Page 860 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

94-2989
Infineon Technologies

MOSFET N-CH 55V 64A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,808
IXFN100N10S2
IXYS

MOSFET N-CH 100V 100A SOT-227B

Package: SOT-227-4, miniBLOC

Stock4,512
SIA814DJ-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 4.5A SC70-6

Package: PowerPAK? SC-70-6 Dual

Stock120,012
APT12F60K
Microsemi Corporation

MOSFET N-CH 600V 12A TO-220

Package: TO-220-3

Stock6,112
IRF540,127
NXP

MOSFET N-CH 100V 23A TO220AB

Package: TO-220-3

Stock2,272
IRFBC20L
Vishay Siliconix

MOSFET N-CH 600V 2.2A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,048
BSH121,135
Nexperia USA Inc.

MOSFET N-CH 75V 300MA SOT323

Package: SC-70, SOT-323

Stock3,104
AUIRLR2905TRL
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,880
MMIX1F40N110P
IXYS

MOSFET N-CH 1100V 24A SMPD

Package: 24-PowerSMD, 21 Leads

Stock2,624
IXTA130N065T2
IXYS

MOSFET N-CH 65V 130A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,280
AOL1240
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 19A 8ULTRASO

Package: 3-PowerSMD, Flat Leads

Stock7,472
AO4286
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 4A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock972,300
AO3160
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V .04A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock17,880
STF14N80K5
STMicroelectronics

MOSFET N-CH 800V 12A TO220FP

Package: TO-220-3 Full Pack

Stock5,200
FDMS86103L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 12A POWER56

Package: 8-PowerTDFN

Stock5,936
DMTH4007LPS-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI506

Package: 8-PowerTDFN

Stock2,448
IRFPS3810PBF
Infineon Technologies

MOSFET N-CH 100V 170A SUPER247

Package: TO-274AA

Stock19,920
STB14NK60ZT4
STMicroelectronics

MOSFET N-CH 600V 13.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock308,256
IXFA22N60P3
IXYS

