @ 10V	13400pF @ 25V	±15V	-	298W (Tc)	65 mOhm @ 500mA, 10V	-	Through Hole	TO-220AB	TO-220-3
TK2P60D(TE16L1,NQ)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 2A PW-MOLD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PW-MOLD Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,160	MOSFET (Metal Oxide)	600V	2A (Ta)	10V	4.4V @ 1mA	7nC @ 10V	280pF @ 25V	±30V	-	60W (Tc)	4.3 Ohm @ 1A, 10V	150°C (TJ)	Surface Mount	PW-MOLD	TO-252-3, DPak (2 Leads + Tab), SC-63
PMV65UNER	Nexperia USA Inc.	MOSFET N-CH 20V TO-236AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 291pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 490mW (Ta) Rds On (Max) @ Id, Vgs: 73 mOhm @ 2.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,864	MOSFET (Metal Oxide)	20V	2.8A (Ta)	1.8V, 4.5V	1V @ 250µA	6nC @ 10V	291pF @ 10V	±8V	-	490mW (Ta)	73 mOhm @ 2.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
AUIRLL2705TR	Infineon Technologies	MOSFET N-CH 55V 5.2A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock3,232	MOSFET (Metal Oxide)	55V	5.2A (Ta)	4V, 10V	2V @ 250µA	48nC @ 10V	870pF @ 25V	±16V	-	1W (Ta)	40 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
IRFHM830TRPBF	Infineon Technologies	MOSFET N-CH 30V 21A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2155pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (3x3) Package / Case: 8-VQFN Exposed Pad	Package: 8-VQFN Exposed Pad	Stock24,384	MOSFET (Metal Oxide)	30V	21A (Ta), 40A (Tc)	4.5V, 10V	2.35V @ 50µA	31nC @ 10V	2155pF @ 25V	±20V	-	2.7W (Ta), 37W (Tc)	3.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (3x3)	8-VQFN Exposed Pad
FDPF7N60NZ	Fairchild/ON Semiconductor	MOSFET N-CH 600V 6.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock11,856	MOSFET (Metal Oxide)	600V	6.5A (Tc)	10V	5V @ 250µA	17nC @ 10V	730pF @ 25V	±30V	-	33W (Tc)	1.25 Ohm @ 3.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDD850N10LD	Fairchild/ON Semiconductor	MOSFET N-CH 100V 15.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-5 Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Stock426,144	MOSFET (Metal Oxide)	100V	15.3A (Tc)	5V, 10V	2.5V @ 250µA	28.9nC @ 10V	1465pF @ 25V	±20V	-	42W (Tc)	75 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5	TO-252-5, DPak (4 Leads + Tab), TO-252AD
STF7N60M2	STMicroelectronics	MOSFET N-CH 600V TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock27,174	MOSFET (Metal Oxide)	600V	5A (Tc)	10V	4V @ 250µA	8.8nC @ 10V	271pF @ 100V	±25V	-	20W (Tc)	950 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STU1HN60K3	STMicroelectronics	MOSFET N-CH 600V 1.2A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 8 Ohm @ 600mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock19,962	MOSFET (Metal Oxide)	600V	1.2A (Tc)	10V	4.5V @ 50µA	9.5nC @ 10V	140pF @ 50V	±30V	-	27W (Tc)	8 Ohm @ 600mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IPB065N03L G	Infineon Technologies	MOSFET N-CH 30V 50A TO-263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock762,000	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.2V @ 250µA	23nC @ 10V	2400pF @ 15V	±20V	-	56W (Tc)	6.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFP4468PBF	Infineon Technologies	MOSFET N-CH 100V 195A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19860pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 180A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock65,604	MOSFET (Metal Oxide)	100V	195A (Tc)	10V	4V @ 250µA	540nC @ 10V	19860pF @ 50V	±20V	-	520W (Tc)	2.6 mOhm @ 180A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IST007N04NM6AUMA1	Infineon Technologies	MOSFET N-CH 40V 54A/440A HSOF-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 440A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-1 Package / Case: 5-PowerSFN	Package: -	Stock4,275	MOSFET (Metal Oxide)	40 V	54A (Ta), 440A (Tc)	6V, 10V	3.3V @ 250µA	152 nC @ 10 V	7900 pF @ 20 V	±20V	-	3.8W (Ta), 250W (Tc)	0.7mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-1	5-PowerSFN
SQJ403BEEP-T1_BE3	Vishay Siliconix	P-CHANNEL 30-V (D-S) 175C MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock8,895	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	164 nC @ 10 V	-	±20V	-	68W (Tc)	8.5mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
DMN67D8LT-7	Diodes Incorporated	MOSFET BVDSS: 41V 60V SOT523 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 821 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 260mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	210mA (Ta)	5V, 10V	2.5V @ 250µA	821 nC @ 10 V	22 pF @ 25 V	±20V	-	260mW (Ta)	5Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
NVMFS5C404NWFT1G-M	onsemi	MOSFET N-CH 40V 53A/378A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	53A (Ta), 378A (Tc)	10V	4V @ 250µA	128 nC @ 10 V	8400 pF @ 25 V	±20V	-	3.9W (Ta), 200W (Tc)	0.7mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
AOD66620	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	20A (Ta), 58A (Tc)	8V, 10V	3.6V @ 250µA	25 nC @ 10 V	1070 pF @ 30 V	±20V	-	6.2W (Ta), 52W (Tc)	8.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
RJ1L12CGNTLL	Rohm Semiconductor	NCH 60V 120A POWER MOSFET: RJ1L1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock3,000	MOSFET (Metal Oxide)	60 V	120A (Tc)	4.5V, 10V	2.5V @ 200µA	139 nC @ 10 V	7100 pF @ 30 V	±20V	-	166W (Tc)	3.4mOhm @ 50A, 10V	150°C (TJ)	Surface Mount	TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPTC011N08NM5ATMA1	Infineon Technologies	OPTIMOS 5 POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-16-2 Package / Case: 16-PowerSOP Module	Package: -	Stock7,962	MOSFET (Metal Oxide)	80 V	42A (Ta), 408A (Tc)	6V, 10V	3.8V @ 280µA	223 nC @ 10 V	17000 pF @ 40 V	±20V	-	3.8W (Ta), 375W (Tc)	1.1mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HDSOP-16-2	16-PowerSOP Module
GSFH10120	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 180.00A, 1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock2,826	MOSFET (Metal Oxide)	100 V	180A (Tc)	10V	3.9V @ 250µA	152 nC @ 10 V	8402 pF @ 50 V	±20V	-	208W (Tc)	4.4mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IPD06P005NATMA1	Infineon Technologies	MOSFET P-CH 60V 6.5A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	6.5A (Tc)	10V	4V @ 270µA	10.6 nC @ 10 V	420 pF @ 30 V	±20V	-	28W (Tc)	250mOhm @ 6.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJP2NA1K_T0_00001	Panjit International Inc.	1000V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	2A (Ta)	10V	4V @ 250µA	14 nC @ 10 V	385 pF @ 25 V	±30V	-	80W (Tc)	9Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
APT10050B2VFRG	Microchip Technology	MOSFET N-CH 1000V 21A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	21A (Tc)	-	4V @ 2.5mA	500 nC @ 10 V	7900 pF @ 25 V	-	-	-	500mOhm @ 500mA, 10V	-	Through Hole	T-MAX™ [B2]	TO-247-3 Variant