Page 861 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6618TR1
Infineon Technologies

MOSFET N-CH 30V 30A DIRECTFET

Package: DirectFET? Isometric MT

Stock46,644
IRFR18N15DTRL
Infineon Technologies

MOSFET N-CH 150V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,256
IRF7458TR
Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock140,040
NDD03N50Z-1G
ON Semiconductor

MOSFET N-CH 500V 2.6A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,464
NTTS2P03R2G
ON Semiconductor

MOSFET P-CH 30V 2.1A 8MICRO

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock831,936
FDMS8660S
Fairchild/ON Semiconductor

MOSFET N-CH 30V 25A POWER56

Package: 8-PowerTDFN

Stock75,192
ZXM66P02N8TC
Diodes Incorporated

MOSFET P-CH 20V 6.4A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock434,808
STP8NM60D
STMicroelectronics

MOSFET N-CH 600V 8A TO-220

Package: TO-220-3

Stock4,448
STD4NK50ZD
STMicroelectronics

MOSFET N-CH 500V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock426,120
IXFT74N20
IXYS

MOSFET N-CH 200V 74A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4,656
SQM110N05-06L_GE3
Vishay Siliconix

MOSFET N-CH 55V 110A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,792
BUK7620-100A,118
Nexperia USA Inc.

MOSFET N-CH 100V 63A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,968
CSD17303Q5
Texas Instruments

MOSFET N-CH 30V 100A 8SON

Package: 8-PowerTDFN

Stock346,440
STD12N65M2
STMicroelectronics

MOSFET N-CH 650V 8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,928
CDM3-800 TR13
Central Semiconductor Corp

MOSFET N-CH 3A 800V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,768
DMN21D2UFB-7B
Diodes Incorporated

MOSFET N-CH 20V 0.76A 3DFN

Package: 3-UFDFN

Stock95,814
FDS4685
Fairchild/ON Semiconductor

MOSFET P-CH 40V 8.2A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock481,752
AONR66922
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 15A/50A 8DFN

Package: -

Stock41,688
SM2331PSAC-TRG-ML
MOSLEADER

P -20V -3.9A SOT-23

Package: -

Request a Quote
DMP2067LVTQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V TSOT26 T&R

