Page 842 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLU4343PBF
Infineon Technologies

MOSFET N-CH 55V 26A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock200,460
BUK954R2-55B,127
Nexperia USA Inc.

MOSFET N-CH 55V 75A TO220AB

Package: TO-220-3

Stock3,568
FQH44N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 48A TO-247

Package: TO-247-3

Stock115,128
FQD5N50TM
Fairchild/ON Semiconductor

MOSFET N-CH 500V 3.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,040
BUK9509-40B,127
Nexperia USA Inc.

MOSFET N-CH 40V 75A TO220AB

Package: TO-220-3

Stock3,472
BUK98180-100A,115
NXP

MOSFET N-CH 100V 4.6A SOT-223

Package: TO-261-4, TO-261AA

Stock7,360
IRF7457TRPBF
Infineon Technologies

MOSFET N-CH 20V 15A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,504
AOB254L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 150V 32A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,056
SQD50N04-5M6_GE3
Vishay Siliconix

MOSFET N-CH 40V 50A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,760
PMPB19XP,115
Nexperia USA Inc.

MOSFET P-CH 20V 7.2A 6DFN

Package: 6-UDFN Exposed Pad

Stock7,424
IXTP20N65X
IXYS

MOSFET N-CH 650V 20A TO-220

Package: TO-220-3

Stock4,592
STD120N4F6
STMicroelectronics

MOSFET N-CH 40V 80A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock122,004
STB150N3LH6
STMicroelectronics

MOSFET N CH 30V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock22,308
ZVP4525ZTA
Diodes Incorporated

MOSFET P-CH 250V 0.205A SOT-89

Package: TO-243AA

Stock15,684
DMP3021SPSW-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V PowerDI506

