Page 841 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSR315PL6327HTSA1
Infineon Technologies

MOSFET P-CH 60V 620MA SC-59

Package: TO-236-3, SC-59, SOT-23-3

Stock4,880
IPS135N03LGAKMA1
Infineon Technologies

MOSFET N-CH 30V 30A TO251-3

Package: TO-251-3 Stub Leads, IPak

Stock3,488
BSS225L6327HTSA1
Infineon Technologies

MOSFET N-CH 600V 0.09A SOT-89

Package: TO-243AA

Stock2,816
SI3499DV-T1-E3
Vishay Siliconix

MOSFET P-CH 8V 5.3A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,744
NTB4302G
ON Semiconductor

MOSFET N-CH 30V 74A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,240
IRF644STRRPBF
Vishay Siliconix

MOSFET N-CH 250V 14A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,680
SI8413DB-T1-E1
Vishay Siliconix

MOSFET P-CH 20V 4.8A 2X2 4-MFP

Package: 4-XFBGA, CSPBGA

Stock7,097,160
DMN3027LFG-13
Diodes Incorporated

MOSFET N-CH 30V POWERDI3333-8

Package: 8-PowerWDFN

Stock3,664
DMP6185SE-13
Diodes Incorporated

MOSFET PCH 60V 3A SOT223

Package: TO-261-4, TO-261AA

Stock2,064
FDS6673BZ_F085
Fairchild/ON Semiconductor

MOSFET P-CH 30V 14.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,464
IRF7809AVTRPBF
Infineon Technologies

MOSFET N-CH 30V 13.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock33,684
5LN01M-TL-H
ON Semiconductor

MOSFET N-CH 50V 100MA SC59

Package: SC-70, SOT-323

Stock50,538
ZVN4310A
Diodes Incorporated

MOSFET N-CH 100V 0.9A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock87,318
ZXMN0545G4TA
Diodes Incorporated

MOSFET N-CH 450V 140MA SOT-223

Package: TO-261-4, TO-261AA

Stock32,496
R6520KNZC17
Rohm Semiconductor

MOSFET N-CH 650V 20A TO3

Package: -

Stock900
2SK3432-AZ
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
IPD18DP10LMATMA1
Infineon Technologies

TRENCH >=100V PG-TO252-3

Package: -

Stock6,354
DMP65H11D0HSS-13
Diodes Incorporated

MOSFET BVDSS: 501V~650V SO-8 T&R

Package: -

Request a Quote
IAUC120N06S5L022ATMA1
Infineon Technologies

MOSFET_)40V 60V)

