Page 831 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSS139L6327HTSA1
Infineon Technologies

MOSFET N-CH 250V 100MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,528
IRFR2605
Infineon Technologies

MOSFET N-CH 55V 19A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,704
IRF7321D2TR
Infineon Technologies

MOSFET P-CH 30V 4.7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,016
FDPF15N65YDTU
Fairchild/ON Semiconductor

MOSFET N-CH 650V 15A TO-220F

Package: TO-220-3 Full Pack, Formed Leads

Stock4,336
2SK2995(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 250V 30A TO-3PN

Package: TO-3P-3, SC-65-3

Stock5,440
IXFN150N15
IXYS

MOSFET N-CH 150V 150A SOT-227

Package: SOT-227-4, miniBLOC

Stock3,376
HUFA76633P3
Fairchild/ON Semiconductor

MOSFET N-CH 100V 38A TO-220AB

Package: TO-220-3

Stock6,896
IRFB17N60KPBF
Vishay Siliconix

MOSFET N-CH 600V 17A TO-220AB

Package: TO-220-3

Stock6,848
IPW65R190E6FKSA1
Infineon Technologies

MOSFET N-CH 650V 20.2A TO247

Package: TO-247-3

Stock2,128
IPI100N12S305AKSA1
Infineon Technologies

MOSFET N-CHANNEL_100+

Package: -

Stock6,320
AUIRF1324S-7P
Infineon Technologies

MOSFET N-CH 24V 240A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock4,752
IPI65R190C6XKSA1
Infineon Technologies

MOSFET N-CH 650V 20.2A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,160
C2M1000170J-TR
Cree/Wolfspeed

MOSFET N-CH 1700V 5.3A TO247

Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Stock7,968
PSMN8R5-100PSFQ
Nexperia USA Inc.

MOSFET N-CH 100V 98A TO220AB

Package: TO-220-3

Stock5,952
RSD175N10TL
Rohm Semiconductor

MOSFET N-CH 100V 17.5A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock30,984
STP12N50M2
STMicroelectronics

MOSFET N-CH 500V 10A TO-220AB

Package: TO-220-3

Stock7,176
FCP220N80
Fairchild/ON Semiconductor

MOSFET N-CH 800V 23A

Package: TO-220-3

Stock19,584
FDD120AN15A0_F085
Fairchild/ON Semiconductor

MOSFET N-CH 150V 14A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,544
STI6N62K3
STMicroelectronics

MOSFET N-CH 620V 5.5A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock15,732
AON6240
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 27A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock203,028

