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Infineon Technologies |
MOSFET N-CH 30V 71A 2WDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M?
- Package / Case: 3-WDSON
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Package: 3-WDSON |
Stock2,384 |
|
MOSFET (Metal Oxide) | 30V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 29nC @ 10V | 2700pF @ 15V | ±20V | - | 2.3W (Ta), 42W (Tc) | 5.3 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M? | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 20V 93A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock5,104 |
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MOSFET (Metal Oxide) | 20V | 93A (Tc) | 4.5V, 10V | 2.45V @ 250µA | 27nC @ 4.5V | 2160pF @ 10V | ±20V | - | 79W (Tc) | 5.7 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 20V 39A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 23A, 7V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,472 |
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MOSFET (Metal Oxide) | 20V | 39A (Tc) | 4.5V, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | ±10V | - | 57W (Tc) | 20 mOhm @ 23A, 7V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 24A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock576,000 |
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MOSFET (Metal Oxide) | 30V | 24A (Tc) | 4.5V, 10V | 1V @ 250µA | 15nC @ 4.5V | 450pF @ 25V | ±16V | - | 45W (Tc) | 40 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 85A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3210pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 43A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,960 |
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MOSFET (Metal Oxide) | 55V | 85A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 3210pF @ 25V | ±20V | - | 180W (Tc) | 11 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 12A 8SO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2007pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,440 |
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MOSFET (Metal Oxide) | 60V | 12A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 20nC @ 4.5V | 2007pF @ 30V | ±20V | - | 3.1W (Ta) | 11 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 35A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5160pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock7,184 |
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MOSFET (Metal Oxide) | 30V | 21A (Ta), 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 118nC @ 10V | 5160pF @ 15V | ±20V | - | 160W (Tc) | 3.9 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 250V 4.4A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,280 |
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MOSFET (Metal Oxide) | 250V | 4.4A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | ±20V | - | 3.1W (Ta), 50W (Tc) | 1.1 Ohm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 500V 7A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 630 mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock780,000 |
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MOSFET (Metal Oxide) | 500V | 7A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 450pF @ 50V | ±25V | - | 70W (Tc) | 630 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 800V 14A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 700 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock5,264 |
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MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 4.5V @ 4mA | 200nC @ 10V | 4870pF @ 25V | ±20V | - | 300W (Tc) | 700 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 60V 36A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock6,400 |
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MOSFET (Metal Oxide) | 60V | 36A (Ta), 235A (Tc) | 4.5V, 10V | 2V @ 250µA | 91nC @ 10V | 6660pF @ 25V | ±20V | - | 3.8W (Ta), 167W (Tc) | 1.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 135µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock5,648 |
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MOSFET (Metal Oxide) | 60V | 28A (Ta), 150A (Tc) | 4.5V, 10V | 2V @ 135µA | 52nC @ 10V | 3600pF @ 25V | ±20V | - | 3.7W (Ta), 110W (Tc) | 2.4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Diodes Incorporated |
MOSFET N-CH 60V 0.38A SOT323
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 310mW (Ta)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock7,968 |
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MOSFET (Metal Oxide) | 60V | 380mA (Ta) | 5V, 10V | 2.5V @ 1mA | 0.3nC @ 4.5V | 30pF @ 25V | ±20V | - | 310mW (Ta) | 2 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 35V 15A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 35V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 55W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252AA)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock16,872 |
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MOSFET (Metal Oxide) | 35V | 15A (Ta), 59A (Tc) | 4.5V, 10V | 3V @ 250µA | 36nC @ 10V | 1400pF @ 20V | ±20V | - | 3.8W (Ta), 55W (Tc) | 10 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia USA Inc. |
MOSFET N-CH 25V 100A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2083pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 92W (Tc)
- Rds On (Max) @ Id, Vgs: 3.15 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock45,144 |
