Page 951 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSS119 E7796
Infineon Technologies

MOSFET N-CH 100V 170MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock4,448
IRF7422D2PBF
Infineon Technologies

MOSFET P-CH 20V 4.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock22,764
IRFPS3810
Infineon Technologies

MOSFET N-CH 100V 170A SUPER247

Package: TO-274AA

Stock103,464
IRL2910STRL
Infineon Technologies

MOSFET N-CH 100V 55A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,360
JANTX2N6770T1
Microsemi Corporation

MOSFET N-CH TO-254AA

Package: TO-254-3, TO-254AA (Straight Leads)

Stock6,176
PHD18NQ10T,118
NXP

MOSFET N-CH 100V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,904
2SK3309(TE24L,Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 450V 10A TO220SM

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,240
2N7002T,215
NXP

MOSFET N-CH 60V 300MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock5,472
VN0300L
ON Semiconductor

MOSFET N-CH 60V 200MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock42,036
IXFA230N075T2-7
IXYS

MOSFET N-CH 75V 230A TO-263-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock2,560
IXFQ24N50P2
IXYS

500V POLAR2 HIPERFETS

Package: TO-3P-3, SC-65-3

Stock5,040
ZVP0545GTA
Diodes Incorporated

MOSFET P-CH 450V 0.075A SOT223

Package: TO-261-4, TO-261AA

Stock93,888
APT24M120L
Microsemi Corporation

MOSFET N-CH 1200V 24A TO-264

Package: TO-264-3, TO-264AA

Stock5,392
IPW60R037P7XKSA1
Infineon Technologies

MOSFET N-CH 650V 76A TO247-3

Package: TO-247-3

Stock9,336
DMTH6016LPSQ-13
Diodes Incorporated

MOSFET N-CHA 60V 10.6A POWERDI

Package: 8-PowerTDFN

Stock6,368
SIHF35N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 32A TO220