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6618TR1	Infineon Technologies	MOSFET N-CH 30V 30A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	Package: DirectFET? Isometric MT	Stock46,644	MOSFET (Metal Oxide)	30V	30A (Ta), 170A (Tc)	4.5V, 10V	2.35V @ 250µA	65nC @ 4.5V	5640pF @ 15V	±20V	-	2.8W (Ta), 89W (Tc)	2.2 mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MT	DirectFET? Isometric MT
IRFR18N15DTRL	Infineon Technologies	MOSFET N-CH 150V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,256	MOSFET (Metal Oxide)	150V	18A (Tc)	10V	5.5V @ 250µA	43nC @ 10V	900pF @ 25V	±30V	-	110W (Tc)	125 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7458TR	Infineon Technologies	MOSFET N-CH 30V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V, 16V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 16V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock140,040	MOSFET (Metal Oxide)	30V	14A (Ta)	10V, 16V	4V @ 250µA	59nC @ 10V	2410pF @ 15V	±30V	-	2.5W (Ta)	8 mOhm @ 14A, 16V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NDD03N50Z-1G	ON Semiconductor	MOSFET N-CH 500V 2.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 274pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,464	MOSFET (Metal Oxide)	500V	2.6A (Tc)	10V	4.5V @ 50µA	10nC @ 10V	274pF @ 25V	±30V	-	58W (Tc)	3.3 Ohm @ 1.15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTTS2P03R2G	ON Semiconductor	MOSFET P-CH 30V 2.1A 8MICRO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.48A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock831,936	MOSFET (Metal Oxide)	30V	2.1A (Ta)	4.5V, 10V	3V @ 250µA	22nC @ 4.5V	500pF @ 24V	±20V	-	600mW (Ta)	85 mOhm @ 2.48A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
FDMS8660S	Fairchild/ON Semiconductor	MOSFET N-CH 30V 25A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4345pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock75,192	MOSFET (Metal Oxide)	30V	25A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	113nC @ 10V	4345pF @ 15V	±20V	-	2.5W (Ta), 83W (Tc)	2.4 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
ZXM66P02N8TC	Diodes Incorporated	MOSFET P-CH 20V 6.4A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2068pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 3.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock434,808	MOSFET (Metal Oxide)	20V	6.4A (Ta)	2.5V, 4.5V	700mV @ 250µA	43.3nC @ 4.5V	2068pF @ 15V	±12V	-	1.56W (Ta)	25 mOhm @ 3.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STP8NM60D	STMicroelectronics	MOSFET N-CH 600V 8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,448	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	5V @ 250µA	18nC @ 10V	380pF @ 25V	±30V	-	100W (Tc)	1 Ohm @ 2.5A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STD4NK50ZD	STMicroelectronics	MOSFET N-CH 500V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock426,120	MOSFET (Metal Oxide)	500V	3A (Tc)	10V	4.5V @ 50µA	12nC @ 10V	310pF @ 25V	±30V	-	45W (Tc)	2.7 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFT74N20	IXYS	MOSFET N-CH 200V 74A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4,656	MOSFET (Metal Oxide)	200V	74A (Tc)	10V	4V @ 4mA	280nC @ 10V	5400pF @ 25V	±20V	-	360W (Tc)	30 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
SQM110N05-06L_GE3	Vishay Siliconix	MOSFET N-CH 55V 110A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,792	MOSFET (Metal Oxide)	55V	110A (Tc)	4.5V, 10V	2.5V @ 250µA	110nC @ 10V	4440pF @ 25V	±20V	-	157W (Tc)	6 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7620-100A,118	Nexperia USA Inc.	MOSFET N-CH 100V 63A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 4373pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,968	MOSFET (Metal Oxide)	100V	63A (Tc)	10V	4V @ 1mA	-	4373pF @ 25V	±20V	-	200W (Tc)	20 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
CSD17303Q5	Texas Instruments	MOSFET N-CH 30V 100A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3420pF @ 15V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 3.2W (Ta) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock346,440	MOSFET (Metal Oxide)	30V	32A (Ta), 100A (Tc)	3V, 8V	1.6V @ 250µA	23nC @ 4.5V	3420pF @ 15V	+10V, -8V	-	3.2W (Ta)	2.4 mOhm @ 25A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON-CLIP (5x6)	8-PowerTDFN
STD12N65M2	STMicroelectronics	MOSFET N-CH 650V 8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,928	MOSFET (Metal Oxide)	650V	8A (Tc)	10V	4V @ 250µA	16.5nC @ 10V	535pF @ 100V	±25V	-	85W (Tc)	500 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
CDM3-800 TR13	Central Semiconductor Corp	MOSFET N-CH 3A 800V DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 25V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,768	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	4V @ 250µA	11.3nC @ 10V	415pF @ 25V	30V	-	80W (Tc)	4.8 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
DMN21D2UFB-7B	Diodes Incorporated	MOSFET N-CH 20V 0.76A 3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 760mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 380mW (Ta) Rds On (Max) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006 (1.0x0.6) Package / Case: 3-UFDFN	Package: 3-UFDFN	Stock95,814	MOSFET (Metal Oxide)	20V	760mA (Ta)	1.5V, 4.5V	1V @ 250µA	0.93nC @ 10V	27.6pF @ 16V	±12V	-	380mW (Ta)	990 mOhm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	3-DFN1006 (1.0x0.6)	3-UFDFN
FDS4685	Fairchild/ON Semiconductor	MOSFET P-CH 40V 8.2A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1872pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 27 mOhm @ 8.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock481,752	MOSFET (Metal Oxide)	40V	8.2A (Ta)	4.5V, 10V	3V @ 250µA	27nC @ 5V	1872pF @ 20V	±20V	-	2.5W (Ta)	27 mOhm @ 8.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AONR66922	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 15A/50A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.1W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Stock41,688	MOSFET (Metal Oxide)	100 V	15A (Ta), 50A (Tc)	4.5V, 10V	2.5V @ 250µA	46 nC @ 10 V	2180 pF @ 50 V	±20V	-	4.1W (Ta), 52W (Tc)	9mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3.3x3.3)	8-PowerWDFN
SM2331PSAC-TRG-ML	MOSLEADER	P -20V -3.9A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP2067LVTQ-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V TSOT26 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	2.5V, 4.5V	1.5V @ 250µA	28 nC @ 8 V	1575 pF @ 10 V	±8V	-	1.2W (Ta)	45mOhm @ 4.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
AONS36352	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V DFN 5X6 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQ2361CEES-T1_GE3	Vishay Siliconix	MOSFET P-CH 60V 2.8A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	2.8A (Tc)	4.5V, 10V	2.5V @ 250µA	15 nC @ 10 V	620 pF @ 30 V	±20V	-	2W (Tc)	170mOhm @ 2.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
STW48N60M6-4	STMicroelectronics	MOSFET N-CH 600V 39A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2578 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 19.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	39A (Tc)	10V	4.75V @ 250µA	57 nC @ 10 V	2578 pF @ 100 V	±25V	-	250W (Tc)	69mOhm @ 19.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4	TO-247-4
IXFN50N120SIC	IXYS	SICFET N-CH 1200V 47A SOT227B FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 1000 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: -	Stock45	SiCFET (Silicon Carbide)	1200 V	47A (Tc)	20V	2.4V @ 10mA	100 nC @ 20 V	1900 pF @ 1000 V	+20V, -5V	-	-	50mOhm @ 40A, 20V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
NVMFS5C456NWFT1G	onsemi	MOSFET N-CH 40V 20A/80A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	20A (Ta), 80A (Tc)	10V	3.5V @ 250µA	18 nC @ 10 V	1150 pF @ 25 V	±20V	-	3.6W (Ta), 55W (Tc)	4.5mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SI2101-TP	Micro Commercial Co	MOSFET P-CH 20V 1.4A SOT323 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 8 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 290mW Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	1.4A (Tj)	1.8V, 4.5V	1.2V @ 250µA	-	640 pF @ 8 V	±8V	-	290mW	100mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
NTMTS0D6N04CTXG	onsemi	MOSFET N-CH 40V 533A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 533A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	533A (Tc)	10V	4V @ 250µA	187 nC @ 10 V	11800 pF @ 20 V	±20V	-	5W	0.48mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFNW (8.3x8.4)	8-PowerTDFN
BUK9M31-60ELX	Nexperia USA Inc.	SINGLE N-CHANNEL 60 V, 21 MOHM L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1867 pF @ 25 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 62W (Ta) Rds On (Max) @ Id, Vgs: 20.6mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: -	Stock8,682	MOSFET (Metal Oxide)	60 V	35A (Ta)	4.5V, 10V	2.1V @ 1mA	37 nC @ 10 V	1867 pF @ 25 V	±10V	-	62W (Ta)	20.6mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)