MOSFET N-CH 600V 22A TO263AA

Package: -

Request a Quote
SL3007-TP
Micro Commercial Co

P-CHANNEL MOSFET, SOT-23-3L

Package: -

Stock13,749

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
94-2989	Infineon Technologies	MOSFET N-CH 55V 64A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,808	MOSFET (Metal Oxide)	55V	64A (Tc)	10V	4V @ 250µA	81nC @ 10V	1970pF @ 25V	±20V	-	3.8W (Ta), 130W (Tc)	14 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFN100N10S2	IXYS	MOSFET N-CH 100V 100A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,512	MOSFET (Metal Oxide)	100V	100A	10V	4V @ 4mA	180nC @ 10V	4500pF @ 25V	±20V	-	360W (Tc)	15 mOhm @ 500mA, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
SIA814DJ-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 4.5A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc) Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Dual Package / Case: PowerPAK? SC-70-6 Dual	Package: PowerPAK? SC-70-6 Dual	Stock120,012	MOSFET (Metal Oxide)	30V	4.5A (Tc)	2.5V, 10V	1.5V @ 250µA	11nC @ 10V	340pF @ 10V	±12V	Schottky Diode (Isolated)	1.9W (Ta), 6.5W (Tc)	61 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
APT12F60K	Microsemi Corporation	MOSFET N-CH 600V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 225W (Tc) Rds On (Max) @ Id, Vgs: 620 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 [K] Package / Case: TO-220-3	Package: TO-220-3	Stock6,112	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	5V @ 500µA	55nC @ 10V	2200pF @ 25V	±30V	-	225W (Tc)	620 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 [K]	TO-220-3
IRF540,127	NXP	MOSFET N-CH 100V 23A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1187pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,272	MOSFET (Metal Oxide)	100V	23A (Tc)	10V	4V @ 1mA	65nC @ 10V	1187pF @ 25V	±20V	-	100W (Tc)	77 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFBC20L	Vishay Siliconix	MOSFET N-CH 600V 2.2A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,048	MOSFET (Metal Oxide)	600V	2.2A (Tc)	10V	4V @ 250µA	18nC @ 10V	350pF @ 25V	±20V	-	3.1W (Ta), 50W (Tc)	4.4 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
BSH121,135	Nexperia USA Inc.	MOSFET N-CH 75V 300MA SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock3,104	MOSFET (Metal Oxide)	75V	300mA (Ta)	1.8V, 4.5V	1.3V @ 1mA	1nC @ 8V	40pF @ 10V	±8V	-	700mW (Tc)	4 Ohm @ 500mA, 4.5V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-323-3	SC-70, SOT-323
AUIRLR2905TRL	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,880	MOSFET (Metal Oxide)	55V	42A (Tc)	4V, 10V	2V @ 250µA	48nC @ 5V	1700pF @ 25V	±16V	-	110W (Tc)	27 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
MMIX1F40N110P	IXYS	MOSFET N-CH 1100V 24A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1100V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMPD Package / Case: 24-PowerSMD, 21 Leads	Package: 24-PowerSMD, 21 Leads	Stock2,624	MOSFET (Metal Oxide)	1100V	24A (Tc)	10V	6.5V @ 1mA	310nC @ 10V	19000pF @ 25V	±30V	-	500W (Tc)	290 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SMPD	24-PowerSMD, 21 Leads
IXTA130N065T2	IXYS	MOSFET N-CH 65V 130A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,280	MOSFET (Metal Oxide)	65V	130A (Tc)	10V	4V @ 250µA	79nC @ 10V	4800pF @ 25V	±20V	-	250W (Tc)	6.6 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AOL1240	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 19A 8ULTRASO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UltraSO-8? Package / Case: 3-PowerSMD, Flat Leads	Package: 3-PowerSMD, Flat Leads	Stock7,472	MOSFET (Metal Oxide)	40V	19A (Ta), 69A (Tc)	4.5V, 10V	2.3V @ 250µA	50.5nC @ 10V	3800pF @ 20V	±20V	-	2.1W (Ta), 125W (Tc)	3 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	UltraSO-8?	3-PowerSMD, Flat Leads
AO4286	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 4A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock972,300	MOSFET (Metal Oxide)	100V	4A (Tc)	4.5V, 10V	2.9V @ 250µA	10nC @ 10V	390pF @ 50V	±20V	-	2.5W (Ta)	68 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
AO3160	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V .04A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3.2V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.39W (Ta) Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock17,880	MOSFET (Metal Oxide)	600V	40mA (Ta)	4.5V, 10V	3.2V @ 8µA	1.5nC @ 10V	15pF @ 25V	±20V	-	1.39W (Ta)	500 Ohm @ 16mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
STF14N80K5	STMicroelectronics	MOSFET N-CH 800V 12A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 445 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,200	MOSFET (Metal Oxide)	800V	12A (Tc)	10V	5V @ 100µA	22nC @ 10V	620pF @ 100V	±30V	-	30W (Tc)	445 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
FDMS86103L	Fairchild/ON Semiconductor	MOSFET N-CH 100V 12A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,936	MOSFET (Metal Oxide)	100V	12A (Ta), 49A (Tc)	4.5V, 10V	3V @ 250µA	60nC @ 10V	3710pF @ 50V	±20V	-	2.5W (Ta), 104W (Tc)	8 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
DMTH4007LPS-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V POWERDI506 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1895pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,448	MOSFET (Metal Oxide)	40V	15.5A (Ta), 100A (Tc)	4.5V, 10V	3V @ 250µA	29.1nC @ 10V	1895pF @ 30V	±20V	-	2.7W (Ta), 150W (Tc)	6.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
IRFPS3810PBF	Infineon Technologies	MOSFET N-CH 100V 170A SUPER247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6790pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 580W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-247 (TO-274AA) Package / Case: TO-274AA	Package: TO-274AA	Stock19,920	MOSFET (Metal Oxide)	100V	170A (Tc)	10V	5V @ 250µA	390nC @ 10V	6790pF @ 25V	±30V	-	580W (Tc)	9 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	SUPER-247 (TO-274AA)	TO-274AA
STB14NK60ZT4	STMicroelectronics	MOSFET N-CH 600V 13.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock308,256	MOSFET (Metal Oxide)	600V	13.5A (Tc)	10V	4.5V @ 100µA	75nC @ 10V	2220pF @ 25V	±30V	-	160W (Tc)	500 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA22N60P3	IXYS	MOSFET N-CH 600V 22A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	22A (Tc)	10V	5V @ 1.5mA	38 nC @ 10 V	2600 pF @ 25 V	±30V	-	500W (Tc)	390mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SL3007-TP	Micro Commercial Co	P-CHANNEL MOSFET, SOT-23-3L FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3L Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock13,749	MOSFET (Metal Oxide)	30 V	7A	4.5V, 10V	2.5V @ 250µA	30 nC @ 10 V	1500 pF @ 15 V	±20V	-	1.9W	25mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3L	TO-236-3, SC-59, SOT-23-3
IXTA1970-TRL	IXYS	MOSFET N-CH TO263 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIR4608DP-T1-GE3	Vishay Siliconix	N-CHANNEL 60 V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 42.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 11.8mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock18,150	MOSFET (Metal Oxide)	60 V	13.1A (Ta), 42.8A (Tc)	7.5V, 10V	4V @ 250µA	18 nC @ 10 V	740 pF @ 30 V	±20V	-	3.6W (Ta), 39W (Tc)	11.8mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
STHU36N60DM6AG	STMicroelectronics	AUTOMOTIVE-GRADE N-CHANNEL 600 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: HU3PAK Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	29A (Tc)	10V	4.75V @ 250µA	46 nC @ 10 V	1960 pF @ 100 V	±25V	-	210W (Tc)	99mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	HU3PAK	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
UJ4C075033K4S	Qorvo	750V/33MOHM, SIC, CASCODE, G4, T FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 242W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock3,324	SiCFET (Cascode SiCJFET)	750 V	47A (Tc)	12V	6V @ 10mA	37.8 nC @ 15 V	1400 pF @ 400 V	±20V	-	242W (Tc)	41mOhm @ 30A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
R6524KNZC17	Rohm Semiconductor	MOSFET N-CH 650V 24A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Stock900	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	5V @ 750µA	45 nC @ 10 V	1850 pF @ 25 V	±20V	-	74W (Tc)	185mOhm @ 11.3A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
TJ80S04M3L-LXHQ	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 80A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock16,722	MOSFET (Metal Oxide)	40 V	80A (Ta)	6V, 10V	3V @ 1mA	158 nC @ 10 V	7770 pF @ 10 V	+10V, -20V	-	100W (Tc)	5.2mOhm @ 40A, 10V	175°C	Surface Mount	DPAK+	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMTH3002LK3-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V TO252 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4336 pF @ 15 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 2.45mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	150A (Tc)	4.5V, 10V	2V @ 1mA	69 nC @ 15 V	4336 pF @ 15 V	±16V	-	1.9W (Ta)	2.45mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
FDMC7696-L701	onsemi	PT7 N MLP3.3X3.3 COM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Stock9,000	MOSFET (Metal Oxide)	30 V	12A (Ta), 20A (Tc)	4.5V, 10V	3V @ 250µA	22 nC @ 10 V	1430 pF @ 15 V	±20V	-	2.4W (Ta), 25W (Tc)	11.5mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN