Page 948 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BTS247ZAKSA1
Infineon Technologies

MOSFET N-CH 55V 33A TO220-5

Package: TO-220-5 Formed Leads

Stock5,216
STD3155L104T4G
ON Semiconductor

MOSFET N-CH 60V DPAK

Package: -

Stock2,336
SIA419DJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 12A SC70-6

Package: PowerPAK? SC-70-6

Stock108,000
FQP32N12V2
Fairchild/ON Semiconductor

MOSFET N-CH 120V 32A TO-220

Package: TO-220-3

Stock5,840
FQD2N60TM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,384
STP5NK65Z
STMicroelectronics

MOSFET N-CH 650V 5A TO-220FP

Package: TO-220-3

Stock7,552
IRFR4615PBF
Infineon Technologies

MOSFET N-CH 150V 33A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,640
IXFN20N120P
IXYS

MOSFET N-CH 1200V 20A SOT-227B

Package: SOT-227-4, miniBLOC

Stock5,056
TK40E10K3,S1X(S
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 40A TO-220AB

Package: TO-220-3

Stock5,248
STB55NF06T4
STMicroelectronics

MOSFET N-CH 60V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock18,864
TK34A10N1,S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 34A TO-220

Package: TO-220-3 Full Pack, Isolated Tab

Stock5,472
FDP8447L
Fairchild/ON Semiconductor

MOSFET N-CH 40V 12A TO-220

Package: TO-220-3

Stock510,972
DMN3024LSS-13
Diodes Incorporated

MOSFET N-CH 30V 6.4A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock149,232
CDM22012-800LRFP SL
Central Semiconductor Corp

MOSFET N-CH 800V 12A

Package: TO-220-3 Full Pack

Stock9,012
SPU07N60C3
Infineon Technologies

MOSFET N-CH 650V 7.3A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,152
FDPF390N15A
Fairchild/ON Semiconductor

MOSFET N-CH 150V 15A TO-220F

Package: TO-220-3 Full Pack

Stock390,000
SIA467EDJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 31A SC70-6

Package: PowerPAK? SC-70-6

Stock22,356
SI4421DY-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 10A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock568,164
BSS138WQ-13-F
Diodes Incorporated