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MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 33nC @ 10V | 2083pF @ 12V | ±20V | - | 92W (Tc) | 3.15 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Diodes Incorporated |
MOSFET P-CH 12V 3.3A U-WLB1010-4
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
- Vgs(th) (Max) @ Id: 650mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 6V
- Vgs (Max): -6V
- FET Feature: -
- Power Dissipation (Max): 820mW (Ta)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 500mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-WLB1010-4
- Package / Case: 4-UFBGA, WLBGA
|
Package: 4-UFBGA, WLBGA |
Stock29,466 |
|
MOSFET (Metal Oxide) | 12V | 3A (Ta), 3.3A (Ta) | 0.9V, 4.5V | 650mV @ 250µA | 5nC @ 4.5V | 350pF @ 6V | -6V | - | 820mW (Ta) | 80 mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-WLB1010-4 | 4-UFBGA, WLBGA |
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Vishay Siliconix |
MOSFET N-CH 600V 15A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock3,360 |
|
MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 4V @ 250µA | 78nC @ 10V | 1350pF @ 100V | ±30V | - | 180W (Tc) | 280 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Goford Semiconductor |
P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 16 V
- Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Tc)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-DFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
|
Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 16 V | 5.8A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 7.8 nC @ 4.5 V | 740 pF @ 4 V | ±8V | - | 1.7W (Tc) | 45mOhm @ 4.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN (2x2) | 6-WDFN Exposed Pad |
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Rohm Semiconductor |
NCH 100V 60A, HSOP8, POWER MOSFE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 73W (Tc)
- Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
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Package: - |
Stock6,705 |
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MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 6V, 10V | 4V @ 1mA | 25 nC @ 10 V | 1560 pF @ 50 V | ±20V | - | 3W (Ta), 73W (Tc) | 10.6mOhm @ 60A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
- Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 14.6A (Ta), 52.4A (Tc) | 10V | 4V @ 250µA | 12.1 nC @ 10 V | 897 pF @ 20 V | ±20V | - | 2.82W (Ta), 36.6W (Tc) | 8.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
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Infineon Technologies |
TRENCH 40<-<100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 182A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 139µA
- Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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Package: - |
Stock879 |
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MOSFET (Metal Oxide) | 80 V | 28A (Ta), 182A (Tc) | 6V, 10V | 3.8V @ 139µA | 133 nC @ 10 V | 6200 pF @ 40 V | ±20V | - | 3.8W (Ta), 214W (Tc) | 2.4mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 25A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 3.5V @ 1.1mA | 70 nC @ 10 V | 2500 pF @ 100 V | ±20V | - | 208W (Tc) | 125mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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MOSLEADER |
Single N 25V 2.7A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Diodes Incorporated |
MOSFET N-CH 40V 11.6A 6UDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 990mW (Ta)
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
- Package / Case: 6-UDFN Exposed Pad
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Package: - |
Stock26,784 |
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MOSFET (Metal Oxide) | 40 V | 11.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 14.2 nC @ 10 V | 1030 pF @ 20 V | ±20V | - | 990mW (Ta) | 11.5mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | U-DFN2020-6 (SWP) (Type F) | 6-UDFN Exposed Pad |
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SemiQ |
SIC 1200V 80M MOSFET & 10A SBD S
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 1374 pF @ 1000 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 142W (Tc)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
Stock174 |
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SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 20V | 4V @ 10mA | 58 nC @ 20 V | 1374 pF @ 1000 V | +25V, -10V | - | 142W (Tc) | 100mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Goford Semiconductor |
P-80V,RD(MAX)<62M@-10V,RD(MAX)<7
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 62mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock216 |
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MOSFET (Metal Oxide) | 80 V | 20A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 48 nC @ 10 V | 3500 pF @ 30 V | ±20V | - | 60W (Tc) | 62mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 6A/18A 6DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
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Package: - |
Stock24,615 |
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MOSFET (Metal Oxide) | 40 V | 6A (Ta), 18A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 12 nC @ 10 V | 440 pF @ 20 V | ±20V | - | 2W (Ta), 19W (Tc) | 30mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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MOSLEADER |
Single P -20V 4.5A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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