Package: -

Stock14,874
RQ3L070ATTB
Rohm Semiconductor

PCH -60V -25A, HSMT8, POWER MOSF

Package: -

Stock19,728

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSR315PL6327HTSA1	Infineon Technologies	MOSFET P-CH 60V 620MA SC-59 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 620mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 176pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 800 mOhm @ 620mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SC-59 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,880	MOSFET (Metal Oxide)	60V	620mA (Ta)	4.5V, 10V	2V @ 160µA	6nC @ 10V	176pF @ 25V	±20V	-	500mW (Ta)	800 mOhm @ 620mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SC-59	TO-236-3, SC-59, SOT-23-3
IPS135N03LGAKMA1	Infineon Technologies	MOSFET N-CH 30V 30A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock3,488	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2.2V @ 250µA	10nC @ 10V	1000pF @ 15V	±20V	-	31W (Tc)	13.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
BSS225L6327HTSA1	Infineon Technologies	MOSFET N-CH 600V 0.09A SOT-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 131pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89 Package / Case: TO-243AA	Package: TO-243AA	Stock2,816	MOSFET (Metal Oxide)	600V	90mA (Ta)	4.5V, 10V	2.3V @ 94µA	5.8nC @ 10V	131pF @ 25V	±20V	-	1W (Ta)	45 Ohm @ 90mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT89	TO-243AA
SI3499DV-T1-E3	Vishay Siliconix	MOSFET P-CH 8V 5.3A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 750mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,744	MOSFET (Metal Oxide)	8V	5.3A (Ta)	1.5V, 4.5V	750mV @ 250µA	42nC @ 4.5V	-	±5V	-	1.1W (Ta)	23 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
NTB4302G	ON Semiconductor	MOSFET N-CH 30V 74A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,240	MOSFET (Metal Oxide)	30V	74A (Tc)	4.5V, 10V	3V @ 250µA	28nC @ 4.5V	2400pF @ 24V	±20V	-	80W (Tc)	9.3 mOhm @ 37A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF644STRRPBF	Vishay Siliconix	MOSFET N-CH 250V 14A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,680	MOSFET (Metal Oxide)	250V	14A (Tc)	10V	4V @ 250µA	68nC @ 10V	1300pF @ 25V	±20V	-	3.1W (Ta), 125W (Tc)	280 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI8413DB-T1-E1	Vishay Siliconix	MOSFET P-CH 20V 4.8A 2X2 4-MFP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.47W (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	Package: 4-XFBGA, CSPBGA	Stock7,097,160	MOSFET (Metal Oxide)	20V	4.8A (Ta)	2.5V, 4.5V	1.4V @ 250µA	21nC @ 4.5V	-	±12V	-	1.47W (Ta)	48 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-XFBGA, CSPBGA
DMN3027LFG-13	Diodes Incorporated	MOSFET N-CH 30V POWERDI3333-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 18.6 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,664	MOSFET (Metal Oxide)	30V	5.3A (Ta)	4.5V, 10V	1.8V @ 250µA	11.3nC @ 10V	580pF @ 15V	±25V	-	1W (Ta)	18.6 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
DMP6185SE-13	Diodes Incorporated	MOSFET PCH 60V 3A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 708pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock2,064	MOSFET (Metal Oxide)	60V	3A (Ta)	4.5V, 10V	3V @ 250µA	14nC @ 10V	708pF @ 30V	±20V	-	1.2W (Ta)	150 mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
FDS6673BZ_F085	Fairchild/ON Semiconductor	MOSFET P-CH 30V 14.5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,464	MOSFET (Metal Oxide)	30V	14.5A (Ta)	4.5V, 10V	3V @ 250µA	124nC @ 10V	4700pF @ 25V	±25V	-	2.5W (Ta)	7.8 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7809AVTRPBF	Infineon Technologies	MOSFET N-CH 30V 13.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3780pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock33,684	MOSFET (Metal Oxide)	30V	13.3A (Ta)	4.5V	1V @ 250µA	62nC @ 5V	3780pF @ 16V	±12V	-	2.5W (Ta)	9 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
5LN01M-TL-H	ON Semiconductor	MOSFET N-CH 50V 100MA SC59 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-MCP Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock50,538	MOSFET (Metal Oxide)	50V	100mA (Ta)	1.5V, 4V	-	1.57nC @ 10V	6.6pF @ 10V	±10V	-	150mW (Ta)	7.8 Ohm @ 50mA, 4V	150°C (TJ)	Surface Mount	3-MCP	SC-70, SOT-323
ZVN4310A	Diodes Incorporated	MOSFET N-CH 100V 0.9A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 500 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock87,318	MOSFET (Metal Oxide)	100V	900mA (Ta)	5V, 10V	3V @ 1mA	-	350pF @ 25V	±20V	-	850mW (Ta)	500 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
