Page 939 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI028N08N3GHKSA1
Infineon Technologies

MOSFET N-CH 80V 100A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,216
AOTF450L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 200V 5.8A TO220F

Package: TO-220-3 Full Pack

Stock24,444
CPH3448-TL-H
ON Semiconductor

MOSFET N-CH 30V 4A CPH3

Package: SC-96

Stock120,012
BS170_J35Z
Fairchild/ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock5,088
HUFA75337S3S
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,920
IRFU220_R4941
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4.6A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,096
IRFR9210TRR
Vishay Siliconix

MOSFET P-CH 200V 1.9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,920
IPP048N04NGXKSA1
Infineon Technologies

MOSFET N-CH 40V 70A TO220-3

Package: TO-220-3

Stock6,976
IPC100N04S5L2R6ATMA1
Infineon Technologies

MOSFET N-CH 40V 100A 8TDSON

Package: 8-PowerTDFN

Stock7,984
AOT7N70
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 7A TO220

Package: TO-220-3

Stock181,008
NTK3043NT5G
ON Semiconductor

MOSFET N-CH 20V 210MA SOT-723

Package: SOT-723

Stock246,600
SI7116DN-T1-E3
Vishay Siliconix

MOSFET N-CH 40V 10.5A 1212-8

Package: PowerPAK? 1212-8

Stock343,512
BSC040N08NS5ATMA1
Infineon Technologies

MOSFET N-CH 80V 100A 8TDSON

Package: 8-PowerTDFN

Stock4,640
IRFI9630GPBF
Vishay Siliconix

MOSFET P-CH 200V 4.3A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock855,180
DMT6009LK3-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,192
FQD13N10TM
Fairchild/ON Semiconductor

MOSFET N-CH 100V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock588,996
TK8P60W5,RVQ
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock17,526
SIE808DF-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 60A 10-POLARPAK

Package: 10-PolarPAK? (L)