Package: -

Request a Quote
SI8819EDB-T2-E1
Vishay Siliconix

MOSFET P-CH 12V 2.9A 4MICRO FOOT

Package: -

Stock17,460
IXTA52P10P-TRL
IXYS

MOSFET P-CH 100V 52A TO263

Package: -

Stock6,513
SIHB28N60EF-T1-GE3
Vishay Siliconix

N-CHANNEL 600V

Package: -

Stock2,361
SCT3040KRHRC15
Rohm Semiconductor

1200V, 55A, 4-PIN THD, TRENCH-ST

Package: -

Stock1,305
CTLDM8002A-M621H-BK
Central Semiconductor Corp

MOSFET P-CH 50V 280MA TLM621H

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLU4343PBF	Infineon Technologies	MOSFET N-CH 55V 26A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock200,460	MOSFET (Metal Oxide)	55V	26A (Tc)	4.5V, 10V	1V @ 250µA	42nC @ 10V	740pF @ 50V	±20V	-	79W (Tc)	50 mOhm @ 4.7A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
BUK954R2-55B,127	Nexperia USA Inc.	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 10220pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,568	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	95nC @ 5V	10220pF @ 25V	±15V	-	300W (Tc)	3.7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQH44N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 48A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock115,128	MOSFET (Metal Oxide)	100V	48A (Tc)	10V	4V @ 250µA	62nC @ 10V	1800pF @ 25V	±25V	-	180W (Tc)	39 mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
FQD5N50TM	Fairchild/ON Semiconductor	MOSFET N-CH 500V 3.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,040	MOSFET (Metal Oxide)	500V	3.5A (Tc)	10V	5V @ 250µA	17nC @ 10V	610pF @ 25V	±30V	-	2.5W (Ta), 50W (Tc)	1.8 Ohm @ 1.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9509-40B,127	Nexperia USA Inc.	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,472	MOSFET (Metal Oxide)	40V	75A (Tc)	4.5V, 10V	2V @ 1mA	32nC @ 5V	3600pF @ 25V	±15V	-	157W (Tc)	7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK98180-100A,115	NXP	MOSFET N-CH 100V 4.6A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 8W (Tc) Rds On (Max) @ Id, Vgs: 173 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock7,360	MOSFET (Metal Oxide)	100V	4.6A (Tc)	4.5V, 10V	2V @ 1mA	-	619pF @ 25V	±10V	-	8W (Tc)	173 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRF7457TRPBF	Infineon Technologies	MOSFET N-CH 20V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,504	MOSFET (Metal Oxide)	20V	15A (Ta)	4.5V, 10V	3V @ 250µA	42nC @ 4.5V	3100pF @ 10V	±20V	-	2.5W (Ta)	7 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AOB254L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 150V 32A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,056	MOSFET (Metal Oxide)	150V	4.2A (Ta), 32A (Tc)	4.5V, 10V	2.7V @ 250µA	40nC @ 10V	2150pF @ 75V	±20V	-	2.1W (Ta), 125W (Tc)	46 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SQD50N04-5M6_GE3	Vishay Siliconix	MOSFET N-CH 40V 50A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,760	MOSFET (Metal Oxide)	40V	50A (Tc)	10V	3.5V @ 250µA	85nC @ 10V	4000pF @ 25V	±20V	-	71W (Tc)	5.6 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
PMPB19XP,115	Nexperia USA Inc.	MOSFET P-CH 20V 7.2A 6DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 7.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN2020MD (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock7,424	MOSFET (Metal Oxide)	20V	7.2A (Ta)	1.8V, 4.5V	900mV @ 250µA	43.2nC @ 4.5V	2890pF @ 10V	±12V	-	1.7W (Ta), 12.5W (Tc)	22.5 mOhm @ 7.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN2020MD (2x2)	6-UDFN Exposed Pad
IXTP20N65X	IXYS	MOSFET N-CH 650V 20A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock4,592	MOSFET (Metal Oxide)	650V	20A (Tc)	10V	5.5V @ 250µA	35nC @ 10V	1390pF @ 25V	±30V	-	320W (Tc)	210 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STD120N4F6	STMicroelectronics	MOSFET N-CH 40V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock122,004	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	65nC @ 10V	3850pF @ 25V	±20V	-	110W (Tc)	4 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STB150N3LH6	STMicroelectronics	MOSFET N CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock22,308	MOSFET (Metal Oxide)	30V	80A (Tc)	5V, 10V	2.5V @ 250µA	80nC @ 10V	3800pF @ 25V	±20V	-	110W (Tc)	3 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
ZVP4525ZTA	Diodes Incorporated	MOSFET P-CH 250V 0.205A SOT-89 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 205mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89-3 Package / Case: TO-243AA	Package: TO-243AA	Stock15,684	MOSFET (Metal Oxide)	250V	205mA (Ta)	3.5V, 10V	2V @ 1mA	3.45nC @ 10V	73pF @ 25V	±40V	-	1.2W (Ta)	14 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-89-3	TO-243AA
DMP3021SPSW-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V PowerDI506 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 52.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10.6A (Ta), 52.7A (Tc)	5V, 10V	2.5V @ 250µA	34 nC @ 10 V	1799 pF @ 15 V	±25V	-	1.8W (Ta)	15mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
SI8819EDB-T2-E1	Vishay Siliconix	MOSFET P-CH 12V 2.9A 4MICRO FOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-MICRO FOOT® (0.8x0.8) Package / Case: 4-XFBGA	Package: -	Stock17,460	MOSFET (Metal Oxide)	12 V	2.9A (Ta)	1.5V, 3.7V	900mV @ 250µA	17 nC @ 8 V	650 pF @ 6 V	±8V	-	900mW (Ta)	80mOhm @ 1.5A, 3.7V	-55°C ~ 150°C (TJ)	Surface Mount	4-MICRO FOOT® (0.8x0.8)	4-XFBGA
IXTA52P10P-TRL	IXYS	MOSFET P-CH 100V 52A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock6,513	MOSFET (Metal Oxide)	100 V	52A (Tc)	10V	4V @ 250µA	60 nC @ 10 V	2845 pF @ 25 V	±20V	-	300W (Tc)	50mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHB28N60EF-T1-GE3	Vishay Siliconix	N-CHANNEL 600V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,361	MOSFET (Metal Oxide)	600 V	28A (Tc)	10V	4V @ 250µA	120 nC @ 10 V	2714 pF @ 100 V	±30V	-	250W (Tc)	123mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCT3040KRHRC15	Rohm Semiconductor	1200V, 55A, 4-PIN THD, TRENCH-ST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 262W Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock1,305	MOSFET (Metal Oxide)	1200 V	55A (Tc)	18V	5.6V @ 10mA	107 nC @ 18 V	1337 pF @ 800 V	+22V, -4V	-	262W	52mOhm @ 20A, 18V	175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
CTLDM8002A-M621H-BK	Central Semiconductor Corp	MOSFET P-CH 50V 280MA TLM621H FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TLM621H Package / Case: 6-XFDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	280mA (Ta)	5V, 10V	2.5V @ 250µA	0.72 nC @ 4.5 V	70 pF @ 25 V	20V	-	1.6W (Ta)	2.5Ohm @ 500mA, 10V	-65°C ~ 150°C (TJ)	Surface Mount	TLM621H	6-XFDFN Exposed Pad
SQ4080EY-T1_BE3	Vishay Siliconix	N-CHANNEL 150-V (D-S) 175C MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.1W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock6,570	MOSFET (Metal Oxide)	150 V	18A (Tc)	10V	4V @ 250µA	33 nC @ 10 V	1590 pF @ 75 V	±20V	-	7.1W (Tc)	85mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
PSMQC060N06LS1-AU_R2_006A1	Panjit International Inc.	60V/ 6M / AECQ101 QUALIFIED / SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2057 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060-8 Package / Case: 8-PowerVDFN	Package: -	Stock17,925	MOSFET (Metal Oxide)	60 V	68A (Tc)	4.5V, 10V	3V @ 250µA	37 nC @ 10 V	2057 pF @ 30 V	±20V	-	50W (Tc)	6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060-8	8-PowerVDFN
EC4304C-TL	onsemi	PCH 1.5V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AM2302NE-T1-PF-ML	MOSLEADER	Single N 20V 3A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2302	Goford Semiconductor	MOSFET N-CH 20V 4.3A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 2.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock18,507	MOSFET (Metal Oxide)	20 V	4.3A (Tc)	2.5V, 4.5V	1.1V @ 250µA	10 nC @ 4.5 V	300 pF @ 10 V	±10V	-	1W (Tc)	27mOhm @ 2.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSZ340N08NS3GATMA1	Infineon Technologies	MOSFET N-CH 80V 6A/23A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 12µA Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 32W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: -	Stock135,243	MOSFET (Metal Oxide)	80 V	6A (Ta), 23A (Tc)	6V, 10V	3.5V @ 12µA	9.1 nC @ 10 V	630 pF @ 40 V	±20V	-	2.1W (Ta), 32W (Tc)	34mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
SCH1406-TL-E-ON	onsemi	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHP068N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 41A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock3,000	MOSFET (Metal Oxide)	600 V	41A (Tc)	10V	5V @ 250µA	77 nC @ 10 V	2628 pF @ 100 V	±30V	-	250W (Tc)	68mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3