ZXMN0545G4TA	Diodes Incorporated	MOSFET N-CH 450V 140MA SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 50 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock32,496	MOSFET (Metal Oxide)	450V	140mA (Ta)	10V	3V @ 1mA	-	70pF @ 25V	±20V	-	2W (Ta)	50 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
R6520KNZC17	Rohm Semiconductor	MOSFET N-CH 650V 20A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Stock900	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	5V @ 630µA	40 nC @ 10 V	1550 pF @ 25 V	±20V	-	68W (Tc)	205mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
2SK3432-AZ	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD18DP10LMATMA1	Infineon Technologies	TRENCH >=100V PG-TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1.04mA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock6,354	MOSFET (Metal Oxide)	100 V	2.5A (Ta), 13.9A (Tc)	4.5V, 10V	2V @ 1.04mA	42 nC @ 10 V	2100 pF @ 50 V	±20V	-	3W (Ta), 83W (Tc)	178mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMP65H11D0HSS-13	Diodes Incorporated	MOSFET BVDSS: 501V~650V SO-8 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 11Ohm @ 270mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	270mA (Ta)	10V	4V @ 250µA	13 nC @ 10 V	670 pF @ 25 V	±30V	-	1.9W (Ta)	11Ohm @ 270mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IAUC120N06S5L022ATMA1	Infineon Technologies	MOSFET_)40V 60V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 65µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	Package: -	Stock14,874	MOSFET (Metal Oxide)	60 V	170A (Tj)	4.5V, 10V	2.2V @ 65µA	77 nC @ 10 V	5651 pF @ 30 V	±20V	-	136W (Tc)	2.2mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-34	8-PowerTDFN
RQ3L070ATTB	Rohm Semiconductor	PCH -60V -25A, HSMT8, POWER MOSF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: -	Stock19,728	MOSFET (Metal Oxide)	60 V	25A (Tc)	4.5V, 10V	2.5V @ 1mA	48 nC @ 10 V	2850 pF @ 30 V	±20V	-	2W (Ta)	28mOhm @ 7A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
FCPF260N60E-F152	onsemi	MOSFET N-CH 600V 15A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	15A (Tc)	-	3.5V @ 250µA	62 nC @ 10 V	2500 pF @ 25 V	-	-	36W (Tc)	260mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
DMN52D0UW-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT323 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 400µW Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	380mA (Ta)	1.8V, 5V	1V @ 250µA	1.4 nC @ 10 V	39 pF @ 25 V	±12V	-	400µW	2Ohm @ 50mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
IAUA120N04S5N014AUMA1	Infineon Technologies	MOSFET_(20V 40V) PG-HSOF-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.4V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4828 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-2 Package / Case: 5-PowerSFN	Package: -	Stock12,000	MOSFET (Metal Oxide)	40 V	120A (Tc)	7V, 10V	3.4V @ 60µA	82 nC @ 10 V	4828 pF @ 25 V	±20V	-	136W (Tc)	1.4mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-2	5-PowerSFN
SI7794DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 28.6A/60A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 28.6A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 15 V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	28.6A (Ta), 60A (Tc)	4.5V, 10V	2.5V @ 250µA	72 nC @ 10 V	2520 pF @ 15 V	±20V	Schottky Diode (Body)	5W (Ta), 48W (Tc)	3.4mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
NTMTS0D7N06CLTXG	onsemi	MOSFET N-CH 60V 62.2A/477A 8DFNW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 62.2A (Ta), 477A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 294.6W (Tc) Rds On (Max) @ Id, Vgs: 0.68mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	Package: -	Stock9,429	MOSFET (Metal Oxide)	60 V	62.2A (Ta), 477A (Tc)	4.5V, 10V	2.5V @ 250µA	225 nC @ 10 V	16200 pF @ 25 V	±20V	-	5W (Ta), 294.6W (Tc)	0.68mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFNW (8.3x8.4)	8-PowerTDFN
2N7002EY	ANBON SEMICONDUCTOR (INT'L) LIMITED	N-CHANNEL SMD MOSFET ESD PROTECT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock52,872	MOSFET (Metal Oxide)	60 V	340mA (Ta)	4.5V, 10V	2.5V @ 250µA	2.4 nC @ 10 V	18 pF @ 30 V	±20V	-	350mW (Ta)	5Ohm @ 300mA, 10V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
PSMN1R8-80SSFJ	Nexperia USA Inc.	NEXTPOWER 80/100V MOSFETS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 270A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15319 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 341W (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK88 (SOT1235) Package / Case: SOT-1235	Package: -	Stock5,550	MOSFET (Metal Oxide)	80 V	270A (Ta)	7V, 10V	4V @ 1mA	222 nC @ 10 V	15319 pF @ 40 V	±20V	-	341W (Ta)	1.8mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK88 (SOT1235)	SOT-1235
CPH3405-TL-E	onsemi	NCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-