Stock5,856
STP30N65M5
STMicroelectronics

MOSFET N-CH 650V 22A TO220

Package: TO-220-3

Stock37,242
ZVP2110GTA
Diodes Incorporated

MOSFET P-CH 100V 0.31A SOT223

Package: TO-261-4, TO-261AA

Stock81,216

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI028N08N3GHKSA1	Infineon Technologies	MOSFET N-CH 80V 100A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,216	MOSFET (Metal Oxide)	80V	100A (Tc)	6V, 10V	3.5V @ 270µA	206nC @ 10V	14200pF @ 40V	±20V	-	300W (Tc)	2.8 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
AOTF450L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 200V 5.8A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock24,444	MOSFET (Metal Oxide)	200V	5.8A (Tc)	10V	4.5V @ 250µA	4.4nC @ 10V	235pF @ 25V	±30V	-	27W (Tc)	700 mOhm @ 2.9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
CPH3448-TL-H	ON Semiconductor	MOSFET N-CH 30V 4A CPH3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: SC-96	Package: SC-96	Stock120,012	MOSFET (Metal Oxide)	30V	4A (Ta)	1.8V, 4.5V	-	4.7nC @ 4.5V	430pF @ 10V	±12V	-	1W (Ta)	50 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	3-CPH	SC-96
BS170_J35Z	Fairchild/ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock5,088	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	40pF @ 10V	±20V	-	830mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
HUFA75337S3S	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1775pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 175W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,920	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	109nC @ 20V	1775pF @ 25V	±20V	-	175W (Tc)	14 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFU220_R4941	Fairchild/ON Semiconductor	MOSFET N-CH 200V 4.6A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,096	MOSFET (Metal Oxide)	200V	4.6A (Tc)	10V	4V @ 250µA	18nC @ 10V	330pF @ 25V	±20V	-	50W (Tc)	800 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IRFR9210TRR	Vishay Siliconix	MOSFET P-CH 200V 1.9A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,920	MOSFET (Metal Oxide)	200V	1.9A (Tc)	10V	4V @ 250µA	8.9nC @ 10V	170pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	3 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPP048N04NGXKSA1	Infineon Technologies	MOSFET N-CH 40V 70A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,976	MOSFET (Metal Oxide)	40V	70A (Tc)	10V	4V @ 200µA	41nC @ 10V	3300pF @ 25V	±20V	-	79W (Tc)	4.8 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPC100N04S5L2R6ATMA1	Infineon Technologies	MOSFET N-CH 40V 100A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2925pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,984	MOSFET (Metal Oxide)	40V	100A (Tc)	4.5V, 10V	2V @ 30µA	55nC @ 10V	2925pF @ 25V	±16V	-	75W (Tc)	2.6 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-34	8-PowerTDFN
AOT7N70	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 700V 7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 198W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock181,008	MOSFET (Metal Oxide)	700V	7A (Tc)	10V	4.5V @ 250µA	25nC @ 10V	1175pF @ 25V	±30V	-	198W (Tc)	1.8 Ohm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
NTK3043NT5G	ON Semiconductor	MOSFET N-CH 20V 210MA SOT-723 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.65V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 10mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-723 Package / Case: SOT-723	Package: SOT-723	Stock246,600	MOSFET (Metal Oxide)	20V	210mA (Ta)	1.65V, 4.5V	1.3V @ 250µA	-	11pF @ 10V	±10V	-	310mW (Ta)	3.4 Ohm @ 10mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-723	SOT-723
SI7116DN-T1-E3	Vishay Siliconix	MOSFET N-CH 40V 10.5A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 16.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock343,512	MOSFET (Metal Oxide)	40V	10.5A (Ta)	4.5V, 10V	2.5V @ 250µA	23nC @ 4.5V	-	±20V	-	1.5W (Ta)	7.8 mOhm @ 16.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
BSC040N08NS5ATMA1	Infineon Technologies	MOSFET N-CH 80V 100A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 67µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,640	MOSFET (Metal Oxide)	80V	100A (Tc)	6V, 10V	3.8V @ 67µA	54nC @ 10V	3900pF @ 40V	±20V	-	2.5W (Ta), 104W (Tc)	4 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IRFI9630GPBF	Vishay Siliconix	MOSFET P-CH 200V 4.3A TO220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock855,180	MOSFET (Metal Oxide)	200V	4.3A (Tc)	10V	4V @ 250µA	29nC @ 10V	700pF @ 25V	±20V	-	35W (Tc)	800 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
DMT6009LK3-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 30V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.6W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,192	MOSFET (Metal Oxide)	60V	13.3A (Ta), 57A (Tc)	4.5V, 10V	2V @ 250µA	33.5nC @ 10V	1925pF @ 30V	±16V	-	2.6W (Ta)	10 mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD13N10TM	Fairchild/ON Semiconductor	MOSFET N-CH 100V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock588,996	MOSFET (Metal Oxide)	100V	10A (Tc)	10V	4V @ 250µA	16nC @ 10V	450pF @ 25V	±25V	-	2.5W (Ta), 40W (Tc)	180 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
TK8P60W5,RVQ	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 560 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock17,526	MOSFET (Metal Oxide)	600V	8A (Ta)	10V	4.5V @ 400µA	22nC @ 10V	590pF @ 300V	±30V	-	80W (Tc)	560 mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
SIE808DF-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 60A 10-POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (L) Package / Case: 10-PolarPAK? (L)	Package: 10-PolarPAK? (L)	Stock5,856	MOSFET (Metal Oxide)	20V	60A (Tc)	4.5V, 10V	3V @ 250µA	155nC @ 10V	8800pF @ 10V	±20V	-	5.2W (Ta), 125W (Tc)	1.6 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (L)	10-PolarPAK? (L)
STP30N65M5	STMicroelectronics	MOSFET N-CH 650V 22A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 139 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock37,242	MOSFET (Metal Oxide)	650V	22A (Tc)	10V	5V @ 250µA	64nC @ 10V	2880pF @ 100V	±25V	-	140W (Tc)	139 mOhm @ 11A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
ZVP2110GTA	Diodes Incorporated	MOSFET P-CH 100V 0.31A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 375mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock81,216	MOSFET (Metal Oxide)	100V	310mA (Ta)	10V	3.5V @ 1mA	-	100pF @ 25V	±20V	-	2W (Ta)	8 Ohm @ 375mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
SI2308BDS-T1-E3	Vishay Siliconix	MOSFET N-CH 60V 2.3A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc) Rds On (Max) @ Id, Vgs: 156 mOhm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock936,156	MOSFET (Metal Oxide)	60V	2.3A (Tc)	4.5V, 10V	3V @ 250µA	6.8nC @ 10V	190pF @ 30V	±20V	-	1.09W (Ta), 1.66W (Tc)	156 mOhm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
2SK3541T2L	Rohm Semiconductor	MOSFET N-CH 30V .1A VMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	Package: SOT-723	Stock4,569,240	MOSFET (Metal Oxide)	30V	100mA (Ta)	2.5V, 4V	1.5V @ 100µA	-	13pF @ 5V	±20V	-	150mW (Ta)	8 Ohm @ 10mA, 4V	150°C (TJ)	Surface Mount	VMT3	SOT-723
SQS407ENW-T1_GE3	Vishay Siliconix	MOSFET P-CH 30V 16A PPAK1212-8W FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4572 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8W Package / Case: PowerPAK® 1212-8W	Package: -	Stock86,949	MOSFET (Metal Oxide)	30 V	16A (Tc)	4.5V, 10V	2.5V @ 250µA	77 nC @ 10 V	4572 pF @ 20 V	±20V	-	62.5W (Tc)	10.8mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 1212-8W	PowerPAK® 1212-8W
APT40M70LVRG	Microchip Technology	MOSFET N-CH 400V 57A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 495 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8890 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 28.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (L) Package / Case: TO-264-3, TO-264AA	Package: -	Stock42	MOSFET (Metal Oxide)	400 V	57A (Tc)	10V	4V @ 2.5mA	495 nC @ 10 V	8890 pF @ 25 V	±30V	-	520W (Tc)	70mOhm @ 28.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (L)	TO-264-3, TO-264AA
R6024ENZ4C13	Rohm Semiconductor	MOSFET N-CH 600V 24A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 24A, 15V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock1,800	MOSFET (Metal Oxide)	600 V	24A (Tc)	10V, 15V	-	70 nC @ 15 V	-	±20V	-	245W (Tc)	165mOhm @ 24A, 15V	-	Through Hole	TO-247	TO-247-3
TPIC1501ADWR	Texas Instruments	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AO3404	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 5A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: 3-SMD, SOT-23-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	5A (Ta)	4.5V, 10V	2.4V @ 250µA	6.3 nC @ 10 V	310 pF @ 15 V	±20V	-	1.4W (Ta)	31mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	3-SMD, SOT-23-3 Variant
IQDH29NE2LM5CGATMA1	Infineon Technologies	OPTIMOS 6 POWER-TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1.448mA Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TTFN-9-U02 Package / Case: 9-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	25 V	75A (Ta), 789A (Tc)	4.5V, 10V	2V @ 1.448mA	254 nC @ 10 V	17000 pF @ 12 V	±16V	-	2.5W (Ta), 278W (Tc)	0.29mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TTFN-9-U02	9-PowerTDFN