Package: TO-220-3 Full Pack

Stock14,094
IXTN170P10P
IXYS

MOSFET P-CH 100V 170A SOT227

Package: SOT-227-4, miniBLOC

Stock6,180
FDPF44N25T
Fairchild/ON Semiconductor

MOSFET N-CH 250V 44A TO-220F

Package: TO-220-3 Full Pack

Stock486,540
BSZ037N06LS5ATMA1
Infineon Technologies

MOSFET N-CH 60V 18A/40A TSDSON

Package: -

Stock29,535
NVMFS4C310NWFT1G
onsemi

MOSFET N-CH 30V TRENCH

Package: -

Stock4,500

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSS119 E7796	Infineon Technologies	MOSFET N-CH 100V 170MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,448	MOSFET (Metal Oxide)	100V	170mA (Ta)	4.5V, 10V	2.3V @ 50µA	2.5nC @ 10V	78pF @ 25V	±20V	-	360mW (Ta)	6 Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
IRF7422D2PBF	Infineon Technologies	MOSFET P-CH 20V 4.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock22,764	MOSFET (Metal Oxide)	20V	4.3A (Ta)	2.7V, 4.5V	700mV @ 250µA	22nC @ 4.5V	610pF @ 15V	±12V	Schottky Diode (Isolated)	2W (Ta)	90 mOhm @ 2.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFPS3810	Infineon Technologies	MOSFET N-CH 100V 170A SUPER247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6790pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 580W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-247 (TO-274AA) Package / Case: TO-274AA	Package: TO-274AA	Stock103,464	MOSFET (Metal Oxide)	100V	170A (Tc)	10V	5V @ 250µA	390nC @ 10V	6790pF @ 25V	±30V	-	580W (Tc)	9 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	SUPER-247 (TO-274AA)	TO-274AA
IRL2910STRL	Infineon Technologies	MOSFET N-CH 100V 55A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,360	MOSFET (Metal Oxide)	100V	55A (Tc)	4V, 10V	2V @ 250µA	140nC @ 5V	3700pF @ 25V	±16V	-	3.8W (Ta), 200W (Tc)	26 mOhm @ 29A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
JANTX2N6770T1	Microsemi Corporation	MOSFET N-CH TO-254AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock6,176	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	120nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	500 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
PHD18NQ10T,118	NXP	MOSFET N-CH 100V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,904	MOSFET (Metal Oxide)	100V	18A (Tc)	10V	4V @ 1mA	21nC @ 10V	633pF @ 25V	±20V	-	79W (Tc)	90 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3309(TE24L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 10A TO220SM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220SM Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,240	MOSFET (Metal Oxide)	450V	10A (Ta)	10V	5V @ 1mA	23nC @ 10V	920pF @ 10V	±30V	-	65W (Tc)	650 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	TO-220SM	TO-252-3, DPak (2 Leads + Tab), SC-63
2N7002T,215	NXP	MOSFET N-CH 60V 300MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,472	MOSFET (Metal Oxide)	60V	300mA (Ta)	5V, 10V	2.5V @ 1mA	-	40pF @ 10V	±20V	-	830mW (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
VN0300L	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock42,036	MOSFET (Metal Oxide)	60V	200mA (Ta)	5V, 10V	2.5V @ 1mA	-	100pF @ 15V	±20V	-	350mW (Tc)	1.2 Ohm @ 1A, 10V	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
IXFA230N075T2-7	IXYS	MOSFET N-CH 75V 230A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock2,560	MOSFET (Metal Oxide)	75V	230A (Tc)	10V	4V @ 1mA	178nC @ 10V	10500pF @ 25V	-	-	480W (Tc)	4.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7 (IXTA..7)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXFQ24N50P2	IXYS	500V POLAR2 HIPERFETS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,040	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	4.5V @ 1mA	48nC @ 10V	2890pF @ 25V	±30V	-	480W (Tc)	270 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
ZVP0545GTA	Diodes Incorporated	MOSFET P-CH 450V 0.075A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 75mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 150 Ohm @ 50mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock93,888	MOSFET (Metal Oxide)	450V	75mA (Ta)	10V	4.5V @ 1mA	-	120pF @ 25V	±20V	-	2W (Ta)	150 Ohm @ 50mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
APT24M120L	Microsemi Corporation	MOSFET N-CH 1200V 24A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 680 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock5,392	MOSFET (Metal Oxide)	1200V	24A (Tc)	10V	5V @ 2.5mA	260nC @ 10V	8370pF @ 25V	±30V	-	1040W (Tc)	680 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
IPW60R037P7XKSA1	Infineon Technologies	MOSFET N-CH 650V 76A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.48mA Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5243pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 29.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock9,336	MOSFET (Metal Oxide)	650V	76A (Tc)	10V	4V @ 1.48mA	121nC @ 10V	5243pF @ 400V	±20V	-	255W (Tc)	37 mOhm @ 29.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
DMTH6016LPSQ-13	Diodes Incorporated	MOSFET N-CHA 60V 10.6A POWERDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.6W (Ta), 37.5W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,368	MOSFET (Metal Oxide)	60V	9.8A (Ta), 37A (Tc)	4.5V, 10V	2.5V @ 250µA	17nC @ 10V	864pF @ 30V	±20V	-	2.6W (Ta), 37.5W (Tc)	16 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
SIHF35N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 32A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 94 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock14,094	MOSFET (Metal Oxide)	600V	32A (Tc)	10V	4V @ 250µA	132nC @ 10V	2760pF @ 100V	±30V	-	39W (Tc)	94 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
IXTN170P10P	IXYS	MOSFET P-CH 100V 170A SOT227 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,180	MOSFET (Metal Oxide)	100V	170A	10V	4V @ 1mA	240nC @ 10V	12600pF @ 25V	±20V	-	890W (Tc)	12 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
FDPF44N25T	Fairchild/ON Semiconductor	MOSFET N-CH 250V 44A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 69 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock486,540	MOSFET (Metal Oxide)	250V	44A (Tc)	10V	5V @ 250µA	61nC @ 10V	2870pF @ 25V	±30V	-	38W (Tc)	69 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
BSZ037N06LS5ATMA1	Infineon Technologies	MOSFET N-CH 60V 18A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Package: -	Stock29,535	MOSFET (Metal Oxide)	60 V	18A (Ta), 40A (Tc)	4.5V, 10V	2.3V @ 36µA	47 nC @ 10 V	3100 pF @ 30 V	±20V	-	2.1W (Ta), 69W (Tc)	3.7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
NVMFS4C310NWFT1G	onsemi	MOSFET N-CH 30V TRENCH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,500	-	-	17A (Ta), 51A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
PMN230ENEX	Nexperia USA Inc.	MOSFET N-CH 60V 1.6A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 475mW (Ta), 3.9W (Tc) Rds On (Max) @ Id, Vgs: 222mOhm @ 1.6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	1.6A (Ta)	4.5V, 10V	2.7V @ 250µA	5 nC @ 10 V	177 pF @ 30 V	±20V	-	475mW (Ta), 3.9W (Tc)	222mOhm @ 1.6A, 10V	150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
HUF76633S3ST-F085	onsemi	MOSFET N-CH 100V 39A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 183W (Tj) Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	39A (Tc)	4.5V, 10V	3V @ 250µA	63 nC @ 10 V	1810 pF @ 25 V	±16V	-	183W (Tj)	35mOhm @ 39A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SI1079X-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 1.44A SC89-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 1.44A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 1.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666	Package: -	Stock17,970	MOSFET (Metal Oxide)	30 V	1.44A (Ta)	2.5V, 4.5V	1.5V @ 250µA	26 nC @ 10 V	750 pF @ 15 V	±12V	-	330mW (Ta)	100mOhm @ 1.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-6	SOT-563, SOT-666
SIR182LDP-T1-RE3	Vishay Siliconix	N-CHANNEL 60-V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 31.7A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock23,343	MOSFET (Metal Oxide)	60 V	31.7A (Ta), 130A (Tc)	4.5V, 10V	2.4V @ 250µA	84 nC @ 10 V	3700 pF @ 30 V	±20V	-	5W (Ta), 83W (Tc)	2.75mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
G50N03J	Goford Semiconductor	N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Stub Leads, IPAK	Package: -	Stock10,683	MOSFET (Metal Oxide)	30 V	65A (Tc)	4.5V, 10V	2.5V @ 250µA	16.6 nC @ 10 V	1255 pF @ 15 V	±20V	-	48W (Tc)	7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3 Stub Leads, IPAK
2SK3570-ZK-E1-AZ	Renesas Electronics Corporation	POWER FIELD-EFFECT TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFBG30PBF-BE3	Vishay Siliconix	MOSFET N-CH 1000V 3.1A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock4,149	MOSFET (Metal Oxide)	1000 V	3.1A (Tc)	10V	4V @ 250µA	80 nC @ 10 V	980 pF @ 25 V	±20V	-	125W (Tc)	5Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
TP65H070G4RS-TR	Transphorm	650 V 29 A GAN FET FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TOLT Package / Case: 16-PowerSOP Module	Package: -	Request a Quote	GaNFET (Gallium Nitride)	650 V	29A (Tc)	10V	4.8V @ 700µA	9 nC @ 10 V	638 pF @ 400 V	±20V	-	96W (Tc)	85mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TOLT	16-PowerSOP Module