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSS139L6327HTSA1	Infineon Technologies	MOSFET N-CH 250V 100MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1V @ 56µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,528	MOSFET (Metal Oxide)	250V	100mA (Ta)	0V, 10V	1V @ 56µA	3.5nC @ 5V	76pF @ 25V	±20V	Depletion Mode	360mW (Ta)	14 Ohm @ 0.1mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
IRFR2605	Infineon Technologies	MOSFET N-CH 55V 19A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 11A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,704	MOSFET (Metal Oxide)	55V	19A (Tc)	10V	4V @ 250µA	23nC @ 10V	420pF @ 25V	±20V	-	50W (Tc)	85 mOhm @ 11A, 10V	-	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7321D2TR	Infineon Technologies	MOSFET P-CH 30V 4.7A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,016	MOSFET (Metal Oxide)	30V	4.7A (Ta)	4.5V, 10V	1V @ 250µA	34nC @ 10V	710pF @ 25V	±20V	Schottky Diode (Isolated)	2W (Ta)	62 mOhm @ 4.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDPF15N65YDTU	Fairchild/ON Semiconductor	MOSFET N-CH 650V 15A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3095pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38.5W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 (Y-Forming) Package / Case: TO-220-3 Full Pack, Formed Leads	Package: TO-220-3 Full Pack, Formed Leads	Stock4,336	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	5V @ 250µA	63nC @ 10V	3095pF @ 25V	±30V	-	38.5W (Tc)	440 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3 (Y-Forming)	TO-220-3 Full Pack, Formed Leads
2SK2995(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 250V 30A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N)IS Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,440	MOSFET (Metal Oxide)	250V	30A (Ta)	10V	3.5V @ 1mA	132nC @ 10V	5400pF @ 10V	±20V	-	90W (Tc)	68 mOhm @ 15A, 10V	150°C (TJ)	Through Hole	TO-3P(N)IS	TO-3P-3, SC-65-3
IXFN150N15	IXYS	MOSFET N-CH 150V 150A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 150A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,376	MOSFET (Metal Oxide)	150V	150A	10V	4V @ 8mA	360nC @ 10V	9100pF @ 25V	±20V	-	600W (Tc)	12.5 mOhm @ 75A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
HUFA76633P3	Fairchild/ON Semiconductor	MOSFET N-CH 100V 38A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 39A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,896	MOSFET (Metal Oxide)	100V	39A (Tc)	4.5V, 10V	3V @ 250µA	67nC @ 10V	1820pF @ 25V	±16V	-	145W (Tc)	35 mOhm @ 39A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFB17N60KPBF	Vishay Siliconix	MOSFET N-CH 600V 17A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 340W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,848	MOSFET (Metal Oxide)	600V	17A (Tc)	10V	5V @ 250µA	99nC @ 10V	2700pF @ 25V	±30V	-	340W (Tc)	420 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPW65R190E6FKSA1	Infineon Technologies	MOSFET N-CH 650V 20.2A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock2,128	MOSFET (Metal Oxide)	650V	20.2A (Tc)	10V	3.5V @ 730µA	73nC @ 10V	1620pF @ 100V	±20V	-	151W (Tc)	190 mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPI100N12S305AKSA1	Infineon Technologies	MOSFET N-CHANNEL_100+ FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,320	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRF1324S-7P	Infineon Technologies	MOSFET N-CH 24V 240A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 252nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 19V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1 mOhm @ 160A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock4,752	MOSFET (Metal Oxide)	24V	240A (Tc)	-	4V @ 250µA	252nC @ 10V	7700pF @ 19V	-	-	-	1 mOhm @ 160A, 10V	-	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab)
IPI65R190C6XKSA1	Infineon Technologies	MOSFET N-CH 650V 20.2A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,160	MOSFET (Metal Oxide)	650V	20.2A (Tc)	10V	3.5V @ 730µA	73nC @ 10V	1620pF @ 100V	±20V	-	151W (Tc)	190 mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
C2M1000170J-TR	Cree/Wolfspeed	MOSFET N-CH 1700V 5.3A TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ) Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Stock7,968	SiCFET (Silicon Carbide)	1700V	5.3A (Tc)	20V	3.1V @ 500µA (Typ)	13nC @ 20V	200pF @ 1000V	+25V, -10V	-	78W (Tc)	1.4 Ohm @ 2A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
PSMN8R5-100PSFQ	Nexperia USA Inc.	MOSFET N-CH 100V 98A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 98A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3181pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 183W (Ta) Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,952	MOSFET (Metal Oxide)	100V	98A (Ta)	7V, 10V	4V @ 1mA	44.5nC @ 10V	3181pF @ 50V	±20V	-	183W (Ta)	8.7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
RSD175N10TL	Rohm Semiconductor	MOSFET N-CH 100V 17.5A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 8.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock30,984	MOSFET (Metal Oxide)	100V	17.5A (Ta)	4V, 10V	2.5V @ 1mA	24nC @ 10V	950pF @ 25V	±20V	-	20W (Tc)	105 mOhm @ 8.8A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
STP12N50M2	STMicroelectronics	MOSFET N-CH 500V 10A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,176	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	4V @ 250µA	15nC @ 10V	560pF @ 100V	±25V	-	85W (Tc)	380 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FCP220N80	Fairchild/ON Semiconductor	MOSFET N-CH 800V 23A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 2.3mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock19,584	MOSFET (Metal Oxide)	800V	23A (Tc)	10V	4.5V @ 2.3mA	105nC @ 10V	4560pF @ 100V	±20V	-	278W (Tc)	220 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FDD120AN15A0_F085	Fairchild/ON Semiconductor	MOSFET N-CH 150V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 743pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,544	MOSFET (Metal Oxide)	150V	14A (Tc)	10V	4V @ 250µA	14nC @ 10V	743pF @ 25V	±20V	-	65W (Tc)	120 mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
STI6N62K3	STMicroelectronics	MOSFET N-CH 620V 5.5A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock15,732	MOSFET (Metal Oxide)	620V	5.5A (Tc)	10V	4.5V @ 50µA	34nC @ 10V	875pF @ 50V	±30V	-	90W (Tc)	1.2 Ohm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
AON6240	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 27A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6550pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock203,028	MOSFET (Metal Oxide)	40V	27A (Ta), 85A (Tc)	4.5V, 10V	2.4V @ 250µA	88nC @ 10V	6550pF @ 20V	±20V	-	2.3W (Ta), 83W (Tc)	1.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
BSC097N06NSTATMA1	Infineon Technologies	MOSFET N-CH 60V 13A/48A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	Package: -	Stock12,675	MOSFET (Metal Oxide)	60 V	13A (Ta), 48A (Tc)	6V, 10V	3.3V @ 14µA	15 nC @ 10 V	1075 pF @ 30 V	±20V	-	3W (Ta), 43W (Tc)	9.7mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
TPH4R803PL-LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 48A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: -	Stock14,982	MOSFET (Metal Oxide)	30 V	48A (Tc)	4.5V, 10V	2.1V @ 200µA	22 nC @ 10 V	1975 pF @ 15 V	±20V	-	830mW (Ta), 69W (Tc)	4.8mOhm @ 24A, 10V	175°C	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
IXFT26N100XHV	IXYS	MOSFET N-CH 1000V 26A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 26A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Stock69	MOSFET (Metal Oxide)	1000 V	26A (Ta)	10V	6V @ 4mA	113 nC @ 10 V	3290 pF @ 25 V	±30V	-	860mW (Ta)	320mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TK110P10PL-RQ	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock4,038	MOSFET (Metal Oxide)	100 V	40A (Tc)	4.5V, 10V	2.5V @ 300µA	33 nC @ 10 V	2040 pF @ 50 V	±20V	-	75W (Tc)	10.6mOhm @ 20A, 10V	175°C	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
EPC7002ASH	EPC Space, LLC	GAN FET HEMT 40V 8A 4FSMD-A FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock150	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2301H	Goford Semiconductor	P30V,RD(MAX)<130M@-4.5V,RD(MAX)< FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890mW (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock8,514	MOSFET (Metal Oxide)	30 V	2.8A (Tc)	4.5V, 10V	2.4V @ 250µA	12 nC @ 2.5 V	405 pF @ 10 V	±20V	-	890mW (Tc)	75mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
STW72N60DM6AG	STMicroelectronics	DISCRETE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4444 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	56A (Tc)	10V	4.75V @ 250µA	98 nC @ 10 V	4444 pF @ 100 V	±25V	-	390W (Tc)	42mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
UPA2708GR-E2-A	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-