BSS FAMILY SOT323 T&R 10K

Package: -

Request a Quote
UJ4C075023L8SSB
Qorvo

750V/23MO,SICFET,G4,TOLL

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BTS247ZAKSA1	Infineon Technologies	MOSFET N-CH 55V 33A TO220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V Vgs (Max): ±20V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 12A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-5-3 Package / Case: TO-220-5 Formed Leads	Package: TO-220-5 Formed Leads	Stock5,216	MOSFET (Metal Oxide)	55V	33A (Tc)	4.5V, 10V	2V @ 90µA	90nC @ 10V	1730pF @ 25V	±20V	Temperature Sensing Diode	120W (Tc)	18 mOhm @ 12A, 10V	-40°C ~ 175°C (TJ)	Through Hole	PG-TO220-5-3	TO-220-5 Formed Leads
STD3155L104T4G	ON Semiconductor	MOSFET N-CH 60V DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,336	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIA419DJ-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 12A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	Package: PowerPAK? SC-70-6	Stock108,000	MOSFET (Metal Oxide)	20V	12A (Tc)	1.2V, 4.5V	850mV @ 250µA	29nC @ 5V	1500pF @ 10V	±5V	-	3.5W (Ta), 19W (Tc)	30 mOhm @ 5.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Single	PowerPAK? SC-70-6
FQP32N12V2	Fairchild/ON Semiconductor	MOSFET N-CH 120V 32A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,840	MOSFET (Metal Oxide)	120V	32A (Tc)	10V	4V @ 250µA	53nC @ 10V	1860pF @ 25V	±30V	-	150W (Tc)	50 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQD2N60TM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,384	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	5V @ 250µA	11nC @ 10V	350pF @ 25V	±30V	-	2.5W (Ta), 45W (Tc)	4.7 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STP5NK65Z	STMicroelectronics	MOSFET N-CH 650V 5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,552	MOSFET (Metal Oxide)	650V	5A (Tc)	10V	4.5V @ 50µA	35nC @ 10V	680pF @ 25V	±30V	-	85W (Tc)	1.8 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IRFR4615PBF	Infineon Technologies	MOSFET N-CH 150V 33A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,640	MOSFET (Metal Oxide)	150V	33A (Tc)	10V	5V @ 100µA	26nC @ 10V	1750pF @ 50V	±20V	-	144W (Tc)	42 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFN20N120P	IXYS	MOSFET N-CH 1200V 20A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 20A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,056	MOSFET (Metal Oxide)	1200V	20A	10V	6.5V @ 1mA	193nC @ 10V	11100pF @ 25V	±30V	-	595W (Tc)	570 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
TK40E10K3,S1X(S	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 40A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,248	MOSFET (Metal Oxide)	100V	40A (Ta)	-	4V @ 1mA	84nC @ 10V	4000pF @ 10V	-	-	-	15 mOhm @ 20A, 10V	-	Through Hole	TO-220-3	TO-220-3
STB55NF06T4	STMicroelectronics	MOSFET N-CH 60V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 27.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,864	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 250µA	60nC @ 10V	1300pF @ 25V	±20V	-	110W (Tc)	18 mOhm @ 27.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TK34A10N1,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 34A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 17A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock5,472	MOSFET (Metal Oxide)	100V	34A (Tc)	10V	4V @ 500µA	38nC @ 10V	2600pF @ 50V	±20V	-	35W (Tc)	9.5 mOhm @ 17A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack, Isolated Tab
FDP8447L	Fairchild/ON Semiconductor	MOSFET N-CH 40V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock510,972	MOSFET (Metal Oxide)	40V	12A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	49nC @ 10V	2500pF @ 20V	±20V	-	2W (Ta), 60W (Tc)	8.7 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
DMN3024LSS-13	Diodes Incorporated	MOSFET N-CH 30V 6.4A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock149,232	MOSFET (Metal Oxide)	30V	6.4A (Ta)	4.5V, 10V	3V @ 250µA	12.9nC @ 10V	608pF @ 15V	±20V	-	1.6W (Ta)	24 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
CDM22012-800LRFP SL	Central Semiconductor Corp	MOSFET N-CH 800V 12A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 100V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock9,012	MOSFET (Metal Oxide)	800V	12A (Ta)	10V	4V @ 250µA	52.4nC @ 10V	1090pF @ 100V	30V	-	40W (Tc)	450 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
SPU07N60C3	Infineon Technologies	MOSFET N-CH 650V 7.3A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,152	MOSFET (Metal Oxide)	650V	7.3A (Tc)	10V	3.9V @ 350µA	27nC @ 10V	790pF @ 25V	±20V	-	83W (Tc)	600 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
FDPF390N15A	Fairchild/ON Semiconductor	MOSFET N-CH 150V 15A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 22W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock390,000	MOSFET (Metal Oxide)	150V	15A (Tc)	10V	4V @ 250µA	18.6nC @ 10V	1285pF @ 75V	±20V	-	22W (Tc)	40 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
SIA467EDJ-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 31A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 5A, 4.5V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	Package: PowerPAK? SC-70-6	Stock22,356	MOSFET (Metal Oxide)	12V	31A (Tc)	1.8V, 4.5V	1V @ 250µA	72nC @ 8V	2520pF @ 6V	±8V	-	3.5W (Ta), 19W (Tc)	13 mOhm @ 5A, 4.5V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Single	PowerPAK? SC-70-6
SI4421DY-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 10A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 850µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 8.75 mOhm @ 14A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock568,164	MOSFET (Metal Oxide)	20V	10A (Ta)	1.8V, 4.5V	800mV @ 850µA	125nC @ 4.5V	-	±8V	-	1.5W (Ta)	8.75 mOhm @ 14A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSS138WQ-13-F	Diodes Incorporated	BSS FAMILY SOT323 T&R 10K FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	280mA (Ta)	10V	1.5V @ 250µA	1.5 nC @ 10 V	48 pF @ 25 V	±20V	-	400mW (Ta)	3.5Ohm @ 220mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
UJ4C075023L8SSB	Qorvo	750V/23MO,SICFET,G4,TOLL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
XP6NA1R4CXT	YAGEO XSEMI	FET N-CH 60V 44.6A 100A PMPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 44.6A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11520 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 113.6W (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PMPAK® 5 x 6 Package / Case: 8-PowerLDFN	Package: -	Stock3,000	MOSFET (Metal Oxide)	60 V	44.6A (Ta), 100A (Tc)	6V, 10V	4V @ 250µA	195 nC @ 10 V	11520 pF @ 50 V	±20V	-	5W (Ta), 113.6W (Tc)	1.45mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PMPAK® 5 x 6	8-PowerLDFN
DMP26M1UFG-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V POWERDI3333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.67W (Ta), 3W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	71A (Tc)	1.5V, 4.5V	1V @ 250µA	164 nC @ 10 V	5392 pF @ 10 V	±10V	-	1.67W (Ta), 3W (Tc)	5.5mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
IPA70R900P7SXKSA1	Infineon Technologies	MOSFET N-CH 700V 6A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 20.5W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: -	Stock714	MOSFET (Metal Oxide)	700 V	6A (Tc)	10V	3.5V @ 60µA	6.8 nC @ 400 V	211 pF @ 400 V	±16V	-	20.5W (Tc)	900mOhm @ 1.1A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
AO3434TS	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 3.5A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: 3-SMD, SOT-23-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	3.5A (Ta)	4.5V, 10V	1.8V @ 250µA	7.2 nC @ 10 V	340 pF @ 15 V	±20V	-	1W (Ta)	52mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	3-SMD, SOT-23-3 Variant
2SK1839-TL-E	onsemi	NCH 0.1A 30V MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STF18N60M6	STMicroelectronics	MOSFET N-CH 600V 13A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Stock87	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	4.75V @ 250µA	16.8 nC @ 10 V	650 pF @ 100 V	±25V	-	25W (Tc)	280mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
2N7002KS-TP	Micro Commercial Co	Interface FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 340mA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW Rds On (Max) @ Id, Vgs: 2.2Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	340mA	4.5V, 10V	2.5V @ 250µA	1.7 nC @ 10 V	27 pF @ 30 V	±20V	-	350mW	2.2Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
RJK2017DPP-B1-T2F	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-